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1. 发明申请

US20160232972A1 METHODS OF FORMING NANOTUBE FILMS AND ARTICLES 审中-公开
标题翻译：形成纳米薄膜和文章的方法
公开(公告)号：US20160232972A1
公开(公告)日：2016-08-11
申请号：US15005091
申请日：2016-01-25
申请人： Nantero Inc.
发明人： Thomas Rueckes , Brent M. Segal
IPC分类号： G11C13/02 , D04H1/4242 , H01L51/00 , H01L21/288 , G11C23/00 , H01L21/768
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , D01F9/127 , D04H1/4234 , D04H1/4242 , D04H1/4382 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01L21/76838 , H01L27/10 , H01L27/1203 , H01L51/0003 , H01L51/0017 , H01L51/0048 , H01L51/0098 , H01L2221/1094 , Y10S977/742 , Y10S977/75 , Y10S977/778 , Y10S977/943 , Y10T428/24802 , Y10T428/2918 , Y10T428/2982 , Y10T428/30
摘要： Nanotube films and articles and methods of making the same are disclosed. A conductive article or a substrate comprises at least two unaligned nanotubes extending substantially parallel to the substrate and each contacting end points of the article but each unaligned relative to the other, the nanotubes providing a conductive pathway within a predefined space.
摘要翻译：公开了纳米管薄膜及制品及其制造方法。导电制品或基底包括基本上平行于基底平行延伸的至少两个未对齐的纳米管，并且每个接触到制品的端点，但是每个相对于另一个未对准，纳米管在预定空间内提供导电路径。

2. 发明申请

US20160126482A1 Assembly of Vertically Aligned Nanotube Arrays Containing Particles and Application Thereof 有权
标题翻译：包含颗粒的垂直对齐的纳米管阵列的组装及其应用
公开(公告)号：US20160126482A1
公开(公告)日：2016-05-05
申请号：US14978962
申请日：2015-12-22
申请人： Huawei Technologies Co., Ltd.
发明人： David Tomanek , Wei Han
IPC分类号： H01L51/05 , H01L27/28 , H01L51/00
CPC分类号： H01L51/0591 , B82Y10/00 , B82Y40/00 , G11C13/025 , G11C2213/16 , H01L27/281 , H01L51/0023 , H01L51/0048 , Y10S977/743 , Y10S977/848 , Y10S977/943
摘要： A nanotube assembly including a nanotube layer, a first layer and a second layer. The nanotube layer comprises a vertically aligned nanotube array. The nanotube array includes a plurality of nanotubes. The first layer of a first conductive material is disposed on one surface of the nanotube layer. The second layer of a second conductive material is disposed on an opposite surface of the nanotube layer. The nanotube of the nanotube layer includes a first end against the first layer and a second end against the second layer. The resistance from the first end to the first layer is lower than a resistance from the second end to the second layer. One or more nano-particles are placed within the nanotube. At least one of the nano-particles is electrically charged, and can move along the nanotube under influence of an electric field.
摘要翻译：一种纳米管组件，包括纳米管层，第一层和第二层。纳米管层包括垂直排列的纳米管阵列。纳米管阵列包括多个纳米管。第一导电材料的第一层设置在纳米管层的一个表面上。第二导电材料的第二层设置在纳米管层的相对表面上。纳米管层的纳米管包括抵抗第一层的第一端和抵抗第二层的第二端。从第一端到第一层的电阻低于从第二端到第二层的电阻。一个或多个纳米颗粒被放置在纳米管内。纳米颗粒中的至少一个是带电的，并且可以在电场的影响下沿着纳米管移动。

