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1. 发明授权

US07939948B2 Interconnect structures with bond-pads and methods of forming bump sites on bond-pads 有权
标题翻译：具有接合焊盘的互连结构和在焊盘上形成凸点位置的方法
公开(公告)号：US07939948B2
公开(公告)日：2011-05-10
申请号：US12409305
申请日：2009-03-23
申请人： Sanh D. Tang , Mark E. Tuttle , Keith R. Cook
发明人： Sanh D. Tang , Mark E. Tuttle , Keith R. Cook
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/04073 , H01L2224/05018 , H01L2224/05026 , H01L2224/05082 , H01L2224/05181 , H01L2224/05187 , H01L2224/05558 , H01L2224/05559 , H01L2224/05571 , H01L2224/05624 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0496 , H01L2924/05042 , H01L2924/14 , H01L2924/04941 , H01L2224/05552
摘要： Microelectronic workpieces that have bump sites over bond-pads and methods of fabricating such bump sites. One embodiment of such a workpiece, for example, includes a substrate having a plurality of microelectronic dies comprising integrated circuitry and bond-pads, such as copper bond-pads, electrically coupled to the integrated circuitry. The workpiece further includes (a) a dielectric structure having a plurality of openings with sidewalls projecting from corresponding bond-pads, and (b) a plurality of caps over corresponding bond-pads. The individual caps can include a discrete portion of a barrier layer attached to the bond-pads and the sidewalls of the openings, and a discrete portion of a cap layer on the barrier layer. The caps are electrically isolated from each other and self-aligned with corresponding bond-pads without forming a mask layer over the cap layer.
摘要翻译：在焊盘上具有凸起部位的微电子工件以及制造这种凹凸点的方法。例如，这种工件的一个实施例包括具有多个微电子管芯的衬底，该多个微电子管芯包括集成电路和电耦合到集成电路的接合焊盘，例如铜接合焊盘。工件还包括（a）具有多个开口的电介质结构，其中侧壁从相应的接合焊盘突出，以及（b）在相应的接合焊盘上的多个盖。各个盖可以包括附着到接合焊盘和开口的侧壁的阻挡层的分立部分，以及阻挡层上的覆盖层的离散部分。盖子彼此电隔离并且与相应的接合焊盘自对准，而不在盖层上形成掩模层。

2. 发明授权

US07528064B2 Interconnect structures with bond-pads and methods of forming bump sites on bond-pads 有权
标题翻译：具有接合焊盘的互连结构和在焊盘上形成凸点位置的方法
公开(公告)号：US07528064B2
公开(公告)日：2009-05-05
申请号：US11872607
申请日：2007-10-15
申请人： Sanh D. Tang , Mark E. Tuttle , Keith R. Cook
发明人： Sanh D. Tang , Mark E. Tuttle , Keith R. Cook
IPC分类号： H01L21/4763
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/04073 , H01L2224/05018 , H01L2224/05026 , H01L2224/05082 , H01L2224/05181 , H01L2224/05187 , H01L2224/05558 , H01L2224/05559 , H01L2224/05571 , H01L2224/05624 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0496 , H01L2924/05042 , H01L2924/14 , H01L2924/04941 , H01L2224/05552
摘要： Microelectronic workpieces that have bump sites over bond-pads and methods of fabricating such bump sites. One embodiment of such a workpiece, for example, includes a substrate having a plurality of microelectronic dies comprising integrated circuitry and bond-pads, such as copper bond-pads, electrically coupled to the integrated circuitry. The workpiece further includes (a) a dielectric structure having a plurality of openings with sidewalls projecting from corresponding bond-pads, and (b) a plurality of caps over corresponding bond-pads. The individual caps can include a discrete portion of a barrier layer attached to the bond-pads and the sidewalls of the openings, and a discrete portion of a cap layer on the barrier layer. The caps are electrically isolated from each other and self-aligned with corresponding bond-pads without forming a mask layer over the cap layer.
摘要翻译：在焊盘上具有凸起部位的微电子工件以及制造这种凹凸点的方法。例如，这种工件的一个实施例包括具有多个微电子管芯的衬底，该多个微电子管芯包括集成电路和电耦合到集成电路的接合焊盘，例如铜接合焊盘。工件还包括（a）具有多个开口的电介质结构，其中侧壁从相应的接合焊盘突出，以及（b）在相应的接合焊盘上的多个盖。各个盖可以包括附着到接合焊盘和开口的侧壁的阻挡层的分立部分，以及阻挡层上的覆盖层的离散部分。盖子彼此电隔离并且与相应的接合焊盘自对准，而不在盖层上形成掩模层。

3. 发明授权

US08349699B2 Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权
标题翻译：在集成电路的制造中形成沟槽隔离的方法和制造集成电路的方法
公开(公告)号：US08349699B2
公开(公告)日：2013-01-08
申请号：US13211174
申请日：2011-08-16
申请人： Robert D. Patraw , Martin Ceredig Roberts , Keith R. Cook
发明人： Robert D. Patraw , Martin Ceredig Roberts , Keith R. Cook
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.
摘要翻译：第一和第二隔离沟槽形成半导体衬底的半导体材料。第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。旋转电介质在第二隔离沟槽内致密化。

