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1. 发明授权

US09177947B2 Semiconductor device having efficient capacitor arrangement 有权
标题翻译：具有高效电容器布置的半导体器件
公开(公告)号：US09177947B2
公开(公告)日：2015-11-03
申请号：US12628474
申请日：2009-12-01
申请人： Hiroyuki Fujimoto
发明人： Hiroyuki Fujimoto
IPC分类号： H01L47/00 , H01L27/02 , H01L27/108 , H01L49/02 , H01L27/24 , H01L45/00
CPC分类号： H01L27/0207 , H01L27/10841 , H01L27/10852 , H01L27/2454 , H01L27/2463 , H01L28/91 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/147
摘要： The invention includes: multiple bit lines b1 to b5 arranged in parallel to each other at a first line pitch; multiple word lines w1 to w4 arranged in parallel to each other at a second line pitch greater than the first line pitch and intersecting with bit lines b1 to b5; and multiple capacitors. Respective center positions 4 of the multiple capacitors lie above the bit lines and are displaced by given distance C from the intersection of the bit line and the word line in a direction of arranging the word lines.
摘要翻译：本发明包括：以第一线间距彼此平行布置的多个位线b1至b5; 多个字线w1〜w4以大于第一线间距的第二线间距彼此平行布置并与位线b1至b5相交; 和多个电容器。多个电容器的相应中心位置4位于位线之上，并且在排列字线的方向上从位线和字线的交点偏移给定距离C.

2. 发明授权

US08017468B2 Semiconductor device manufacturing method, and semiconductor device 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US08017468B2
公开(公告)日：2011-09-13
申请号：US12349595
申请日：2009-01-07
申请人： Hiroyuki Fujimoto
发明人： Hiroyuki Fujimoto
IPC分类号： H01L21/22
CPC分类号： H01L29/7827 , H01L27/10876 , H01L29/66666
摘要： A method of manufacturing a semiconductor device in which the formation of buried wiring is facilitated includes: forming columnar patterns, which are arranged in a two-dimensional array, and bridge patterns, which connect the columnar patterns in a column direction, on a main surface of a silicon substrate; injecting an impurity in a surface portion of each of the columnar patterns and bridge patterns and in surface portions of the silicon substrate, thereby forming impurity injection layers; forming a side wall on sides of the columnar patterns and bridge patterns; removing the impurity injection layer, which has been formed in the silicon substrate, with the exception of the impurity injection layer covered by the bottom portions of the side walls; removing the side walls by etch-back; and thermally oxidizing the surface portion of the bridge patterns and then etching away the same. Buried wiring extending in the column direction of the columnar patterns is formed within the silicon substrate.
摘要翻译：制造掩埋布线形成的半导体器件的方法包括：形成以二维阵列布置的柱状图案和将柱状图案沿列方向连接在主表面上的桥接图案的硅衬底; 在每个柱状图案和桥接图案的表面部分和硅衬底的表面部分中注入杂质，从而形成杂质注入层; 在柱状图案和桥形图案的侧面上形成侧壁; 去除已经形成在硅衬底中的杂质注入层，除了由侧壁的底部覆盖的杂质注入层之外; 通过蚀刻去除侧壁; 并对桥状图案的表面部分进行热氧化，然后将其蚀刻掉。在硅衬底内形成在柱状图案的列方向上延伸的埋入布线。

