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1. 发明授权

US09490104B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US09490104B2
公开(公告)日：2016-11-08
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu Yokogawa , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00 , H01J37/32 , H01L21/324 , H01L21/67
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

2. 发明申请

US20130112670A1 HEAT TREATMENT APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20130112670A1
公开(公告)日：2013-05-09
申请号：US13550638
申请日：2012-07-17
申请人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Ken'etsu YOKOGAWA , Masatoshi Miyake , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： B23K9/00
CPC分类号： H01J37/32091 , H01J37/32522 , H01L21/324 , H01L21/67115
摘要： Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher.The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.
摘要翻译：提供一种热处理装置，其热效率高，即使在1200℃以上的加热条件下，也能够降低被处理基板的表面粗糙度。加热试样的热处理装置包括由等离子体加热的加热板，所述等离子体形成在间隙的区域中以加热试样。

3. 发明授权

US07771564B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07771564B2
公开(公告)日：2010-08-10
申请号：US11512081
申请日：2006-08-30
申请人： Ken'etsu Yokogawa , Takumi Tandou , Seiichiro Kanno
发明人： Ken'etsu Yokogawa , Takumi Tandou , Seiichiro Kanno
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/458 , C23C16/46
CPC分类号： H01L21/67109 , H01J37/32431 , H01J2237/2001
摘要： In a plasma processing apparatus equipped with a vacuum vessel and a sample table which is arranged within the vacuum vessel and has a sample mounting plane where a sample is mounted on an upper portion, for forming plasma within the processing chamber so as to process a sample mounted on the sample mounting plane, the plasma processing apparatus includes: a space arranged inside the sample table, into which a coolant is supplied; a ceiling plane of the space arranged opposite to the sample mounting plane, with which the coolant collides from plural portions; and an exhaust port via which the coolant which has collided with the ceiling plane to be evaporated is exhausted from the sample table.
摘要翻译：在配备有真空容器和样品台的等离子体处理装置中，其设置在真空容器内并具有样品安装面，样品安装在上部，用于在处理室内形成等离子体，以便处理样品安装在样品安装平面上的等离子体处理设备包括：布置在样品台内部的空间，供应冷却剂的空间; 与样品安装平面相对的空间的顶板，冷却剂与多个部分碰撞; 以及与待蒸发的顶板相撞的冷却剂通过该排气口从样品台排出。

4. 发明申请

US20060157449A1 Plasma processing apparatus and a plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060157449A1
公开(公告)日：2006-07-20
申请号：US11348300
申请日：2006-02-07
申请人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
发明人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译：在氧化膜蚀刻工艺中，需要具有CF 3 N，CF 2，CF和F的合适比例的等离子体，并且存在的问题是，特性根据蚀刻室的温度波动而波动。使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的可以获得蚀刻特性。由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热可以容易地获得耐性性能对策。

5. 发明授权

US08809727B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US08809727B2
公开(公告)日：2014-08-19
申请号：US13105981
申请日：2011-05-12
申请人： Ken'etsu Yokogawa , Masatoshi Miyake
发明人： Ken'etsu Yokogawa , Masatoshi Miyake
IPC分类号： B23K10/00
CPC分类号： H01J37/32018 , H01J37/32036 , H01J37/32467 , H01J37/32724 , H01J37/32899 , H01L21/67109 , H01L21/6719 , H01L21/68742 , H01L21/68771
摘要： The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.
摘要翻译：本发明涉及一种执行活化退火或缺陷修复退火和表面氧化的热处理设备，该热处理设备接受用于控制半导体衬底的导电性能的杂质掺杂。在本发明中，将待加热的样品放置在等离子体处理室中的下电极上。上部电极和下部电极之间的间隙填充有主要原料是具有接近大气压的压力的稀有气体（氦，氩，氪，氙等）的间隙。从高频电源馈送的电力施加到上电极，以引起大气压辉光放电。电极之间的间隙中的气体加热（其取决于辉光放电）用于热处理待加热的样品。

6. 发明申请

US20090008363A1 Plasma processing apparatus and a plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20090008363A1
公开(公告)日：2009-01-08
申请号：US12230565
申请日：2008-09-02
申请人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
发明人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
IPC分类号： C23F1/02
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译：在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF和F的合适比例的等离子体，并且存在腐蚀特性根据蚀刻室的温度波动而波动的问题。使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的可以获得蚀刻特性。由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热可以容易地获得耐性性能对策。

7. 发明申请

US20060096706A1 Dry etching apparatus and a method of manufacturing a semiconductor device 审中-公开
标题翻译：干式蚀刻装置及半导体装置的制造方法
公开(公告)号：US20060096706A1
公开(公告)日：2006-05-11
申请号：US11315316
申请日：2005-12-23
申请人： Naoyuki Kofuji , Masahito Mori , Ken'etsu Yokogawa , Naoshi Itabashi , Kazunori Tsujimoto , Shin'ichi Tachi
发明人： Naoyuki Kofuji , Masahito Mori , Ken'etsu Yokogawa , Naoshi Itabashi , Kazunori Tsujimoto , Shin'ichi Tachi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01L21/32136 , H01L21/32137
摘要： The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.
摘要翻译：在干蚀刻中实现了具有低栅极破坏率和高各向异性的处理。等离子体是通过电磁波的ECR共振产生的，其通过在布置在电介质2的大气层上的微阵列4中提供超高频电力而产生，该电介质2将真空内部和外部以及磁场分离。通过该等离子体蚀刻导电层，其是稳定且均匀的等离子体。

