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1. 发明申请

US20200179617A1 DUAL NEEDLE SYRINGE FOR PREVENTING INFECTION 审中-公开
公开(公告)号：US20200179617A1
公开(公告)日：2020-06-11
申请号：US16623290
申请日：2018-06-11
申请人： Jong-Eun PARK , Ah Ri SONG
发明人： Jong-Eun PARK , Ah Ri SONG
IPC分类号： A61M5/32 , A61M5/178 , A61M5/34 , A61M5/31
摘要： A dual-needle syringe capable of preventing infection, including: an infusion needle shaft (3) configured to aspirate a liquid from a drug container (30); an injection needle shaft (5) having a sharp point of one end inserted into a body, and the other end connected to the syringe (10), through which the liquid filled in the syringe (10) is injected into a body; a hub barrel (7) engaged to a barrel (15) of the syringe (10) to infuse the liquid, which is aspirated from the drug container (30) through the infusion needle shaft (3), into the syringe (10) through the injection needle shaft (5), the hub barrel having an infusion needle shaft hub (21) and an injection needle shaft hub (23) which can be separated from each other before the liquid is injected; and a filter (9) configured to filter foreign substances contained in the liquid.

2. 发明授权

US07816041B2 Fuel cell 有权
标题翻译：燃料电池
公开(公告)号：US07816041B2
公开(公告)日：2010-10-19
申请号：US11515871
申请日：2006-09-06
申请人： Tetsuya Osaka , Toshiyuki Momma , Jong-Eun Park
发明人： Tetsuya Osaka , Toshiyuki Momma , Jong-Eun Park
IPC分类号： H01M8/00
CPC分类号： H01M8/1009 , H01M8/0258 , H01M8/026 , H01M8/04186 , H01M8/1011 , H01M2008/1095 , Y02E60/523
摘要： A fuel cell includes a substrate having a pair of grooves, an electrolyte membrane lying on the substrate so as to define a pair of flow channels, and catalyst-bearing current collector layer sections disposed on the inner wall of the grooves or the inside surface of the electrolyte membrane defining the channels. A fuel liquid flows through the first channel to undergo anodic reaction, an oxidant liquid in the form of an aqueous hydrogen peroxide solution flows through the second channel to undergo cathodic reaction, and hydrogen ions traverse the electrolyte membrane.
摘要翻译：燃料电池包括具有一对槽的基板，位于基板上的电解质膜，以限定一对流动通道，以及设置在槽或内表面的内壁上的催化剂负载集流层部分限定通道的电解质膜。燃料液体流过第一通道进行阳极反应，过氧化氢水溶液形式的氧化剂液体流过第二通道进行阴极反应，氢离子穿过电解质膜。

3. 发明申请

US20100134668A1 Image sensors 审中-公开
标题翻译：图像传感器
公开(公告)号：US20100134668A1
公开(公告)日：2010-06-03
申请号：US12591721
申请日：2009-11-30
申请人： Jong Eun Park , Yong Jei Lee , Jung Chak Ahn , Dong-Yoon Jang
发明人： Jong Eun Park , Yong Jei Lee , Jung Chak Ahn , Dong-Yoon Jang
IPC分类号： H04N5/335 , H01L31/0352
CPC分类号： H01L27/1463 , H01L27/14629 , H01L27/1464
摘要： An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.
摘要翻译：图像传感器包括用于将多个光电二极管彼此隔离的多个阱。每个阱包括配置成接收正偏置电压的P型阱区和N型阱区。图像传感器通过抑制起霜效果和暗电流来提供更清晰的图像。

