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    • 7. 发明申请
    • PROCESS FOR MAKING AN IRIDIUM LAYER
    • 制备IRIIUM层的工艺
    • US20160340792A1
    • 2016-11-24
    • US15146888
    • 2016-05-04
    • SANG HYUN AHNNATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
    • THOMAS P. MOFFATYIHUA LIUSANG HYUN AHN
    • C25D21/12C25D3/50C25D5/10H01L21/288
    • C25D21/12C25B1/02C25D3/50C25D5/10C25D5/18C25D7/123H01L21/2885H01M4/8853H01M4/925H01M4/94
    • A process for depositing a plurality of layers of iridium on a substrate includes: contacting the substrate with an electrolyte composition including: iridium cations protons; biasing the substrate at a first potential; forming iridium on the substrate at the first potential of the substrate; disposing hydrogen on the substrate; self-terminating the forming of iridium on the substrate in response to increasing a coverage of hydrogen on the substrate; oxidizing hydrogen on the substrate by changing a potential of the substrate from the first potential to a second potential; and changing the potential of the substrate from the second potential to a third potential for forming additional iridium on the substrate to deposit a plurality of layers of iridium on the substrate, such that forming the additional iridium on the substrate occurs at the third potential in response to oxidizing the hydrogen on the substrate at the second potential.
    • 用于在衬底上沉积多层铱的方法包括:使基底与电解质组合物接触,所述电解质组合物包括:铱阳离子质子; 将衬底偏置在第一电位; 在基板的第一电位处形成铱; 在基板上设置氢; 响应于增加衬底上的氢的覆盖而自身终止在衬底上形成铱; 通过将衬底的电位从第一电位改变到第二电位来在衬底上氧化氢; 并且将衬底从第二电位的电位改变到用于在衬底上形成额外的铱的第三电位,以在衬底上沉积多个铱层,使得在衬底上形成附加的铱响应于第三个电位 以在第二电位下氧化衬底上的氢。