8. 发明授权

US5291145A Microwave processing equipment 失效
标题翻译：微波加工设备
公开(公告)号：US5291145A
公开(公告)日：1994-03-01
申请号：US851628
申请日：1992-03-16
申请人： Yusuke Yajima , Ken'etsu Yokogawa
发明人： Yusuke Yajima , Ken'etsu Yokogawa
IPC分类号： H01P1/00 , H01S1/02
CPC分类号： H01S1/02
摘要： Novel microwave processing equipment includes a silicon single crystal containing neutral {110} planar four vacancies, a cooling mechanism for holding the silicon single crystal to a low temperature, a light pumping mechanism for irradiating light to the silicon single crystal, a magnetic field applying device for applying a static magnetic field to the silicon single crystal, an orientation holding mechanism for holding the silicon single crystal to a specific orientation with respect to the static magnetic field, an electromagnetic wave inputting mechanism for supplying an input electromagnetic wave to the silicon single crystal, and an electromagnetic wave outputting mechanism for extracting an output electromagnetic wave from the silicon single crystal. The input electromagnetic wave supplied in the silicon single crystal by the electromagnetic wave inputting mechanism is amplified by the stimulated emission produced in the silicon single crystal and passes through the electromagnetic wave outputting mechanism to be outputted to the outside. A microwave amplifier with narrow band width capable of amplifying the electromagnetic wave in the microwave range with low noise is thus obtained.
摘要翻译：新型微波加工设备包括含有中性（110）平面四个空位的硅单晶，用于将硅单晶保持在低温的冷却机构，用于向硅单晶照射光的光泵机构，磁场施加装置用于向硅单晶施加静磁场的方法，用于将硅单晶保持在相对于静磁场的特定取向的取向保持机构，用于向硅单晶提供输入电磁波的电磁波输入机构以及用于从硅单晶中提取输出电磁波的电磁波输出机构。通过电磁波输入机构在硅单晶中提供的输入电磁波被硅单晶中产生的受激发射放大，并通过电磁波输出机构输出到外部。从而获得具有窄带宽的微波放大器，其能够以低噪声放大微波范围内的电磁波。

9. 发明授权

US09271341B2 Heat treatment apparatus that performs defect repair annealing 有权
标题翻译：进行缺陷修复退火的热处理装置
公开(公告)号：US09271341B2
公开(公告)日：2016-02-23
申请号：US12955020
申请日：2010-11-29
申请人： Ken'etsu Yokogawa , Masatoshi Miyake
发明人： Ken'etsu Yokogawa , Masatoshi Miyake
IPC分类号： H05B7/18 , H05B1/02
CPC分类号： H05B7/18
摘要： Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.
摘要翻译：提供一种热处理装置，即使在高温退火SiC的情况下，也能够发挥低的热容量并进行均匀的加热。热处理装置包括：一对平行板电极，对该平行板电极施加高频电压以在一对平行板电极之间放电的高频电源;测量设置在一对平行板电极中的待加热样品的温度，将气体引入到一对平行板电极中的气体引入单元，围绕该对平行板电极的反射镜，以及控制单元，控制高频电源的输出。使用由一对平行板电极之间的放电引起的气体的加热来热处理待加热的样品。

10. 发明申请

US20130087285A1 PLASMA ETCHING APPARATUS 审中-公开
标题翻译：等离子体蚀刻装置
公开(公告)号：US20130087285A1
公开(公告)日：2013-04-11
申请号：US13592129
申请日：2012-08-22
申请人： Naoyuki Kofuji , Ken'etsu Yokogawa , Nobuyuki Negishi , Masami Kamibayashi , Masatoshi Miyake
发明人： Naoyuki Kofuji , Ken'etsu Yokogawa , Nobuyuki Negishi , Masami Kamibayashi , Masatoshi Miyake
IPC分类号： B44C1/22 , H05H1/24
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3211 , H01J37/32192 , H01J37/32302 , H01J37/32449 , H01J2237/006 , H01J2237/3341
摘要： A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample.
摘要翻译：无电极系统的等离子体蚀刻装置可以使自由基密度均匀化，并提高蚀刻的均匀性。无电极系统的等离子体蚀刻装置包括减压室，气体供给机构，电介质窗，等离子体产生单元，放置样品的台和连接到载物台的第一RF电源。等离子体蚀刻装置还包括用于供应第二气体的气体引入机构和用于输入允许在样品的外周产生自由基的RF功率的第二RF电源。

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