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1. 发明授权

US07732350B2 Chemical vapor deposition of TiN films in a batch reactor 有权
标题翻译：在间歇式反应器中化学气相沉积TiN膜
公开(公告)号：US07732350B2
公开(公告)日：2010-06-08
申请号：US11634043
申请日：2006-12-04
申请人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
发明人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
IPC分类号： H01L21/469
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译：使用氯化钛（TiCl 4）和氨（NH 3）作为前体在间歇反应器中形成氮化钛（TiN）膜。 TiCl4在时间上分离的脉冲中流入反应器。 NH 3还可以在与TiCl 4脉冲交替的时间间隔的脉冲中流入反应器，或者NH 3可以连续流入反应器中，同时以脉冲引入TiCl 4。所得到的TiN膜具有低电阻率和均匀性。

2. 发明授权

US07410355B2 Method for the heat treatment of substrates 失效
标题翻译：基板热处理方法
公开(公告)号：US07410355B2
公开(公告)日：2008-08-12
申请号：US11356697
申请日：2006-02-17
申请人： Ernst H. A. Granneman , Vladimir I. Kuznetsov , Xavier Pages , Pascal G. Vermont , Herbert Terhorst , Gert-Jan Snijders
发明人： Ernst H. A. Granneman , Vladimir I. Kuznetsov , Xavier Pages , Pascal G. Vermont , Herbert Terhorst , Gert-Jan Snijders
IPC分类号： H01L21/02
CPC分类号： H01L21/324 , H01L21/42 , H01L21/477 , H01L21/67109 , H01L21/67248 , H01L21/67784 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
摘要翻译：衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。通过在反应器的两个加热表面之间流动气体将基板保持悬浮。将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到所需的温度。然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

3. 发明授权

US07253107B2 Pressure control system 有权
标题翻译：压力控制系统
公开(公告)号：US07253107B2
公开(公告)日：2007-08-07
申请号：US10871897
申请日：2004-06-17
申请人： Gert Jan Snijders
发明人： Gert Jan Snijders
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/67253 , C23C16/4412 , G05D16/208 , H01L21/67017
摘要： A pressure control system allows gas to be evacuated out of a semiconductor process chamber at a substantially constant rate of mass flow. A gas line connects the process chamber to a vacuum pump. A controllable valve having a variable sized opening is positioned between the process chamber and the vacuum pump. A pressure sensor is in turn positioned between the valve and the vacuum pump, proximate the inlet to the vacuum pump. The size of the variable sized opening is regulated based upon the pressure in the gas line measured by the pressure sensor. The size of the valve opening is varied to maintain the pressure measured by the pressure sensor at a constant value. As a result, because the quantity of gas flowing through the gas line is proportional to the gas pressure, a substantially constant mass flow of gas out of the chamber and into the pump can be achieved.
摘要翻译：压力控制系统允许气体以基本恒定的质量流量从半导体处理室排出。气体管线将处理室连接到真空泵。具有可变尺寸开口的可控阀位于处理室和真空泵之间。压力传感器又位于阀门和真空泵之间，靠近真空泵的入口。可变尺寸开口的尺寸基于由压力传感器测量的气体管线中的压力来调节。阀开口的尺寸是变化的，以将由压力传感器测量的压力保持在恒定值。结果，由于流过气体管线的气体的量与气体压力成比例，所以可以实现从腔室到泵中的大体上恒定的气体质量流量。

