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    • 5. 发明授权
    • Thin film transistor array panel and manufacturing method thereof
    • 薄膜晶体管阵列面板及其制造方法
    • US07884365B2
    • 2011-02-08
    • US12043615
    • 2008-03-06
    • Young-Mi TakSeung-Soo BaekJoo-Ae YounDong-Gyu Kim
    • Young-Mi TakSeung-Soo BaekJoo-Ae YounDong-Gyu Kim
    • H01L29/04H01L31/036H01L31/0376H01L31/20
    • H01L27/1288H01L27/124H01L29/78696
    • A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.
    • TFT阵列面板包括:彼此连接的第一和第二栅极部件; 形成在所述第一和第二栅极部件上的栅极绝缘层; 第一和第二半导体部件分别形成在与第一和第二栅极部件相对的栅极绝缘层上; 第一和第二源元件分别彼此连接并位于第一和第二半导体元件附近; 分别位于第一和第二半导体构件附近并分别相对于第一和第二栅极构件相对于第一和第二源构件定位的第一和第二排出构件; 以及连接到第一和第二漏极部件的像素电极。 第一栅极,半导体,源极和漏极部件形成第一TFT,第二栅极,半导体,源极和漏极部件形成第二TFT。