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1. 发明授权

US06723228B2 Additive used in catalytic cracking of hydrocarbons and a process of catalytic cracking of hydrocarbons using the same 失效
标题翻译：用于烃的催化裂化的添加剂和使用其的烃的催化裂化过程
公开(公告)号：US06723228B2
公开(公告)日：2004-04-20
申请号：US10459278
申请日：2003-06-11
申请人： Shuqin Su , Guoliang Wang , Haiqing Guo , Xianliang Deng , Longyan Wang , Wenyi Qi , Shufang Liu , Baojian Shen , Jinlong Liu , Dongming Zhao
发明人： Shuqin Su , Guoliang Wang , Haiqing Guo , Xianliang Deng , Longyan Wang , Wenyi Qi , Shufang Liu , Baojian Shen , Jinlong Liu , Dongming Zhao
IPC分类号： C10G1100
CPC分类号： B01J29/088 , B01J29/166 , C10G11/02 , C10G11/04 , C10G11/05 , C10G11/18 , C10G47/04 , C10G47/30
摘要： An additive used in catalytic cracking of hydrocarbons, which is in the form of homogeneous liquid and comprises a composite metal compound, wherein said composite metal compound consists of the oxides, hydroxides, organic acid salts, inorganic acid salts or metal organic complex compounds of at least one of the 1st group metals and at least one of the 2nd group metals, wherein the 1st group metals are selected from the group consisting of the metals of the IIIA, IVA, VA, VIA groups of the Element Period Table, boron, silicon, phosphorous and tellurium; wherein the 2nd group metals are selected from the group consisting of alkali-earth metals, transition metals, and rare earth metals, is disclosed. A process of catalytic cracking of hydrocarbons, utilizing the additive is also disclosed. The additive can passivate metals and promote the oxidation of CO, and is operated easily with production cost decreased.
摘要翻译：用于烃类催化裂化的添加剂，其为均匀液体的形式并且包含复合金属化合物，其中所述复合金属化合物由以下物质的氧化物，氢氧化物，有机酸盐，无机酸盐或金属有机络合物组成：第1族金属中的至少一种和第2族金属中的至少一种，其中第1族金属选自IIIA，IVA，VA，VIA族的金属元素周期表，硼，硅，磷和碲; 其中第二组金属选自碱土金属，过渡金属和稀土金属。还公开了利用添加剂的烃的催化裂化过程。添加剂可以钝化金属，促进CO的氧化，易于生产成本降低。

2. 发明授权

US06790343B2 Sulfur transfer additive for catalytic cracking of hydrocarbons and a catalytic cracking process of hydrocarbons using the same 失效
标题翻译：用于烃催化裂化的硫转移添加剂和使用其的烃的催化裂化过程
公开(公告)号：US06790343B2
公开(公告)日：2004-09-14
申请号：US10292681
申请日：2002-11-12
申请人： Longyan Wang , Haiqing Guo , Wenyi Qi , Shuqin Su , Xianliang Deng , Jinlong Liu , Shufang Liu
发明人： Longyan Wang , Haiqing Guo , Wenyi Qi , Shuqin Su , Xianliang Deng , Jinlong Liu , Shufang Liu
IPC分类号： C10G1100
CPC分类号： B01J21/10 , B01J23/14 , B01J23/18 , B01J23/8896 , C10G11/00 , C10G11/02 , C10G11/18
摘要： The present invention relates to a sulfur transfer additive for catalytic cracking of hydrocarbons and a catalytic cracking process of hydrocarbons using the sulfur transfer additive, said additive is a uniform liquid comprising at least two metal elements selected from the following three classes: a). alkaline earth metals, b). transition metals and P zone metals, and c). rare earth metals, and wherein there are at least two metal elements from the different classes. The present sulfur transfer additive can reduce the SOx content in the regenerator flue gas and the sulfur content in the light oil products at the same time, and has no negative effect on the activity and selectivity of the catalyst in the FCC system.
摘要翻译：本发明涉及用于烃的催化裂化的硫转移添加剂和使用硫转移添加剂的烃的催化裂化方法，所述添加剂是包含选自以下三个类别的至少两种金属元素的均匀液体：a）。碱土金属，b）。过渡金属和P区金属，和c）。稀土金属，并且其中存在来自不同类别的至少两种金属元素。本发明的硫转移添加剂可以同时降低再生器烟气中的SOx含量和轻油产品中的硫含量，对FCC系统中催化剂的活性和选择性没有负面影响。