3. 发明申请

US20110195309A1 NONAQUEOUS ELECTROLYTE SECONDARY BATTERY 审中-公开
标题翻译：非电解电解质二次电池
公开(公告)号：US20110195309A1
公开(公告)日：2011-08-11
申请号：US13023951
申请日：2011-02-09
申请人： Fumiharu Nina , Akihiro Suzuki , Shingo Tode , Toshikazu Yoshida , Yoshinori Kida , Hiroyuki Fujimoto
发明人： Fumiharu Nina , Akihiro Suzuki , Shingo Tode , Toshikazu Yoshida , Yoshinori Kida , Hiroyuki Fujimoto
IPC分类号： H01M4/52 , H01M4/50
CPC分类号： H01M10/0525 , H01M4/485 , H01M4/505 , H01M4/525 , Y02E60/122 , Y02T10/7011
摘要： A positive electrode active material of a nonaqueous electrolyte secondary battery is improved by using an inexpensive lithium transition metal oxide containing nickel and manganese as main components. Output characteristics of the battery under various temperature conditions are thereby improved, and the battery is suitable as a power supply of a hybrid vehicle. The battery includes a positive electrode including a positive electrode active material, a negative electrode including a negative electrode active material, and a nonaqueous electrolyte prepared by dissolving a solute in a nonaqueous solvent. The positive electrode active material includes positive electrode active material particles composed of a lithium transition metal complex oxide having a layered structure containing nickel and manganese as main components, and at least one niobium-containing material selected from a Li—Nb—O compound and a Li—Ni—Nb—O compound, the at least one niobium-containing material being sintered onto surfaces of the positive electrode active material particles.
摘要翻译：通过使用廉价的含有镍和锰的锂过渡金属氧化物作为主要成分，提高了非水电解质二次电池的正极活性物质。因此，在各种温度条件下的电池的输出特性得到改善，并且电池适合作为混合动力车辆的电源。该电池包括正极，其包括正极活性物质，负极包括负极活性物质，以及通过将溶质溶解在非水溶剂中制备的非水电解质。正极活性物质包括由具有镍和锰作为主要成分的层状结构的锂过渡金属复合氧化物构成的正极活性物质粒子，以及选自Li-Nb-O系化合物和 Li-Ni-Nb-O化合物，将至少一种含铌材料烧结在正极活性物质颗粒的表面上。

4. 发明申请

US20110094813A1 ALL TERRAIN VEHICLE 有权
标题翻译：全地形车
公开(公告)号：US20110094813A1
公开(公告)日：2011-04-28
申请号：US12604419
申请日：2009-10-23
申请人： Yasuhiro SUZUKI , Hiroyuki FUJIMOTO , Hikaru MORIYA , Satoshi KUBOTA
发明人： Yasuhiro SUZUKI , Hiroyuki FUJIMOTO , Hikaru MORIYA , Satoshi KUBOTA
IPC分类号： B60K13/04 , B60N2/427 , B62D25/06 , B60K5/00
CPC分类号： B62D21/183 , B60K5/04 , B60K11/04 , B60K13/02 , B60K13/04 , B60K17/34 , B60K2005/003 , B60Y2200/20
摘要： In an all terrain vehicle, an engine unit is at least partially disposed under a seat. An exhaust pipe includes a first portion, a second portion and a third portion. The first portion is connected to a rear surface of the engine unit, and extends rearward therefrom. The second portion is connected to the first portion, and has a U-shaped configuration. The third portion is connected to the second portion, and extends forward therefrom. A muffler is connected to the exhaust pipe. The muffler is arranged such that the first portion and the third portion at least partially overlap with an area located between two tangent lines of the muffler. The tangent lines of the muffler are perpendicular or substantially perpendicular to a tangent line shared by the first portion and the third portion.
摘要翻译：在全地形车辆中，发动机单元至少部分地设置在座椅下方。排气管包括第一部分，第二部分和第三部分。第一部分连接到发动机单元的后表面并从其向后延伸。第二部分连接到第一部分，并且具有U形构造。第三部分连接到第二部分并从其向前延伸。消声器连接到排气管。消音器布置成使得第一部分和第三部分至少部分地与位于消音器的两条切线之间的区域重叠。消声器的切线垂直于或基本上垂直于由第一部分和第三部分共享的切线。

