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    • 1. 发明申请
    • TUNNELING-RESISTOR-JUNCTION-BASED MICROSCALE/NANOSCALE DEMULTIPLEXER ARRAYS
    • 基于隧道式电阻器的微阵列/纳米解复用器阵列
    • US20070176801A1
    • 2007-08-02
    • US11343325
    • 2006-01-30
    • Warren RobinettGregory SniderDuncan StewartJoseph Straznicky
    • Warren RobinettGregory SniderDuncan StewartJoseph Straznicky
    • H03M7/00
    • G11C8/10G11C13/0023H03M13/51
    • Various embodiments of the present invention are directed to demultiplexers that include tunneling resistor nanowire junctions, and to nanowire addressing methods for reliably addressing nanowire signal lines in nanoscale and mixed-scale demultiplexers. In one embodiment of the present invention, an encoder-demultiplexer comprises a number of input signal lines and an encoder that generates an n-bit-constant-weight-code code-word internal address for each different input address received on the input signal lines. The encoder-demultiplexer includes n microscale signal lines on which an n-bit-constant-weight-code code-word internal address is output by the encoder, where each microscale signal line carries one bit of the n-bit-constant-weight-code code-word internal address. The encoder-demultiplexer also includes a number of encoder-demultiplexer-addressed nanowire signal lines interconnected with the n microscale signal lines via tunneling resistor junctions, the encoder-demultiplexer-addressed nanowire signal lines each associated with an n-bit-constant-weight-code code-word internal address.
    • 本发明的各种实施例涉及包括隧穿电阻器纳米线结的解复用器,以及纳米线寻址方法,用于在纳米尺度和混合尺度解复用器中可靠地寻址纳米线信号线。 在本发明的一个实施例中,编码器 - 解复用器包括多个输入信号线和一个编码器,其生成在输入信号线上接收的每个不同输入地址的n位恒权重码码字内部地址 。 编码器 - 解复用器包括n个微米级信号线,编码器输出n位恒定权重码码字内部地址,其中每个微信号线承载n位恒权重码内部地址的一位, 代码字内部地址。 编码器 - 解复用器还包括通过隧道电阻器结与n个微米级信号线互连的多个编码器 - 解复用器寻址的纳米线信号线,编码器 - 解复用器寻址的纳米线信号线每个与n比特恒权重信号线相关联, 代码字内部地址。
    • 4. 发明授权
    • Optical broadcast with buses with shared optical interfaces
    • 具有共享光接口的总线的光广播
    • US08687961B2
    • 2014-04-01
    • US13126840
    • 2008-10-31
    • Michael Renne Ty TanJoseph StraznickyPaul Kessler Rosenberg
    • Michael Renne Ty TanJoseph StraznickyPaul Kessler Rosenberg
    • H04B10/00
    • H04B10/278H04B10/2755
    • Various embodiments of the present invention are directed to optical broadcast buses configured with shared optical interfaces for fan-in and fan-out of optical signals. In one aspect, an optical broadcast bus comprises a number of optical interfaces, a fan-in bus optically coupled to the number of optical interfaces, and a fan-out bus optically coupled to the number of optical interfaces. Each optical interface is configured to convert an electrical signal produced by the at least one node into an optical signal that is received and directed by the fan-in bus to the fan-out bus and broadcast by the fan-out bus to the number of optical interfaces. Each optical interface also converts the optical signal into an electrical signal that is sent to the electronically coupled at least one node for processing.
    • 本发明的各种实施例涉及配置有用于光信号的扇入和扇出的共享光接口的光广播总线。 在一个方面,光学广播总线包括多个光学接口,光耦合到多个光学接口的扇入总线,以及光耦合到多个光学接口的扇出总线。 每个光学接口被配置为将由至少一个节点产生的电信号转换成由扇入总线接收和引导到扇出总线的光信号,并且由扇出总线广播到 光接口。 每个光学接口还将光学信号转换成电信号,该电信号被发送到电子耦合的至少一个节点进行处理。
    • 5. 发明申请
    • Method and system for reading the resistance state of junctions in crossbar memory
    • 用于读取交叉记忆体中结点电阻状态的方法和系统
    • US20060129340A1
    • 2006-06-15
    • US11010597
    • 2004-12-13
    • Joseph Straznicky
    • Joseph Straznicky
    • G01R27/00
    • G11C13/0014B82Y10/00G11C13/02G11C2213/77G11C2213/81
    • Various embodiments of the present invention are directed to methods for determining the resistance state of nanowire-crossbar junctions, and can also be used to determine the resistance state of sub-microscale crossbar junctions. A pair of wires interconnected through the crossbar junction is biased to determine a first signal for the crossbar junction. The pair of wires interconnected through the crossbar junction is then biased again to increase the resistance of the crossbar junction. The pair of wires interconnected through the crossbar junction is then biased again to determine a second signal for the crossbar junction. The first signal is compared to the second signal to determine the resistance state of the crossbar junction.
