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1. 发明授权

US07826289B2 Semiconductor memory device and method for driving the same 失效
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US07826289B2
公开(公告)日：2010-11-02
申请号：US11967501
申请日：2007-12-31
申请人： Hi-Hyun Han
发明人： Hi-Hyun Han
IPC分类号： G11C7/00
CPC分类号： G11C7/08
摘要： A semiconductor memory device includes: a driving voltage supplying unit configured to detect a simultaneous activation of banks and selectively supply one of a high voltage and an external voltage lower than the high voltage as a driving voltage; a flag detecting unit configured to detect inputs of flag signals activated in response to an active command and generate a precharge control signal; and a signal generating unit configured to generate a bit line precharge signal swinging between the driving voltage and a ground voltage in response to the precharge control signal.
摘要翻译：半导体存储器件包括：驱动电压提供单元，被配置为检测堤的同时激活，并且选择性地将低于高电压的高电压和外部电压中的一个提供为驱动电压; 标志检测单元，被配置为检测响应于有效命令而被激活的标志信号的输入，并产生预充电控制信号; 以及信号生成单元，被配置为响应于预充电控制信号而产生在驱动电压和接地电压之间摆动的位线预充电信号。

2. 发明授权

US07688644B2 Semiconductor memory device and its driving method 失效
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US07688644B2
公开(公告)日：2010-03-30
申请号：US11824427
申请日：2007-06-29
申请人： Hi-Hyun Han
发明人： Hi-Hyun Han
IPC分类号： G11C7/00
CPC分类号： G11C8/10
摘要： A semiconductor memory device includes an address latch unit, a decoding circuit, and a precharge control unit. The address latch unit provides a latched address during an active operation interval and a precharge operation interval. The decoding circuit decodes an output of the address latch unit to provide a decoded signal to activate a word line arranged in a data storage area. The precharge control unit controls the decoded signal to be disabled during the precharge operation interval.
摘要翻译：半导体存储器件包括地址锁存单元，解码电路和预充电控制单元。地址锁存单元在活动操作间隔和预充电操作间隔期间提供锁存地址。解码电路对地址锁存单元的输出进行解码以提供解码信号以激活布置在数据存储区域中的字线。预充电控制单元在预充电操作间隔期间控制解码信号被禁用。

3. 发明申请

US20080067614A1 METAL OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：金属氧化物半导体晶体管及其制造方法
公开(公告)号：US20080067614A1
公开(公告)日：2008-03-20
申请号：US11945118
申请日：2007-11-26
申请人： Jun-Gi Choi , Hi-Hyun Han
发明人： Jun-Gi Choi , Hi-Hyun Han
IPC分类号： H01L29/78
CPC分类号： H01L29/41725 , H01L29/78
摘要： A metal oxide semiconductor (MOS) transistor includes a source region having at least one source contact; a drain region having at least one drain contact; and a gate provided between the source region and the drain region, wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region.
摘要翻译：金属氧化物半导体（MOS）晶体管包括具有至少一个源极接触的源极区域; 漏区，具有至少一个漏极接触; 以及设置在源极区域和漏极区域之间的栅极，其中包括在源极区域中的源极触点的数量不同于源极区域中包括的漏极触点的数量。

4. 发明授权

US07312509B2 Digital temperature sensing device using temperature depending characteristic of contact resistance 有权
标题翻译：数字温度传感器采用接触电阻的温度依赖特性
公开(公告)号：US07312509B2
公开(公告)日：2007-12-25
申请号：US11146043
申请日：2005-06-07
申请人： Hi-Hyun Han , Jun-Gi Choi
发明人： Hi-Hyun Han , Jun-Gi Choi
IPC分类号： H01L21/8242
CPC分类号： G01K7/01 , G01K7/226
摘要： A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self-refresh driving device includes a first reference voltage generating unit for generating a reference voltage robust to temperature, the first reference voltage generating means being formed with a plurality of MOS transistors, the number of source contacts of the MOS transistors being adjusted such that variation of saturation current through source-drain is compensated for; a second reference voltage generating unit for generating a second reference voltage sensitive to temperature; a level comparator for comparing the first reference voltage with the second reference voltage; and an oscillator for generating a clock signals having differing period depending on the output signal of the level comparator.
摘要翻译：数字温度感测装置使用MOS晶体管的接触电阻的温度依赖特性，并且自刷新驱动装置使用数字温度感测装置根据温度调节其自刷新周期。自刷新驱动装置包括：第一参考电压产生单元，用于产生对温度稳定的参考电压，第一参考电压产生装置形成有多个MOS晶体管，调节MOS晶体管的源极触点数，使得通过源极漏极的饱和电流变化得到补偿; 第二参考电压产生单元，用于产生对温度敏感的第二参考电压; 电平比较器，用于将第一参考电压与第二参考电压进行比较; 以及用于根据电平比较器的输出信号产生具有不同周期的时钟信号的振荡器。

