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1. 发明授权

US07968408B2 MIM capacitor and method of fabricating the same 有权
标题翻译： MIM电容器及其制造方法
公开(公告)号：US07968408B2
公开(公告)日：2011-06-28
申请号：US12203971
申请日：2008-09-04
申请人： Han-Choon Lee
发明人： Han-Choon Lee
IPC分类号： H01L21/336 , H01L29/94
CPC分类号： H01L28/75
摘要： A M-I-M capacitor semiconductor device capable of enhancing the reliability and capacitance of a capacitor and maximizing the integration density of the device, and a method of fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate, a capacitor lower metal layer formed over the semiconductor substrate, a SiN capacitor dielectric layer having a thickness of approximately 30 nm or less formed over the capacitor lower metal layer, and a capacitor upper metal layer formed over a portion of the capacitor dielectric layer and overlapping with the capacitor lower metal layer.
摘要翻译：公开了能够提高电容器的可靠性和电容并且最大化器件的集成密度的M-I-M电容器半导体器件及其制造方法。半导体器件包括半导体衬底，形成在半导体衬底上的电容器下金属层，形成在电容器下金属层上方的厚度约为30nm或更小的SiN电容器电介质层，以及形成在电容器上金属层上的电容器上金属层电容器介电层的一部分并与电容器下金属层重叠。

2. 发明授权

US07964495B2 Method of manufacturing complementary metal oxide semiconductor image sensor 失效
标题翻译：互补金属氧化物半导体图像传感器的制造方法
公开(公告)号：US07964495B2
公开(公告)日：2011-06-21
申请号：US11869498
申请日：2007-10-09
申请人： Han-Choon Lee
发明人： Han-Choon Lee
IPC分类号： H01L21/3213
CPC分类号： H01L27/14636 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/14621 , H01L27/14627 , H01L27/14683 , H01L2224/02166 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/05666 , H01L2224/8501 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/12043 , H01L2924/13091 , H01L2924/19041 , Y10S438/906 , H01L2924/00
摘要： A method of manufacturing a CMOS image sensor manufacturing includes forming a plurality of metal pads over a semiconductor substrate; electrically connecting the metal pads to lower conductive film patterns of multi-layer metal wires using metal contacts; depositing an insulation film over the metal pads; patterning the insulation film to expose at least a portion of the upper surface of the metal pads; and removing impurities from an uppermost surface of the metal pads.
摘要翻译：制造CMOS图像传感器的制造方法包括在半导体衬底上形成多个金属焊盘; 使用金属触点将金属焊盘电连接到多层金属线的下导电膜图案; 在金属垫上沉积绝缘膜; 图案化绝缘膜以暴露金属垫的上表面的至少一部分; 以及从所述金属焊盘的最上表面去除杂质。

3. 发明授权

US07692302B2 SIP semiconductor device and method for manufacturing the same 失效
标题翻译： SIP半导体器件及其制造方法
公开(公告)号：US07692302B2
公开(公告)日：2010-04-06
申请号：US12424003
申请日：2009-04-15
申请人： Han-Choon Lee
发明人： Han-Choon Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L23/481 , H01L24/45 , H01L24/48 , H01L25/0657 , H01L25/50 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2225/06513 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2924/10253 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要： A System In Package (SIP) semiconductor device and a method for manufacturing a SIP device. A TiSiN film may be used as a diffusion barrier film for metal wiring in a SIP semiconductor device. A TiSiN film may provide relatively good step coverage in a relatively easy formation process, which may maximize reliability of a semiconductor device.
摘要翻译：一种系统级封装（SIP）半导体器件及其制造方法。可以使用TiSiN膜作为SIP半导体器件中的金属布线用扩散阻挡膜。 TiSiN膜可以在相对容易的形成过程中提供相对良好的阶梯覆盖，这可使半导体器件的可靠性最大化。

