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1. 发明授权

US08010913B2 Model-based assist feature placement using inverse imaging approach 有权
标题翻译：使用逆成像方法的基于模型的辅助特征放置
公开(公告)号：US08010913B2
公开(公告)日：2011-08-30
申请号：US12386199
申请日：2009-04-14
申请人： Amyn A. Poonawala , Benjamin D. Painter , Levi D. Barnes
发明人： Amyn A. Poonawala , Benjamin D. Painter , Levi D. Barnes
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： Some embodiments provide techniques and systems to identify locations in a target mask layout for placing assist features. During operation, an embodiment can determine a spatial sampling frequency to sample the target mask layout, wherein sampling the target mask layout at the spatial sampling frequency prevents spatial aliasing in a gradient of a cost function which is used for computing an inverse mask field. Next, the system can generate a grayscale image by sampling the target mask layout at the spatial sampling frequency. The system can then compute the inverse mask field by iteratively modifying the grayscale image. The system can use the gradient of the cost function to guide the iterative modification process. Next, the system can filter the inverse mask field using a morphological operator, and use the filtered inverse mask field to identify assist feature locations in the target mask layout.
摘要翻译：一些实施例提供了用于识别目标掩模布局中用于放置辅助特征的位置的技术和系统。在操作期间，实施例可以确定采样目标掩模布局的空间采样频率，其中以空间采样频率对目标掩模布局进行采样以防止用于计算逆掩模场的成本函数的梯度中的空间混叠。接下来，系统可以通过以空间采样频率对目标掩模布局进行采样来生成灰度图像。然后，系统可以通过迭代地修改灰度图像来计算反掩模字段。系统可以使用成本函数的梯度来指导迭代修改过程。接下来，系统可以使用形态学算子对反掩模字段进行过滤，并使用滤波后的反掩模字段来识别目标掩模布局中的辅助特征位置。

2. 发明申请

US20100262946A1 Model-based assist feature placement using inverse imaging approach 有权
标题翻译：使用逆成像方法的基于模型的辅助特征放置
公开(公告)号：US20100262946A1
公开(公告)日：2010-10-14
申请号：US12386199
申请日：2009-04-14
申请人： Amyn A. Poonawala , Benjaman D. Painter , Levi D. Barnes
发明人： Amyn A. Poonawala , Benjaman D. Painter , Levi D. Barnes
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： Some embodiments provide techniques and systems to identify locations in a target mask layout for placing assist features. During operation, an embodiment can determine a spatial sampling frequency to sample the target mask layout, wherein sampling the target mask layout at the spatial sampling frequency prevents spatial aliasing in a gradient of a cost function which is used for computing an inverse mask field. Next, the system can generate a grayscale image by sampling the target mask layout at the spatial sampling frequency. The system can then compute the inverse mask field by iteratively modifying the grayscale image. The system can use the gradient of the cost function to guide the iterative modification process. Next, the system can filter the inverse mask field using a morphological operator, and use the filtered inverse mask field to identify assist feature locations in the target mask layout.
摘要翻译：一些实施例提供了用于识别目标掩模布局中用于放置辅助特征的位置的技术和系统。在操作期间，实施例可以确定采样目标掩模布局的空间采样频率，其中以空间采样频率对目标掩模布局进行采样以防止用于计算逆掩模场的成本函数的梯度中的空间混叠。接下来，系统可以通过以空间采样频率对目标掩模布局进行采样来生成灰度图像。然后，系统可以通过迭代地修改灰度图像来计算反掩模字段。系统可以使用成本函数的梯度来指导迭代修改过程。接下来，系统可以使用形态学算子对反掩模字段进行过滤，并使用滤波后的反掩模字段来识别目标掩模布局中的辅助特征位置。