5. 发明申请

US20060138582A1 Digital temperature sensing device using temperature depending characteristic of contact resistance 有权
公开(公告)号：US20060138582A1
公开(公告)日：2006-06-29
申请号：US11146043
申请日：2005-06-07
申请人： Hi-Hyun Han , Jun-Gi Choi
发明人： Hi-Hyun Han , Jun-Gi Choi
IPC分类号： G01K7/00 , H01L31/058 , G01N27/04
CPC分类号： G01K7/01 , G01K7/226
摘要： A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self-refresh driving device includes a first reference voltage generating unit for generating a reference voltage robust to temperature, the first reference voltage generating means being formed with a plurality of MOS transistors, the number of source contacts of the MOS transistors being adjusted such that variation of saturation current through source-drain is compensated for; a second reference voltage generating unit for generating a second reference voltage sensitive to temperature; a level comparator for comparing the first reference voltage with the second reference voltage; and an oscillator for generating a clock signals having differing period depending on the output signal of the level comparator.

6. 发明授权

US07564728B2 Semiconductor memory device and its driving method 失效
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US07564728B2
公开(公告)日：2009-07-21
申请号：US11477392
申请日：2006-06-30
申请人： Hi-Hyun Han
发明人： Hi-Hyun Han
IPC分类号： G11C7/12
CPC分类号： G11C7/12 , G11C11/4074 , G11C11/4094
摘要： A semiconductor memory device controls the voltage level of an equalization signal to be a boost voltage VPP for a predetermined time period and then to be an external power supply voltage VDD, when the equalization signal is repeated by a repeater. In order to improve bit line precharging performance of the bit line precharge portion enabled by the equalization signal, a rising interval of the equalization signal is activated as the boost voltage. Precharging is then performed with the external supply voltage after a predetermined time period. Thus, a thin gate insulating membrane can be used in a transistor in the bit line precharge portion which receives the equalization signal can be formed.
摘要翻译：当均衡信号由中继器重复时，半导体存储器件将均衡信号的电压电平控制为预定时间段的升压电压VPP，然后将其作为外部电源电压VDD。为了提高由均衡信号使能的位线预充电部分的位线预充电性能，均衡信号的上升间隔被激活为升压电压。然后在预定时间段之后用外部电源电压进行预充电。因此，可以在可以形成接收均衡信号的位线预充电部分中的晶体管中使用薄栅极绝缘膜。

7. 发明申请

US20080247248A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME 失效
标题翻译：半导体存储器件及其驱动方法
公开(公告)号：US20080247248A1
公开(公告)日：2008-10-09
申请号：US11967501
申请日：2007-12-31
申请人： Hi-Hyun HAN
发明人： Hi-Hyun HAN
IPC分类号： G11C7/12
CPC分类号： G11C7/08
摘要： A semiconductor memory device includes: a driving voltage supplying unit configured to detect a simultaneous activation of banks and selectively supply one of a high voltage and an external voltage lower than the high voltage as a driving voltage; a flag detecting unit configured to detect inputs of flag signals activated in response to an active command and generate a precharge control signal; and a signal generating unit configured to generate a bit line precharge signal swinging between the driving voltage and a ground voltage in response to the precharge control signal.
摘要翻译：半导体存储器件包括：驱动电压提供单元，被配置为检测堤的同时激活，并且选择性地将低于高电压的高电压和外部电压中的一个提供为驱动电压; 标志检测单元，被配置为检测响应于有效命令而被激活的标志信号的输入，并产生预充电控制信号; 以及信号生成单元，被配置为响应于预充电控制信号而产生在驱动电压和接地电压之间摆动的位线预充电信号。

