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1. 外观设计

USD971151S1 Charging plug 有权
公开(公告)号：USD971151S1
公开(公告)日：2022-11-29
申请号：US29741645
申请日：2020-07-14
申请人： Jui Lung Chen
设计人： Jui Lung Chen

2. 发明授权

US07916519B2 Burn-in methods for static random access memories and chips 有权
标题翻译：静态随机存取存储器和芯片的老化方法
公开(公告)号：US07916519B2
公开(公告)日：2011-03-29
申请号：US12368218
申请日：2009-02-09
申请人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
发明人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
IPC分类号： G11C11/00
CPC分类号： G11C29/02 , G11C11/41 , G11C29/025
摘要： A burn-in method for SRAMs and chips. For a memory cell of the SRAM, the SRAM burn-in method controls the control signals of the memory cell to generate current paths to pass through the memory cell, the corresponding bit-line and the corresponding bit-line-bar. The contacts/vias in the current paths are tested by providing burn-in currents to flow through the current paths, so that mismatched contacts/vias are burned by the burn-in currents. SRAMs that fail the burn-in test are abandoned after the burn-in procedure.
摘要翻译：一种SRAM和芯片的老化方法。对于SRAM的存储单元，SRAM老化方法控制存储器单元的控制信号，以产生通过存储单元，对应位线和相应位线条的电流路径。通过提供老化电流流过电流路径来测试电流路径中的触点/通孔，从而使不匹配的触点/通孔被老化电流烧毁。老化测试失败的SRAM在老化过程之后被放弃。

3. 发明申请

US20100202219A1 BURN-IN METHODS FOR STATIC RANDOM ACCESS MEMORIES AND CHIPS 有权
标题翻译：用于静态随机存取存储器和存储器的烧录方法
公开(公告)号：US20100202219A1
公开(公告)日：2010-08-12
申请号：US12368218
申请日：2009-02-09
申请人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
发明人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
IPC分类号： G11C7/00 , G11C29/00
CPC分类号： G11C29/02 , G11C11/41 , G11C29/025
摘要： A burn-in method for SRAMs and chips. For a memory cell of the SRAM, the SRAM burn-in method controls the control signals of the memory cell to generate current paths to pass through the memory cell, the corresponding bit-line and the corresponding bit-line-bar. The contacts/vias in the current paths are tested by providing burn-in currents to flow through the current paths, so that mismatched contacts/vias are burned by the burn-in currents. SRAMs that fail the burn-in test are abandoned after the burn-in procedure.
摘要翻译：一种SRAM和芯片的老化方法。对于SRAM的存储单元，SRAM老化方法控制存储器单元的控制信号，以产生通过存储单元，对应位线和相应位线条的电流路径。通过提供老化电流流过电流路径来测试电流路径中的触点/通孔，从而使不匹配的触点/通孔被老化电流烧毁。老化测试失败的SRAM在老化过程之后被放弃。

4. 发明申请

US20050104129A1 Semiconductor programmable device 审中-公开
标题翻译：半导体可编程器件
公开(公告)号：US20050104129A1
公开(公告)日：2005-05-19
申请号：US10817777
申请日：2004-04-02
申请人： Jui-Lung Chen , Yang-Chen Hsu , Chien-Jiun Wang
发明人： Jui-Lung Chen , Yang-Chen Hsu , Chien-Jiun Wang
IPC分类号： H01L27/06 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L27/0629
摘要： A semiconductor programmable device is provided. The semiconductor programmable device comprises a P-type substrate, an N-well, an NMOS capacitor and a PMOS transistor. The N-well is formed in the P-type substrate. The NMOS capacitor is configured on the P-type substrate. The PMOS transistor is configured on the N-well. A source/drain of the PMOS transistor is electrically connected to a gate of the NMOS capacitor. A control voltage is applied to a gate of the PMOS transistor. A programming voltage is applied to the source/drain of the PMOS transistor. The programming voltage is large enough to cause a breakdown of a gate oxide layer of the NMOS capacitor. The gate oxide layer of the NMOS capacitor has a thickness identical to the gate oxide layer of the PMOS transistor.
摘要翻译：提供半导体可编程器件。半导体可编程器件包括P型衬底，N阱，NMOS电容器和PMOS晶体管。在P型衬底中形成N阱。 NMOS电容器配置在P型基板上。 PMOS晶体管配置在N阱上。 PMOS晶体管的源极/漏极电连接到NMOS电容器的栅极。控制电压施加到PMOS晶体管的栅极。对PMOS晶体管的源极/漏极施加编程电压。编程电压足够大，导致NMOS电容器的栅极氧化层的击穿。 NMOS电容器的栅极氧化层具有与PMOS晶体管的栅氧化层相同的厚度。