3. 发明申请

US20100199255A1 METHOD AND APPARATUS FOR CORRECTING ASSIST-FEATURE-PRINTING ERRORS IN A LAYOUT 有权
标题翻译：用于校正布局中的辅助特征打印错误的方法和装置
公开(公告)号：US20100199255A1
公开(公告)日：2010-08-05
申请号：US12363352
申请日：2009-01-30
申请人： Sunggon Jung , Levi D. Barnes , Xiaohai Li , Robert M. Lugg , Sooryong Lee
发明人： Sunggon Jung , Levi D. Barnes , Xiaohai Li , Robert M. Lugg , Sooryong Lee
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/705
摘要： One embodiment of the present invention provides a system that adjusts assist features in a layout to prevent assist features from printing. During operation, the system receives a layout. The system then identifies an assist-feature (AF)-printing hotspot in the layout, wherein the AF-printing hotspot includes a set of assist features and one or more target patterns in proximity to the set of assist features. At least one assist feature in the set of assist features is expected to print during a lithography process. Next, the system modifies the AF-printing hotspot by: (1) modifying the set of assist features; and (2) performing optical-proximity-correction (OPC) on the one or more target patterns. The system then performs a lithography simulation on the modified AF-printing hotspot to determine if: (1) a through-process-window associated with the modified AF-printing hotspot is acceptable; and (2) no assist feature in the modified set of assist features is expected to print. If so, the system replaces the AF-printing hotspot with the modified AF-printing hotspot.
摘要翻译：本发明的一个实施例提供一种调整布局中的辅助特征以防止辅助特征进行打印的系统。在操作期间，系统接收布局。然后，系统识别布局中的辅助特征（AF）打印热点，其中AF打印热点包括一组辅助特征以及邻近该组辅助特征的一个或多个目标图案。在光刻过程期间，期望在该组辅助特征中的至少一个辅助特征被打印。接下来，系统通过以下方式修改AF打印热点：（1）修改辅助功能的集合; 和（2）对一个或多个目标图案执行光学邻近校正（OPC）。然后，系统对修改的AF打印热点进行光刻模拟，以确定是否：（1）与修改的AF打印热点相关联的通过处理窗口是可接受的; 和（2）修改后的辅助功能组合中的辅助功能预计不会打印。如果是这样，系统将使用修改的AF打印热点替换AF打印热点。

4. 发明授权

US07954071B2 Assist feature placement based on a focus-sensitive cost-covariance field 有权
标题翻译：根据焦点敏感的成本协方差字段来辅助特征放置
公开(公告)号：US07954071B2
公开(公告)日：2011-05-31
申请号：US12263354
申请日：2008-10-31
申请人： Levi D. Barnes , Benjamin D. Painter , Qiliang Yan , Yongfa Fan , Jianliang Li , Amyn Poonawala
发明人： Levi D. Barnes , Benjamin D. Painter , Qiliang Yan , Yongfa Fan , Jianliang Li , Amyn Poonawala
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G03F1/36 , G03F7/70433 , G03F7/70441 , G03F7/705 , G03F7/70641
摘要： One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Note that the contours of the target patterns substantially coincide with the edges of set of the polygons. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.
摘要翻译：本发明的一个实施例提供了一种系统，其确定后光学邻近校正（后OPC）掩模布局中的辅助特征放置。在操作期间，系统接收一组目标图案，这些目标图案表示预OPC掩模布局中的一组多边形。然后，系统基于目标图案构建对焦敏感的成本函数，其中焦点敏感成本函数表示响应于光刻系统的聚焦条件的变化的目标图案的OPC后轮廓的移动量。注意，目标图案的轮廓基本上与多边形的集合的边缘重合。接下来，系统基于焦点敏感成本函数计算成本协方差字段（CCF字段），其中CCF字段是表示对焦点敏感成本函数的改变的二维（2D）映射，由于添加了在后OPC掩模布局中的给定位置处的图案。最后，系统基于CCF字段生成后OPC掩模布局的辅助功能。

5. 发明授权

US07721246B2 Method and apparatus for quickly determining the effect of placing an assist feature at a location in a layout 有权
标题翻译：用于快速确定将辅助特征放置在布局中的位置的效果的方法和装置
公开(公告)号：US07721246B2
公开(公告)日：2010-05-18
申请号：US11584737
申请日：2006-10-19
申请人： Jianliang Li , Qiliang Yan , Lawrence S. Melvin, III , Levi D. Barnes , Abani M. Biswas , Alakananda A. Biswas, legal representative
发明人： Jianliang Li , Qiliang Yan , Lawrence S. Melvin, III , Levi D. Barnes , Abani M. Biswas
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/36 , G03F7/705
摘要： One embodiment of the present invention determines the effect of placing an assist feature at a location in a layout. During operation, the system receives a first value which was pre-computed by convolving a model with a layout at an evaluation point, wherein the model models semiconductor manufacturing processes. Next, the system determines a second value by convolving the model with an assist feature, which is assumed to be located at a first location which is in proximity to the evaluation point. The system then determines the effect of placing an assist feature using the first value and the second value. An embodiment of the present invention can be used to determine a substantially optimal location for placing an assist feature in a layout.
摘要翻译：本发明的一个实施例确定了在布局中的位置放置辅助特征的效果。在操作期间，系统接收通过在评估点卷积具有布局的模型而预先计算的第一值，其中模型对半导体制造过程进行建模。接下来，系统通过将模型与辅助特征进行卷积来确定第二值，所述辅助特征被假设为位于靠近评估点的第一位置。然后，系统使用第一值和第二值确定放置辅助特征的效果。可以使用本发明的实施例来确定用于将辅助特征放置在布局中的基本最佳位置。