4. 发明申请

US20060105107A1 Reactor design for reduced particulate generation 有权
标题翻译：反应器设计减少颗粒物的产生
公开(公告)号：US20060105107A1
公开(公告)日：2006-05-18
申请号：US11251546
申请日：2005-10-14
申请人： Bartholomeus Lindeboom , Gert-Jan Snijders
发明人： Bartholomeus Lindeboom , Gert-Jan Snijders
IPC分类号： C23C16/00
CPC分类号： C23C16/4404
摘要： Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating the door plate to a temperature high enough to prevent condensation before flowing reactant gases into the process chamber. The door plate can be heated using a heat source, e.g., a resistive heater, that is in direct contact with the door plate or the heat source can heat the door plate from a distance by radiative or inductive heating. In addition, the door plate can open to allow loading and unloading of a wafer load. As it passes flanges near the door plate, the wafer load can transfer heat to those flanges. To prevent overheating, the flange is provided with a coolant-containing channel having walls that are spaced from the flange by O-rings. The spacing of the channel walls to the flange can be varied to vary the amount of thermal contact and cooling achieved using the channels.
摘要翻译：半导体制造处理室中的颗粒形成通过防止密封处理室的门板上的冷凝来减少。当反应物气体冷凝在门板的相对较冷的表面上时，可以在处理室中形成颗粒。通过将门板加热到足够高的温度以防止在使反应气体进入处理室之前发生冷凝，使颗粒形成最小化。可以使用与门板直接接触的热源（例如电阻加热器）来加热门板，或者热源可以通过辐射或感应加热从一定距离加热门板。此外，门板可以打开以允许加载和卸载晶片负载。当它通过门板附近的法兰时，晶片负载可以将热量传递到这些法兰。为了防止过热，凸缘设置有具有通过O形环与法兰间隔开的壁的冷却剂容纳通道。可以改变通道壁与凸缘的间隔，以改变使用通道实现的热接触和冷却的量。

5. 发明授权

US08343583B2 Method for vaporizing non-gaseous precursor in a fluidized bed 有权
标题翻译：在流化床中蒸发非气态前体的方法
公开(公告)号：US08343583B2
公开(公告)日：2013-01-01
申请号：US12498885
申请日：2009-07-07
申请人： Gert Jan Snijders , Ivo Raaijmakers
发明人： Gert Jan Snijders , Ivo Raaijmakers
IPC分类号： C23C16/442
CPC分类号： C23C16/4481
摘要： Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.
摘要翻译：公开了在衬底上沉积膜的方法和系统。在一个实施方案中，一种方法包括将非气态前体转化成气相。转化前体包括：通过以足够高的流速流动气体来形成流化床以悬浮和搅拌多个固体颗粒，并将非气态前体的相转化为流化床中的气相。该方法还包括将气相中的前体转移通过通道; 并且在一个或多个基底上进行沉积，转移的前体在气相中。

6. 发明授权

US07966969B2 Deposition of TiN films in a batch reactor 有权
标题翻译：在间歇式反应器中沉积TiN膜
公开(公告)号：US07966969B2
公开(公告)日：2011-06-28
申请号：US11096861
申请日：2005-03-31
申请人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
发明人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus J. De Blank , Radko Gerard Bankras
IPC分类号： C23C16/52 , C23C16/34 , C23C16/30 , C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译：使用氯化钛（TiCl 4）和氨（NH 3）作为前体在间歇反应器中形成氮化钛（TiN）膜。 TiCl4在时间上分离的脉冲中流入反应器。 NH 3还可以在与TiCl 4脉冲交替的时间间隔的脉冲中流入反应器，或者NH 3可以连续流入反应器中，同时以脉冲引入TiCl 4。所得到的TiN膜具有低电阻率和均匀性。

7. 发明申请

US20070077775A1 Deposition of TiN films in a batch reactor 有权
标题翻译：在间歇式反应器中沉积TiN膜
公开(公告)号：US20070077775A1
公开(公告)日：2007-04-05
申请号：US11634043
申请日：2006-12-04
申请人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus De Blank , Radko Bankras
发明人： Albert Hasper , Gert-Jan Snijders , Lieve Vandezande , Marinus De Blank , Radko Bankras
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45546 , H01L21/28556
摘要： Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.
摘要翻译：在使用氯化钛（TiCl 4 S）和氨（NH 3 3））作为前体的间歇式反应器中形成氮化钛（TiN）膜。 TiCl 4在时间上分离的脉冲中流入反应器。 NH 3还可以在时间间隔的脉冲中流入反应器，该脉冲与TiCl 4脉冲交替，或NH 3 3可以流动连续地进入反应器，同时以脉冲形式引入TiCl 4。所得到的TiN膜具有低电阻率和均匀性。