5. 发明授权

US09979216B1 High-power charging plug 有权
公开(公告)号：US09979216B1
公开(公告)日：2018-05-22
申请号：US15466795
申请日：2017-03-22
申请人： Jui Lung Chen
发明人： Jui Lung Chen
IPC分类号： H02J7/00 , B60L11/18 , H01R13/633 , H01R13/447 , H01R13/502 , H01R24/28 , H01R107/00
CPC分类号： H02J7/0045 , B60L11/1818 , H01R13/447 , H01R13/6335 , H01R24/28 , H01R25/003 , H01R2107/00 , H01R2201/26
摘要： A high-power charging plug is disclosed. The charging plug comprises a case body having an installation cavity disposed therein, installation holes disposed at both sides thereof, front terminal holes disposed on a front side thereof, and back terminal holes disposed on a back side thereof; a terminal set including a plurality of independent terminals having one-piece front terminals and back terminals, a pull ring component including a pull ring, rivets, and rivet sleeves. The charging plug is not only a plug but also a socket. Another charging plug can be plugged into the socket on the charging plug in use to charge multiple products at the same time. It is convenient and practical.

6. 发明申请

US20120081826A1 Poly Fuse Burning System 有权
标题翻译：保险丝燃烧系统
公开(公告)号：US20120081826A1
公开(公告)日：2012-04-05
申请号：US13047567
申请日：2011-03-14
申请人： Jui-Lung Chen , Tien-Hui Huang , Chieh-Yao Chuang
发明人： Jui-Lung Chen , Tien-Hui Huang , Chieh-Yao Chuang
IPC分类号： H02H5/04
CPC分类号： G11C17/16
摘要： This invention provides a poly fuse burning system comprising a poly fuse, a controllable power source supplying power for burning the poly fuse, and a monitor circuit monitoring the burning state of the poly fuse, wherein when a targeted burning state is reached, a control signal is output to shut down the controllable power source to stop the burning.
摘要翻译：本发明提供一种多熔丝燃烧系统，包括多晶硅熔丝，提供用于燃烧多晶硅熔丝的功率的可控电源，以及监控多晶硅熔丝的燃烧状态的监控电路，其中当达到目标燃烧状态时，控制信号输出关闭可控电源以停止燃烧。

7. 发明申请

US20100315852A1 MEMORY AND STORAGE DEVICE UTILIZING THE SAME 有权
标题翻译：使用该存储器和存储器件的存储器和存储器件
公开(公告)号：US20100315852A1
公开(公告)日：2010-12-16
申请号：US12484088
申请日：2009-06-12
申请人： Jui-Lung Chen
发明人： Jui-Lung Chen
IPC分类号： G11C5/02 , G11C7/00
CPC分类号： G11C8/08 , G11C17/12 , G11C2207/005
摘要： A storage device including a memory and a reading circuit is disclosed. The memory includes a plurality of word lines, a first bit line, a second bit line, a third bit line, and a plurality of cells. The word lines are sequentially disposed in parallel. The first, the second, and the third bit lines are sequentially disposed in parallel and vertical with the word lines. Each cell corresponds to one word line and one bit line. The word line, which corresponds to the cell corresponding to the first bit line, differs from the word line, which corresponds to the cell corresponding to the second bit line. The read circuit is coupled to the memory for reading the data stored in the memory.
摘要翻译：公开了一种包括存储器和读取电路的存储装置。存储器包括多个字线，第一位线，第二位线，第三位线和多个单元。字线顺序地并列设置。第一，第二和第三位线与字线平行且垂直地顺序地布置。每个单元对应一个字线和一个位线。对应于与第一位线对应的单元的字线与对应于第二位线的单元的字线不同。读取电路耦合到存储器，用于读取存储在存储器中的数据。

