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    • 2. 发明申请
    • ROTATION ASSISTANCE MECHANISM AND ROTATING POWER MECHANISM EQUIPPED WITH SAME
    • 旋转辅助机构和旋转功率机构
    • US20150222149A1
    • 2015-08-06
    • US14424325
    • 2013-08-23
    • Kazuhiko Nakamura
    • Kazuhiko Nakamura
    • H02K1/06
    • H02K1/06F03G7/10H02K53/00Y10S74/09
    • A rotation assistance mechanism equipped with an attraction unit having a pair of magnetic bodies for which the opposite poles of the bodies are arranged facing one another. A magnetic body driving unit changes the distance between the pair of magnetic bodies with a prescribed period by means of the rotation of a rear wheel. A shielding unit has a pair of magnetic surfaces, the poles of which are the same as the respective opposing surfaces of the pair of magnetic bodies. A shield-driving unit that, in conjunction with the prescribed period, propels the shielding unit into the interval between the pair of magnetic bodies when the distance between the pair of magnetic bodies is reduced, and retracts the shielding unit from the interval between the pair of magnetic bodies when the distance between the pair of magnetic bodies is increased.
    • 一种旋转辅助机构,其配备有具有一对磁体的吸引单元,所述一对磁体的主体的相对极彼此相对布置。 磁体驱动单元通过后轮的旋转以规定的时间间隔改变一对磁体之间的距离。 屏蔽单元具有一对磁性表面,其磁极与该对磁体的相应的相对表面相同。 一种屏蔽驱动单元,当所述一对磁体之间的距离减小时,与所述规定期间一起,将所述屏蔽单元推进到所述一对磁体之间的间隔中,并且将所述屏蔽单元从所述一对磁体之间的间隔缩回 当一对磁体之间的距离增加时磁体的位置。
    • 8. 发明授权
    • Switching circuit and imaging apparatus utilizing the same
    • 开关电路和利用其的成像装置
    • US08405445B2
    • 2013-03-26
    • US12470662
    • 2009-05-22
    • Kazuhiko NakamuraYutaka MutoKiyotaka Kogo
    • Kazuhiko NakamuraYutaka MutoKiyotaka Kogo
    • G01N30/86
    • H03K17/6877H03K2217/0036
    • In a complementary-MOSFET driving circuit for driving the charge multiplication gate of an EM-CCD, a ferrite bead is connected to a conduction-termination direction diode in parallel thereto, the conduction-termination direction diode being inserted into the gate electrodes of complementary MOSFETs in series therewith, the impedance of the ferrite bead at a switching frequency being lower than one-half of the gate-electrode impedance of the MOSFETs, a time during which the MOSFETs are brought into simultaneous conduction being shorter than ¼th of the switching period, the impedance of the ferrite bead at a frequency equivalent to ¼th of the switching period being higher than 2 times the gate-electrode impedance of the MOSFETs, a ferrite bead being connected to the drain electrodes of the complementary MOSFETs in series therewith, the impedance of the ferrite bead at the switching frequency being lower than one-half of the impedance of a capacitive load at the switching frequency, and the impedance of the ferrite bead, at a frequency equivalent to ¼th of the switching period being higher than 2 times the impedance of the capacitive load.
    • 在用于驱动EM-CCD的电荷倍增极的互补MOSFET驱动电路中,铁氧体磁珠与导通终端方向二极管并联连接,导通终端方向二极管插入互补MOSFET的栅电极 与开关频率相比,铁氧体磁珠的阻抗低于MOSFET的栅电极阻抗的二分之一,MOSFET进入同时导通的时间短于开关周期的1/4, 铁氧体磁珠的阻抗在等于开关周期的1/4的频率下高于MOSFET的栅电极阻抗的2倍,铁氧体磁珠连接到与其串联的互补MOSFET的漏电极,阻抗 开关频率下的铁氧体磁珠低于开关频率下的电容负载的阻抗的二分之一 在等于开关周期的1/4的频率的铁氧体磁珠的阻抗高于容性负载的阻抗的2倍。