会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明申请
    • LOW VARIATION RESISTOR
    • 低变电阻
    • US20100052840A1
    • 2010-03-04
    • US12198643
    • 2008-08-26
    • Jimmy FortMichel Cuenca
    • Jimmy FortMichel Cuenca
    • H01L35/00H01C7/06
    • H01C7/06
    • This document discloses low variation resistor devices, methods, systems, and methods of manufacturing the same. In some implementations, a low-variation resistor can be implemented with a metal-oxide-semiconductor field-effect-transistor (“MOSFET”) operating in the triode (e.g., ohmic) region. The MOSFET can have a source that is connected to a reference voltage (e.g., ground) and a gate connected to a gate voltage source. The gate voltage source can generate a gate voltage that varies in proportion to changes in the temperature of an operating environment. The gate voltage variation can, for example, be controlled so that it offsets the changes in MOSFET resistance that are caused by changes in temperature. In some implementations, the gate voltage variation offsets the resistance variance by offsetting changes in transistor mobility that are caused by changes in temperature.
    • 本文件公开了低变差电阻器件,方法,系统及其制造方法。 在一些实施方案中,可以在三极管(例如,欧姆)区域中工作的金属氧化物半导体场效应晶体管(“MOSFET”)实现低变化电阻器。 MOSFET可以具有连接到参考电压(例如,接地)的源极和连接到栅极电压源的栅极。 栅极电压源可以产生与操作环境的温度变化成比例地变化的栅极电压。 例如,可以控制栅极电压变化,使得其抵消由温度变化引起的MOSFET电阻的变化。 在一些实施方案中,栅极电压变化通过抵消由温度变化引起的晶体管迁移率的变化抵消电阻变化。
    • 9. 发明申请
    • SINGLE ENDED SENSE AMPLIFIER FOR VERY LOW VOLTAGE APPLICATIONS
    • 用于非常低电压应用的单端感测放大器
    • US20080192555A1
    • 2008-08-14
    • US11673105
    • 2007-02-09
    • Jimmy Fort
    • Jimmy Fort
    • G11C7/02
    • G11C7/067
    • A sense amplifier has a transimpedance amplifier capable of producing an output voltage level proportionate to a current variation sensed going into a bitline. A transconductance device is configured to produce varying bitline current in response to the transimpedance amplifier output voltage. The transconductance device is capable of utilizing the transimpedance amplifier output voltage as feedback to produce a bitline clamp voltage level. The transimpedance amplifier configured to produce an output voltage proportionate to a cell current of a selected memory cell and provide an output signal corresponding to a memory cell state. An output amplifier is coupled to the transimpedance amplifier and capable of producing an output signal level proportionate to the transimpedance amplifier output voltage. A bias circuit is coupled to the transimpedance amplifier and the output amplifier, the bias circuit is capable of producing reference mirror currents through the transimpedance amplifier and the output amplifier.
    • 读出放大器具有跨阻抗放大器,其能够产生与感测进入位线的电流变化成比例的输出电压电平。 跨导装置被配置为响应于跨阻放大器输出电压产生变化的位线电流。 跨导器件能够利用跨阻放大器输出电压作为反馈来产生位线钳位电压电平。 跨阻放大器被配置为产生与所选存储器单元的单元电流成比例的输出电压,并提供对应于存储单元状态的输出信号。 输出放大器耦合到跨阻放大器,并且能够产生与跨阻放大器输出电压成比例的输出信号电平。 偏置电路耦合到跨阻放大器和输出放大器,偏置电路能够通过跨阻放大器和输出放大器产生参考反射镜电流。
    • 10. 发明授权
    • Device for generating a reference current proportional to absolute temperature, with low power supply voltage and large power supply rejection rate
    • 用于产生与绝对温度成比例的参考电流的装置,具有低电源电压和大的电源抑制率
    • US08653885B2
    • 2014-02-18
    • US13472706
    • 2012-05-16
    • Jimmy FortThierry Soude
    • Jimmy FortThierry Soude
    • G06F1/10G05F3/02
    • G05F3/30
    • The device for generating a reference current proportional to absolute temperature comprises processing means connected to the terminals of a core and designed to equalize the voltages across the terminals of the core, the core being designed to then be traversed by an internal current proportional to absolute temperature, and an output module designed to deliver to an output terminal the said reference current on the basis of the said internal current; the processing means comprise a self-biased amplifier possessing at least one first stage arranged according to a folded setup and comprising first PMOS transistors arranged in a setup of the common-gate type, and a feedback stage whose input is connected to the output of the amplifier and whose output is connected to the input of the first stage as well as to at least one terminal of the core.
    • 用于产生与绝对温度成比例的参考电流的装置包括连接到芯的端子并被设计成均衡芯的端子两端的电压的处理装置,芯被设计成随着与绝对温度成正比的内部电流 以及输出模块,被设计为基于所述内部电流将输出端子传递给所述参考电流; 该处理装置包括一个自偏置放大器,该放大器具有至少一个根据折叠设置布置的第一级,并且包括以公共门类型设置的第一PMOS晶体管,以及反馈级,其输入端连接到 放大器,其输出端连接到第一级的输入端以及至少一个端子。