4. 发明申请

US20100045836A1 Image sensor and image sensing system including the same 有权
标题翻译：图像传感器和图像传感系统包括相同的
公开(公告)号：US20100045836A1
公开(公告)日：2010-02-25
申请号：US12461608
申请日：2009-08-18
申请人： Yong Jei Lee , Jung Chak Ahn , Jong Eun Park , Dong-Yoon Jang
发明人： Yong Jei Lee , Jung Chak Ahn , Jong Eun Park , Dong-Yoon Jang
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14612 , H01L27/14641
摘要： An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.
摘要翻译：图像传感器包括在半导体衬底中的导电阱，在导电阱下方的半导体衬底中的光敏器件（PSD），PSD和导电阱彼此重叠的光敏器件（PSD）以及半导体衬底中的电荷传输单元所述电荷传输单元具有凹入栅极的结构并且位于所述半导体衬底的凹部区域中。

5. 发明申请

US20130102910A1 CUFF FOR A BLOOD PRESSURE METER 审中-公开
标题翻译：血压计CUFF
公开(公告)号：US20130102910A1
公开(公告)日：2013-04-25
申请号：US13808082
申请日：2011-07-05
申请人： Jong-Eun Park , Jae-Soon Cha
发明人： Jong-Eun Park , Jae-Soon Cha
IPC分类号： A61B5/022
CPC分类号： A61B5/02233 , A61B5/022
摘要： A cuff for a blood pressure meter which is jointed to a blood pressure for measuring blood pressure and is worn on the body to compress a blood pressure measurement site, and which comprises: a cuff band which is worn around the blood pressure measurement site of the body and is provided with an expansion bladder that expands on the inside; a fluid supply apparatus which is connected to the cuff band and supplies a fluid so as to make the expansion bladder expand; and a bladder separator which is provided in the cuff band and splits the expansion bladder, that is expanded by means of the fluid supply apparatus, into at least two or more pats so as to effect split expansion of the same. When the present invention is employed, because the expansion bladder which compresses the blood pressure measurement site is split by means of the ladder separator, there is the advantageous effect that it expands and contracts to a length and width that match the firth of the blood pressure measurement site and accurate blood pressure measurement can be taken.
摘要翻译：一种用于血压计的袖带，其连接到用于测量血压的血压并佩戴在身体上以压缩血压测量部位，并且包括：围绕血压测量部位周围的袖带，并且设置有在内侧膨胀的膨胀囊; 流体供应装置，其连接到袖带并且供应流体以使膨胀囊膨胀; 以及膀胱分离器，其设置在所述袖带中，并且将所述膨胀囊分离成膨胀囊，所述膨胀囊通过所述流体供给装置膨胀成至少两个或更多个，以实现所述膨胀囊的分裂膨胀。当采用本发明时，由于压缩血压测量部位的膨胀囊通过梯形分离器分离，所以有利的效果是它膨胀并收缩到与血压的比例相匹配的长度和宽度可以进行测量部位和精确的血压测量。

6. 发明申请

US20100140733A1 Back-side illuminated image sensor 审中-公开
标题翻译：背面照明图像传感器
公开(公告)号：US20100140733A1
公开(公告)日：2010-06-10
申请号：US12591912
申请日：2009-12-04
申请人： Yong Jei Lee , Jung Chak Ahn , Jong Eun Park , Dong-Yoon Jang
发明人： Yong Jei Lee , Jung Chak Ahn , Jong Eun Park , Dong-Yoon Jang
IPC分类号： H01L31/02
CPC分类号： H04N5/361 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643
摘要： In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed.
摘要翻译：在示例性实施例中，背面照明图像传感器包括由半导体分隔开的多个光电转换装置的基板。背侧照明传感器还包括形成在基板的表面上的透明电极层或金属层。由于向透明电极层或金属层施加正偏置电压或负偏置电压，因此可以减少或抑制硅衬底的表面中的暗电流的产生。