3. 发明授权

US09190611B2 Electronic device, and method of manufacturing an electronic device 有权
标题翻译：电子设备以及电子设备的制造方法
公开(公告)号：US09190611B2
公开(公告)日：2015-11-17
申请号：US12665840
申请日：2008-06-20
申请人： David Tio Castro , Almudena Huerta
发明人： David Tio Castro , Almudena Huerta
IPC分类号： H01L29/02 , H01L45/00 , B82Y10/00 , G11C13/00
CPC分类号： H01L45/1226 , B82Y10/00 , G11C13/0004 , G11C2213/16 , G11C2213/79 , H01L45/06 , H01L45/1246 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： An electronic device (100), the electronic device (100) comprising a substrate (101), a convertible structure (102) arranged on and/or in the substrate (101), being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states, wherein the convertible structure (102) has a first portion having a first width (w1), and has a second portion having a second width (w2), the second width (w2) being smaller than the first width (w1), and a protrusion (108) protruding through the convertible structure (102) to thereby narrow the second portion of the convertible structure (102) from the first width (w1) to the second width (w2).
摘要翻译：一种电子设备（100），所述电子设备（100）包括衬底（101），布置在所述衬底（101）上和/或衬底（101）中的可转换结构（102），可通过加热在至少两个状态之间转换并具有不同的所述可转换结构（102）具有具有第一宽度（w1）的第一部分和具有第二宽度（w2）的第二部分，所述第二宽度（w2）小于第一宽度（w1）的突起（108）和突出通过可转换结构（102）的突起（108），从而将可转换结构（102）的第二部分从第一宽度（w1）缩小到第二宽度（w2 ）。

4. 发明授权

US08637356B2 Method of integrating a single nanowire into a nanocircuit 有权
标题翻译：将单个纳米线整合到纳米电路中的方法
公开(公告)号：US08637356B2
公开(公告)日：2014-01-28
申请号：US13534105
申请日：2012-06-27
申请人： Sivasubramanian Somu , Ahmed Busnaina , Nicol McGruer , Peter Ryan , George G. Adams , Xugang Xiong , Taehoon Kim
发明人： Sivasubramanian Somu , Ahmed Busnaina , Nicol McGruer , Peter Ryan , George G. Adams , Xugang Xiong , Taehoon Kim
IPC分类号： B82Y10/00 , H01L21/00
CPC分类号： H01H11/04 , B82Y10/00 , B82Y40/00 , G11C11/50 , G11C13/025 , G11C2213/16 , H01L51/0048 , H01L51/0575 , H01L51/0591 , Y10S977/89 , Y10S977/943
摘要： A non-volatile bistable nano-electromechanical switch is provided for use in memory devices and microprocessors. The switch employs carbon nanotubes as the actuation element. A method has been developed for fabricating nanoswitches having one single-walled carbon nanotube as the actuator. The actuation of two different states can be achieved using the same low voltage for each state.
摘要翻译：提供了用于存储器件和微处理器的非易失性双稳态纳米机电开关。开关采用碳纳米管作为驱动元件。已经开发了用于制造具有一个单壁碳纳米管作为致动器的纳米开关的方法。对于每个状态，可以使用相同的低电压来实现两种不同状态的致动。

5. 发明申请

US20130135008A1 METHOD AND SYSTEM FOR A RUN-TIME RECONFIGURABLE COMPUTER ARCHITECTURE 有权
标题翻译：运行时可重构计算机架构的方法和系统
公开(公告)号：US20130135008A1
公开(公告)日：2013-05-30
申请号：US13513277
申请日：2010-12-01
申请人： Wei Zhang , Niraj K. Jha , Li Shang
发明人： Wei Zhang , Niraj K. Jha , Li Shang
IPC分类号： G06F17/50 , H03K19/177
CPC分类号： G06F17/505 , B82Y10/00 , G06F15/7867 , G11C13/025 , G11C2213/16 , H03K19/177 , H03K19/17748
摘要： A reconfigurable computer architecture is disclosed. The reconfigurable computer architecture has a plurality of logic elements, a plurality of connection switching elements, and a plurality of volatile and/or non-volatile configuration random access memories (RAMs). Each of the configuration RAMs is electrically coupled to at least one of the plurality of logic elements or at least one of the connection switching elements.
摘要翻译：公开了一种可重构计算机体系结构。可重构计算机体系结构具有多个逻辑元件，多个连接切换元件以及多个易失性和/或非易失性配置随机存取存储器（RAM）。每个配置RAM电耦合到多个逻辑元件中的至少一个或连接切换元件中的至少一个。