4. 发明授权

US08012847B2 Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权
标题翻译：在集成电路的制造中形成沟槽隔离的方法和制造集成电路的方法
公开(公告)号：US08012847B2
公开(公告)日：2011-09-06
申请号：US11097876
申请日：2005-04-01
申请人： Robert D. Patraw , M. Ceredig Roberts , Keith R. Cook
发明人： Robert D. Patraw , M. Ceredig Roberts , Keith R. Cook
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.
摘要翻译：第一和第二隔离沟槽形成半导体衬底的半导体材料。第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。旋转电介质在第二隔离沟槽内致密化。

5. 发明授权

US07387940B2 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry 有权
公开(公告)号：US07387940B2
公开(公告)日：2008-06-17
申请号：US11200286
申请日：2005-08-09
申请人： Gurtej S. Sandhu , Robert D. Patraw , M. Ceredig Roberts , Keith R. Cook
发明人： Gurtej S. Sandhu , Robert D. Patraw , M. Ceredig Roberts , Keith R. Cook
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L27/1052
摘要： The invention includes methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating integrated circuitry including memory circuitry, and integrated circuitry such as memory integrated circuitry.

6. 发明授权

US4850466A Clutch for power door lock actuator 失效
标题翻译：离合器电动门锁致动器
公开(公告)号：US4850466A
公开(公告)日：1989-07-25
申请号：US197070
申请日：1988-05-19
申请人： Deno J. Rogakos , Lynn M. Johnston , Keith R. Cook
发明人： Deno J. Rogakos , Lynn M. Johnston , Keith R. Cook
IPC分类号： E05B47/00 , E05B65/12 , E05B65/20 , F16D43/14 , F16D43/18
CPC分类号： E05B81/25 , F16D43/18 , E05B81/46
摘要： A power door lock actuator includes a one piece molded and centrifugally expandable brake ring that is held on a drive ring to a motor shaft within a lock lift arm driving cup that is freely pivoted to the shaft. A camming member on the drive ring fits within the brake ring so as to retain it to the shaft, to maintain it in a ready position spaced from the cup when stationary, and so as to jam it into the wall of the cup when turning.
摘要翻译：电动门锁致动器包括一体式模制和离心可扩张的制动环，该制动环在可自由枢转到轴的锁提升臂驱动杯内保持在电动机轴的驱动环上。驱动环上的凸轮构件安装在制动环内以便将其保持在轴上，以在静止时将其保持在与杯子间隔开的就绪位置，并且当转动时将其卡入杯子的壁中。

7. 发明授权

US4633153A Power window control with tape drive tension release 失效
标题翻译：电动车窗控制带磁带张紧释放
公开(公告)号：US4633153A
公开(公告)日：1986-12-30
申请号：US832439
申请日：1986-02-24
申请人： Dennis P. Thornton , John S. Maceross , Jeff A. Foust , Keith R. Cook
发明人： Dennis P. Thornton , John S. Maceross , Jeff A. Foust , Keith R. Cook
IPC分类号： E05F15/16 , H02P1/22
CPC分类号： E05F15/695 , E05Y2201/604 , E05Y2201/652 , E05Y2400/32 , E05Y2400/336 , E05Y2400/358 , E05Y2800/407 , E05Y2800/73 , E05Y2900/55
摘要： Motor control apparatus is disclosed for a motor driven vehicle power window mechanism including a flexible drive element, such as a drive tape, adapted to drive the window in a predetermined direction by being placed in tension by the motor. The tension of the flexible drive element is relieved by automatically reversing motor direction for a short time when the window reaches the desired position. The reverse motor rotation is accurately controlled to an amount sufficient to relieve drive tension but insufficient to produce unwanted reverse movement of the window by detecting the pulses of the armature ripple current as the successive commutator bars pass the brushes during reverse motor rotation, integrating these pulses and stopping the reverse motor operation when the integrated value reaches a predetermined reference.
摘要翻译：公开了一种用于电机驱动的车辆电动车窗机构的电动机控制装置，其包括柔性驱动元件，例如驱动带，其适于通过由电动机放置在张力中而沿预定方向驱动窗户。当窗口到达所需位置时，柔性驱动元件的张力可以在短时间内自动反转电动机方向而减轻。反向电动机旋转被精确地控制到足以减轻驱动张力的量，但是当反向电动机旋转期间连续的换向器杆通过电刷时，通过检测电枢纹波电流的脉冲而不足以产生不期望的窗口的反向运动，将这些脉冲并且当积分值达到预定参考值时停止反向电动机操作。

