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    • 6. 发明申请
    • METHOD FOR MANUFACTURING SOLAR CELL
    • 制造太阳能电池的方法
    • US20130029450A1
    • 2013-01-31
    • US13641190
    • 2011-04-19
    • Chae Hwan JeongJong Ho LeeHo Sung KimJin Hyeok KimSuk Ho Lee
    • Chae Hwan JeongJong Ho LeeHo Sung KimJin Hyeok KimSuk Ho Lee
    • H01L31/18
    • H01L31/0326H01L31/022425H01L31/0322H01L31/03923H01L31/0749H01L31/1872Y02E10/541Y02P70/521
    • The present invention provides a method for manufacturing a solar cell capable of suppressing volatilization of selenium and deformation of a substrate during a manufacturing process. According to the present invention, the method for manufacturing the solar cell comprises the steps of: providing a substrate; forming a rear electrode on the substrate; forming a precursor film for a light absorption film on the rear electrode; forming a light absorption film by progressing a crystallization process for the precursor film for the light absorption film; forming a buffer film on the light absorption film; forming a window film on the buffer film, and forming an anti-reflection film on the window film; and partially patterning the anti-reflection film, and forming a grid electrode in a patterned area. Said precursor film for the light absorption film includes Cu—Zn—Sn—S (Cu2ZnSnS4), CuInSe2, CuInS2, Cu(InGa)Se2, or Cu(InGa)S2. Further, a Cu—Zn—Sn—S (Cu2ZnSnS4) precursor film, a CuInSe2 precursor film, a CuInS2 precursor film, and a Cu (InGa)Se2 precursor film or a Cu(InGa)S2 precursor film can have a multi-layer structure of each component or a single-layer structure having compounds of the components. Said crystallization step for the precursor film is progressed through an electron-beam irradiation process.
    • 本发明提供一种制造太阳能电池的方法,所述太阳能电池能够在制造过程中抑制硒的挥发和基板的变形。 根据本发明,太阳能电池的制造方法包括以下步骤:提供基板; 在所述基板上形成后电极; 在后电极上形成用于光吸收膜的前体膜; 通过对用于光吸收膜的前体膜进行结晶化处理来形成光吸收膜; 在光吸收膜上形成缓冲膜; 在缓冲膜上形成窗膜,在窗膜上形成防反射膜; 并且部分地构图防反射膜,并且在图案化区域中形成栅格电极。 所述光吸收膜前体膜包括Cu-Zn-Sn-S(Cu2ZnSnS4),CuInSe2,CuInS2,Cu(InGa)Se2或Cu(InGa)S2。 此外,Cu-Zn-Sn-S(Cu2ZnSnS4)前体膜,CuInSe2前体膜,CuInS2前体膜和Cu(InGa)Se2前体膜或Cu(InGa)S2前体膜可以具有多层 每个组分的结构或具有组分化合物的单层结构。 前体膜的所述结晶步骤通过电子束照射工艺进行。
    • 8. 发明授权
    • Systems and methods for a SPDT switch or SPMT switch with transformer
    • 具有变压器的SPDT开关或SPMT开关的系统和方法
    • US08044540B2
    • 2011-10-25
    • US12565137
    • 2009-09-23
    • Dong Ho LeeMinsik AhnKyu Hwan AnWangmyong WooChang-Ho LeeJoy Laskar
    • Dong Ho LeeMinsik AhnKyu Hwan AnWangmyong WooChang-Ho LeeJoy Laskar
    • H01H31/10
    • H03K17/693Y10T307/76
    • A SPDT or SPMT switch may include a transformer having a primary winding and a secondary winding, where a first end of the secondary winding is connected to a single pole port, where a first end of the primary winding is connected to a first throw port; a first switch having a first end and a second end, where the first end is connected to ground; and a second switch, where a second end of the secondary winding is connected to both a second end of the first switch and a first end of the second switch, where a second end of the second switch is connected to a second throw port, where the first switch controls a first communication path between the single pole port and the first throw port, and where the second switch controls a second communication path between the second throw port and the single pole port.
    • SPDT或SPMT开关可以包括具有初级绕组和次级绕组的变压器,其中次级绕组的第一端连接到单极端口,其中初级绕组的第一端连接到第一端口; 第一开关,其具有第一端和第二端,其中第一端连接到地; 以及第二开关,其中所述次级绕组的第二端连接到所述第一开关的第二端和所述第二开关的第一端,其中所述第二开关的第二端连接到第二突出端口,其中 第一开关控制单极端口和第一端口之间的第一通信路径,并且其中第二开关控制第二端口和单极端口之间的第二通信路径。
    • 9. 发明授权
    • Nonvolatile memory devices and methods of forming the same
    • 非易失存储器件及其形成方法
    • US07920418B2
    • 2011-04-05
    • US11972243
    • 2008-01-10
    • Seung-Chul LeeKeun-Ho LeeChoong-Ho LeeByung-Yong Choi
    • Seung-Chul LeeKeun-Ho LeeChoong-Ho LeeByung-Yong Choi
    • G11C11/34
    • H01L27/11521G11C16/0483G11C16/3418H01L27/115H01L27/11524
    • A nonvolatile memory device includes a semiconductor substrate of a first conductivity type, a plurality of word lines on the semiconductor substrate, each the plurality of word lines including a floating gate of a second conductivity type. A ground select line and a string select line are disposed on respective sides of word lines. An impurity region of the second conductivity type underlies a first word line adjacent the ground select line. The device may further include a second impurity region of the second conductivity type underlying a second word line adjacent the string select line. In still further embodiments, the device may further include third impurity regions of the second conductivity type underlying respective third word lines between the first word line and the second word line. Methods of forming such devices are also provided.
    • 非易失性存储器件包括第一导电类型的半导体衬底,半导体衬底上的多个字线,多条字线包括第二导电类型的浮置栅极。 地线选择线和串选择线设置在字线的相应侧上。 第二导电类型的杂质区域位于与地选线相邻的第一字线的正下方。 该器件还可以包括第二导电类型的第二杂质区域,位于与串选择线相邻的第二字线下方。 在另外的实施例中,器件还可以包括在第一字线和第二字线之间的相应第三字线下方的第二导电类型的第三杂质区。 还提供了形成这种装置的方法。