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1. 发明申请

US20110031551A1 Structure and Method For Forming Laterally Extending Dielectric Layer in a Trench-Gate FET 有权
标题翻译：在沟槽栅FET中形成横向延伸介质层的结构和方法
公开(公告)号：US20110031551A1
公开(公告)日：2011-02-10
申请号：US12907805
申请日：2010-10-19
申请人： John Tracey Andrews
发明人： John Tracey Andrews
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/66734 , H01L29/407 , H01L29/42368 , H01L2924/0002 , H01L2924/00
摘要： A FET is formed as follows. A trench is formed in a silicon region. A shield electrode is formed in a bottom portion of the trench. The shield electrode is insulated from adjacent silicon region by a shield dielectric. A silicon nitride layer is formed over a surface of the silicon region adjacent the trench, along the trench sidewalls, and over the shield electrode and shield dielectric. A layer of LTO is formed over the silicon nitride layer such that those portions of the LTO layer extending over the surface of the silicon region adjacent the trench are thicker than the portion of the LTO layer extending over the shield electrode. The LTO layer is uniformly etched back such that a portion of the silicon nitride layer becomes exposed while portions of the silicon nitride layer remain covered.
摘要翻译：如下形成FET。在硅区域形成沟槽。屏蔽电极形成在沟槽的底部。屏蔽电极通过屏蔽电介质与相邻硅区绝缘。氮化硅层形成在与沟槽相邻的硅区域的表面上，沿着沟槽侧壁，以及屏蔽电极和屏蔽电介质之上。在氮化硅层上形成一层LTO，使得在与沟槽相邻的硅区域的表面上延伸的LTO层的那些部分比在屏蔽电极上延伸的LTO层的部分更厚。 LTO层被均匀地回蚀，使得氮化硅层的一部分暴露，同时氮化硅层的一部分保持被覆盖。

2. 发明授权

US07855115B2 Method for forming laterally extending dielectric layer in a trench-gate FET 有权
标题翻译：在沟槽栅FET中形成横向延伸电介质层的方法
公开(公告)号：US07855115B2
公开(公告)日：2010-12-21
申请号：US12576120
申请日：2009-10-08
申请人： John Tracey Andrews
发明人： John Tracey Andrews
IPC分类号： H01L21/336
CPC分类号： H01L29/66734 , H01L29/407 , H01L29/42368 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor (FET) is formed as follows. A trench is formed in a silicon region. An oxidation barrier layer is formed over a surface of the silicon region adjacent the trench and along the trench sidewalls and bottom. A protective layer is formed over the oxidation barrier layer inside and outside the trench. The protective layer is partially removed such that a portion of the oxidation barrier layer extending at least along the trench bottom becomes exposed and portions of the oxidation barrier layer extending over the surface of the silicon region adjacent the trench remain covered by remaining portions of the protective layer.
摘要翻译：场效应晶体管（FET）如下形成。在硅区域形成沟槽。在邻近沟槽的硅区域的表面上并且沿着沟槽侧壁和底部形成氧化阻挡层。在沟槽内部和外部的氧化阻挡层上形成保护层。保护层被部分去除，使得至少沿着沟槽底部延伸的部分氧化阻挡层变得暴露，并且在靠近沟槽的硅区域的表面上延伸的氧化阻挡层的部分保持被保护层的剩余部分覆盖层。

3. 发明授权

US07648877B2 Structure and method for forming laterally extending dielectric layer in a trench-gate FET 有权
标题翻译：在沟槽栅FET中形成横向延伸的电介质层的结构和方法
公开(公告)号：US07648877B2
公开(公告)日：2010-01-19
申请号：US11166356
申请日：2005-06-24
申请人： John Tracey Andrews
发明人： John Tracey Andrews
IPC分类号： H01L21/336
CPC分类号： H01L29/66734 , H01L29/407 , H01L29/42368 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor (FET) is formed as follows. A trench is formed in a silicon region. An oxidation barrier layer is formed over a surface of the silicon region adjacent the trench and along the trench sidewalls and bottom. A protective layer is formed over the oxidation barrier layer inside and outside the trench. The protective layer is partially removed such that a portion of the oxidation barrier layer extending at least along the trench bottom becomes exposed and portions of the oxidation barrier layer extending over the surface of the silicon region adjacent the trench remain covered by remaining portions of the protective layer.
摘要翻译：场效应晶体管（FET）如下形成。在硅区域形成沟槽。在邻近沟槽的硅区域的表面上并且沿着沟槽侧壁和底部形成氧化阻挡层。在沟槽内部和外部的氧化阻挡层上形成保护层。保护层被部分去除，使得至少沿着沟槽底部延伸的部分氧化阻挡层变得暴露，并且在靠近沟槽的硅区域的表面上延伸的氧化阻挡层的部分保持被保护层的剩余部分覆盖层。

