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1. 发明申请

US20120142179A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120142179A1
公开(公告)日：2012-06-07
申请号：US13287345
申请日：2011-11-02
申请人： Jongchul PARK , Jong-Kyu Kim , Ki-jin Park , Sangsup Jeong
发明人： Jongchul PARK , Jong-Kyu Kim , Ki-jin Park , Sangsup Jeong
IPC分类号： H01L21/28 , H01L21/30
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/76816 , H01L21/76897 , H01L27/10855 , H01L27/10894 , H01L28/90
摘要： A method of manufacturing a semiconductor device includes forming a lower film including a cell region and a peripheral circuit region, forming a first sacrificial film on the lower film, the first sacrificial film having trenches in the cell region, forming a second sacrificial pattern on the first sacrificial film, the second sacrificial pattern having line-shaped patterns spaced apart from each other and crossing the trenches in the cell region, and the second sacrificial pattern covering a top surface of the first sacrificial film in the peripheral circuit region, and patterning the first sacrificial film to form upper holes in portions of the trenches exposed by the second sacrificial pattern.
摘要翻译：一种制造半导体器件的方法包括：形成包括单元区域和外围电路区域的下膜，在下膜上形成第一牺牲膜，第一牺牲膜在单元区域中具有沟槽，在第二牺牲膜上形成第二牺牲图案第一牺牲膜，第二牺牲图案具有彼此间隔开并与电池区域中的沟槽交叉的线状图案，并且第二牺牲图案覆盖外围电路区域中的第一牺牲膜的顶表面，并且图案化第一牺牲膜，以在由第二牺牲图案暴露的部分沟槽中形成上孔。

2. 发明申请

US20110104889A1 Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation 有权
标题翻译：使用接触孔隔离器形成集成电路器件以改善接触隔离的方法
公开(公告)号：US20110104889A1
公开(公告)日：2011-05-05
申请号：US12965091
申请日：2010-12-10
申请人： Doo-young Lee , Sang-sup Jeong , Sung-gil Chol , Jong-chul Park , Jin-young Kim , Ki-jin Park
发明人： Doo-young Lee , Sang-sup Jeong , Sung-gil Chol , Jong-chul Park , Jin-young Kim , Ki-jin Park
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , H01L21/76831
摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
摘要翻译：形成集成电路器件的方法包括接触孔中的上部侧壁间隔物，以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。这些方法包括在半导体衬底上形成层间绝缘层。层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层来形成第一材料的蚀刻速率。以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

3. 发明授权

US07875551B2 Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation 有权
标题翻译：使用接触孔间隔物形成集成电路器件以改善接触隔离的方法
公开(公告)号：US07875551B2
公开(公告)日：2011-01-25
申请号：US12575682
申请日：2009-10-08
申请人： Doo-young Lee , Sang-sup Jeong , Sung-gil Choi , Jong-chul Park , Jin-young Kim , Ki-jin Park
发明人： Doo-young Lee , Sang-sup Jeong , Sung-gil Choi , Jong-chul Park , Jin-young Kim , Ki-jin Park
IPC分类号： H01L23/58
CPC分类号： H01L21/76897 , H01L21/76831
摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
摘要翻译：形成集成电路器件的方法包括接触孔中的上部侧壁间隔物，以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。这些方法包括在半导体衬底上形成层间绝缘层。层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。该接触孔可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层而形成，并以较快的第一材料的蚀刻速率。以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

4. 发明申请

US20100042640A1 Migration Apparatus Which Convert SAM/VSAM Files of Mainframe System into SAM/VSAM Files of Open System and Method for Thereof 审中-公开
标题翻译：将主机系统的SAM / VSAM文件转换为开放系统的SAM / VSAM文件的迁移装置及其方法
公开(公告)号：US20100042640A1
公开(公告)日：2010-02-18
申请号：US12445568
申请日：2006-12-08
申请人： Kang Ho Lee , Min Ho Lee , Ki Jin Park
发明人： Kang Ho Lee , Min Ho Lee , Ki Jin Park
IPC分类号： G06F7/00 , G06F12/00
CPC分类号： G06F16/214 , G06F16/258
摘要： Provided are a migration apparatus and method for converting a sequential access method (SAM)/virtual storage access method (VSAM) file of a mainframe system into an appropriate SAM/VSAM file for an open system. The migration apparatus includes: an information obtaining module for obtaining various file information on a SAM file of the mainframe system; a data obtaining module for obtaining actual data of the SAM file of the mainframe system composed of Extended Binary Coded Decimal Interchange Code (EBCDIC) in binary format; a code conversion module for converting the obtained actual data composed of EBCDIC into American Standard Code for Information Interchange (ASCII) code; a file combination module for combining the obtained file information on the SAM file with the actual data corresponding to the file information and converted into ASCII code; and a file registration module for registering the file information of the combined SAM file in the open system. The migration apparatus and method efficiently reuse a conventionally used SAM/VSAM file during a rehosting process of converting a mainframe system into an open system.
摘要翻译：提供了一种用于将主机系统的顺序存取方法（SAM）/虚拟存储访问方法（VSAM）文件转换为用于开放系统的适当的SAM / VSAM文件的迁移装置和方法。迁移装置包括：信息获取模块，用于获得关于大型机系统的SAM文件的各种文件信息; 数据获取模块，用于获得由二进制格式的扩展二进制编码十进制交换码（EBCDIC）组成的主机系统的SAM文件的实际数据; 用于将获得的由EBCDIC组成的实际数据转换成美国信息交换代码（ASCII）代码的代码转换模块; 文件组合模块，用于将获得的SAM文件上的文件信息与对应于文件信息的实际数据组合并转换成ASCII码; 以及用于在打开的系统中登记组合的SAM文件的文件信息的文件登记模块。迁移装置和方法在将主机系统转换为开放系统的重新设置过程期间有效地重用常规使用的SAM / VSAM文件。