6. 发明申请

US20110202891A1 EVALUATING THE QUALITY OF AN ASSIST FEATURE PLACEMENT BASED ON A FOCUS-SENSITIVE COST-COVARIANCE FIELD 有权
标题翻译：基于焦点敏感成本领域评估协助特征放置的质量
公开(公告)号：US20110202891A1
公开(公告)日：2011-08-18
申请号：US13094749
申请日：2011-04-26
申请人： Levi D. Barnes , Benjamin D. Painter , Qiliang Yan , Yongfa Fan , Jianliang Li , Amyn Poonawala
发明人： Levi D. Barnes , Benjamin D. Painter , Qiliang Yan , Yongfa Fan , Jianliang Li , Amyn Poonawala
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G03F1/36 , G03F7/70433 , G03F7/70441 , G03F7/705 , G03F7/70641
摘要： One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Note that the contours of the target patterns substantially coincide with the edges of set of the polygons. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.
摘要翻译：本发明的一个实施例提供了一种系统，其确定后光学邻近校正（后OPC）掩模布局中的辅助特征放置。在操作期间，系统接收一组目标图案，这些目标图案表示预OPC掩模布局中的一组多边形。然后，系统基于目标图案构建对焦敏感的成本函数，其中焦点敏感成本函数表示响应于光刻系统的聚焦条件的变化的目标图案的OPC后轮廓的移动量。注意，目标图案的轮廓基本上与多边形的集合的边缘重合。接下来，系统基于焦点敏感成本函数计算成本协方差字段（CCF字段），其中CCF字段是表示由于添加了对焦敏感成本函数而导致的对焦敏感成本函数的改变的二维（2D）映射在后OPC掩模布局中的给定位置处的图案。最后，系统基于CCF字段生成后OPC掩模布局的辅助功能。

7. 发明授权

US07421678B2 Assist feature placement using a process-sensitivity model 有权
标题翻译：使用过程敏感度模型辅助功能放置
公开(公告)号：US07421678B2
公开(公告)日：2008-09-02
申请号：US11433595
申请日：2006-05-12
申请人： Levi D. Barnes , Lawrence S. Melvin, III , Benjamin D. Painter
发明人： Levi D. Barnes , Lawrence S. Melvin, III , Benjamin D. Painter
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/36 , G06F2217/12 , Y02P90/265
摘要： One embodiment of the present invention provides a system that determines an assist feature placement. During operation, the system receives an initial assist feature placement for a layout. Next, the system determines assist feature perturbations using the initial assist feature placement. An assist feature perturbation typically comprises a few simple polygons. The system then determines perturbation values at evaluation points in the layout using the assist feature perturbations and an analytical model. If a process-sensitivity model is used, the perturbation value at an evaluation point is associated with the change in the through-process window at that point in the layout. Next, the system determines a change in the value of an objective function using the perturbation values. The objective function can be indicative of the overall manufacturability of the layout. The system then determines an assist feature placement using the change in the value of the objective function. For example, the system can determine an assist feature placement using an assist feature perturbation which minimizes the objective function value.
摘要翻译：本发明的一个实施例提供一种确定辅助特征放置的系统。在操作期间，系统接收布局的初始辅助功能布局。接下来，系统使用初始辅助特征放置来确定辅助特征扰动。辅助特征扰动通常包括几个简单的多边形。然后，系统使用辅助特征扰动和分析模型来确定布局中评估点的扰动值。如果使用过程敏感度模型，则评估点的扰动值与布局中该点处的过程窗口的变化相关。接下来，系统使用扰动值来确定目标函数的值的变化。目标函数可以表示布局的整体可制造性。然后，系统使用目标函数的值的改变来确定辅助特征放置。例如，系统可以使用最小化目标函数值的辅助特征扰动来确定辅助特征放置。

8. 发明授权

US08296688B2 Evaluating the quality of an assist feature placement based on a focus-sensitive cost-covariance field 有权
标题翻译：基于焦点敏感的成本 - 协方差字段来评估辅助特征放置的质量
公开(公告)号：US08296688B2
公开(公告)日：2012-10-23
申请号：US13094749
申请日：2011-04-26
申请人： Levi D. Barnes , Benjamin D. Painter , Qiliang Yan , Yongfa Fan , Jianliang Li , Amyn Poonawala
发明人： Levi D. Barnes , Benjamin D. Painter , Qiliang Yan , Yongfa Fan , Jianliang Li , Amyn Poonawala
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G03F1/36 , G03F7/70433 , G03F7/70441 , G03F7/705 , G03F7/70641
摘要： One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.
摘要翻译：本发明的一个实施例提供了一种系统，其确定后光学邻近校正（后OPC）掩模布局中的辅助特征放置。在操作期间，系统接收一组目标图案，这些目标图案表示预OPC掩模布局中的一组多边形。然后，系统基于目标图案构建对焦敏感的成本函数，其中焦点敏感成本函数表示响应于光刻系统的聚焦条件的变化的目标图案的OPC后轮廓的移动量。接下来，系统基于焦点敏感成本函数计算成本协方差字段（CCF字段），其中CCF字段是表示由于添加了对焦敏感成本函数而导致的对焦敏感成本函数的改变的二维（2D）映射在后OPC掩模布局中的给定位置处的图案。最后，系统基于CCF字段生成后OPC掩模布局的辅助功能。