4. 发明授权

US08278704B2 Structure and method for forming laterally extending dielectric layer in a trench-gate FET 有权
标题翻译：在沟槽栅FET中形成横向延伸的电介质层的结构和方法
公开(公告)号：US08278704B2
公开(公告)日：2012-10-02
申请号：US12907805
申请日：2010-10-19
申请人： John Tracey Andrews
发明人： John Tracey Andrews
IPC分类号： H01L29/792
CPC分类号： H01L29/66734 , H01L29/407 , H01L29/42368 , H01L2924/0002 , H01L2924/00
摘要： A FET is formed as follows. A trench is formed in a silicon region. A shield electrode is formed in a bottom portion of the trench. The shield electrode is insulated from adjacent silicon region by a shield dielectric. A silicon nitride layer is formed over a surface of the silicon region adjacent the trench, along the trench sidewalls, and over the shield electrode and shield dielectric. A layer of LTO is formed over the silicon nitride layer such that those portions of the LTO layer extending over the surface of the silicon region adjacent the trench are thicker than the portion of the LTO layer extending over the shield electrode. The LTO layer is uniformly etched back such that a portion of the silicon nitride layer becomes exposed while portions of the silicon nitride layer remain covered.
摘要翻译：如下形成FET。在硅区域形成沟槽。屏蔽电极形成在沟槽的底部。屏蔽电极通过屏蔽电介质与相邻硅区绝缘。氮化硅层形成在与沟槽相邻的硅区域的表面上，沿着沟槽侧壁，以及屏蔽电极和屏蔽电介质之上。在氮化硅层上形成一层LTO，使得在与沟槽相邻的硅区域的表面上延伸的LTO层的那些部分比在屏蔽电极上延伸的LTO层的部分更厚。 LTO层被均匀地回蚀，使得氮化硅层的一部分暴露，同时氮化硅层的一部分保持被覆盖。

5. 发明申请

US20100029083A1 Method for Forming Laterally Extending Dielectric Layer in a Trench-Gate FET 有权
标题翻译：在沟槽栅FET中形成电介质层的方法
公开(公告)号：US20100029083A1
公开(公告)日：2010-02-04
申请号：US12576120
申请日：2009-10-08
申请人： John Tracey Andrews
发明人： John Tracey Andrews
IPC分类号： H01L21/31
CPC分类号： H01L29/66734 , H01L29/407 , H01L29/42368 , H01L2924/0002 , H01L2924/00
摘要： A field effect transistor (FET) is formed as follows. A trench is formed in a silicon region. An oxidation barrier layer is formed over a surface of the silicon region adjacent the trench and along the trench sidewalls and bottom. A protective layer is formed over the oxidation barrier layer inside and outside the trench. The protective layer is partially removed such that a portion of the oxidation barrier layer extending at least along the trench bottom becomes exposed and portions of the oxidation barrier layer extending over the surface of the silicon region adjacent the trench remain covered by remaining portions of the protective layer.
摘要翻译：场效应晶体管（FET）如下形成。在硅区域形成沟槽。在邻近沟槽的硅区域的表面上并且沿着沟槽侧壁和底部形成氧化阻挡层。在沟槽内部和外部的氧化阻挡层上形成保护层。保护层被部分去除，使得至少沿着沟槽底部延伸的部分氧化阻挡层变得暴露，并且在靠近沟槽的硅区域的表面上延伸的氧化阻挡层的部分保持被保护层的剩余部分覆盖层。

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