5. 发明授权

US07833867B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07833867B2
公开(公告)日：2010-11-16
申请号：US12292008
申请日：2008-11-10
申请人： Hiroyuki Fujimoto
发明人： Hiroyuki Fujimoto
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L21/823431 , H01L21/823437 , H01L29/66818
摘要： A sacrifice oxide film is formed in a Fin semiconductor substrate portion, and impurities are then implanted in the semiconductor substrate through a mask pattern as a mask. Thereafter, the sacrifice oxide film is removed to expose the semiconductor substrate. A gate insulating film is then formed on the exposed semiconductor substrate.
摘要翻译：在Fin半导体衬底部分中形成牺牲氧化物膜，然后通过掩模图案作为掩模将杂质注入到半导体衬底中。此后，去除牺牲氧化物膜以露出半导体衬底。然后在暴露的半导体衬底上形成栅极绝缘膜。

6. 发明申请

US20100262347A1 VEHICLE 有权
标题翻译：车辆
公开(公告)号：US20100262347A1
公开(公告)日：2010-10-14
申请号：US12758075
申请日：2010-04-12
申请人： Naoki MUROTA , Hiroyuki FUJIMOTO , Hiroshi KAWAMURA
发明人： Naoki MUROTA , Hiroyuki FUJIMOTO , Hiroshi KAWAMURA
IPC分类号： G06F19/00
CPC分类号： B60K23/04 , B60K23/08 , B60K35/00 , B60K37/06 , B60K2350/102 , B60K2350/1024 , B60K2350/35
摘要： A vehicle can be operated in a first drive mode in which a front differential is set to a non-driven state and a rear differential is set to a differential state, a second drive mode in which the front differential is set to a non-driven state and the rear differential is set to a differential locked state, a third drive mode in which the front differential is set to a differential state and the rear differential is set to a differential locked state, and a fourth drive mode in which the front differential is set to a differential locked state and the rear differential is set to a differential locked state. Transition is allowed only between adjacent drive modes.
摘要翻译：车辆可以在其中前差速器被设定为非驱动状态并且后差速器被设定为差速状态的第一驱动模式中操作，第二驱动模式将前差速器设定为非驱动并且后差速器被设定为差速锁定状态，其中前差速器被设置为差速状态并且后差速器被设置为差速锁定状态的第三驱动模式，以及第四驱动模式，其中前差速器设定为差速锁定状态，后差速器被设定为差动锁定状态。仅在相邻驱动模式之间才允许转换。

7. 发明申请

US20100178563A1 COMPOSITE NEGATIVE ELECTRODE ACTIVE MATERIAL AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY 有权
标题翻译：复合负极电极活性材料和非水电解质二次电池
公开(公告)号：US20100178563A1
公开(公告)日：2010-07-15
申请号：US12602560
申请日：2008-06-02
申请人： Yoshiyuki Ozaki , Hiroyuki Fujimoto
发明人： Yoshiyuki Ozaki , Hiroyuki Fujimoto
IPC分类号： H01M4/583
CPC分类号： H01M4/587
摘要： Disclosed is a composite negative electrode active material including a graphitizable carbon material containing a layered structure formed of stacked carbon layers partially having a three-dimensional regularity, and a low crystalline carbon material. A negative electrode including the composite negative electrode active material is used to produce a non-aqueous electrolyte secondary battery. The non-aqueous electrolyte secondary battery thus produced has a high energy density and demonstrates a high output/input performance for a long period of time in various environments of high to low temperatures.
摘要翻译：公开了一种复合负极活性物质，其包含含有部分具有三维规则性的堆叠碳层形成的层状结构的石墨化碳材料和低结晶性碳材料。使用包含复合负极活性物质的负极来制造非水电解质二次电池。由此制造的非水电解质二次电池具有高能量密度，并且在高低温的各种环境中长时间表现出高的输出/输入性能。