6. 发明申请

US20130039116A1 PROGRAMMABLE READ-ONLY MEMORY DEVICE AND METHOD OF WRITING THE SAME 有权
标题翻译：可编程只读存储器件及其编写方法
公开(公告)号：US20130039116A1
公开(公告)日：2013-02-14
申请号：US13557179
申请日：2012-07-24
申请人： Holger Kropp , Meinolf Blawat
发明人： Holger Kropp , Meinolf Blawat
IPC分类号： G11C17/00 , H01L29/861 , B82Y99/00
CPC分类号： G11C17/10 , B82Y10/00 , B82Y30/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/19 , G11C2213/35 , G11C2213/81 , H01L27/101 , H01L27/1021 , H01L29/0665
摘要： A bit cell of the PROM-device comprises a carbon nanotube having a tilted portion comprising a free end and a fixed portion which is to the reference node. The carbon nanotube comprises a structural defect between the fixed and the tilted portion which causes the carbon nanotube to tilt such that the free end is electrically connected to either the storage electrode or an opposite release electrode.
摘要翻译： PROM装置的位单元包括具有包括自由端的倾斜部分和到参考节点的固定部分的碳纳米管。碳纳米管包括在固定和倾斜部分之间的结构缺陷，这导致碳纳米管倾斜，使得自由端电连接到存储电极或相对的释放电极。

7. 发明申请

US20120292707A1 NANO-ELECTRO-MECHANICAL SYSTEM (NEMS) STRUCTURES ON BULK SUBSTRATES 有权
标题翻译：纳米电子机械系统（NEMS）结构在大块基板上
公开(公告)号：US20120292707A1
公开(公告)日：2012-11-22
申请号：US13108439
申请日：2011-05-16
申请人： Eng Huat Toh , Elgin Quek , Chung Foong Tan
发明人： Eng Huat Toh , Elgin Quek , Chung Foong Tan
IPC分类号： H01L21/336 , H01L29/78 , B82Y99/00
CPC分类号： H01L29/685 , B81B3/0081 , B81B2203/0109 , B81B2207/015 , B82Y10/00 , G11C11/56 , G11C23/00 , G11C2213/16 , H01L21/28282 , H01L21/764 , H01L27/1052 , H01L27/10826 , H01L27/10879 , H01L27/10894 , H01L27/1104 , H01L27/11573 , H01L29/66833 , H01L29/785 , H01L29/792
摘要： Semiconductor devices are formed with a nano-electro-mechanical system (NEMS) logic or memory on a bulk substrate. Embodiments include forming source/drain regions directly on a bulk substrate, forming a fin connecting the source/drain regions, forming two gates, one on each side of the fin, the two gates being insulated from the bulk substrate, and forming a substrate gate in the bulk substrate. The fin is separated from each of the two gates and the substrate gate with an air gap.
摘要翻译：半导体器件由体积衬底上的纳米机电系统（NEMS）逻辑或存储器形成。实施例包括直接在体基板上形成源极/漏极区域，形成连接源极/漏极区域的鳍片，形成两个栅极，鳍片的每一侧上一个，两个栅极与本体衬底绝缘，以及形成衬底栅极在散装衬底中。翅片与具有气隙的两个栅极和衬底栅极中的每一个分离。

