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1. 发明申请

US20110266690A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS 有权
标题翻译：半导体器件，半导体器件的制造方法，电子元件，电路基板和电子设备
公开(公告)号：US20110266690A1
公开(公告)日：2011-11-03
申请号：US13185039
申请日：2011-07-18
申请人： Haruki ITO , Nobuaki HASHIMOTO
发明人： Haruki ITO , Nobuaki HASHIMOTO
IPC分类号： H01L23/52
CPC分类号： H01L23/481 , H01L23/4824 , H01L23/50 , H01L23/522 , H01L24/12 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/05025 , H01L2224/05027 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05186 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/05686 , H01L2224/16 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12042 , H01L2924/14 , H03H9/0547 , H03H9/0552 , H03H9/1071 , H01L2924/00 , H01L2924/00014 , H01L2924/013 , H01L2924/01074 , H01L2924/01023
摘要： A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.
摘要翻译：半导体器件包括：半导体衬底，包括在与第一面相对的一侧上的第一面和第二面; 形成在所述半导体衬底的第一面上的外部连接端子; 形成在所述半导体衬底的第一面上并电连接到所述外部连接端子的第一电极; 形成在所述半导体衬底的第二面上或上的电子元件; 电连接到所述电子元件并具有顶面和后表面的第二电极; 形成在所述半导体基板的第二面上并且具有包括所述第二电极的后表面的至少一部分的底面的槽部; 以及形成在所述槽部中并且电连接到所述第二电极的后表面的导电部分。

2. 发明授权

US07982310B2 Semiconductor device, method of manufacturing thereof, circuit board and electronic apparatus 有权
标题翻译：半导体装置及其制造方法，电路基板及电子设备
公开(公告)号：US07982310B2
公开(公告)日：2011-07-19
申请号：US12569478
申请日：2009-09-29
申请人： Haruki Ito
发明人： Haruki Ito
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/5226 , H01L23/293 , H01L23/3114 , H01L23/3192 , H01L23/49816 , H01L23/5329 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/17 , H01L2224/02125 , H01L2224/02126 , H01L2224/02331 , H01L2224/0236 , H01L2224/02373 , H01L2224/02375 , H01L2224/02377 , H01L2224/02379 , H01L2224/02381 , H01L2224/024 , H01L2224/11334 , H01L2224/1146 , H01L2224/13014 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2224/14131 , H01L2224/16225 , H01L2224/16227 , H01L2224/94 , H01L2924/0002 , H01L2924/01022 , H01L2924/01029 , H01L2924/01074 , H01L2924/013 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/186 , H01L2924/3512 , H01L2924/00 , H01L2224/11
摘要： A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.
摘要翻译：提供一种半导体器件，包括：包括多个电极的半导体元件; 第一布线耦合到电极并且从耦合到电极的部分引导到半导体元件的中心; 耦合在第一布线和外部端子之间的第二布线，第二布线相对于中心引导到半导体元件的外部区域; 以及形成在第一布线和第二布线之间的至少一个树脂层。

3. 发明授权

US07888799B2 Semiconductor device, circuit substrate, electro-optic device and electronic appliance 失效
标题翻译：半导体器件，电路基板，电光器件和电子设备
公开(公告)号：US07888799B2
公开(公告)日：2011-02-15
申请号：US12776667
申请日：2010-05-10
申请人： Shuichi Tanaka , Haruki Ito , Yasuhito Aruga , Ryohei Tamura , Michiyoshi Takano
发明人： Shuichi Tanaka , Haruki Ito , Yasuhito Aruga , Ryohei Tamura , Michiyoshi Takano
IPC分类号： H01L23/48
CPC分类号： G09G3/006 , H01L27/14601 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/16 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014
摘要： A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection.
摘要翻译：第一实施例中的半导体器件包括：形成在有源表面上的电极焊盘和树脂突起; 从所述电极焊盘的表面沉积到所述树脂突起的表面的导电膜; 树脂凸起与树脂突起形成并与导电膜形成。半导体器件通过树脂凸块电极导电地连接到相对的基板。测试电极由导电膜形成，该导电膜延伸并施加到穿过树脂突起的电极焊盘的相对侧。

