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    • 4. 发明申请
    • INTEGRATED CIRCUIT INCLUDING AN EMITTER STRUCTURE AND METHOD FOR PRODUCING THE SAME
    • 集成电路,包括发射极结构及其制造方法
    • US20090140388A1
    • 2009-06-04
    • US11947246
    • 2007-11-29
    • Joachim JoosMatthias Stecher
    • Joachim JoosMatthias Stecher
    • H01L29/732H01L21/331
    • H01L29/7322H01L27/0259H01L29/0804
    • A semiconductor emitter structure for emitting charge carriers of a first conductivity type in a base volume of a second conductivity type material neighbored to the emitter structure in a vertical direction, includes multiple emitter volumes of first conductivity tape material having a predetermined lateral dimension in a lateral direction perpendicular to the vertical direction. The emitter volumes are, in the lateral direction, neighbored by semiconductor volumes of second conductivity type material, wherein the predetermined lateral dimension is such that space charges created by second conductivity type carriers laterally diffusing into the emitter volumes from the semiconductor volumes limit a maximum density of first conductivity type carriers within the emitter volumes by more than 20% as compared to emitter volumes of the same lateral dimension not neighbored by semiconductor volumes of the second conductivity type material.
    • 用于发射在垂直方向上与发射极结构邻近的第二导电类型材料的基体积中的第一导电类型的载流子的半导体发射极结构包括多个发射体积的第一导电带材料,其具有在侧向上具有预定横向尺寸 方向垂直于垂直方向。 发射体体积在横向方向上与第二导电类型材料的半导体体积相邻,其中预定横向尺寸使得由第二导电类型载流子产生的空间电荷从半导体体积横向扩散到发射体体积中限制最大密度 与不与第二导电类型材料的半导体体积相邻的相同横向尺寸的发射体体积相比,发射体体积内的第一导电类型载流子的比例大于20%。