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    • 6. 发明申请
    • SCRUBBER SYSTEM WITH DIFFRACTION PLATE ADAPTED FOR SWIRL BUBBLE GENERATION FOR EFFECTIVE REMOVAL OF POLLUTANTS
    • US20180361303A1
    • 2018-12-20
    • US15668106
    • 2017-08-03
    • Seung Uk ChoiHyun Jun ChoiKumho Environment Co., Ltd.
    • Seung Uk CHOIHyun Jun CHOI
    • B01D47/02B01D47/10B01D47/14
    • A scrubber system for removing odorous and/or harmful gases from polluted gases/air comprising a scrubber body, a blower to supply the polluted gas into the scrubber body under pressure enabling the supplied polluted gas to travel from lower portion of the scrubber body to upper portion of the scrubber body and one or more diffraction units provided with supply of wash solution accommodated inside of the scrubber body and disposed in pathway of the polluted gas within the scrubber body to diffract the polluted gases/air with the wash solution thereby to clean the polluted gases/air and discharge clean gases/air through a scrubber body outlet at its top. Each of diffraction units includes one or more modularly configurable diffraction plate having an assembly of spaced apart a perforated upper plate and a perforated lower plate wherein each said perforated upper plate and said perforated lower plate having plurality of passing holes on their planer surface and assembled one over the other enabling said passing holes in the perforated upper plate and the perforated lower plate are disposed in a zigzag pattern, whereby the polluted gases/air while moving upwards and upon contact with said wash solution in said diffraction unit while passing through said passing holes in said perforated upper and lower plates of said diffraction unit generate swirl bubbles within the wash solution under pressure of said polluted air/gases moving upwards for maximizing contact with said polluted gases/air and efficient cleaning of the polluted gases/air for release of clean gases/air through the scrubber body outlet.
    • 9. 发明授权
    • Transistor with EOS protection and ESD protection circuit including the same
    • 具有EOS保护和ESD保护电路的晶体管包括相同
    • US08358490B2
    • 2013-01-22
    • US12213231
    • 2008-06-17
    • Chan-Hee JeonKyoung-Sik ImHyun-Jun ChoiHan-Gu Kim
    • Chan-Hee JeonKyoung-Sik ImHyun-Jun ChoiHan-Gu Kim
    • H02H9/00H02H3/20H02H9/04
    • H01L27/0285H01L29/0692H01L29/0847H01L29/4238H01L29/78
    • A transistor with an electrical overstress (EOS) protection may include an active region, a plurality of impurity regions and a conduction pattern. The active region may be formed in a substrate. The impurity regions may be formed in the active region and arranged at a predetermined or given distance with respect to each other. The conduction pattern may be arranged between each of the impurity regions in a meandering shape, and the conduction pattern may include a center portion connected to a ground terminal. Therefore, a transistor with EOS protection, a clamp device, and an ESD protection circuit including the same may increase an on-time of a clamp device and may sufficiently discharge a charge due to the EOS by including a conduction pattern configured with gates that are connected with respect to each other in a meandering shape.
    • 具有电应力(EOS)保护的晶体管可以包括有源区,多个杂质区和导电图。 有源区可以形成在衬底中。 杂质区域可以形成在有源区域中并相对于彼此以预定或给定的距离布置。 导电图案可以以蜿蜒的形状布置在每个杂质区之间,并且导电图案可以包括连接到接地端子的中心部分。 因此,具有EOS保护的晶体管,钳位装置和包括该晶体管的ESD保护电路可以增加钳位装置的导通时间,并且可以通过包括配置有栅极的导通图案来充分地放电由于EOS引起的电荷, 以蜿蜒的形状相对于彼此连接。