4. 发明申请

US20060288572A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20060288572A1
公开(公告)日：2006-12-28
申请号：US11446731
申请日：2006-06-05
申请人： Shuichi Tanaka , Haruki Ito
发明人： Shuichi Tanaka , Haruki Ito
IPC分类号： H05K3/10 , H01K3/22
CPC分类号： H01L24/13 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05548 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05671 , H01L2224/114 , H01L2224/116 , H01L2224/13099 , H01L2224/131 , H01L2224/13624 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13664 , H01L2224/13666 , H01L2224/13671 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/07802 , H01L2924/12044 , H01L2924/14 , H01L2924/19043 , Y10T29/49155 , Y10T29/49158 , Y10T29/49204 , Y10T29/49224 , H01L2924/0665 , H01L2924/00014 , H01L2924/01074 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes (a) forming a first resin layer on a semiconductor substrate including an electrode pad and a passivation film, (b) curing the first resin layer, (c) forming a second resin layer which slopes more gently than the cured first resin layer on at least a lower portion of the first resin layer, (d) curing the second resin layer to form a resin protrusion including the first and second resin layers, and (e) forming a conductive layer which is electrically connected with the electrode pad and passes over the resin protrusion.
摘要翻译：一种制造半导体器件的方法包括：（a）在包括电极焊盘和钝化膜的半导体衬底上形成第一树脂层，（b）固化第一树脂层，（c）形成更缓和地倾斜的第二树脂层比第一树脂层的至少下部固化的第一树脂层，（d）固化第二树脂层以形成包括第一和第二树脂层的树脂突起，以及（e）形成导电层，其为电与电极焊盘连接并且越过树脂突起。

5. 发明授权

US07132749B2 Semiconductor device, method for manufacturing the same, circuit substrate, electro-optical apparatus, and electronic equipment 有权
标题翻译：半导体装置及其制造方法，电路基板，电光装置和电子设备
公开(公告)号：US07132749B2
公开(公告)日：2006-11-07
申请号：US11099255
申请日：2005-04-05
申请人： Haruki Ito
发明人： Haruki Ito
IPC分类号： H01L23/48
CPC分类号： H01L24/14 , G02F1/13458 , H01L21/4846 , H01L23/485 , H01L24/02 , H01L24/11 , H01L24/13 , H01L2224/0236 , H01L2224/02375 , H01L2224/02377 , H01L2224/024 , H01L2224/0401 , H01L2224/05124 , H01L2224/114 , H01L2224/1145 , H01L2224/1146 , H01L2224/1161 , H01L2224/11622 , H01L2224/11901 , H01L2224/12105 , H01L2224/13008 , H01L2224/13013 , H01L2224/13018 , H01L2224/1319 , H01L2224/13582 , H01L2224/13644 , H01L2224/13666 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3025 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.
摘要翻译：半导体器件具有多个由树脂制成并且高于电极的突起，以及与电极电连接并覆盖突起的顶表面的导电层。一种半导体器件的制造方法，其特征在于，除了电极以外，还具有对半导体装置施加一层树脂的工序，根据突起对电极上的导电层和树脂层进行图案化的工序，通过使用图案化的导电层作为掩模去除位于导电层之间的树脂层以形成突起的步骤。

