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1. 发明授权

US10199240B2 Substrate processing method, substrate processing apparatus, and storage medium 有权
公开(公告)号：US10199240B2
公开(公告)日：2019-02-05
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： H01L21/67 , H01L21/02 , B08B7/00
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

2. 发明授权

US09126229B2 Deposit removal method 有权
标题翻译：存款清除方法
公开(公告)号：US09126229B2
公开(公告)日：2015-09-08
申请号：US14116952
申请日：2012-05-10
申请人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
发明人： Shigeru Tahara , Eiichi Nishimura , Hiroshi Tomita , Tokuhisa Ohiwa , Hisashi Okuchi , Mitsuhiro Omura
IPC分类号： B05D3/14 , H01L21/02 , H01L21/311
CPC分类号： B05D3/145 , H01L21/02057 , H01L21/02063 , H01L21/31116
摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.
摘要翻译：通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理处理，重复第一周期和第二周期的多个周期。在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

3. 发明授权

US08772164B2 Method for forming interconnection pattern and semiconductor device 有权
标题翻译：形成互连图案和半导体器件的方法
公开(公告)号：US08772164B2
公开(公告)日：2014-07-08
申请号：US13526216
申请日：2012-06-18
申请人： Yasuhito Yoshimizu , Satoshi Wakatsuki , Hisashi Okuchi , Atsuko Sakata , Hiroshi Tomita
发明人： Yasuhito Yoshimizu , Satoshi Wakatsuki , Hisashi Okuchi , Atsuko Sakata , Hiroshi Tomita
IPC分类号： H01L21/44
CPC分类号： C23C18/1608 , C23C18/1893 , C23C18/32 , H01L21/4846 , H01L21/76874 , H01L21/76879 , H01L21/76885 , H01L28/91
摘要： According to one embodiment, a method for forming an interconnection pattern includes forming an insulating pattern, forming a self-assembled film, and forming a conductive layer. The insulating pattern has a side surface on a major surface of a matrix. The self-assembled film has an affinity with a material of the insulating pattern on the side surface of the insulating pattern. The forming the conductive layer includes depositing a conductive material on a side surface of the self-assembled film.
摘要翻译：根据一个实施例，用于形成互连图案的方法包括形成绝缘图案，形成自组装膜并形成导电层。绝缘图案在矩阵的主表面上具有侧表面。自组装膜与绝缘图案的侧面上的绝缘图案的材料具有亲和性。形成导电层包括在自组装膜的侧表面上沉积导电材料。

4. 发明申请

US20130068257A1 METHOD AND DEVICE FOR CLEANING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于清洁半导体衬底的方法和装置
公开(公告)号：US20130068257A1
公开(公告)日：2013-03-21
申请号：US13423583
申请日：2012-03-19
申请人： Hiroshi TOMITA , Minako Inukai , Hiaashi Okuchi , Linan Ji
发明人： Hiroshi TOMITA , Minako Inukai , Hiaashi Okuchi , Linan Ji
IPC分类号： B08B3/10 , B08B7/04 , B08B3/04
CPC分类号： H01L21/67005 , H01L21/02057 , H01L21/67028
摘要： According to one embodiment, a method for cleaning a semiconductor substrate comprises supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, cooling the semiconductor substrate after stopping the heating and the supply of the water vapor and freezing water on the semiconductor substrate, after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film, and after melting the frozen film, drying the semiconductor substrate.
摘要翻译：根据一个实施例，一种用于清洁半导体衬底的方法包括：在预定温度下对半导体衬底加热的同时，在形成有凹凸图案的半导体衬底的表面上提供水蒸气，在停止加热后冷却半导体衬底以及在半导体衬底上的水蒸气和冷冻水的供应，在冷冻水之后，将纯水供应到半导体衬底上并熔化冷冻的膜，并且在熔化冷冻膜之后干燥半导体衬底。

