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1. 发明授权

US09419272B2 Negative active material for rechargeable lithium battery, method of preparing same, and rechargeable lithium battery including same 有权
标题翻译：用于可再充电锂电池的负极活性材料，其制备方法和包括其的可再充电锂电池
公开(公告)号：US09419272B2
公开(公告)日：2016-08-16
申请号：US13369495
申请日：2012-02-09
申请人： Sung Soo Park , Yong-Sun Won , Jae-Hak Lee
发明人： Sung Soo Park , Yong-Sun Won , Jae-Hak Lee
IPC分类号： H01M4/88 , H01M4/134 , H01M4/58
CPC分类号： H01M4/134 , H01M4/58 , Y02E60/122 , Y02P70/54
摘要： Disclosed are a negative active material for a rechargeable lithium battery including lithium silicide having a I41-a crystalline phase structure, a method of manufacturing the same, and a rechargeable lithium battery including the same.
摘要翻译：公开了一种用于可再充电锂电池的负极活性材料，其包括具有I41-a结晶相结构的硅化锂，其制造方法和包含该锂二次电池的可再充电锂电池。

2. 发明授权

US08722513B2 Semiconductor chip stack package and manufacturing method thereof 有权
标题翻译：半导体芯片堆叠封装及其制造方法
公开(公告)号：US08722513B2
公开(公告)日：2014-05-13
申请号：US13391063
申请日：2011-02-22
申请人： Jae-Hak Lee , Chang-Woo Lee , Joon-Yub Song , Tae-Ho Ha
发明人： Jae-Hak Lee , Chang-Woo Lee , Joon-Yub Song , Tae-Ho Ha
IPC分类号： H01L21/30 , H01L21/31
CPC分类号： H01L23/488 , H01L21/50 , H01L24/26 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L2224/04042 , H01L2224/26145 , H01L2224/27013 , H01L2224/29139 , H01L2224/2919 , H01L2224/29191 , H01L2224/32145 , H01L2224/48091 , H01L2224/73215 , H01L2224/73265 , H01L2224/82143 , H01L2224/83002 , H01L2224/83051 , H01L2224/83143 , H01L2224/83192 , H01L2224/9205 , H01L2224/92147 , H01L2225/0651 , H01L2225/06562 , H01L2225/06593 , H01L2924/00014 , H01L2924/10253 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention relates to a semiconductor chip stack package and a manufacturing method thereof, and more particularly, to a semiconductor chip stack package and a manufacturing method thereof in which a plurality of chips can be rapidly arranged and bonded without a precise device or operation so as to improve productivity.
摘要翻译：半导体芯片堆叠封装及其制造方法技术领域本发明涉及一种半导体芯片堆叠封装及其制造方法，更具体地，涉及一种半导体芯片堆叠封装及其制造方法，其中可以在没有精确的装置或操作的情况下快速地布置和粘合多个芯片以提高生产率。

3. 发明授权

US08513061B2 Method of fabricating a TSV for 3D packaging of semiconductor device 有权
标题翻译：制造半导体器件3D封装的TSV的方法
公开(公告)号：US08513061B2
公开(公告)日：2013-08-20
申请号：US13031861
申请日：2011-02-22
申请人： Jae-Hak Lee , Chang-Woo Lee , Joon-Yub Song , Tae-Ho Ha
发明人： Jae-Hak Lee , Chang-Woo Lee , Joon-Yub Song , Tae-Ho Ha
IPC分类号： H01L21/00 , H01L23/48
CPC分类号： H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/24 , H01L24/27 , H01L24/29 , H01L24/82 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05548 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05669 , H01L2224/13009 , H01L2224/24011 , H01L2224/24146 , H01L2224/24226 , H01L2224/245 , H01L2224/27416 , H01L2224/27452 , H01L2224/2761 , H01L2224/27616 , H01L2224/29187 , H01L2224/821 , H01L2224/82101 , H01L2224/82143 , H01L2224/83001 , H01L2224/83013 , H01L2224/83143 , H01L2224/83192 , H01L2224/92 , H01L2224/9202 , H01L2224/92244 , H01L2225/06513 , H01L2225/06541 , H01L2924/01029 , H01L2924/00014 , H01L2224/03 , H01L2224/27 , H01L2224/83 , H01L2924/01074 , H01L2924/01013
摘要： The present invention relates to a through silicon via (TSV) for 3D packaging to integrate a semiconductor device and a method for manufacturing the same, and more particularly, to a through silicon via (TSV) for 3D packaging of a semiconductor device that is capable of improving production efficiency, having very high electric conductivity, and minimizing electrical signal delay, without using a carrier wafer by self-aligning substrates in a low temperature state and sequentially bonding a plurality of semiconductor dies (or semiconductor chips), and a method of manufacturing the same.
摘要翻译：本发明涉及一种用于3D封装的硅通孔（TSV），用于集成半导体器件及其制造方法，更具体地，涉及一种用于半导体器件的3D封装的贯穿硅通孔（TSV），其具有能够提高生产效率，具有非常高的导电性和最小化电信号延迟，而不用通过在低温状态下自对准衬底并顺序地接合多个半导体管芯（或半导体芯片）而使用载体晶片，以及制造相同。