6. 发明申请

US20060049840A1 Test probe and tester, method for manufacturing the test probe 有权
标题翻译：测试探针和测试仪，制造测试探针的方法
公开(公告)号：US20060049840A1
公开(公告)日：2006-03-09
申请号：US11184763
申请日：2005-07-19
申请人： Haruki Ito , Shinji Mizuno , Koji Yamaguchi
发明人： Haruki Ito , Shinji Mizuno , Koji Yamaguchi
IPC分类号： G01R31/02
CPC分类号： G09G3/006 , G01R1/06761 , G01R1/07314 , G09G3/3622 , Y10T29/49204
摘要： A test probe having a conductive part electrically connected to terminals of a test-object device, including: a silicon substrate; a protrusion made of resin provided on the silicon substrate; a first conductive part which is provided on the protrusion and comes in contact with the terminals; and a second conductive part which is provided in a region other than a region having the protrusion on the silicon substrate and is electrically connected to the first conductive part.
摘要翻译：一种测试探针，其具有与测试对象器件的端子电连接的导电部分，包括：硅衬底; 设置在硅基板上的由树脂制成的突起; 第一导电部，设置在突起上并与端子接触; 以及第二导电部，其设置在除了在所述硅基板上具有所述突起的区域以外的区域中，并且与所述第一导电部电连接。

7. 发明申请

US20050275115A1 Semiconductor device, circuit substrate, electro-optic device and electronic appliance 失效
标题翻译：半导体器件，电路基板，电光器件和电子设备
公开(公告)号：US20050275115A1
公开(公告)日：2005-12-15
申请号：US11128848
申请日：2005-05-13
申请人： Shuichi Tanaka , Haruki Ito , Yasuhito Aruga , Ryohei Tamura , Michiyoshi Takano
发明人： Shuichi Tanaka , Haruki Ito , Yasuhito Aruga , Ryohei Tamura , Michiyoshi Takano
IPC分类号： G02F1/1345 , G09G3/00 , H01L21/3205 , H01L21/60 , H01L23/52 , H01L27/146 , H01L29/40
CPC分类号： G09G3/006 , H01L27/14601 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/16 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014
摘要： A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection.
摘要翻译：第一实施例中的半导体器件包括：形成在有源表面上的电极焊盘和树脂突起; 从所述电极焊盘的表面沉积到所述树脂突起的表面的导电膜; 树脂凸起与树脂突起形成并与导电膜形成。半导体器件通过树脂凸块电极导电地连接到相对的基板。测试电极由导电膜形成，该导电膜延伸并施加到穿过树脂突起的电极焊盘的相对侧。

8. 发明授权

US5164219A Method of preparation of a patterned decorative material 失效
标题翻译：图案化装饰材料的制备方法
公开(公告)号：US5164219A
公开(公告)日：1992-11-17
申请号：US721288
申请日：1991-06-26
申请人： Kenzou Maeda , Haruki Ito
发明人： Kenzou Maeda , Haruki Ito
IPC分类号： B29C43/02 , B29C59/04 , B44C1/24
CPC分类号： B44C1/24 , B29C43/021 , B29C59/046
摘要： A patterned decorative material is prepared by a method which comprises applying a thermosetting powder coating material to a base plate; melting of the thermosetting powder coating material by heating; simultaneously embossing the coating layer and the base plate while the melted thermosetting powder coating material has a gel fraction formed by a hardening reaction of 0 to 75 weight percent; and further heating to form a hardened coating on the base plate. The patterned decorative material is excellent in appearance, corrosion resistance, weathering resistance and abrasion resistance and is free from the defects of conventional steel plates coated with polyvinyl chloride and the like, such as formation of craze and loss of luster.
摘要翻译：图案化装饰材料通过包括将热固性粉末涂料施加于基板的方法制备; 通过加热熔化热固性粉末涂料; 同时对涂层和基板进行压花，同时熔化的热固性粉末涂料具有通过0至75重量％的硬化反应形成的凝胶分数; 并进一步加热以在基板上形成硬化涂层。图案化的装饰材料的外观，耐腐蚀性，耐候性和耐磨性优异，并且不存在涂覆有聚氯乙烯等的常规钢板的缺陷，例如形成热潮和失光。