    • 本发明的各种实施方案涉及用于确定纳米线 - 交叉连接点的电阻状态的方法,并且还可以用于确定亚微米横截面结的电阻状态。 通过交叉连接点互连的一对导线被偏置以确定交叉连接点的第一信号。 然后通过交叉连接点互连的一对电线被再次偏置以增加交叉连接点的电阻。 然后通过交叉连接点互连的一对导线再次被偏置以确定交叉连接点的第二信号。 将第一信号与第二信号进行比较以确定交叉连接点的电阻状态。
    • 6. 发明申请
    • Optical Broadcast With Buses With Shared Optical Interfaces
    • 具有共享光接口的公共汽车的光学广播
    • US20110211843A1
    • 2011-09-01
    • US13126840
    • 2008-10-31
    • Michael Renne Ty TanJoseph StraznickyPaul Kessler Rosenberg
    • Michael Renne Ty TanJoseph StraznickyPaul Kessler Rosenberg
    • H04B10/12H04B10/04H04B10/06
    • H04B10/278H04B10/2755
    • Various embodiments of the present invention are directed to optical broadcast buses configured with shared optical interfaces for fan-in and fan-out of optical signals. In one aspect, an optical broadcast bus (100,200,300) comprises a number of optical interfaces (121-123,210,212,216,218,301-303), a fan-in bus (102,202) optically coupled to the number of optical interfaces, and a fan-out bus (104,204) optically coupled to the number of optical interfaces. Each optical interface is configured to convert an electrical signal produced by the at least one node into an optical signal that is received and directed by the fan-in bus to the fan-out bus and broadcast by the fan-out bus to the number of optical interfaces. Each optical interface also converts the optical signal into an electrical signal that is sent to the electronically coupled at least one node for processing.
    • 本发明的各种实施例涉及配置有用于光信号的扇入和扇出的共享光接口的光广播总线。 一方面,光广播总线(100,200,300)包括多个光接口(121-123,210,212,216,218,301-303),光耦合到多个光接口的扇入总线(102,202)和扇出总线(104,204) )光耦合到光接口的数量。 每个光学接口被配置为将由至少一个节点产生的电信号转换成由扇入总线接收和引导到扇出总线的光信号,并且由扇出总线广播到 光接口。 每个光学接口还将光学信号转换成电信号,该电信号被发送到电子耦合的至少一个节点进行处理。
    • 9. 发明授权
    • Method and system for reading the resistance state of junctions in crossbar memory
    • 用于读取交叉记忆体中结点电阻状态的方法和系统
    • US07340356B2
    • 2008-03-04
    • US11010597
    • 2004-12-13
    • Joseph Straznicky
    • Joseph Straznicky
    • G01R25/00
    • G11C13/0014B82Y10/00G11C13/02G11C2213/77G11C2213/81
    • Various embodiments of the present invention are directed to methods for determining the resistance state of nanowire-crossbar junctions, and can also be used to determine the resistance state of sub-microscale crossbar junctions. A pair of wires interconnected through the crossbar junction is biased to determine a first signal for the crossbar junction. The pair of wires interconnected through the crossbar junction is then biased again to increase the resistance of the crossbar junction. The pair of wires interconnected through the crossbar junction is then biased again to determine a second signal for the crossbar junction. The first signal is compared to the second signal to determine the resistance state of the crossbar junction.
    • 本发明的各种实施方案涉及用于确定纳米线 - 交叉连接点的电阻状态的方法,并且还可以用于确定亚微米交叉点结的电阻状态。 通过交叉连接点互连的一对导线被偏置以确定交叉连接点的第一信号。 然后通过交叉连接点互连的一对电线被再次偏置以增加交叉连接点的电阻。 然后通过交叉连接点互连的一对导线再次被偏置以确定交叉连接点的第二信号。 将第一信号与第二信号进行比较以确定交叉连接点的电阻状态。