7. 发明申请

US20070013798A1 Image sensor with shared voltage converter for global shutter operation 审中-公开
标题翻译：具有共享电压转换器的图像传感器，用于全局快门操作
公开(公告)号：US20070013798A1
公开(公告)日：2007-01-18
申请号：US11487283
申请日：2006-07-14
申请人： Jung-Chak Ahn , Yong-Hee Lee , Jong-Eun Park
发明人： Jung-Chak Ahn , Yong-Hee Lee , Jong-Eun Park
IPC分类号： H04N5/335
CPC分类号： H04N5/335
摘要： Each of a plurality of pixels includes a respective photo-converting unit and a respective charge storing unit. The respective photo-converting unit generates respective charge from an image, and the respective charge storing unit stores the respective charge. The respective charges are generated and stored simultaneously, and converted into respective voltages sequentially by a shared voltage converter.
摘要翻译：多个像素中的每一个包括相应的光转换单元和相应的电荷存储单元。相应的光转换单元从图像生成相应的电荷，各个电荷存储单元存储相应的电荷。相应的电荷同时产生和存储，并由共用电压转换器依次转换成各自的电压。

8. 发明授权

US09257462B2 CMOS image sensor for increasing conversion gain 有权
标题翻译： CMOS图像传感器，用于增加转换增益
公开(公告)号：US09257462B2
公开(公告)日：2016-02-09
申请号：US13530334
申请日：2012-06-22
申请人： Young Hwan Park , Jung Chak Ahn , Sang Joo Lee , Jong Eun Park , Young Heub Jang
发明人： Young Hwan Park , Jung Chak Ahn , Sang Joo Lee , Jong Eun Park , Young Heub Jang
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14641
摘要： In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.
摘要翻译：在一个实施例中，图像传感器包括被配置为将光信号转换为光电荷的第一光电二极管，被配置为存储第一光电二极管的光电荷的感测节点，以及被配置为选择性地输出对应于光电荷的电信号的电路感测节点在输出线上。电路连接到至少第一导电接点，输出线设置在感测节点和第一导电接点之间。

9. 发明申请

US20130015324A1 CMOS IMAGE SENSOR 有权
标题翻译： CMOS图像传感器
公开(公告)号：US20130015324A1
公开(公告)日：2013-01-17
申请号：US13530334
申请日：2012-06-22
申请人： Young Hwan Park , Jung Chak Ahn , Sang Joo Lee , Jong Eun Park , Young Heub Jang
发明人： Young Hwan Park , Jung Chak Ahn , Sang Joo Lee , Jong Eun Park , Young Heub Jang
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14603 , H01L27/14641
摘要： In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.
摘要翻译：在一个实施例中，图像传感器包括被配置为将光信号转换为光电荷的第一光电二极管，被配置为存储第一光电二极管的光电荷的感测节点，以及被配置为选择性地输出对应于光电荷的电信号的电路感测节点在输出线上。电路连接到至少第一导电接点，输出线设置在感测节点和第一导电接点之间。

10. 发明申请

US20080182354A1 METHODS OF FABRICATING CMOS IMAGE SENSORS 审中-公开
标题翻译：制作CMOS图像传感器的方法
公开(公告)号：US20080182354A1
公开(公告)日：2008-07-31
申请号：US11950249
申请日：2007-12-04
申请人： Jong-Jin Lee , Ju-Hyun Ko , Jong-Eun Park , Hyun-Suk Kim , Dong-Yoon Jang
发明人： Jong-Jin Lee , Ju-Hyun Ko , Jong-Eun Park , Hyun-Suk Kim , Dong-Yoon Jang
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1463 , H01L27/14681 , H01L27/14689
摘要： CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.
摘要翻译：公开了CMOS图像传感器和制造CMOS图像传感器的相关方法。 CMOS图像传感器的制造可以包括在半导体衬底中形成具有第一导电类型的第一杂质区域。在与第一杂质区相邻的半导体衬底中形成具有第二导电类型的第二杂质区。具有第一导电类型的第三杂质区形成在半导体衬底中并位于第二杂质区的下方。传输栅极形成在半导体衬底上并且至少部分地与第一，第二和第三杂质区重叠。光敏元件形成在半导体衬底中并与传输门的一侧相邻。浮动扩散区域形成在半导体衬底中并且位于与传感栅极的与光敏器件相反的一侧。

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