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1. 发明授权

US11459656B1 Method and precursors for producing oxostannate rich films 有权
公开(公告)号：US11459656B1
公开(公告)日：2022-10-04
申请号：US17512944
申请日：2021-10-28
申请人： Gelest, Inc.
发明人： Barry C. Arkles , Youlin Pan , Jonathan D. Goff , Li Yang
IPC分类号： C23C16/455 , G03F7/11 , C23C16/56 , G03F7/004 , G03F7/16 , G03F7/20
摘要： A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2: (RfCH2)nSnX(4-n) (I).

2. 发明申请

US20220098732A1 Silicon Carbide Thin Films and Vapor Deposition Methods Thereof 有权
公开(公告)号：US20220098732A1
公开(公告)日：2022-03-31
申请号：US17486286
申请日：2021-09-27
申请人： Gelest, Inc.
发明人： Barry C. ARKLES , Alain E. KALOYEROS
IPC分类号： C23C16/455 , C23C16/02 , C23C16/32
摘要： A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.

3. 发明申请

US20020119327A1 Silicon based films formed from iodosilane precursors and method of making the same 有权
标题翻译：由碘硅烷前体形成的硅基薄膜及其制备方法
公开(公告)号：US20020119327A1
公开(公告)日：2002-08-29
申请号：US10079746
申请日：2002-02-19
申请人： Gelest, Inc.
发明人： Barry C. Arkles , Alain E. Kaloyeros
IPC分类号： B05D001/36 , C23C016/00 , B32B009/04
CPC分类号： C23C16/401 , C23C16/24 , C23C16/325 , C23C16/345 , C23C16/402 , C23C16/42 , C23C16/482
摘要： A method for near atmospheric pressure chemical vapor deposition of a silicon based film onto a substrate includes introducing into a deposition chamber at about atmospheric pressure: (i) a substrate; (ii) an iodosilane precursor in the vapor state having at least three iodine atoms bound to silicon; and (iii) at least one reactant gas; and maintaining a deposition temperature within the chamber from about 250null C. to about 650null C. for a period of time sufficient to deposit a silicon based film on the substrate. Silicon based films formed by near atmospheric pressure chemical vapor deposition using an iodosilane precursor in a vapor state and methods for forming silicon-based films using ultraviolet assisted chemical vapor deposition are also included.
摘要翻译：将基于硅的膜的近大气压化学气相沉积的方法包括在大气压力下引入沉积室：（i）衬底; （ii）蒸气状态的碘代硅烷前体具有至少三个与硅结合的碘原子; 和（iii）至少一种反应气体; 以及将室内的沉积温度从约250℃至约650℃保持足以在基底上沉积硅基膜的时间。还包括使用在蒸气状态下使用碘代硅烷前体的近大气压化学气相沉积形成的硅基膜以及使用紫外线辅助化学气相沉积形成硅基膜的方法。

4. 发明申请

US20230095666A1 METHOD AND PRECURSORS FOR PRODUCING OXOSTANNATE RICH FILMS 有权
公开(公告)号：US20230095666A1
公开(公告)日：2023-03-30
申请号：US17878292
申请日：2022-08-01
申请人： Gelest, Inc.
发明人： Barry C. ARKLES , Youlin PAN , Jonathan D. GOFF , Li YANG
IPC分类号： C23C16/455 , C23C16/56 , G03F7/16 , G03F7/20 , G03F7/11 , G03F7/004
摘要： A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2: (RfCH2)nSnX(4-n) (I)

5. 发明申请

US20220125704A1 COMPOSITIONS AND METHODS FOR RESHAPING KERATIN-RICH SUBSTRATES AND FORMING ADHERENT FLEXIBLE FILMS 有权
公开(公告)号：US20220125704A1
公开(公告)日：2022-04-28
申请号：US17570437
申请日：2022-01-07
申请人： Gelest, Inc.
发明人： Barry C. ARKLES , Jonathan D. GOFF , Alison Anne PHILLIPS , Kerry Campbell DEMELLA
IPC分类号： A61K8/892 , A61K8/362 , A61K8/41 , A61K8/58 , A61Q5/00 , A61Q5/06
摘要： Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.

6. 发明申请

US20220119940A1 PROCESS FOR THIN FILM DEPOSITION THROUGH CONTROLLED FORMATION OF VAPOR PHASE TRANSIENT SPECIES 有权
公开(公告)号：US20220119940A1
公开(公告)日：2022-04-21
申请号：US17563199
申请日：2021-12-28
申请人： Gelest, Inc.
发明人： Barry C. ARKLES , Alain E. KALOYEROS
IPC分类号： C23C16/24 , C23C16/16 , C23C16/448 , C23C16/452 , C23C16/455 , C30B23/02 , C30B25/02 , C30B29/02 , C30B29/06 , H01L21/285
摘要： A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.

7. 发明申请

US20230098287A1 CHALCOGENOSILACYCLOPENTANES 有权
公开(公告)号：US20230098287A1
公开(公告)日：2023-03-30
申请号：US17985990
申请日：2022-11-14
申请人： Gelest, Inc.
发明人： Barry C. ARKLES , Richard J. LIBERATORE , Youlin PAN
IPC分类号： C07F7/08 , C23C16/455 , C07F7/18
摘要： A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.