8. 发明申请

US20120225527A1 HIGH DENSITY LOW POWER NANOWIRE PHASE CHANGE MATERIAL MEMORY DEVICE 有权
标题翻译：高密度低功率纳米相变材料存储器件
公开(公告)号：US20120225527A1
公开(公告)日：2012-09-06
申请号：US13471711
申请日：2012-05-15
申请人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Dennis M. Newns , Robert L. Sandstrom
发明人： Bruce G. Elmegreen , Lia Krusin-Elbaum , Dennis M. Newns , Robert L. Sandstrom
IPC分类号： H01L21/336
CPC分类号： H01L45/1233 , B82Y10/00 , G11C13/0004 , G11C2213/16 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2454 , H01L27/2463 , H01L29/0665 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L45/06 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1666
摘要： A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.
摘要翻译：存储单元器件包括半导体纳米线，其半导体纳米线在其第一端处从衬底延伸; 所述纳米线具有掺杂分布以便限定与所述第一端相邻的场效应晶体管（FET），所述FET还包括至少部分地围绕所述纳米线的栅电极，所述掺杂分布进一步限定与所述FET串联的pn结，邻近纳米线第二端的pn结; 以及在对应于p-n结的位置处至少部分地围绕纳米线的相变材料。

9. 发明申请

US20120168290A1 SWITCH DEVICE AND CIRCUIT INCLUDING SWITCH DEVICE 失效
标题翻译：开关装置和电路，其中包括开关装置
公开(公告)号：US20120168290A1
公开(公告)日：2012-07-05
申请号：US13421314
申请日：2012-03-15
申请人： Shinobu FUJITA
发明人： Shinobu FUJITA
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16
摘要： According to one embodiment, a switch device includes a first switching unit provided on a base substance. The first switching unit includes a first supporting electrode, a first beam, a first contact point electrode, a first floating conductive layer and a first control electrode. The first supporting electrode is fixed to the base. The first beam includes a first holding part and a first movable part. The first holding part is fixed to the base. The first movable part has one end connected to the first holding part. The first contact point electrode is fixed to the base and faces the first movable part. The first floating conductive layer is fixed to the first movable part via a first insulating part and stores a charge. The first control electrode is fixed to the base and faces the first floating conductive layer.
摘要翻译：根据一个实施例，开关装置包括设置在基础物质上的第一切换单元。第一开关单元包括第一支撑电极，第一光束，第一接触点电极，第一浮动导电层和第一控制电极。第一支撑电极固定在基座上。第一梁包括第一保持部和第一可动部。第一个保持部分固定在基座上。第一可移动部分的一端连接到第一保持部分。第一接触点电极固定在基座上，面向第一可移动部分。第一浮动导电层经由第一绝缘部固定到第一可动部，并存储电荷。第一控制电极固定到基座并且面向第一浮动导电层。

10. 发明授权

US08211765B2 Bistable nanoswitch 有权
标题翻译：双稳态纳米开关
公开(公告)号：US08211765B2
公开(公告)日：2012-07-03
申请号：US13228701
申请日：2011-09-09
申请人： Sivasubramanian Somu , Ahmed Busnaina , Nicol McGruer , Peter Ryan , George G. Adams , Xugang Xiong , Taehoon Kim
发明人： Sivasubramanian Somu , Ahmed Busnaina , Nicol McGruer , Peter Ryan , George G. Adams , Xugang Xiong , Taehoon Kim
IPC分类号： H01L21/336 , H01L51/40 , H01L21/8238
CPC分类号： H01H11/04 , B82Y10/00 , B82Y40/00 , G11C11/50 , G11C13/025 , G11C2213/16 , H01L51/0048 , H01L51/0575 , H01L51/0591 , Y10S977/89 , Y10S977/943
摘要： A non-volatile bistable nano-electromechanical switch is provided for use in memory devices and microprocessors. The switch employs carbon nanotubes as the actuation element. A method has been developed for fabricating nanoswitches having one single-walled carbon nanotube as the actuator. The actuation of two different states can be achieved using the same low voltage for each state.
摘要翻译：提供了用于存储器件和微处理器的非易失性双稳态纳米机电开关。开关采用碳纳米管作为驱动元件。已经开发了用于制造具有一个单壁碳纳米管作为致动器的纳米开关的方法。对于每个状态，可以使用相同的低电压来实现两种不同状态的致动。

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