4. 发明申请

US20100000726A1 HEAT EXCHANGER 审中-公开
标题翻译：热交换器
公开(公告)号：US20100000726A1
公开(公告)日：2010-01-07
申请号：US12494716
申请日：2009-06-30
申请人： Sang Yeul LEE , Han Choon LEE , Dong Hwi KIM , Ju Hyok KIM , Hong Seong KIM , Yong Cheol SA
发明人： Sang Yeul LEE , Han Choon LEE , Dong Hwi KIM , Ju Hyok KIM , Hong Seong KIM , Yong Cheol SA
IPC分类号： F28F1/10
CPC分类号： F28D1/0477 , F28F1/32 , F28F1/325 , F28F13/08 , F28F2210/08 , F28F2215/02 , F28F2215/04
摘要： A heat exchanger is provided. The heat exchanger includes at least one fin provided with a plurality of slits and a plurality of refrigerant tubes penetrating the fin. The refrigerant tubes include at least one front line tube and at least one rear line tube having a different diameter from the front line tube with reference to a fluid flow direction. The slits include at least one front line slit and at least one rear line slit having a difference width with reference to the fluid flow direction.
摘要翻译：提供热交换器。热交换器包括设有多个狭缝的至少一个翅片和穿透翅片的多个制冷剂管。制冷剂管相对于流体流动方向包括至少一个前线管和至少一个具有与前管的管直径不同的后管管。狭缝包括至少一个前线狭缝和至少一个相对于流体流动方向具有不同宽度的后线狭缝。

5. 发明申请

US20090065897A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090065897A1
公开(公告)日：2009-03-12
申请号：US12203971
申请日：2008-09-04
申请人： Han-Choon Lee
发明人： Han-Choon Lee
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/75
摘要： A M-I-M capacitor semiconductor device capable of enhancing the reliability and capacitance of a capacitor and maximizing the integration density of the device, and a method of fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate, a capacitor lower metal layer formed over the semiconductor substrate, a SiN capacitor dielectric layer having a thickness of approximately 30 nm or less formed over the capacitor lower metal layer, and a capacitor upper metal layer formed over a portion of the capacitor dielectric layer and overlapping with the capacitor lower metal layer.
摘要翻译：公开了能够提高电容器的可靠性和电容并且最大化器件的集成密度的M-I-M电容器半导体器件及其制造方法。半导体器件包括半导体衬底，形成在半导体衬底上的电容器下金属层，形成在电容器下金属层上方的厚度约为30nm或更小的SiN电容器电介质层，以及形成在电容器上金属层上的电容器上金属层电容器介电层的一部分并与电容器下金属层重叠。

6. 发明申请

US20080277790A1 Semiconductor Device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080277790A1
公开(公告)日：2008-11-13
申请号：US12166267
申请日：2008-07-01
申请人： Han-Choon LEE
发明人： Han-Choon LEE
IPC分类号： H01L23/48
CPC分类号： H01L21/76846 , H01L21/28562 , H01L21/76856 , H01L21/76862 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a semiconductor substrate, an interlayer insulating layer formed on the substrate and having a contact hole partially exposing the substrate, and a diffusion barrier formed on the interlayer insulating layer and in the contact hole. The diffusion barrier comprises a plurality of TaSiN thin films. The present invention advantageously provides a semiconductor device with enhanced step coverage and reduced resistivity of a TaSiN layer.
摘要翻译：具有半导体衬底的半导体器件，在衬底上形成的层间绝缘层，并具有部分暴露衬底的接触孔以及形成在层间绝缘层和接触孔中的扩散阻挡层。扩散阻挡层包括多个TaSiN薄膜。本发明有利地提供了具有增强的台阶覆盖和降低TaSiN层的电阻率的半导体器件。

7. 发明申请

US20080048338A1 Semiconductor Device and Fabrication Method Thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080048338A1
公开(公告)日：2008-02-28
申请号：US11846003
申请日：2007-08-28
申请人： HAN CHOON LEE
发明人： HAN CHOON LEE
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53223 , H01L21/28556 , H01L21/7685 , H01L21/76856 , H01L21/76861 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a fabricating method thereof are provided. An insulating layer pattern has a via hole exposing a lower metal layer, and a copper via is provided inside the via hole. A TiSiN layer is disposed on the insulating layer pattern and the copper via, and an interconnection structure is disposed on the TiSiN layer.
摘要翻译：提供了一种半导体器件及其制造方法。绝缘层图案具有露出下金属层的通孔，并且在通孔内设置铜通孔。在绝缘层图案和铜通孔上设置TiSiN层，并且在TiSiN层上设置互连结构。