8. 发明授权

US11318083B2 Compositions and methods for reshaping keratin-rich substrates and forming adherent flexible films 有权
公开(公告)号：US11318083B2
公开(公告)日：2022-05-03
申请号：US16812700
申请日：2020-03-09
申请人： Gelest, Inc.
发明人： Barry C. Arkles , Jonathan D. Goff , Alison Ane Phillips , Kerry Campbell Demella
IPC分类号： A61K8/892 , A61K8/58 , A61K8/41 , A61K8/362 , A61Q5/00 , A61Q5/06
摘要： Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.

9. 发明申请

US20030198587A1 Method for low-temperature organic chemical vapor deposition of tungsten nitride, tungsten nitride films and tungsten nitride diffusion barriers for computer interconnect metallization 有权
标题翻译：用于计算机互连金属化的氮化钨，氮化钨膜和氮化钨扩散阻挡层的低温有机化学气相沉积方法
公开(公告)号：US20030198587A1
公开(公告)日：2003-10-23
申请号：US10425823
申请日：2003-04-28
申请人： Gelest, Inc. , The Research Foundation of State University of New York
发明人： Alain E. Kaloyeros , Barry C. Arkles
IPC分类号： C23C016/34 , C01B021/06
CPC分类号： C01B21/062 , C01P2002/72 , C01P2002/77 , C01P2004/03 , C01P2004/04 , C01P2006/10 , C01P2006/40 , C23C16/34
摘要： Processes for producing tungsten nitride and tungsten nitride films are provided in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600null C. Tungsten nitride precursors are also included which comprise a tungsten carbonyl compound capable of forming a tungsten nitride film in the presence of a nitrogen-containing reactant gas at a temperature of less than about 600null C. A process for forming a film by atomic layer deposition is also provided which includes introducing into a substrate having a surface into a deposition chamber and heating the substrate to a temperature sufficient to allow adsorption of a tungsten source precursor or an intermediate of a tungsten source precursor, introducing a tungsten source precursor into the deposition chamber by pulsing for a period of time sufficient to form a self-limiting monolayer of the source precursor or an intermediate of the tungsten source precursor intermediate, introducing an inert gas into the deposition chamber by pulsing the inert gas to purge the deposition to remove the tungsten nitride precursor in the gas phase, introducing a nitrogen-containing gas into the deposition chamber by pulsing to react with the adsorbed precursor monolayer on the substrate surface and to form a first tungsten nitride atomic layer on the substrate surface. An inert gas may then introduced into the deposition chamber for a period of time sufficient to remove the unreacted nitrogen-containing gas and reaction byproducts from the deposition chamber. The entire pulsing sequence including precursor, inert gas, nitrogen-containing gas may be repeated until a film with a desired thickness is achieved.
摘要翻译：提供了用于生产氮化钨和氮化钨膜的方法，其中在低于约600℃的温度下使羰基羰基化合物和含氮反应气体反应。还包括含氮化钨前体，其包含能够形成的羰基羰基化合物在低于约600℃的温度下在含氮反应物气体存在下的氮化钨膜。还提供了通过原子层沉积形成膜的方法，其包括将具有表面的基板引入沉积物并且将衬底加热到足以允许钨源前体或钨源前体的吸附的温度，通过脉冲将钨源前体引入沉积室足以形成自限制单层的时间的源前体或钨源前体中间体的中间体通过脉冲惰性气体吹扫沉积物以除去气相中的氮化钨前体而将惰性气体引入沉积室，通过脉冲将含氮气体引入沉积室中以与衬底上的吸附的前体单层反应并在衬底表面上形成第一氮化钨原子层。然后可以将惰性气体引入沉积室中足以从沉积室除去未反应的含氮气体和反应副产物的时间。可以重复包括前体，惰性气体，含氮气体的整个脉冲序列，直到实现具有所需厚度的膜。

10. 发明申请

US20030060636A1 Sulfolane functional silanes, compositions, and methods of use of the same 失效
标题翻译：环丁砜功能硅烷，组合物及其使用方法
公开(公告)号：US20030060636A1
公开(公告)日：2003-03-27
申请号：US10193882
申请日：2002-07-12
申请人： Gelest, Inc.
发明人： Barry C. Arkles , Youlin Pan
IPC分类号： C07F007/02
CPC分类号： C08K5/45 , C07F7/0838 , C07F7/12 , C07F7/1804 , C08K5/548 , C08L21/00
摘要： The invention includes a sulfolane functional silane comprising a sulfolane ring, an alkoxy group, a hydrocarbon backbone, and a silyl moiety. An oxygen atom of the alkoxy group is bound to the sulfolane ring, and the hydrocarbon backbone has one to fifty carbon atoms and is bound by its first terminal carbon atom to a carbon of the alkoxy group and by its second terminal carbon atom to the silicone atom of the silyl moiety. The silyl moiety comprises at least one hydrolyzable group and/or a non-hydrolyzable group that is a substituted or unsubstituted siloxane group. A method to stabilize a silane solution is described and includes adding the sulfolane functional silane of the invention to a solution containing silane hydrosylates.
摘要翻译：本发明包括环丁砜官能的硅烷，其包含环丁砜环，烷氧基，烃骨架和甲硅烷基部分。烷氧基的氧原子与环丁砜环结合，烃骨架具有一至五十个碳原子，并且其第一末端碳原子与烷氧基的碳和其第二末端碳原子与硅氧烷结合甲硅烷基部分的原子。甲硅烷基部分包含至少一个可水解基团和/或作为取代或未取代的硅氧烷基团的不可水解基团。描述了稳定硅烷溶液的方法，包括将本发明的环丁砜官能的硅烷加入到含有硅烷羟烷基化物的溶液中。

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