8. 发明授权

US06877250B2 Apparatus, method and system for the treatment of a wafer 有权
标题翻译：用于处理晶片的装置，方法和系统
公开(公告)号：US06877250B2
公开(公告)日：2005-04-12
申请号：US10316218
申请日：2002-12-10
申请人： Ernst Hendrik August Granneman , Vladimir Ivanovich Kuznetsov , Gert Jan Snijders
发明人： Ernst Hendrik August Granneman , Vladimir Ivanovich Kuznetsov , Gert Jan Snijders
IPC分类号： H01L21/00 , H01L21/687 , F26B7/00 , B65B49/07
CPC分类号： H01L21/68764 , H01L21/67103 , H01L21/67109 , H01L21/67115 , H01L21/68771 , Y10S414/135 , Y10S414/141
摘要： In an apparatus for a treatment of a wafer at elevated temperatures, the wafer is taken out of the reactor after heat treatment with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side. The transport apparatus includes a wafer surrounding ring. The wafer is placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.
摘要翻译：在用于在升高的温度下处理晶片的装置中，借助于优选地将晶片围绕圆周和下侧夹持的机械输送装置，将晶片热处理后从反应器中取出。输送装置包括晶圆周围环。将晶片放置在浮置晶片反应器中，在其中以受控的方式冷却晶片。然后进行进一步行动或治疗的运输。

9. 发明授权

US06876191B2 Apparatus for treating wafers, provided with a sensor box 有权
标题翻译：设置有传感器盒的处理晶片的装置
公开(公告)号：US06876191B2
公开(公告)日：2005-04-05
申请号：US10373645
申请日：2003-02-24
申请人： Christianus Gerardus M. de Ridder , Gert-Jan Snijders , Albert Hasper , Jan Zinger
发明人： Christianus Gerardus M. de Ridder , Gert-Jan Snijders , Albert Hasper , Jan Zinger
IPC分类号： B65G49/07 , H01L21/02 , H01L21/677 , G01R31/02 , G01R31/26
CPC分类号： H01L21/67769
摘要： An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.
摘要翻译：一种用于处理晶片的设备，设有至少一个处理室，该设备设置有馈送部分，其中容纳在晶片存储箱中的晶片可以被馈送到设备中，该设备通过装置设置有晶片处理装置其中可以将晶片从晶片储存盒中取出以便在处理室中进行处理，并且该设备设置有至少一个传感器盒，其布置成使得晶片处理装置可以通过一个晶片处理装置将晶片馈送到传感器盒中所述至少一个传感器盒被布置成在晶片处执行测量，其中所述至少一个传感器盒可移动地布置，并且所述设备设置有传感器盒处理设置成将所述至少一个传感器盒从存储位置移动到测量位置的装置。

10. 发明授权

US06560896B2 Apparatus, method and system for the treatment of a wafer 有权
标题翻译：用于处理晶片的装置，方法和系统
公开(公告)号：US06560896B2
公开(公告)日：2003-05-13
申请号：US09752655
申请日：2000-12-28
申请人： Ernst Hendrik August Granneman , Vladimir Ivanovich Kuznetsov , Gert Jan Snijders
发明人： Ernst Hendrik August Granneman , Vladimir Ivanovich Kuznetsov , Gert Jan Snijders
IPC分类号： F26B2506
CPC分类号： H01L21/68764 , H01L21/67103 , H01L21/67109 , H01L21/67115 , H01L21/68771 , Y10S414/135 , Y10S414/141
摘要： Apparatus, method and system for the treatment of a wafer. After a treatment at elevated temperature, a wafer is taken out of the reactor in question with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side and consists of a wafer surrounding ring. The wafer is then placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.
摘要翻译：用于处理晶片的装置，方法和系统。在升高的温度下处理之后，借助于机械传送装置的帮助，将晶片从所述反应器中取出，该机械传送装置优选地围绕圆周和下侧夹持晶片，并且由晶片周围的环组成。然后将晶片放置在浮置晶片反应器中，在其中以受控的方式冷却晶片。然后进行进一步行动或治疗的运输。

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