8. 发明申请

US20070166985A1 Fabrication Method of Thin Film and Metal Line in Semiconductor Device 审中-公开
标题翻译：半导体器件薄膜和金属线的制造方法
公开(公告)号：US20070166985A1
公开(公告)日：2007-07-19
申请号：US11614101
申请日：2006-12-21
申请人： Han Choon Lee
发明人： Han Choon Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/76861 , H01L21/76856
摘要： A method for fabricating a thin layer in a semiconductor device is provided. The method can include: forming a preliminary layer, in which Ta and F are mixed, on a semiconductor substate by performing an Atomic Layer Deposition (ALD) method; forming a Ta layer by reacting the preliminary layer with B2H6; and forming a TaN layer by performing heat treatment for the Ta layer in N2 atmosphere.
摘要翻译：提供了一种在半导体器件中制造薄层的方法。该方法可以包括：通过执行原子层沉积（ALD）方法在半导体子状态上形成混合有Ta和F的预备层; 通过使预备层与B 2 H 6 C反应形成Ta层; 并通过在N 2气氛中对Ta层进行热处理而形成TaN层。

9. 发明申请

US20070141839A1 Method for fabricating fully silicided gate 有权
标题翻译：完全硅化栅的制造方法
公开(公告)号：US20070141839A1
公开(公告)日：2007-06-21
申请号：US11639257
申请日：2006-12-15
申请人： Dae-Young Kim , Han-Choon Lee
发明人： Dae-Young Kim , Han-Choon Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/28097
摘要： A method for fabricating a fully silicided gate, including forming a gate dielectric layer on a semiconductor substrate, depositing an amorphous silicon layer on the gate dielectric layer, forming a metallic layer on the amorphous silicon layer, depositing a hard mask on the metallic layer, wherein the amorphous silicon layer and the metal layer are silicided due to a thermal budget applied thereto, thereby forming a metal silicide layer, and patterning the metal silicide layer based on the hard mask to form a gate.
摘要翻译：一种制造完全硅化栅的方法，包括在半导体衬底上形成栅介电层，在栅介电层上沉积非晶硅层，在非晶硅层上形成金属层，在金属层上沉积硬掩模，其中由于施加到其上的热预算，非晶硅层和金属层被硅化，从而形成金属硅化物层，并且基于硬掩模构图金属硅化物层以形成栅极。

10. 发明申请

US20060148246A1 Method of forming a diffusion barrier layer using a TaSiN layer and method of forming a metal interconnection line using the same 失效
标题翻译：使用TaSiN层形成扩散阻挡层的方法和使用其形成金属互连线的方法
公开(公告)号：US20060148246A1
公开(公告)日：2006-07-06
申请号：US11317362
申请日：2005-12-23
申请人： Han-Choon Lee
发明人： Han-Choon Lee
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76856
摘要： The present invention provides a method of forming a diffusion barrier layer comprising a TaSiN layer. The method includes depositing a TaN layer into a via hole which penetrates an insulation layer exposing a first metal line layer, and transforming the TaN layer into a TaSiN layer using a radio frequency (RF) power and a (remote) plasma using SiH4 gas. Transforming the TaN layer into a TaSiN layer may include: loading a structure including the TaN layer into a plasma reaction chamber; injecting SiH4 gas into the plasma reaction chamber; and forming the TaSiN layer by reacting Si- or Si atom-containing species with the TaN layer.
摘要翻译：本发明提供一种形成包含TaSiN层的扩散阻挡层的方法。该方法包括将TaN层沉积到穿透暴露第一金属线层的绝缘层的通孔中，并且使用射频（RF）功率和（远程）等离子体将TaN层转变成TaSiN层，使用SiH _{4气体。将TaN层转变成TaSiN层可以包括：将包括TaN层的结构加载到等离子体反应室中; 将SiH 4 O 4气体注入到等离子体反应室中; 并通过使含Si或Si原子的物质与TaN层反应形成TaSiN层。}

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