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1. 发明授权

US09972496B2 Process for manufacturing a power device with a trench-gate structure and corresponding device 有权
公开(公告)号：US09972496B2
公开(公告)日：2018-05-15
申请号：US12724342
申请日：2010-03-15
申请人： Giacomo Barletta
发明人： Giacomo Barletta
IPC分类号： H01L29/76 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/417 , H01L29/78
CPC分类号： H01L21/28158 , H01L21/28008 , H01L29/41766 , H01L29/42368 , H01L29/66734 , H01L29/7811 , H01L29/7813
摘要： An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first side walls and a first bottom; and further etching said semiconductor substrate to make a second trench inside the first trench, realized in a self-aligned way and below this first trench, the first trench and the second trench defining the trench-gate structure with a bird beak-like transition profile suitable for containing a gate region.

2. 发明申请

US20100230747A1 PROCESS FOR MANUFACTURING A POWER DEVICE WITH A TRENCH-GATE STRUCTURE AND CORRESPONDING DEVICE 有权
标题翻译：制造具有闸门结构和相应装置的电力装置的方法
公开(公告)号：US20100230747A1
公开(公告)日：2010-09-16
申请号：US12724342
申请日：2010-03-15
申请人： Giacomo Barletta
发明人： Giacomo Barletta
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28158 , H01L21/28008 , H01L29/41766 , H01L29/42368 , H01L29/66734 , H01L29/7811 , H01L29/7813
摘要： An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first side walls and a first bottom; and further etching said semiconductor substrate to make a second trench inside the first trench, realized in a self-aligned way and below this first trench, the first trench and the second trench defining the trench-gate structure with a bird beak-like transition profile suitable for containing a gate region.
摘要翻译：一种用于实现集成在半导体衬底上的沟槽栅结构的功率器件的实施例，包括蚀刻半导体衬底以制造具有第一侧壁和第一底部的第一沟槽; 并且进一步蚀刻所述半导体衬底以在所述第一沟槽内部形成第二沟槽，所述第二沟槽以自对准的方式实现并且在所述第一沟槽下方，所述第一沟槽和所述第二沟槽限定所述沟槽栅极结构，所述沟槽栅极结构具有鸟嘴状过渡曲线适合包含门区域。

3. 发明申请

US20130001678A1 HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE WITH AN INSULATED GATE FORMED IN A TRENCH, AND MANUFACTURING PROCESS THEREOF 审中-公开
标题翻译：具有在TRENCH中形成的绝缘栅的高突破电压半导体器件及其制造工艺
公开(公告)号：US20130001678A1
公开(公告)日：2013-01-03
申请号：US13536814
申请日：2012-06-28
申请人： Giacomo Barletta
发明人： Giacomo Barletta
IPC分类号： H01L29/78 , H01L21/283
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/66719 , H01L29/66734
摘要： A semiconductor device includes: a semiconductor body; a trench having side walls and a bottom; a gate region made of conductive material, extending within the trench; an insulating region, extending along bottom portions of the side walls of the trench and on the bottom of the trench; a gate insulating layer, extending along top portions of the side walls of the trench, laterally with respect to the gate region; a conductive region, extending within the trench, surrounded at the top and laterally by the gate region and surrounded at the bottom and laterally by the insulating region; and a field insulating layer, arranged between the gate region and the conductive region. The gate insulating layer includes thickened portions, each of which contacts the insulating region and has a thickness that increases as the depth increases.
摘要翻译：半导体器件包括：半导体本体; 具有侧壁和底部的沟槽; 由导电材料制成的栅极区域，在沟槽内延伸; 绝缘区域，沿着沟槽的侧壁的底部和沟槽的底部延伸; 栅极绝缘层，其相对于栅极区域横向地延伸到沟槽的侧壁的顶部; 在沟槽内延伸的导电区域，在顶部和侧面被栅极区域包围，并且在底部被包围并且被绝缘区域侧向包围; 以及设置在栅极区域和导电区域之间的场绝缘层。栅绝缘层包括加厚部分，每个部分接触绝缘区域并具有随着深度增加而增加的厚度。

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