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1. 发明授权

US07679194B2 Method of fabricating semiconductor memory device and semiconductor memory device driver 失效
标题翻译：制造半导体存储器件和半导体存储器件驱动器的方法
公开(公告)号：US07679194B2
公开(公告)日：2010-03-16
申请号：US11783468
申请日：2007-04-10
申请人： Tatsuya Hashimoto , Toshiyuki Maenosono , Taji Togawa , Takayuki Enda , Hideo Takagi
发明人： Tatsuya Hashimoto , Toshiyuki Maenosono , Taji Togawa , Takayuki Enda , Hideo Takagi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译：公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连在电荷存储部分中。在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。

2. 发明申请

US20070262374A1 Semiconductor memory device and manufacturing method thereof 有权
公开(公告)号：US20070262374A1
公开(公告)日：2007-11-15
申请号：US11878296
申请日：2007-07-23
申请人： Masahiko Higashi , Manabu Nakamura , Kentaro Sera , Hiroyuki Nansei , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
发明人： Masahiko Higashi , Manabu Nakamura , Kentaro Sera , Hiroyuki Nansei , Yukihiro Utsuno , Hideo Takagi , Tatsuya Kajita
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L21/0217 , H01L21/022 , H01L21/02252 , H01L21/28282 , H01L21/31155 , H01L21/3185 , H01L27/105 , H01L27/11568 , H01L27/11573 , H01L29/66833
摘要： After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

3. 发明授权

US06766234B2 Occupant restraint system and occupant restraint method 失效
标题翻译：乘员约束系统和乘员约束方法
公开(公告)号：US06766234B2
公开(公告)日：2004-07-20
申请号：US10316825
申请日：2002-12-12
申请人： Hideo Takagi , Hiromichi Ikumo
发明人： Hideo Takagi , Hiromichi Ikumo
IPC分类号： B60R2200
CPC分类号： B60R21/0132 , B60R2021/01272 , B60R2022/4666
摘要： An occupant restraint system comprises a seat belt tension application device; a longitudinal acceleration detector; a lateral acceleration detector; and a control device that controls the tension applied by the seat belt tension application device based upon a longitudinal acceleration detection value and a lateral acceleration detection value and the control device engages the seat belt tension application device to apply the tension to the seat belt if a point on the map determined in conformance to the longitudinal acceleration detection value and the lateral acceleration detection value obtained as the vehicle decelerates is outside a range enclosed by the operation decision-making threshold line and the other axis.
摘要翻译：乘员约束系统包括安全带张力施加装置; 纵向加速度检测器; 横向加速度检测器; 以及控制装置，其基于纵向加速度检测值和横向加速度检测值来控制由所述安全带张力施加装置施加的张力，并且所述控制装置与所述安全带张紧施加装置接合以将张力施加到所述安全带，如果根据纵向加速度检测值确定的地图和作为车辆减速度获得的横向加速度检测值在由操作决策阈值线和另一轴所包围的范围之外。

4. 发明授权

US06197646B1 Manufacture of semiconductor device with salicide electrode 失效
标题翻译：制造具有自杀电极的半导体器件
公开(公告)号：US06197646B1
公开(公告)日：2001-03-06
申请号：US08693635
申请日：1996-08-09
申请人： Kenichi Goto , Atsuo Fushida , Tatsuya Yamazaki , Yuzuru Ota , Hideo Takagi , Keisuke Okazaki
发明人： Kenichi Goto , Atsuo Fushida , Tatsuya Yamazaki , Yuzuru Ota , Hideo Takagi , Keisuke Okazaki
IPC分类号： H01L21336
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518 , H01L27/1104 , H01L29/456 , H01L29/4933 , H01L29/7846
摘要： A method of manufacturing a semiconductor device with a silicide electrode is provided which can form a good contact even at a scaled-down pattern. The method includes the steps of: forming an insulated gate structure with side wall spacer on a p-type region of a silicon (Si) substrate; implanting arsenic ions in source/drain regions at a dose less than 5×1015 cm−2; forming a laminated layer of a Co film and a TiN film on the surface of the substrate; heating the substrate to let the Co film react with an underlying Si region for silicidation; and removing the TiN film. Another method includes the steps of: forming a field oxide film on the surface of a silicon (Si) substrate for element isolation; implanting ions in the surface region of the Si substrate defined by the field oxide film to form a conductive silicon region; depositing a Co film on the Si surface extending to the field oxide film; heating the Si substrate under such conditions of a time and a temperature that does not allow CoSi2 to be formed, and lets the Co film react with the conductive silicon region for silicidation, thereby forming Co silicide; removing an unreacted Co film; and subjecting the Si substrate to another heat treatment to convert the Co silicide to CoSi2.
摘要翻译：提供一种制造具有硅化物电极的半导体器件的方法，即使按比例缩小的图案也能形成良好的接触。该方法包括以下步骤：在硅（Si）衬底的p型区域上形成具有侧壁间隔物的绝缘栅结构; 以小于5×10 15 cm -2的剂量将砷离子注入源/漏区; 在所述基板的表面上形成Co膜和TiN膜的层叠层; 加热衬底以使Co膜与下面的Si区域反应以进行硅化; 并除去TiN膜。另一种方法包括以下步骤：在用于元件分离的硅（Si）衬底的表面上形成场氧化膜; 在由场氧化膜限定的Si衬底的表面区域中注入离子以形成导电硅区; 在延伸到场氧化膜的Si表面上沉积Co膜; 在不能形成CoSi 2的时间和温度的条件下加热Si衬底，并使Co膜与导电硅区域反应硅化，从而形成Co硅化物; 去除未反应的Co膜; 并对Si衬底进行另一次热处理以将Co硅化物转化为CoSi 2。