4. 发明授权

US08278642B2 Resistive random access memory device and method of same 有权
标题翻译：电阻随机存取存储器件及其方法
公开(公告)号：US08278642B2
公开(公告)日：2012-10-02
申请号：US12682547
申请日：2008-10-10
申请人： Kyung-Hwa Yoo , Sung In Kim , Jae Hak Lee , Young Wook Chang
发明人： Kyung-Hwa Yoo , Sung In Kim , Jae Hak Lee , Young Wook Chang
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , B82Y10/00 , G11C2213/16 , G11C2213/32 , H01L27/2463 , H01L45/04 , H01L45/146 , H01L45/1608
摘要： Disclosed are a resistive random access memory device (ReRAM) and a method for manufacturing the same. The ReRAM includes a cell array including a metal oxide nanowire formed inside a micropore array of a porous template, a first electrode electrically connected to an upper protrusion of the metal oxide nanowire, the upper protrusion being exposed to an upper portion of the porous template, and located in an upper portion of the cell array, and a second electrode electrically connected to a lower protrusion of the metal oxide nanowire, the lower protrusion being exposed to a lower portion of the porous template, and located in a lower portion of the cell array.
摘要翻译：公开了一种电阻随机存取存储器件（ReRAM）及其制造方法。 ReRAM包括在多孔模板的微孔阵列内形成的金属氧化物纳米线的单元阵列，与金属氧化物纳米线的上突起电连接的第一电极，上突起暴露于多孔模板的上部，并且位于电池阵列的上部，以及电连接到金属氧化物纳米线的下突起的第二电极，下突起暴露于多孔模板的下部，并且位于电池的下部数组。

5. 发明申请

US20120200024A1 INSERT FOR HANDLER 有权
标题翻译：插件处理器
公开(公告)号：US20120200024A1
公开(公告)日：2012-08-09
申请号：US13395146
申请日：2010-06-24
申请人： Jae Hak Lee
发明人： Jae Hak Lee
IPC分类号： G01R31/26
CPC分类号： G01R31/2887
摘要： An insert for a handler which may be easily replaced when damaged because a semiconductor device is often received in the insert. The insert in which the semiconductor device including a plurality of terminals is received and which allows the semiconductor device to contact an external contactor includes: an insert body that has a through-hole which is formed in a central portion of the insert body and into which the semiconductor device is to be inserted; and a support member that crosses the through-hole to be detachably coupled to the insert body and supports the semiconductor device inserted into the through-hole, wherein a plurality of communication holes are formed to correspond in position to the terminals of the semiconductor device and to pass through the support member from a top surface to a bottom surface of the support member such that the terminals and the external contactor are brought into contact with each other.
摘要翻译：用于处理器的插入件，其可能由于半导体器件经常被接收在插入件中而被损坏时容易地更换。其中容纳包括多个端子的半导体器件并且允许半导体器件接触外部接触器的插入件包括：插入体，其具有形成在插入体的中心部分中的通孔，要插入半导体器件; 以及支撑构件，其穿过所述通孔以可拆卸地联接到所述插入体并且支撑插入所述通孔中的所述半导体装置，其中形成多个连通孔以与半导体装置的端子对应，通过支撑构件从支撑构件的顶表面延伸到底表面，使得端子和外部接触器彼此接触。

