专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08753448B2 Apparatus and method for manufacturing compound semiconductor, and compound semiconductor manufactured thereby 有权
标题翻译：用于制造化合物半导体的装置和方法，以及由此制造的化合物半导体
公开(公告)号：US08753448B2
公开(公告)日：2014-06-17
申请号：US13403571
申请日：2012-02-23
申请人： Hideki Yasuhara , Akira Bandoh
发明人： Hideki Yasuhara , Akira Bandoh
IPC分类号： C23C16/458 , B05C13/02
CPC分类号： C23C16/4583 , C23C16/303 , C23C16/4584 , C23C16/4585 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/68735 , H01L21/68764 , H01L21/68771
摘要： Provided is an apparatus for manufacturing a compound semiconductor by use of metal organic chemical vapor deposition including: a reaction container; a holder on which a formed body is to be placed so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed faces upward, the holder being arranged in the reaction container; and a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside, wherein the holder includes a support member supporting the formed body so that an undersurface of the formed body and a top surface of the holder on which the formed body is to be placed keep a predetermined distance.
摘要翻译：提供一种通过使用金属有机化学气相沉积来制造化合物半导体的装置，包括：反应容器; 要形成成形体的保持器，使得要形成化合物半导体层的成形体的成形表面朝上，保持器布置在反应容器中; 以及从外部将化合物半导体的原料气体供给到反应容器中的材料供给口，其特征在于，所述保持架包括支撑所述成形体的支撑部件，使得所述成形体的下表面与所述保持件的顶面形成身体被放置保持预定的距离。

2. 发明申请

US20120146191A1 APPARATUS AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR, AND COMPOUND SEMICONDUCTOR MANUFACTURED THEREBY 有权
标题翻译：制造化合物半导体的装置和方法及其制造的化合物半导体
公开(公告)号：US20120146191A1
公开(公告)日：2012-06-14
申请号：US13403571
申请日：2012-02-23
申请人： Hideki YASUHARA , Akira BANDOH
发明人： Hideki YASUHARA , Akira BANDOH
IPC分类号： H01L29/20 , H01L21/365 , C23C16/00
CPC分类号： C23C16/4583 , C23C16/303 , C23C16/4584 , C23C16/4585 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/68735 , H01L21/68764 , H01L21/68771
摘要： Provided is an apparatus for manufacturing a compound semiconductor by use of metal organic chemical vapor deposition including: a reaction container; a holder on which a formed body is to be placed so that a formed surface of the formed body on which layers of a compound semiconductor are to be formed faces upward, the holder being arranged in the reaction container; and a material supply port supplying a material gas of the compound semiconductor into the reaction container from outside, wherein the holder includes a support member supporting the formed body so that an undersurface of the formed body and a top surface of the holder on which the formed body is to be placed keep a predetermined distance.
摘要翻译：提供一种通过使用金属有机化学气相沉积来制造化合物半导体的装置，包括：反应容器; 要形成成形体的保持器，使得要形成化合物半导体层的成形体的成形表面朝上，保持器布置在反应容器中; 以及从外部将化合物半导体的原料气体供给到反应容器中的材料供给口，其特征在于，所述保持架包括支撑所述成形体的支撑部件，使得所述成形体的下表面与所述保持件的顶面形成身体被放置保持预定的距离。