3. 发明申请

US20130309808A1 METHOD FOR MANUFACTURING TRANSISTOR 有权
标题翻译：制造晶体管的方法
公开(公告)号：US20130309808A1
公开(公告)日：2013-11-21
申请号：US13376834
申请日：2011-06-10
申请人： Shengdong Zhang , Xin He , Longyan Wang
发明人： Shengdong Zhang , Xin He , Longyan Wang
IPC分类号： H01L29/66
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： Designs and fabrication of dual-gate thin film transistors are provided. An active region and a top gate electrode of the transistor can be made of a transparent thin film material. A photoresist can be coated onto a surface of the transparent conductive thin film for forming the top gate electrode. Light is from the bottom of the substrate during exposure. After the development, a photoresist pattern aligned with the bottom gate electrode is formed on the surface of the conductive thin film. The top gate electrode aligned with the bottom gate electrode is formed by etching the conductive thin film. The bottom gate electrode can be used as a mask, which may save the cost for manufacturing the transistor and improve the accuracy of alignment between the top gate electrode and the bottom gate electrode and the performance of the dual-gate thin film transistor.
摘要翻译：提供双栅极薄膜晶体管的设计和制造。晶体管的有源区和顶栅电极可以由透明薄膜材料制成。可以将光致抗蚀剂涂覆在透明导电薄膜的表面上，以形成顶栅电极。光在曝光期间来自底物的底部。在显影之后，在导电薄膜的表面上形成与底栅电极对准的光致抗蚀剂图案。通过蚀刻导电薄膜来形成与底栅电极对准的顶栅电极。底栅电极可以用作掩模，这可以节省制造晶体管的成本，并提高顶栅电极和底栅电极之间的对准精度以及双栅极薄膜晶体管的性能。

4. 发明授权

US09129992B2 Method for manufacturing transistor 有权
标题翻译：晶体管制造方法
公开(公告)号：US09129992B2
公开(公告)日：2015-09-08
申请号：US13376834
申请日：2011-06-13
申请人： Shengdong Zhang , Xin He , Longyan Wang
发明人： Shengdong Zhang , Xin He , Longyan Wang
IPC分类号： H01L21/00 , H01L29/66 , H01L29/786
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： Designs and fabrication of dual-gate thin film transistors are provided. An active region and a top gate electrode of the transistor can be made of a transparent thin film material. A photoresist can be coated onto a surface of the transparent conductive thin film for forming the top gate electrode. Light is from the bottom of the substrate during exposure. After the development, a photoresist pattern aligned with the bottom gate electrode is formed on the surface of the conductive thin film. The top gate electrode aligned with the bottom gate electrode is formed by etching the conductive thin film. The bottom gate electrode can be used as a mask, which may save the cost for manufacturing the transistor and improve the accuracy of alignment between the top gate electrode and the bottom gate electrode and the performance of the dual-gate thin film transistor.
摘要翻译：提供双栅极薄膜晶体管的设计和制造。晶体管的有源区和顶栅电极可以由透明薄膜材料制成。可以将光致抗蚀剂涂覆在透明导电薄膜的表面上，以形成顶栅电极。光在曝光期间来自底物的底部。在显影之后，在导电薄膜的表面上形成与底栅电极对准的光致抗蚀剂图案。通过蚀刻导电薄膜来形成与底栅电极对准的顶栅电极。底栅电极可以用作掩模，这可以节省制造晶体管的成本，并提高顶栅电极和底栅电极之间的对准精度以及双栅极薄膜晶体管的性能。

5. 发明授权

US06677263B2 Catalytic promoters for the catalytic cracking of hydrocarbons and the preparation thereof 有权
标题翻译：用于烃类催化裂化的催化促进剂及其制备方法
公开(公告)号：US06677263B2
公开(公告)日：2004-01-13
申请号：US09925381
申请日：2001-08-10
申请人： Longyan Wang , Xiaobo Wei , Danhe Liu , Daijun Hao , Jinlong Liu , Xuhui Gong
发明人： Longyan Wang , Xiaobo Wei , Danhe Liu , Daijun Hao , Jinlong Liu , Xuhui Gong
IPC分类号： B01J2900
CPC分类号： B01J29/405 , B01J29/40 , B01J2229/26 , B01J2229/42 , C10G11/05
摘要： Disclosed is a catalytic promoter for fluid catalytic cracking of hydrocarbons, comprising a HZSM-5 zeolite in an amount of 5-65 wt % based on the total weight of the catalytic promoter, said zeolite being modified with Zn and at least one element selected from the group consisting of P, Ga, Al, Ni and rare earth elements, the combined amount of said modifying elements being 0.01-10.37 wt % based on total weight of said modified HZSM-5 zeolite. A reduced olefin content in gasoline from catalytic cracking process, an increased gasoline octane number and an increased lower olefin yield can be obtained using said catalytic promoter.
摘要翻译：公开了用于烃的流化催化裂化的催化促进剂，其包含基于催化促进剂总重量为5-65重量％的HZSM-5沸石，所述沸石用Zn和至少一种选自由P，Ga，Al，Ni和稀土元素组成的组合物，所述改性元素的总量相对于所述改性HZSM-5沸石的总重为0.01-10.37wt％。使用所述催化促进剂可以获得来自催化裂化过程的汽油中烯烃含量降低，汽油辛烷值增加和烯烃产率降低。

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