6. 发明授权

US07795118B2 Gallium nitride based compound semiconductor device including compliant substrate and method for manufacturing the same 失效
标题翻译：包括柔性衬底的氮化镓基化合物半导体器件及其制造方法
公开(公告)号：US07795118B2
公开(公告)日：2010-09-14
申请号：US11989008
申请日：2006-07-21
申请人： Yong Sung Jin , Jae Hak Lee
发明人： Yong Sung Jin , Jae Hak Lee
IPC分类号： H01L21/20 , H01L21/36 , H01L31/0256
CPC分类号： C30B29/403 , C30B25/02 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/007
摘要： A gallium nitride based compound semiconductor device including a compliant substrate having a reduced stress and a method for manufacturing the same are disclosed. The compliant substrate included in the gallium nitride based compound semiconductor device is manufactured by heating a substrate and a group III metal including at least one of an aluminum, a gallium and an indium, and a chloride based compound generated by introducing a HCl gas to the melted group III metal reacts with a NH3 gas to form a nitride based thin film on the wafer.
摘要翻译：公开了一种包括具有减小的应力的柔性衬底的氮化镓基化合物半导体器件及其制造方法。包括在氮化镓基化合物半导体器件中的兼容衬底通过加热衬底和包括铝，镓和铟中的至少一种的III族金属和通过将HCl气体引入到熔融的III族金属与NH 3气体反应以在晶片上形成氮化物基薄膜。

7. 发明申请

US20050000397A1 Sewing machine 失效
标题翻译：缝纫机
公开(公告)号：US20050000397A1
公开(公告)日：2005-01-06
申请号：US10813983
申请日：2004-03-31
申请人： Jae-Hak Lee , Kyong-Min Ryu
发明人： Jae-Hak Lee , Kyong-Min Ryu
IPC分类号： D05B21/00 , D05B69/00 , D05B73/00 , D05B75/00
CPC分类号： D05B21/00 , D05B75/00
摘要： A sewing machine comprises: a head portion having a sewing needle driven to vertically reciprocate; a lower shaft having a shuttle connected thereto which is driven to rotate synchronized with the vertical movement of the sewing needle cooperating to form stitches; a table positioned above the lower shaft; a retainer positioned above the table to retain a material for forming stitches thereon; a holding frame placed parallel to the table, the head portion being mounted at a position on the holding frame; and supporting posts adapted to support opposite ends of the holding frame for positioning the holding frame above the table. The sewing machine allows a material to be sewn, which is retained retainer, to be easily mounted or removed.
摘要翻译：缝纫机包括：头部，其具有被驱动以垂直往复运动的缝纫针; 具有连接到其上的梭子的下轴被驱动以与缝合针的垂直运动同步地旋转以形成针迹; 位于下轴上方的工作台; 位于桌子上方的保持器，用于保持用于在其上形成针迹的材料; 平行于所述工作台放置的保持框架，所述头部安装在所述保持框架上的位置; 以及适于支撑保持框架的相对端的支撑柱，用于将保持框架定位在桌子上方。缝纫机允许缝合的材料（其是保持的保持器）容易地安装或移除。

8. 发明授权

US5653134A Magnetic card key-operated locking device 失效
标题翻译：磁卡钥匙锁定装置
公开(公告)号：US5653134A
公开(公告)日：1997-08-05
申请号：US540091
申请日：1995-10-06
申请人： Jae-hak Lee , Kyung-soo Kim
发明人： Jae-hak Lee , Kyung-soo Kim
IPC分类号： E05B13/00 , E05B47/00 , E05B49/00 , E05B65/00
CPC分类号： E05B47/0043 , E05B13/005 , Y10S292/27 , Y10T292/0986 , Y10T70/7057 , Y10T70/7757
摘要： A magnetic card key-operated locking device is disclosed. The locking and opening motion of the locking device is performed by a magnetic interaction between the card key and a plurality of magnetized pins. The pins are movably placed in a plurality of holes of a perforated stationary plate, a perforated operating plate and a movable plate. The pins are repulsed by a magnetic plate to cause the operating plate to be coupled to the stationary plate and thereby lock the locking device when there is no card key in a key insert slot. However, when there is a card key in the key insert slot, the pins are repulsed by the card key toward the magnetic plate to cause the operating plate to be separated from the stationary plate but to be coupled to said movable plate and thereby open the locking device.
摘要翻译：公开了一种磁卡钥匙操作的锁定装置。锁定装置的锁定和打开运动通过卡键和多个磁化销之间的磁相互作用来执行。销可移动地放置在穿孔固定板，穿孔操作板和可移动板的多个孔中。销被磁性板排斥以使操作板联接到固定板上，从而当钥匙插入槽中没有卡钥匙时锁定锁定装置。然而，当在钥匙插槽中存在卡钥匙时，销被卡钥匙朝向磁板排斥，使得操作板与固定板分离，而是连接到所述可移动板，从而打开锁定设备。