5. 发明授权

US5236869A Method of producing semiconductor device 失效
标题翻译：生产半导体器件的方法
公开(公告)号：US5236869A
公开(公告)日：1993-08-17
申请号：US833003
申请日：1992-02-10
申请人： Hideo Takagi , Akihiro Yoshida
发明人： Hideo Takagi , Akihiro Yoshida
IPC分类号： H01L21/28 , H01L21/283 , H01L21/285 , H01L21/318 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532
CPC分类号： H01L21/2855 , H01L21/321 , H01L23/53223 , H01L2924/0002 , Y10S148/147
摘要： The surface of a barrier layer interposed between a silicon substrate and aluminum wiring connected thereto is oxidized by heat treatment at 350.degree. to 450.degree. C. in an atmosphere having substantially the same composition as that of air or immersion in an oxidizing chemical to form an oxide film on the surface, and a wiring layer is then formed thereon. The presence of the oxide film inhibits interdiffusion between the silicon substrate and the aluminum wiring and reaction between the aluminum wiring and the barrier layer. Since this oxide film is formed by oxidation at the atmospheric pressure, the oxide film is not excessively oxidized even if it is exposed in air at a relatively high temperature of about 300.degree. C. The oxide film having a thickness and properties which produce the tunnel effect can be formed with good reproducibility.

6. 发明授权

US5072282A Multi-layer wirings on a semiconductor device and fabrication method 失效
标题翻译：半导体器件和制造方法上的多层布线
公开(公告)号：US5072282A
公开(公告)日：1991-12-10
申请号：US565866
申请日：1990-08-10
申请人： Hideo Takagi , Noriyuki Suzuki
发明人： Hideo Takagi , Noriyuki Suzuki
IPC分类号： H01L21/311 , H01L21/3205 , H01L21/3213 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532
CPC分类号： H01L21/32134 , H01L21/31111 , H01L21/76802 , H01L21/76838 , H01L23/5226 , H01L23/53257 , H01L23/53271 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/24917
摘要： A first layer-wiring formed of a material soluble in a solution containing hydrofluoric acid (HF) is protected in an insulating layer. A second layer-wiring insulatingly overlying the first layer is connected with the first layer-wiring via a third layer-wiring which is resistant to a solution containing HF. When contact holes are opened through the insulating layer so as to lead out the first layer-wiring and/or a part of the semiconductor substrate, the first layer-wiring is not exposed to HF containing solution for cleaning the exposed materials in the opened holes. Accordingly, a material having small electrical conductivity but soluble by the HF can be employed for the layer-wiring allowing a high density integration as well good electrical contact with the Si substrate and with other multi-layer wirings.

7. 发明授权

US4326881A Phenylpyrol derivatives 失效
标题翻译：苯基苯酚衍生物
公开(公告)号：US4326881A
公开(公告)日：1982-04-27
申请号：US970153
申请日：1978-12-18
申请人： Akiyoshi Ueda , Hideo Takagi , Kazuhiko Ohkuma
发明人： Akiyoshi Ueda , Hideo Takagi , Kazuhiko Ohkuma
IPC分类号： A01N43/36 , C07D207/34 , C07D207/323
CPC分类号： C07D207/34 , A01N43/36
摘要： Compounds of the general formula ##STR1## wherein Xn is 2-Cl, 3-Cl, 2,3-Cl.sub.2 or 3-CF.sub.3, andR is hydrogen or acetyl,with the proviso that Xn is 2,3-Cl.sub.2 in the case of R being hydrogen, are outstanding effective fungicides.
摘要翻译：其中Xn为2-Cl，3-Cl，2,3-Cl2或3-CF3的通式为“IMAGE”的化合物，R为氢或乙酰基，条件是Xn为2,3-Cl2 的R是氢，是杰出的有效杀真菌剂。

