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1. 发明授权

US08926752B2 Method of producing a group III nitride crystal 有权
标题翻译：制造III族氮化物晶体的方法
公开(公告)号：US08926752B2
公开(公告)日：2015-01-06
申请号：US12526685
申请日：2008-02-27
申请人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
发明人： Akinori Koukitu , Yoshinao Kumagai , Toru Nagashima , Kazuya Takada , Hiroyuki Yanagi
IPC分类号： C30B25/00 , C30B29/40 , C30B25/10 , C30B25/18
CPC分类号： C30B29/403 , C30B25/10 , C30B25/18
摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.
摘要翻译：提供了一种能够通过仅使用HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，其中可以使用便宜的原料来降低生产成本，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层，通过在1200℃以上的温度下加热的基板上的中间层上气相生长进一步生长III族氮化物晶体。

2. 发明申请

US20120240845A1 PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL 审中-公开
标题翻译：硝酸铝单晶的生产方法
公开(公告)号：US20120240845A1
公开(公告)日：2012-09-27
申请号：US13512627
申请日：2010-11-29
申请人： Hiroyuki Fukuyama , Masanobu Azuma , Kazuya Takada , Takeshi Hattori
发明人： Hiroyuki Fukuyama , Masanobu Azuma , Kazuya Takada , Takeshi Hattori
IPC分类号： C30B25/14 , C30B25/16
CPC分类号： C30B29/403 , C30B23/00 , C30B23/007 , C30B25/00 , C30B29/62
摘要： Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that, at least a part of the carbon body does not directly contact with the raw material gas generation source, at least a part of the raw material gas generation source does not directly contact with the carbon body, the raw material gas generation source and the carbon body are positioned to make a space in which a clearance between the raw material gas generation source, which does not contact with the carbon body, and the carbon body, which does not contact with the raw material gas generation source, is 0.01 to 50 mm, and a heat temperature and a nitrogen gas flow rate are set so as to satisfy a condition for aluminum nitride deposition in a space between the raw material gas generation source, which does not contact with carbon body, and the carbon body, which does not contact with raw material gas generation source.
摘要翻译：公开了一种新颖的方法，其中具有良好结晶度的氮化铝单晶被有效且容易地制造。在生成铝气体或氧化铝气体的原料气体发生源的存在下生成氮气的氮化铝单晶的制造方法和碳体，然后生长氮化铝单晶在加热条件下其特征在于，所述碳体的至少一部分不与所述原料气体发生源直接接触，所述原料气体发生源的至少一部分不与碳体直接接触，所述原料气体产生源并且碳体被定位成使与未与碳体接触的原料气体发生源与不与原料气体发生源接触的碳体之间的间隙为0.01的空间至50mm，并且设定加热温度和氮气流量以满足与碳体不接触的原料气体发生源与碳体之间的空间中的氮化铝沉积的条件，其不与原料气体发生源接触。

3. 发明申请

US20120223329A1 Production Method of a Layered Body 有权
标题翻译：分层体的生产方法
公开(公告)号：US20120223329A1
公开(公告)日：2012-09-06
申请号：US13508747
申请日：2010-11-09
申请人： Toru Kinoshita , Kazuya Takada
发明人： Toru Kinoshita , Kazuya Takada
IPC分类号： H01L29/20 , H01L21/205
CPC分类号： H01L21/0262 , C30B25/16 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02587 , H01L21/02658
摘要： Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method. The method for producing a laminate comprises: a pretreatment step in which an oxygen source gas is supplied onto the sapphire substrate; a first growth step in which an initial single crystal layer that contains oxygen at a concentration of 5×1020 cm−3 or more but 5×1021 cm−3 or less is grown with a thickness of 3 nm or more but less than 15 nm by supplying the oxygen source gas onto the sapphire substrate together with a starting material gas for the growth of the group III nitride; and a second growth step in which a group III nitride single crystal layer that is reduced in the oxygen concentration in comparison to the initial single crystal layer is grown by supplying the starting material gas onto the initial single crystal layer without supplying the oxygen source thereto, or alternatively by supplying the oxygen source, together with the starting material gas, at a lower supply rate than that in the first growth step.
摘要翻译：公开了蓝宝石衬底上III族极性生长的新方法。具体公开了通过MOCVD法在蓝宝石基板上层叠III族氮化物单晶层的层叠体的制造方法。层叠体的制造方法包括：将氧源气体供给到蓝宝石基板上的预处理工序; 第一生长步骤，其中生长浓度为5×1020cm-3或5×1021cm-3以下的氧的初始单晶层，其厚度为3nm以上且小于15nm 通过将氧源气体与用于生长III族氮化物的原料气体一起供应到蓝宝石衬底上; 以及第二生长步骤，其中与初始单晶层相比，氧浓度降低的III族氮化物单晶层通过将原料气体供应到初始单晶层而不向其供应氧而生长，或者以比起第一生长步骤更低的供给速率与原料气体一起供给氧源。