3. 发明授权

US09064696B2 Apparatus for manufacturing compound semiconductor, method for manufacturing compound semiconductor, and compound semiconductor 有权
标题翻译：用于制造化合物半导体的装置，化合物半导体的制造方法和化合物半导体
公开(公告)号：US09064696B2
公开(公告)日：2015-06-23
申请号：US13817388
申请日：2011-08-16
申请人： Hideki Yasuhara , Akira Bandoh
发明人： Hideki Yasuhara , Akira Bandoh
IPC分类号： H01L21/20 , H01L21/02 , C23C16/458 , C30B25/12 , H01L21/687 , C30B25/02 , C30B29/40 , H01L33/00
CPC分类号： H01L21/02293 , C23C16/4583 , C30B25/02 , C30B25/12 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/6875 , H01L21/68757 , H01L21/68764 , H01L21/68771 , H01L33/007
摘要： Provided is an apparatus for manufacturing a compound semiconductor, which forms a compound semiconductor layer using a metal-organic chemical vapor deposition method. The apparatus is characterized in that: the apparatus is provided with a reaction container, a holder, which is disposed in the reaction container and has placed thereon a subject, on which the layer is to be formed, the subject having facing up the subject surface where the layer is to be formed, and a raw material supply port, through which the raw material gas of the compound semiconductor is supplied to the inside of the reaction container from the outside; the holder is in contact with the lower surface of the subject, the contact being inside of the outer circumferential portion of the subject to the center of the upper surface of the holder; and that the holder has a supporting portion, which supports the subject such that a predetermined interval is maintained between the upper surface of the holder and the lower surface of the subject. In the manufacture of the compound semiconductor using the MOCVD method, temperature distribution on the substrate surface to be deposited with a compound semiconductor crystal, and deviation of in-plane averaged light emission wavelength from a target value are suppressed using the apparatus.
摘要翻译：提供一种使用金属有机化学气相沉积法形成化合物半导体层的化合物半导体的制造装置。该装置的特征在于：该装置设置有反应容器，保持器，其设置在反应容器中并且放置在其上将要形成该层的被摄体，被摄体具有面向对象表面以及将来自外部的化合物半导体的原料气体从该原料供给口供给反应容器的内部的原料供给口，所述保持器与所述被检体的下表面接触，所述接触部位于所述被检体的外周部分的内侧到所述保持器的上表面的中心; 并且保持器具有支撑部分，该支撑部分支撑受试者，使得在保持器的上表面和被检体的下表面之间保持预定的间隔。在使用MOCVD法的化合物半导体的制造中，使用该装置抑制了使用化合物半导体晶体沉积的衬底表面上的温度分布和面内平均发光波长与目标值的偏差。

4. 发明申请

US20130143393A1 APPARATUS FOR MANUFACTURING COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR, AND COMPOUND SEMICONDUCTOR 有权
标题翻译：制造化合物半导体的装置，制造化合物半导体的方法和化合物半导体
公开(公告)号：US20130143393A1
公开(公告)日：2013-06-06
申请号：US13817388
申请日：2011-08-16
申请人： Hideki Yasuhara , Akira Bandoh
发明人： Hideki Yasuhara , Akira Bandoh
IPC分类号： H01L21/02
CPC分类号： H01L21/02293 , C23C16/4583 , C30B25/02 , C30B25/12 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/6875 , H01L21/68757 , H01L21/68764 , H01L21/68771 , H01L33/007
摘要： Provided is an apparatus for manufacturing a compound semiconductor, which forms a compound semiconductor layer using a metal-organic chemical vapor deposition method. The apparatus is characterized in that: the apparatus is provided with a reaction container, a holder, which is disposed in the reaction container and has placed thereon a subject, on which the layer is to be formed, the subject having facing up the subject surface where the layer is to be formed, and a raw material supply port, through which the raw material gas of the compound semiconductor is supplied to the inside of the reaction container from the outside; the holder is in contact with the lower surface of the subject, the contact being inside of the outer circumferential portion of the subject to the center of the upper surface of the holder; and that the holder has a supporting portion, which supports the subject such that a predetermined interval is maintained between the upper surface of the holder and the lower surface of the subject. In the manufacture of the compound semiconductor using the MOCVD method, temperature distribution on the substrate surface to be deposited with a compound semiconductor crystal, and deviation of in-plane averaged light emission wavelength from a target value are suppressed using the apparatus.
摘要翻译：提供一种使用金属有机化学气相沉积法形成化合物半导体层的化合物半导体的制造装置。该装置的特征在于：该装置设置有反应容器，保持器，其设置在反应容器中并且放置在其上将要形成该层的被摄体，被摄体具有面向对象表面以及将来自外部的化合物半导体的原料气体从该原料供给口供给反应容器的内部的原料供给口，所述保持器与所述被检体的下表面接触，所述接触部位于所述被检体的外周部分的内侧到所述保持器的上表面的中心; 并且保持器具有支撑部分，该支撑部分支撑受试者，使得在保持器的上表面和被检体的下表面之间保持预定的间隔。在使用MOCVD法的化合物半导体的制造中，使用该装置抑制了使用化合物半导体晶体沉积的衬底表面上的温度分布和面内平均发光波长与目标值的偏差。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式