9. 发明申请

US20100115486A1 ASSIST FEATURE PLACEMENT BASED ON A FOCUS-SENSITIVE COST-COVARIANCE FIELD 有权
标题翻译：基于焦点敏感成本领域的辅助特征放置
公开(公告)号：US20100115486A1
公开(公告)日：2010-05-06
申请号：US12263354
申请日：2008-10-31
申请人： Levi D. Barnes , Benjamin D. Painter , Qiliang Yang , Yongfa Fan , Jianliang Li , Amyn Poonawala
发明人： Levi D. Barnes , Benjamin D. Painter , Qiliang Yang , Yongfa Fan , Jianliang Li , Amyn Poonawala
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G03F1/36 , G03F7/70433 , G03F7/70441 , G03F7/705 , G03F7/70641
摘要： One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Note that the contours of the target patterns substantially coincide with the edges of set of the polygons. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.
摘要翻译：本发明的一个实施例提供了一种系统，其确定后光学邻近校正（后OPC）掩模布局中的辅助特征放置。在操作期间，系统接收一组目标图案，这些目标图案表示预OPC掩模布局中的一组多边形。然后，系统基于目标图案构建对焦敏感的成本函数，其中焦点敏感成本函数表示响应于光刻系统的聚焦条件的变化的目标图案的OPC后轮廓的移动量。注意，目标图案的轮廓基本上与多边形的集合的边缘重合。接下来，系统基于焦点敏感成本函数计算成本协方差字段（CCF字段），其中CCF字段是表示由于添加了对焦敏感成本函数而导致的对焦敏感成本函数的改变的二维（2D）映射在后OPC掩模布局中的给定位置处的图案。最后，系统基于CCF字段生成后OPC掩模布局的辅助功能。

10. 发明授权

US07979812B2 Method and apparatus for correcting assist-feature-printing errors in a layout 有权
标题翻译：用于校正布局中的辅助特征打印错误的方法和装置
公开(公告)号：US07979812B2
公开(公告)日：2011-07-12
申请号：US12363352
申请日：2009-01-30
申请人： Sunggon Jung , Levi D. Barnes , Xiaohai Li , Robert M. Lugg , Sooryong Lee
发明人： Sunggon Jung , Levi D. Barnes , Xiaohai Li , Robert M. Lugg , Sooryong Lee
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/705
摘要： One embodiment of the present invention provides a system that adjusts assist features in a layout to prevent assist features from printing. During operation, the system receives a layout. The system then identifies an assist-feature (AF)-printing hotspot in the layout, wherein the AF-printing hotspot includes a set of assist features and one or more target patterns in proximity to the set of assist features. At least one assist feature in the set of assist features is expected to print during a lithography process. Next, the system modifies the AF-printing hotspot by: (1) modifying the set of assist features; and (2) performing optical-proximity-correction (OPC) on the one or more target patterns. The system then performs a lithography simulation on the modified AF-printing hotspot to determine if: (1) a through-process-window associated with the modified AF-printing hotspot is acceptable; and (2) no assist feature in the modified set of assist features is expected to print. If so, the system replaces the AF-printing hotspot with the modified AF-printing hotspot.
摘要翻译：本发明的一个实施例提供一种调整布局中的辅助特征以防止辅助特征进行打印的系统。在操作期间，系统接收布局。然后，系统识别布局中的辅助特征（AF）打印热点，其中AF打印热点包括一组辅助特征以及邻近该组辅助特征的一个或多个目标图案。在光刻过程期间，期望在该组辅助特征中的至少一个辅助特征被打印。接下来，系统通过以下方式修改AF打印热点：（1）修改辅助功能的集合; 和（2）对一个或多个目标图案执行光学邻近校正（OPC）。然后，系统对修改的AF打印热点进行光刻模拟，以确定是否：（1）与修改的AF打印热点相关联的通过处理窗口是可接受的; 和（2）修改后的辅助功能组合中的辅助功能预计不会打印。如果是这样，系统将使用修改的AF打印热点替换AF打印热点。

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