4. 发明授权

US08137825B2 Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof 失效
标题翻译：氮化铝单晶膜，氮化铝单晶多层基板及其制造方法
公开(公告)号：US08137825B2
公开(公告)日：2012-03-20
申请号：US11989841
申请日：2006-08-01
申请人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
发明人： Hiroyuki Fukuyama , Kazuya Takada , Akira Hakomori
IPC分类号： B32B9/00
CPC分类号： C30B29/403 , C30B1/10 , C30B25/02
摘要： In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.
摘要翻译：在通过在碳，氮和一氧化碳的存在下加热蓝宝石衬底而在衬底上制造氮化铝单晶膜的方法，与原料蓝宝石衬底和形成的氮化铝单晶不同的铝化合物在反应体系中存在控制加热气氛中的铝的浓度如氮化铝或氧化铝以促进还原氮化反应。提供了在蓝宝石衬底的表面上具有氮化铝单晶膜的氮化铝单晶多层衬底，其中所述氮化铝单晶具有改善的结晶度和低密度缺陷。

5. 发明申请

US20110094438A1 LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：层压体及其生产方法
公开(公告)号：US20110094438A1
公开(公告)日：2011-04-28
申请号：US12812872
申请日：2009-01-09
申请人： Akinori Koukitu , Yoshinao Kumagai , Masanari Ishizuki , Toru Nagashima , Akira Hakomori , Kazuya Takada
发明人： Akinori Koukitu , Yoshinao Kumagai , Masanari Ishizuki , Toru Nagashima , Akira Hakomori , Kazuya Takada
IPC分类号： C30B25/10
CPC分类号： C30B25/18 , C30B25/183 , C30B29/403
摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.
摘要翻译：本发明提供一种自支撑基板，其通过以下步骤获得：在由无机物的单晶制成的基底基板上形成厚度在3〜200nm范围内的Al系III族氮化物薄层在惰性气体气氛中在800℃下基本上不分解的物质，当与800-1600℃的温度范围内的还原气体例如蓝宝石接触时，其通过分解产生挥发物; 通过在800-1600℃的温度范围内在含有氨的还原气体气氛中热处理层压基板，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙加油站; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其中晶体具有大的曲率半径。

6. 发明申请

US20110022774A1 CACHE MEMORY CONTROL METHOD, AND INFORMATION STORAGE DEVICE COMPRISING CACHE MEMORY 审中-公开
标题翻译：高速缓存存储器控制方法和包含高速缓存存储器的信息存储设备
公开(公告)号：US20110022774A1
公开(公告)日：2011-01-27
申请号：US12784159
申请日：2010-05-20
申请人： Kazuya TAKADA , Kenji YOSHIDA
发明人： Kazuya TAKADA , Kenji YOSHIDA
IPC分类号： G06F12/08 , G06F12/00
CPC分类号： G06F12/0871 , G06F2212/462
摘要： According to a cache memory control method of an embodiment, a data write position in a segment of a cache memory is changed to an address to which a lower bit of a logical block address of write data is added as an offset. Then, even if writing is completed within the segment of the cache memory, the remaining regions of the segment is not wasted.
摘要翻译：根据实施例的高速缓冲存储器控制方法，将高速缓冲存储器的段中的数据写入位置改变为写入数据的逻辑块地址的较低位作为偏移的地址。然后，即使在高速缓冲存储器的段内完成写入，也不浪费段的剩余区域。

7. 发明申请

US20110018104A1 METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译：用于生产具有基于Al的III族氮化物单晶层的层压体的方法，通过该方法生产的层压体，生产使用层合体的基于Al的III族氮化物单晶基板的方法和氮化钛单晶基板
公开(公告)号：US20110018104A1
公开(公告)日：2011-01-27
申请号：US12812885
申请日：2008-12-16
申请人： Toru Nagashima , Akira Hakomori , Kazuya Takada , Masanari Ishizuki , Akinori Koukitu , Yoshinao Kumagai
发明人： Toru Nagashima , Akira Hakomori , Kazuya Takada , Masanari Ishizuki , Akinori Koukitu , Yoshinao Kumagai
IPC分类号： H01L29/20 , C30B23/02 , H01L21/20
CPC分类号： C30B29/403 , C30B25/183 , H01L33/0075 , H01L2924/0002 , H01L2924/00
摘要： The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 μm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage.
摘要翻译：本发明是一种层叠体的制造方法，其特征在于，包括以下工序：（1）制作具有与构成所述Al系III族氮化物单晶层的材料不同的单晶的表面的基底基板要形成（2）在所制备的基板的单晶面上形成厚度为10nm〜1.5μm的Al系III族氮化物单晶层; （3）在Al系III族氮化物单晶层上形成比Al系III族氮化物单晶层厚100倍以上的非单晶层，而不会破坏先前获得的Al基团 -III氮化物单晶层; 和（4）去除基底。该方法提供了可以适合用作用于制造Al基III族氮化物单晶自支撑衬底的基底的衬底，其表面由Al基III族氮化物的单晶形成，并且没有开裂和翘曲。