5. 发明申请

US20100001112A1 CENTRIFUGAL BRAKE DEVICE FOR USE IN BAIT CAST REEL 有权
标题翻译：离心式制动器用于白炽灯
公开(公告)号：US20100001112A1
公开(公告)日：2010-01-07
申请号：US12432851
申请日：2009-04-30
申请人： Yong Sub Noh , Ki Jin Park
发明人： Yong Sub Noh , Ki Jin Park
IPC分类号： A01K89/033 , A01K89/02
CPC分类号： A01K89/0155
摘要： A centrifugal brake device capable of preventing backlash of a bait cast reel by using the centrifugal force generated from a spool is disclosed. The centrifugal brake device includes a shoe housing engaged to one side of a spool and including a plurality of brake shoes disposed in a radial direction, a stopper positioned on an upper portion of the shoe housing to restrict the brake shoes, a stopper controller engaged to an upper portion of the stopper to control a lifting position of the stopper, a spool cover enclosing the shoe housing and including a brake ring engaged to an inner surface of the spool cover, the brake shoes coming into contact with the brake ring when the brake shoes are released from the stopper, a slide cam engaged to one side of the spool cover to control a lifting position of the stopper controller, with a spring being interposed between the slide cam and the spool cover, and an adjustment dial for gradually adjusting a lifting degree of the slide cam, the adjustment dial being provided with displacement portions on a surface thereof contacting the slide cam.
摘要翻译：公开了一种能够通过使用从线轴产生的离心力来防止诱饵铸造卷轴的间隙的离心式制动装置。离心式制动装置包括：接合到卷轴的一侧并包括沿径向设置的多个制动瓦的止挡件，止动件定位在鞋壳的上部以限制制动蹄，制动器控制器接合到止动件的上部，用于控制止动件的提升位置;卷轴盖，其包围所述鞋壳，并且包括与所述卷轴盖的内表面接合的制动环，所述制动器在所述制动器鞋子从止动件释放，滑动凸轮接合到卷轴盖的一侧以控制止动器控制器的提升位置，弹簧插入在滑动凸轮和卷轴盖之间，以及调节转盘，用于逐渐调节滑动凸轮的提升度，调节转盘在其与滑动凸轮接触的表面上设有位移部分。

6. 发明授权

US08435876B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08435876B2
公开(公告)日：2013-05-07
申请号：US13287345
申请日：2011-11-02
申请人： Jongchul Park , Jong-Kyu Kim , Ki-jin Park , Sangsup Jeong
发明人： Jongchul Park , Jong-Kyu Kim , Ki-jin Park , Sangsup Jeong
IPC分类号： H01L21/28 , H01L21/30
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/76816 , H01L21/76897 , H01L27/10855 , H01L27/10894 , H01L28/90
摘要： A method of manufacturing a semiconductor device includes forming a lower film including a cell region and a peripheral circuit region, forming a first sacrificial film on the lower film, the first sacrificial film having trenches in the cell region, forming a second sacrificial pattern on the first sacrificial film, the second sacrificial pattern having line-shaped patterns spaced apart from each other and crossing the trenches in the cell region, and the second sacrificial pattern covering a top surface of the first sacrificial film in the peripheral circuit region, and patterning the first sacrificial film to form upper holes in portions of the trenches exposed by the second sacrificial pattern.
摘要翻译：一种制造半导体器件的方法包括：形成包括单元区域和外围电路区域的下膜，在下膜上形成第一牺牲膜，第一牺牲膜在单元区域中具有沟槽，在第二牺牲膜上形成第二牺牲图案第一牺牲膜，第二牺牲图案具有彼此间隔开并与电池区域中的沟槽交叉的线状图案，并且第二牺牲图案覆盖外围电路区域中的第一牺牲膜的顶表面，并且图案化第一牺牲膜，以在由第二牺牲图案暴露的部分沟槽中形成上孔。