8. 发明授权

US4398704A Vehicle pneumatic suspension system with dead band adjustment 失效
标题翻译：车载气动悬挂系统带死区调整
公开(公告)号：US4398704A
公开(公告)日：1983-08-16
申请号：US342676
申请日：1982-01-26
申请人： Harry C. Buchanan, Jr. , Donald E. Graham , Keith R. Cook , George T. Claude
发明人： Harry C. Buchanan, Jr. , Donald E. Graham , Keith R. Cook , George T. Claude
IPC分类号： B60G11/28 , B60G15/12 , B60G17/015 , B60G17/019 , B60G17/052 , B60G21/10 , F16F9/50
CPC分类号： B60G11/28 , B60G15/12 , B60G17/0155 , B60G17/01933 , B60G17/0521 , B60G21/106 , B60G2202/312 , B60G2202/314 , B60G2202/412 , B60G2204/111 , B60G2400/252 , B60G2401/172 , B60G2500/205 , B60G2600/02 , Y10S280/01
摘要： Pneumatic suspension system for automotive application in which sprung and unsprung masses are supported by variable volume air spring units and incorporating compressor and exhaust valve devices for supplying an exhausting pressurized air from the units to adjust the height between the masses. A Hall effect device effective across a pressure boundary senses the position of a magnet movable within one of the air spring units and reflects relative movement of the sprung and unsprung masses to effect control of the supply and exhaust of air from the units. By axial movement of the Hall device, dead band width can be established to accommodate normal ride motions between sprung and unsprung components. By rotating the Hall device at any axial position, the vehicle bumper height can be selectively increased or decreased.
摘要翻译：用于汽车应用的气动悬挂系统，其中弹簧和簧下质量由可变体积的空气弹簧单元支撑并且包括用于从单元供应排出的加压空气以调节质量之间的高度的压缩机和排气阀装置。在压力边界上有效的霍尔效应装置可感测可在一个空气弹簧单元内移动的磁体的位置，并且反映弹簧和非簧载质量的相对运动，从而实现对来自该单元的空气供应和排出的控制。通过霍尔装置的轴向运动，可以建立死区宽度以适应弹簧和非簧下部件之间的正常行驶运动。通过在任何轴向位置旋转霍尔装置，可以选择性地增加或减少车辆保险杠高度。

9. 发明申请

US20110300689A1 Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry 有权
标题翻译：集成电路制造中形成沟槽隔离的方法和制造集成电路的方法
公开(公告)号：US20110300689A1
公开(公告)日：2011-12-08
申请号：US13211174
申请日：2011-08-16
申请人： Robert D. Patraw , M. Ceredig Roberts , Keith R. Cook
发明人： Robert D. Patraw , M. Ceredig Roberts , Keith R. Cook
IPC分类号： H01L21/762
CPC分类号： H01L21/76229
摘要： First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.
摘要翻译：第一和第二隔离沟槽形成半导体衬底的半导体材料。第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。旋转电介质在第二隔离沟槽内致密化。

10. 发明授权

US07282433B2 Interconnect structures with bond-pads and methods of forming bump sites on bond-pads 有权
标题翻译：具有接合焊盘的互连结构和在焊盘上形成凸点位置的方法
公开(公告)号：US07282433B2
公开(公告)日：2007-10-16
申请号：US11032975
申请日：2005-01-10
申请人： Sanh D. Tang , Mark E. Tuttle , Keith R. Cook
发明人： Sanh D. Tang , Mark E. Tuttle , Keith R. Cook
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/04073 , H01L2224/05018 , H01L2224/05026 , H01L2224/05082 , H01L2224/05181 , H01L2224/05187 , H01L2224/05558 , H01L2224/05559 , H01L2224/05571 , H01L2224/05624 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/0496 , H01L2924/05042 , H01L2924/14 , H01L2924/04941 , H01L2224/05552
摘要： Microelectronic workpieces that have bump sites over bond-pads and methods of fabricating such bump sites. One embodiment of such a workpiece, for example, includes a substrate having a plurality of microelectronic dies comprising integrated circuitry and bond-pads, such as copper bond-pads, electrically coupled to the integrated circuitry. The workpiece further includes (a) a dielectric structure having a plurality of openings with sidewalls projecting from corresponding bond-pads, and (b) a plurality of caps over corresponding bond-pads. The individual caps can include a discrete portion of a barrier layer attached to the bond-pads and the sidewalls of the openings, and a discrete portion of a cap layer on the barrier layer. The caps are electrically isolated from each other and self-aligned with corresponding bond-pads without forming a mask layer over the cap layer.
摘要翻译：在焊盘上具有凸起部位的微电子工件以及制造这种凹凸点的方法。例如，这种工件的一个实施例包括具有多个微电子管芯的衬底，该多个微电子管芯包括集成电路和电耦合到集成电路的接合焊盘，例如铜接合焊盘。工件还包括（a）具有多个开口的电介质结构，其中侧壁从相应的接合焊盘突出，以及（b）在相应的接合焊盘上的多个盖。各个盖可以包括附着到接合焊盘和开口的侧壁的阻挡层的分立部分，以及阻挡层上的覆盖层的离散部分。盖子彼此电隔离并且与相应的接合焊盘自对准，而不在盖层上形成掩模层。

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