8. 发明申请

US20090034950A1 IMAGE-BLUR COMPENSATING DEVICE AND IMAGE PICKUP APPARATUS 有权
标题翻译：图像融合装置和图像拾取装置
公开(公告)号：US20090034950A1
公开(公告)日：2009-02-05
申请号：US12141355
申请日：2008-06-18
申请人： Hideo Takagi , Tatsuyuki Takahashi , Toshifumi Takaoka , Tomoya Takei
发明人： Hideo Takagi , Tatsuyuki Takahashi , Toshifumi Takaoka , Tomoya Takei
IPC分类号： G03B17/00
CPC分类号： G03B17/00 , H04N5/23248 , H04N5/23258 , H04N5/23287
摘要： Disclosed is an image-blur compensating device including an optical axis changing unit changing an optical axis, an actuator driving the optical axis changing unit, a displacement detector detecting a position of the optical axis changed by the optical axis changing unit, an angular velocity detector detecting an angular velocity applied from outside, and a target displacement calculator calculating a driving amount when the actuator has driven the optical axis changing unit based on the angular velocity detected by the angular velocity detector and the position detected by the displacement detector. The target displacement calculator then obtains, as a result of compensating an amount of influence on the position of the optical axis, a driving amount when driving the actuator based on the calculated driving amount. The image-blur compensating device further includes a driver driving the actuator based on the driving amount calculated by the target displacement calculator.
摘要翻译：公开了一种图像模糊补偿装置，包括：改变光轴的光轴改变单元，驱动光轴改变单元的致动器;检测由光轴改变单元改变的光轴的位置的位移检测器;角速度检测器检测从外部施加的角速度，以及目标位移计算器，其计算当所述致动器基于由所述角速度检测器检测的角速度和所述位移检测器检测到的位置而驱动所述光轴改变单元时的驱动量。因此，目标位移计算器作为补偿对光轴的位置的影响量的结果，获得基于计算出的驱动量来驱动致动器的驱动量。图像模糊补偿装置还包括基于由目标位移计算器计算的驾驶量来驱动致动器的驾驶员。

9. 发明授权

US07453116B2 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07453116B2
公开(公告)日：2008-11-18
申请号：US11368678
申请日：2006-03-07
申请人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
发明人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573
摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
摘要翻译：在半导体衬底上形成用于存储电荷的氮化硅膜，同时在其间放置隧道氧化物膜，然后对氮化硅膜进行氢等离子体处理，以便在制造的各个工艺步骤期间有效地擦除不存在的电荷。从而稳定半导体存储器件的阈值电压（V SUB）。

10. 发明申请

US20070273364A1 Lens Position Detector, Lens Barrel and Imaging device 失效
标题翻译：镜头位置检测器，镜筒和成像装置
公开(公告)号：US20070273364A1
公开(公告)日：2007-11-29
申请号：US10576097
申请日：2005-08-18
申请人： Tomoya Takei , Toshifumi Takaoka , Hideo Takagi , Yoshikazu Ito , Masanori Hayashi , Tomohiro Yasui , Hideki Yamaoka , Kentaro Tashita
发明人： Tomoya Takei , Toshifumi Takaoka , Hideo Takagi , Yoshikazu Ito , Masanori Hayashi , Tomohiro Yasui , Hideki Yamaoka , Kentaro Tashita
IPC分类号： G02B7/04 , G01B7/14
CPC分类号： G02B7/102 , G03B17/04 , H04N2101/00
摘要： A lens position detecting device 200 has a position detecting magnet 202, a magnetic force detecting sensor 204, a positional information generating means 206, etc. The position detecting magnet 202 is mounted on a rear surface of a lens holder frame 1460. The magnetic force detecting sensor 204 serves to generate a detected signal having a magnitude depending on the intensity of a magnetic force generated from the magnetic poles of the position detecting magnet 202. The magnetic force detecting sensor 204 is disposed on a straight line that passes through the position detecting magnet 202 parallel to the optical axis. The magnetic force detecting sensor 204 outputs a detected signal having a voltage corresponding (proportional) to the intensity of the magnetic force. An amplifying circuit 208 of a positional information generating means 206 amplifies the detected signal Ss from the magnetic force detecting sensor 204.
摘要翻译：透镜位置检测装置200具有位置检测磁铁202，磁力检测传感器204，位置信息生成装置206等。位置检测用磁铁202安装在透镜架框架1460的背面。磁力检测传感器204用于产生具有取决于从位置检测磁体202的磁极产生的磁力的强度的检测信号。磁力检测传感器204设置在通过位置检测的直线上磁体202平行于光轴。磁力检测传感器204输出具有与磁力的强度对应（成比例）的电压的检测信号。位置信息生成装置206的放大电路208从磁力检测传感器204放大检测信号Ss。

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