9. 发明授权

US09751844B2 Precursor compound connected to solid support for manufacturing 18F radiopharmaceutical, method for manufacturing same, and application thereof 有权
公开(公告)号：US09751844B2
公开(公告)日：2017-09-05
申请号：US13994339
申请日：2011-12-13
申请人： Dae-Yoon Chi , Byoung-Se Lee , Jae-Hak Lee , So-Young Chu , Woon-Jung Jung , Hye-Rim Kwon
发明人： Dae-Yoon Chi , Byoung-Se Lee , Jae-Hak Lee , So-Young Chu , Woon-Jung Jung , Hye-Rim Kwon
IPC分类号： A61K9/00 , C07D249/04 , A61K51/04 , C07B59/00 , C07C229/60 , C07D403/12 , C07D417/14 , C07D487/04 , C07H19/06 , C08F212/08 , C08F212/14 , C08F8/02 , C08F8/30 , C08F8/34 , C08F8/44 , C08F12/26 , C08F12/30 , C08F212/32
CPC分类号： C07D249/04 , A61K51/04 , A61K51/0406 , A61K51/0453 , A61K51/0455 , A61K51/0465 , A61K51/047 , A61K51/0491 , C07B59/00 , C07C229/60 , C07D403/12 , C07D417/14 , C07D487/04 , C07H19/06 , C08F8/02 , C08F8/30 , C08F8/34 , C08F8/44 , C08F12/26 , C08F12/30 , C08F212/08 , C08F212/14 , C08F212/32 , C08F12/18 , C08F12/22 , C08F212/36
摘要： The present invention relates to a solid precursor in the form of an organic salt, the solid precursor having a solid support, a method for manufacturing same, and an application thereof. The solid precursor of the present invention enables omission of the [18F]fluoride refining process using additional cartridge, and the use of excessive phase-transfer catalyst, and can easily remove remaining substance after reaction through the solid support inside the precursor. The solid precursor of the present invention is very appropriate for an automated synthesis device as an all-in-one system that can carry out overall process of [18F]fluorosis reaction, when used by charging in a cartridge.

10. 发明授权

US08741672B2 Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel 有权
标题翻译：薄膜晶体管，薄膜晶体管阵列面板的结晶方法及薄膜晶体管阵列面板的制造方法
公开(公告)号：US08741672B2
公开(公告)日：2014-06-03
申请号：US13535007
申请日：2012-06-27
申请人： Joo-Han Kim , Hwa-Dong Jung , Wan-Soon Lim , Jee-Hun Lim , Joo Seok Yeom , Tae-Kyung Yim , Jae-Hak Lee , Hyuk Soon Kwon , Hyoung Cheol Lee , Jeong-Ju Park , Se-Myung Kwon , So-Young Koo
发明人： Joo-Han Kim , Hwa-Dong Jung , Wan-Soon Lim , Jee-Hun Lim , Joo Seok Yeom , Tae-Kyung Yim , Jae-Hak Lee , Hyuk Soon Kwon , Hyoung Cheol Lee , Jeong-Ju Park , Se-Myung Kwon , So-Young Koo
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78663 , H01L27/1222 , H01L27/1285
摘要： Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.
摘要翻译：本发明的示例性实施例公开了一种制造薄膜晶体管阵列面板的方法，其具有缩短的总体处理时间并提供均匀的结晶。本发明的示例性实施例还公开了一种薄膜晶体管的结晶方法，包括在基板上形成包括第一像素区域，第二像素区域和第三像素区域的半导体层。结晶方法包括使用微透镜阵列结晶对应于薄膜晶体管的沟道区的半导体层的一部分。

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