8. 发明申请

US20100177556A1 ASYMMETRIC STATIC RANDOM ACCESS MEMORY 审中-公开
标题翻译：不对称静态随机存取存储器
公开(公告)号：US20100177556A1
公开(公告)日：2010-07-15
申请号：US12351772
申请日：2009-01-09
申请人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
发明人： Jui-Lung Chen , Wei-Shung Chen , Yi-Hsun Chung , Chia-Chiuan Chang
IPC分类号： G11C11/00 , G11C5/14
CPC分类号： G11C11/412
摘要： An asymmetric static random access memory (SRAM) device that includes at least one SRAM cell is provided. The SRAM cell includes the first inverter and the second inverter. The first inverter is coupled between a first power and a ground power, and includes a first output terminal coupled to a first node and a first input terminal coupled to a second node. The second inverter is coupled between the first power and the ground power, and includes a second input terminal coupled to the first node and a second output terminal coupled to the second node. When the first inverter and the second inverter receive current from the first power, the SRAM cell is programmed to a predetermined value in advance according to different conductance levels of the first inverter and the second inverter.
摘要翻译：提供了包括至少一个SRAM单元的非对称静态随机存取存储器（SRAM）器件。 SRAM单元包括第一反相器和第二反相器。第一反相器耦合在第一功率和地功率之间，并且包括耦合到第一节点的第一输出端和耦合到第二节点的第一输入端。第二反相器耦合在第一电源和地电之间，并且包括耦合到第一节点的第二输入端和耦合到第二节点的第二输出端。当第一逆变器和第二逆变器从第一功率接收电流时，根据第一逆变器和第二逆变器的不同电导电平，预先将SRAM单元编程为预定值。

9. 发明申请

US20090141534A1 DETECTION APPARATUS AND METHOD FOR SEQUENTIALLY PROGRAMMING MEMORY 审中-公开
标题翻译：用于顺序编程存储器的检测装置和方法
公开(公告)号：US20090141534A1
公开(公告)日：2009-06-04
申请号：US12191129
申请日：2008-08-13
申请人： Chia-Chiuan CHANG , Jui-Lung Chen , Yi-Hsun Chung , Wei-Shung Chen
发明人： Chia-Chiuan CHANG , Jui-Lung Chen , Yi-Hsun Chung , Wei-Shung Chen
IPC分类号： G11C17/16 , G11C7/00 , G11C8/00
CPC分类号： G11C5/143 , G11C8/08 , G11C17/18
摘要： A detection apparatus for sequentially programming a memory is provided. The detection apparatus comprises a current sensor and a programming controller. The current sensor is coupled to a programming source and a memory cell. The current sensor detects change of a programming current between the programming source and the memory cell and generates a control signal according to the detection result. The programming controller is coupled to the current sensor. The programming controller receives the control signal and generates a programming state signal.
摘要翻译：提供了一种用于顺序编程存储器的检测装置。检测装置包括电流传感器和编程控制器。电流传感器耦合到编程源和存储器单元。电流传感器检测编程电源和存储单元之间的编程电流的变化，并根据检测结果生成控制信号。编程控制器耦合到电流传感器。编程控制器接收控制信号并产生编程状态信号。

10. 发明申请

US20060001241A1 Stroller backrest tilting adjusting device 有权
公开(公告)号：US20060001241A1
公开(公告)日：2006-01-05
申请号：US10940086
申请日：2004-09-14
申请人： Jui-Lung Chen
发明人： Jui-Lung Chen
IPC分类号： B60N2/02
CPC分类号： B62B9/104 , B62B9/102
摘要： A stroller backrest tilting adjusting device is provided. The stroller backrest tilting adjusting device comprises two supporting straps for supporting the backrest of the stroller, each supporting strap having a fixed end attached to a frame of the stroller and a free end; a strap direction guiding unit allowing the free end of each of the straps to pass therethrough and guiding the straps' direction; and an adjusting assembly fixed to an upper portion of the backrest which is capable of adjusting the effective supporting length of the straps to thereby adjusting the tilting angle of the backrest of the stroller by operating a one-way locking member, which is disposed in the adjusting assembly and has a cam effecting portion for increasingly exerting locking force.

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