8. 发明申请

US20090116322A1 Semiconductor memory device having wafer burn-in test mode 有权
标题翻译：具有晶片老化测试模式的半导体存储器件
公开(公告)号：US20090116322A1
公开(公告)日：2009-05-07
申请号：US12005853
申请日：2007-12-28
申请人： Hi-Hyun Han , Jee-Yul Kim
发明人： Hi-Hyun Han , Jee-Yul Kim
IPC分类号： G11C29/14
CPC分类号： G11C29/006 , G11C11/401 , G11C29/14
摘要： A semiconductor memory device includes an enable signal generator configured to generate an enable signal in response to a plurality of burn-in test signals; a test mode signal generator configured to generate a plurality of peripheral region test mode signals and a plurality of core region test mode signals corresponding to the burn-in test signals in response to the enable signal; a core region controller configured to control circuits in a core region in response to the core region test mode signals; and a peripheral region controller configured to control circuits in a peripheral region in response to the peripheral region test mode signals.
摘要翻译：半导体存储器件包括：使能信号发生器，被配置为响应于多个老化测试信号产生使能信号; 测试模式信号发生器，其被配置为响应于所述使能信号而生成与所述老化测试信号相对应的多个外围区域测试模式信号和多个核心区域测试模式信号; 核心区域控制器，被配置为响应于核心区域测试模式信号来控制核心区域中的电路; 以及外围区域控制器，被配置为响应于外围区域测试模式信号来控制外围区域中的电路。

9. 发明申请

US20080159016A1 Voltage generating circuit of semiconductor memory apparatus capable of reducing power consumption 失效
标题翻译：能够降低功耗的半导体存储装置的电压产生电路
公开(公告)号：US20080159016A1
公开(公告)日：2008-07-03
申请号：US11826328
申请日：2007-07-13
申请人： Hi Hyun Han
发明人： Hi Hyun Han
IPC分类号： G11C7/12
CPC分类号： G11C7/08 , G11C5/147
摘要： A voltage generating circuit of a semiconductor memory apparatus is provided including a voltage generator that generates a core voltage in response to a voltage generating signal, a voltage drop part that drops a level of the core voltage to a predetermined target level when the level of the core voltage is increased by an overdrive operation, and a voltage generation controller that disables the voltage generating signal when the overdrive operation is performed so as to stop the driving of the voltage generator.
摘要翻译：提供了一种半导体存储装置的电压产生电路，包括：响应于电压产生信号产生核心电压的电压发生器;当电压下降时，将核心电压的电平降低到预定的目标电平通过过驱动操作增加内核电压;以及电压发生控制器，其在执行过驱动操作时禁止电压产生信号，以停止电压发生器的驱动。

10. 发明申请

US20080061868A1 Digital temperature sensing device using temperature depending characteristic of contact resistance 有权
标题翻译：数字温度传感器采用接触电阻的温度依赖特性
公开(公告)号：US20080061868A1
公开(公告)日：2008-03-13
申请号：US11979871
申请日：2007-11-09
申请人： Hi-Hyun Han , Jun-Gi Choi
发明人： Hi-Hyun Han , Jun-Gi Choi
IPC分类号： G05F1/567
CPC分类号： G01K7/01 , G01K7/226
摘要： A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self-refresh driving device includes a first reference voltage generating unit for generating a reference voltage robust to temperature, the first reference voltage generating means being formed with a plurality of MOS transistors, the number of source contacts of the MOS transistors being adjusted such that variation of saturation current through source-drain is compensated for; a second reference voltage generating unit for generating a second reference voltage sensitive to temperature; a level comparator for comparing the first reference voltage with the second reference voltage; and an oscillator for generating a clock signals having differing period depending on the output signal of the level comparator.
摘要翻译：数字温度感测装置使用MOS晶体管的接触电阻的温度依赖特性，并且自刷新驱动装置使用数字温度感测装置根据温度调节其自刷新周期。自刷新驱动装置包括：第一参考电压产生单元，用于产生对温度稳定的参考电压，第一参考电压产生装置形成有多个MOS晶体管，调节MOS晶体管的源极触点数，使得通过源极漏极的饱和电流变化得到补偿; 第二参考电压产生单元，用于产生对温度敏感的第二参考电压; 电平比较器，用于将第一参考电压与第二参考电压进行比较; 以及用于根据电平比较器的输出信号产生具有不同周期的时钟信号的振荡器。

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