9. 发明申请

US20120261815A1 SEALED SURFACE ACOUSTIC WAVE ELEMENT PACKAGE 有权
标题翻译：密封表面声波元件包装
公开(公告)号：US20120261815A1
公开(公告)日：2012-10-18
申请号：US13531043
申请日：2012-06-22
申请人： Haruki ITO , Nobuaki HASHIMOTO
发明人： Haruki ITO , Nobuaki HASHIMOTO
IPC分类号： H01L23/498
CPC分类号： H03H9/0552 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05186 , H01L2224/05569 , H01L2224/05572 , H01L2224/13 , H03H9/059 , H03H9/1071 , H01L2924/00014 , H01L2924/04941 , H01L2924/01074 , H01L2924/01023 , H01L2924/013
摘要： An electronic component includes: a semiconductor substrate having a first surface and a second surface opposing to the first surface; a trans-substrate conductive plug that penetrates the semiconductor substrate from the first surface to the second surface; an electronic element provided in the vicinity of the first surface of the semiconductor; and a sealing member that seals the electronic element between the sealing member and the first surface, wherein the electronic element is electrically connected to the trans-substrate conductive plug.
摘要翻译：电子部件包括：具有第一表面和与第一表面相对的第二表面的半导体衬底; 从所述第一表面到所述第二表面穿透所述半导体衬底的跨基板导电插塞; 设置在所述半导体的第一表面附近的电子元件; 以及密封构件，其密封所述密封构件和所述第一表面之间的所述电子元件，其中所述电子元件电连接到所述跨基板导电插塞。

10. 发明授权

US08004077B2 Interconnection of land section to wiring layers at center of external connection terminals in semiconductor device and manufacturing thereof 有权
标题翻译：半导体器件中的外部连接端子的中心的接地部与布线层的互连及其制造
公开(公告)号：US08004077B2
公开(公告)日：2011-08-23
申请号：US12947861
申请日：2010-11-17
申请人： Haruki Ito , Nobuaki Hashimoto
发明人： Haruki Ito , Nobuaki Hashimoto
IPC分类号： H01L23/04 , H01L21/28
CPC分类号： H01L23/481 , H01L23/4824 , H01L23/50 , H01L23/522 , H01L24/12 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/05025 , H01L2224/05027 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05186 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/05686 , H01L2224/16 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12042 , H01L2924/14 , H03H9/0547 , H03H9/0552 , H03H9/1071 , H01L2924/00 , H01L2924/00014 , H01L2924/013 , H01L2924/01074 , H01L2924/01023
摘要： A semiconductor device comprising: a substrate; a terminal on the substrate's first surface; a first electrode on the first surface connected to the terminal; an electronic element on the substrate's second surface; a second electrode connected to the electronic element; a groove on the second surface leading to the second electrode; a conductive portion inside the grove connected to the second electrode's rear face; a first wiring on the first surface connected to the first electrode; a second wiring connecting the first wiring and the terminal; a stress-absorbing layer between the substrate and terminal; a land connecting the first wiring and the second wiring, the land opening a part of the stress-absorbing layer and exposing the first wiring, the land being in a region surrounded by terminals, and the land being along a straight line connecting the centers of diagonal terminals, with the region between the terminals.
摘要翻译：一种半导体器件，包括：衬底; 在基板的第一表面上的端子; 连接到所述端子的所述第一表面上的第一电极; 基板的第二表面上的电子元件; 连接到所述电子元件的第二电极; 在通过第二电极的第二表面上的凹槽; 连接到第二电极的后表面的槽中的导电部分; 连接到第一电极的第一表面上的第一布线; 连接第一布线和端子的第二布线; 衬底和端子之间的应力吸收层; 连接所述第一布线和所述第二布线的区域，所述开口部分是所述应力吸收层的一部分并且暴露所述第一布线，所述平台位于由端子包围的区域中，并且所述平台沿着连接所述第一布线的中心的直线对角端子，端子之间的区域。

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