5. 发明授权

US08375964B2 Template cleaning method, system, and apparatus 有权
标题翻译：模板清洗方法，系统和装置
公开(公告)号：US08375964B2
公开(公告)日：2013-02-19
申请号：US12560210
申请日：2009-09-15
申请人： Hiroshi Tomita , Hisashi Okuchi , Minako Inukai
发明人： Hiroshi Tomita , Hisashi Okuchi , Minako Inukai
IPC分类号： B08B3/02
CPC分类号： B08B3/08 , B08B13/00 , H01L21/67051 , H01L21/67748 , H01L21/68707 , H01L21/68728
摘要： A template cleaning method for cleaning a template for nanoimprint, according to an embodiment of the present invention includes placing a wafer on a stage provided in a chamber, cleaning the wafer placed on the stage, inspecting the wafer for particles after the cleaning of the wafer, placing the template on the stage after the inspection of the wafer, and cleaning the template placed on the stage.
摘要翻译：根据本发明的实施例的用于清洁纳米压印模板的模板清洁方法包括将晶片放置在设置在室中的台上，清洁放置在台上的晶片，在晶片清洁之后检查晶片的颗粒，在检查晶片后将模板放置在平台上，并清洁放置在平台上的模板。

6. 发明申请

US20130019905A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS 有权
标题翻译：半导体基板和超临界干燥装置的超临界干燥方法
公开(公告)号：US20130019905A1
公开(公告)日：2013-01-24
申请号：US13420870
申请日：2012-03-15
申请人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B3/10 , F26B3/00
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

7. 发明申请

US20120304485A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理方法，基板处理装置和存储介质
公开(公告)号：US20120304485A1
公开(公告)日：2012-12-06
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： F26B7/00
CPC分类号： H01L21/67028 , B08B7/0021 , H01L21/02057 , H01L21/02101
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.
摘要翻译：一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷，将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。

8. 发明申请

US20120247516A1 SUPERCRITICAL DRYING METHOD AND APPARATUS FOR SEMICONDUCTOR SUBSTRATES 有权
标题翻译：超临界干燥方法和半导体基板的设备
公开(公告)号：US20120247516A1
公开(公告)日：2012-10-04
申请号：US13369970
申请日：2012-02-09
申请人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
发明人： Yohei SATO , Hisashi OKUCHI , Hiroshi TOMITA , Hidekazu HAYASHI , Yukiko KITAJIMA , Takayuki TOSHIMA , Mitsuaki IWASHITA , Kazuyuki MITSUOKA , Gen YOU , Hiroki OHNO , Takehiko ORII
IPC分类号： B08B3/00 , F26B25/14 , F26B25/06
CPC分类号： F26B3/02
摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.
摘要翻译：根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。房间包含SUS。对室的内壁面进行电解抛光。

9. 发明申请

US20120240426A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于半导体基板的超临界干燥方法
公开(公告)号：US20120240426A1
公开(公告)日：2012-09-27
申请号：US13231956
申请日：2011-09-13
申请人： Hidekazu HAYASHI , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
发明人： Hidekazu HAYASHI , Hiroshi Tomita , Yukiko Kitajima , Hisashi Okuchi , Yohei Sato
IPC分类号： F26B7/00 , F26B21/14
CPC分类号： H01L21/02101 , H01L21/02068 , H01L21/67017 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.
摘要翻译：根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中，在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力房间。预定温度不低于75℃，但低于醇的临界温度。

10. 发明授权

US08190363B2 Driving support system, driving support method and computer program for setting and using facility entry difficulty levels 有权
标题翻译：驾驶支持系统，驾驶支持方法和计算机程序，用于设置和使用设施进入难度级别
公开(公告)号：US08190363B2
公开(公告)日：2012-05-29
申请号：US12382227
申请日：2009-03-11
申请人： Hiroshi Tomita , Takahiro Miyachi
发明人： Hiroshi Tomita , Takahiro Miyachi
IPC分类号： G01C21/34
CPC分类号： G08G1/164 , G01C21/3461 , G01C21/3484
摘要： When a vehicle enters a facility off a road on which the vehicle is traveling, information pertaining to an entry direction into the facility is sent to a probe center as probe information, and a current driving level of the host vehicle is identified. Meanwhile, the probe center that received the probe information calculates a right-turn entry percentage for facilities based upon the received probe information, and sets an entry difficulty level of the facilities based upon the calculated right-turn entry percentage. A vehicle to which information pertaining to the entry difficulty level of a set facility was distributed from the probe center is structured so as to perform driving support based upon the information pertaining to the entry difficulty level of the facility.
摘要翻译：当车辆从车辆行驶的道路进入设施时，将关于进入设施的进入方向的信息作为探测信息发送到探测中心，并且识别本车辆的当前驾驶水平。同时，接收探测信息的探测中心根据接收到的探测信息计算设施的右转进入百分比，并根据计算出的右转进入百分比设定设备的入口难度等级。根据与设施的进入难易程度有关的信息，构成从探测中心分发与设定设施的进入难度等级有关的信息的车辆，以进行驾驶辅助。

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