7. 发明申请

US20120225554A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING BOWING PREVENTION FILM 审中-公开
标题翻译：使用预防膜制造半导体器件的方法
公开(公告)号：US20120225554A1
公开(公告)日：2012-09-06
申请号：US13409169
申请日：2012-03-01
申请人： Kukhan YOON , Cheolkyu LEE , Junsoo LEE , Jong-Kyu KIM , Seong-Mo KOO , Ki-jin PARK
发明人： Kukhan YOON , Cheolkyu LEE , Junsoo LEE , Jong-Kyu KIM , Seong-Mo KOO , Ki-jin PARK
IPC分类号： H01L21/768
CPC分类号： H01L21/76802 , H01L27/10814 , H01L27/10852 , H01L28/90
摘要： A method of manufacturing a semiconductor device, the method including sequentially forming a lower material film, a middle material film, and an upper material film on a semiconductor substrate; and forming an opening that vertically penetrates the upper material film, the middle material film, and the lower material film by etching the upper material film, the middle material film, and the lower material film, wherein the middle material film and the upper material film are formed of material films having etch rates lower than an etch rate of the lower material film with respect to an etchant for etching the lower material film.
摘要翻译：一种制造半导体器件的方法，所述方法包括在半导体衬底上顺序地形成下部材料膜，中间材料膜和上部材料膜; 并且通过蚀刻上部材料膜，中间材料膜和下部材料膜形成垂直地穿透上部材料膜，中间材料膜和下部材料膜的开口，其中中间材料膜和上部材料膜由具有低于下部材料膜相对于用于蚀刻下部材料膜的蚀刻剂的蚀刻速率的蚀刻速率的材料膜形成。

8. 发明授权

US08053358B2 Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation 有权
公开(公告)号：US08053358B2
公开(公告)日：2011-11-08
申请号：US12965091
申请日：2010-12-10
申请人： Doo-young Lee , Sang-sup Jeong , Sung-gil Choi , Jong-chul Park , Jin-young Kim , Ki-jin Park
发明人： Doo-young Lee , Sang-sup Jeong , Sung-gil Choi , Jong-chul Park , Jin-young Kim , Ki-jin Park
IPC分类号： H01L23/58
CPC分类号： H01L21/76897 , H01L21/76831
摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.

9. 发明授权

US07770833B2 Centrifugal brake device for use in bait cast reel 有权
标题翻译：用于诱饵铸造卷轴的离心式制动装置
公开(公告)号：US07770833B2
公开(公告)日：2010-08-10
申请号：US12432851
申请日：2009-04-30
申请人： Yong Sub Noh , Ki Jin Park
发明人： Yong Sub Noh , Ki Jin Park
IPC分类号： A01K89/01
CPC分类号： A01K89/0155
摘要： A centrifugal brake device capable of preventing backlash of a bait cast reel by using the centrifugal force generated from a spool is disclosed. The centrifugal brake device includes a shoe housing engaged to one side of a spool and including a plurality of brake shoes disposed in a radial direction, a stopper positioned on an upper portion of the shoe housing to restrict the brake shoes, a stopper controller engaged to an upper portion of the stopper to control a lifting position of the stopper, a spool cover enclosing the shoe housing and including a brake ring engaged to an inner surface of the spool cover, the brake shoes coming into contact with the brake ring when the brake shoes are released from the stopper, a slide cam engaged to one side of the spool cover to control a lifting position of the stopper controller, with a spring being interposed between the slide cam and the spool cover, and an adjustment dial for gradually adjusting a lifting degree of the slide cam, the adjustment dial being provided with displacement portions on a surface thereof contacting the slide cam.
摘要翻译：公开了一种能够通过使用从线轴产生的离心力来防止诱饵铸造卷轴的间隙的离心式制动装置。离心式制动装置包括：接合到卷轴的一侧并包括沿径向设置的多个制动瓦的止挡件，止动件定位在鞋壳的上部以限制制动蹄，制动器控制器接合到止动件的上部，用于控制止动件的提升位置;卷轴盖，其包围所述鞋壳，并且包括与所述卷轴盖的内表面接合的制动环，所述制动器在所述制动器鞋子从止动件释放，滑动凸轮接合到卷轴盖的一侧以控制止动器控制器的提升位置，弹簧插入在滑动凸轮和卷轴盖之间，以及调节转盘，用于逐渐调节滑动凸轮的提升度，调节转盘在其与滑动凸轮接触的表面上设有位移部分。

10. 发明申请

US20100112803A1 Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation 有权
标题翻译：使用接触孔隔离器形成集成电路器件以改善接触隔离的方法
公开(公告)号：US20100112803A1
公开(公告)日：2010-05-06
申请号：US12575682
申请日：2009-10-08
申请人： Doo-young Lee , Sang-sup Jeong , Sung-gil Choi , Jong-chul Park , Jin-young Kim , Ki-jin Park
发明人： Doo-young Lee , Sang-sup Jeong , Sung-gil Choi , Jong-chul Park , Jin-young Kim , Ki-jin Park
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , H01L21/76831
摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
摘要翻译：形成集成电路器件的方法包括接触孔中的上部侧壁间隔物，以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。这些方法包括在半导体衬底上形成层间绝缘层。层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层来形成第一材料的蚀刻速率。以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

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