8. 发明申请

US20100133497A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100133497A1
公开(公告)日：2010-06-03
申请号：US12628474
申请日：2009-12-01
申请人： Hiroyuki Fujimoto
发明人： Hiroyuki Fujimoto
IPC分类号： H01L47/00 , H01L29/92 , H01L27/06 , H01L21/02 , H01L21/336
CPC分类号： H01L27/0207 , H01L27/10841 , H01L27/10852 , H01L27/2454 , H01L27/2463 , H01L28/91 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/147
摘要： The invention includes: multiple bit lines b1 to b5 arranged in parallel to each other at a first line pitch; multiple word lines w1 to w4 arranged in parallel to each other at a second line pitch greater than the first line pitch and intersecting with bit lines b1 to b5; and multiple capacitors. Respective center positions 4 of the multiple capacitors lie above the bit lines and are displaced by given distance C from the intersection of the bit line and the word line in a direction of arranging the word lines.
摘要翻译：本发明包括：以第一线间距彼此平行布置的多个位线b1至b5; 多个字线w1〜w4以大于第一线间距的第二线间距彼此平行布置并与位线b1至b5相交; 和多个电容器。多个电容器的相应中心位置4位于位线之上，并且在排列字线的方向上从位线和字线的交点偏移给定距离C.

9. 发明申请

US20090261408A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20090261408A1
公开(公告)日：2009-10-22
申请号：US12426488
申请日：2009-04-20
申请人： Hiroyuki FUJIMOTO
发明人： Hiroyuki FUJIMOTO
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66666 , H01L21/76897 , H01L27/24 , H01L29/7827
摘要： A semiconductor device includes a semiconductor substrate, a first diffusion region, a gate insulating film, a gate electrode, a second diffusion region and a contact plug. The semiconductor substrate includes a base and at least a pillar. The first diffusion region is disposed in the base. The gate insulating film covers a side surface of the pillar. The gate electrode is separated from the pillar by the gate insulating film. The second diffusion region is disposed in an upper portion of the pillar. The contact plug is connected to the second diffusion region. The contact plug is connected to the entirety of the top surface of the pillar.
摘要翻译：半导体器件包括半导体衬底，第一扩散区，栅绝缘膜，栅电极，第二扩散区和接触插塞。半导体衬底包括基底和至少一个支柱。第一扩散区域设置在基底中。栅极绝缘膜覆盖支柱的侧表面。栅极通过栅极绝缘膜与柱分离。第二扩散区域设置在柱的上部。接触塞连接到第二扩散区。接触塞连接到柱的整个顶表面。

10. 发明申请

US20090184367A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20090184367A1
公开(公告)日：2009-07-23
申请号：US12349595
申请日：2009-01-07
申请人： Hiroyuki FUJIMOTO
发明人： Hiroyuki FUJIMOTO
IPC分类号： H01L27/088 , H01L21/22
CPC分类号： H01L29/7827 , H01L27/10876 , H01L29/66666
摘要： A method of manufacturing a semiconductor device in which the formation of buried wiring is facilitated includes: forming columnar patterns, which are arranged in a two-dimensional array, and bridge patterns, which connect the columnar patterns in a column direction, on a main surface of a silicon substrate; injecting an impurity in a surface portion of each of the columnar patterns and bridge patterns and in surface portions of the silicon substrate, thereby forming impurity injection layers; forming a side wall on sides of the columnar patterns and bridge patterns; removing the impurity injection layer, which has been formed in the silicon substrate, with the exception of the impurity injection layer covered by the bottom portions of the side walls; removing the side walls by etch-back; and thermally oxidizing the surface portion of the bridge patterns and then etching away the same. Buried wiring extending in the column direction of the columnar patterns is formed within the silicon substrate.
摘要翻译：制造掩埋布线形成的半导体器件的方法包括：形成以二维阵列布置的柱状图案和将柱状图案沿列方向连接在主表面上的桥接图案的硅衬底; 在每个柱状图案和桥接图案的表面部分和硅衬底的表面部分中注入杂质，从而形成杂质注入层; 在柱状图案和桥形图案的侧面上形成侧壁; 去除已经形成在硅衬底中的杂质注入层，除了由侧壁的底部覆盖的杂质注入层之外; 通过蚀刻去除侧壁; 并对桥状图案的表面部分进行热氧化，然后将其蚀刻掉。在硅衬底内形成在柱状图案的列方向上延伸的埋入布线。

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