8. 发明授权

US09297093B2 Layered body having a single crystal layer 有权
标题翻译：具有单晶层的层状体
公开(公告)号：US09297093B2
公开(公告)日：2016-03-29
申请号：US13498344
申请日：2010-09-28
申请人： Toru Kinoshita , Kazuya Takada
发明人： Toru Kinoshita , Kazuya Takada
IPC分类号： B32B15/04 , C30B29/40 , C30B25/18 , H01L21/02 , H01L33/00
CPC分类号： C30B29/403 , C30B25/183 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A layered body having a single crystal layer including a group III nitride having a composition AlxGayInzN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×1020 cm−3 or more and 5×1021 cm−3 or less and a thickness of 15 nm or more and 40 nm or less on the sapphire substrate and a second group III nitride single crystal layer including the group III nitride composition and having a reduced oxygen concentration than the initial single crystal layer.
摘要翻译：具有单晶层的层叠体，其具有Al x Ga y In z N（其中，X，Y和Z分别满足0.9＆nlE; X＆lt; ll; 1.0,0.0＆amp; nlE; Y＆amp; NlE; 0.1,0.0＆amp; NlE; Z＆nlE; 0.1 ，X + Y + Z = 1.0）。层状体包括初始单晶层，其包含III族氮化物组合物，氧浓度为1×1020cm-3以上且5×1021cm-3以下，厚度为15nm以上且40nm以下，或较少的蓝宝石衬底和第二III族氮化物单晶层，其包含III族氮化物组合物，并且具有比初始单晶层更低的氧浓度。

9. 发明申请

US20130214325A1 Method for Manufacturing Optical Element 审中-公开
标题翻译：光学元件制造方法
公开(公告)号：US20130214325A1
公开(公告)日：2013-08-22
申请号：US13881385
申请日：2011-10-17
申请人： Toru Kinoshita , Kazuya Takada
发明人： Toru Kinoshita , Kazuya Takada
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L33/0075 , H01L33/0079
摘要： A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided.
摘要翻译：一种光学元件的制造方法，其特征在于，在具有氮化铝单晶面的氮化铝种子基板上形成氮化铝单晶层作为最上面的工序。通过在氮化铝单晶层上形成光学元件层来制造光学元件用层叠体，从层叠体除去氮化铝种子基板。提供具有作为基板的具有高紫外线透射率和低位错密度的氮化铝单晶层的光学元件。

10. 发明申请

US20110016264A1 METHOD AND APPARATUS FOR CACHE CONTROL IN A DATA STORAGE DEVICE 审中-公开
标题翻译：数据存储设备中缓存控制的方法和装置
公开(公告)号：US20110016264A1
公开(公告)日：2011-01-20
申请号：US12784334
申请日：2010-05-20
申请人： Kenji Yoshida , Tomonori Masuo , Shuichi Ishii , Kunio Utsuki , Kazuya Takada
发明人： Kenji Yoshida , Tomonori Masuo , Shuichi Ishii , Kunio Utsuki , Kazuya Takada
IPC分类号： G06F12/00 , G06F12/02 , G06F12/08
CPC分类号： G06F12/0866 , G06F12/0804
摘要： According to one embodiment, a data storage device is provided, which has a cache controller that performs cache control, by using a buffer memory divided into segments, which are managed. The cache controller performs sequential hit judge on each segment, in accordance with the requested access range designated by a read or write command coming from a host system. The cache controller updates the hit upper-limit LBA set for each segment if the result of the hit judge is a mishit.
摘要翻译：根据一个实施例，提供了一种数据存储装置，其具有通过使用被分割成段的缓冲存储器来执行高速缓存控制的高速缓存控制器。高速缓存控制器根据来自主机系统的读取或写入命令指定的所请求的访问范围，对每个段执行顺序命中判断。如果命中判断的结果是mishit，则缓存控制器更新每个段的命中上限LBA集合。

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