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1. 发明授权

US08589829B2 Three-dimensional mask model for photolithography simulation 有权
公开(公告)号：US08589829B2
公开(公告)日：2013-11-19
申请号：US13736929
申请日：2013-01-08
申请人： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
发明人： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
摘要： A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

2. 发明申请

US20130139118A1 THREE-DIMENSIONAL MASK MODEL FOR PHOTOLITHOGRAPHY SIMULATION 有权
公开(公告)号：US20130139118A1
公开(公告)日：2013-05-30
申请号：US13736929
申请日：2013-01-08
申请人： Peng LIU , Yu CAO , Luoqi CHEN , Jun YE
发明人： Peng LIU , Yu CAO , Luoqi CHEN , Jun YE
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
摘要： A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

3. 发明授权

US07117478B2 System and method for lithography simulation 有权
公开(公告)号：US07117478B2
公开(公告)日：2006-10-03
申请号：US11037988
申请日：2005-01-18
申请人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
发明人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
IPC分类号： G06F17/50 , G03F1/00 , G21K5/00 , G06F19/00
CPC分类号： G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

4. 发明申请

US20050122500A1 System and method for lithography simulation 有权
公开(公告)号：US20050122500A1
公开(公告)日：2005-06-09
申请号：US11037988
申请日：2005-01-18
申请人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
发明人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
IPC分类号： G03B27/54 , G03F20060101 , G03F7/20 , G06F17/50 , G06K9/00 , G06T7/00
CPC分类号： G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

5. 发明申请

US20050097500A1 System and method for lithography simulation 有权
公开(公告)号：US20050097500A1
公开(公告)日：2005-05-05
申请号：US10981914
申请日：2004-11-04
申请人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
发明人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
IPC分类号： G03B27/54 , G03F20060101 , G03F7/20 , G06F17/50 , G06K9/00 , G06T7/00
CPC分类号： G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

6. 发明授权

US09588438B2 Optimization flows of source, mask and projection optics 有权
标题翻译：源，掩模和投影光学器件的优化流程
公开(公告)号：US09588438B2
公开(公告)日：2017-03-07
申请号：US13293116
申请日：2011-11-09
申请人： Duan-Fu Hsu , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
发明人： Duan-Fu Hsu , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
IPC分类号： G06F17/50 , G03F7/20
CPC分类号： G03F7/70066 , G03F7/705
摘要： Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.
摘要翻译：本发明的实施例提供了优化包括优化其中的投影光学元件的光刻投影装置的方法。目前的实施例包括几个流程，包括优化源，掩模和投影光学器件以及组合投影光学元件，掩模和源中的任何一个的各种顺序和迭代优化步骤。投影光学器件有时被广泛地称为“透镜”，因此优化过程可以被称为源掩模透镜优化（SMLO）。 SMLO可能比现有的源掩码优化过程（SMO）或其他不包括投影光学优化的优化过程更为理想，部分原因是在优化中包括投影光学器件可能会导致更大的工艺窗口，通过引入多个可调整的特性投影光学。投影光学元件可用于在光刻投影设备中形成波前，从而实现整个成像过程的像差控制。

7. 发明申请

US20140068530A1 FAST FREEFORM SOURCE AND MASK CO-OPTIMIZATION METHOD 审中-公开
标题翻译：快速FREEFORM源和MASK优化方法
公开(公告)号：US20140068530A1
公开(公告)日：2014-03-06
申请号：US14075917
申请日：2013-11-08
申请人： Luoqi CHEN , Jun YE , Yu CAO
发明人： Luoqi CHEN , Jun YE , Yu CAO
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70083 , G03F7/70125 , G03F7/70441 , G03F7/705 , G06F17/5068
摘要： The present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present invention allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present invention allows for free-form optimization, without the constraints required by conventional optimization techniques.
摘要翻译：本发明涉及光刻设备和工艺，更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。根据某些方面，本发明通过允许直接计算成本函数的梯度来显着加快优化的收敛。根据其他方面，本发明允许同时优化源和掩模，从而显着加速整体收敛。根据另外的方面，本发明允许自由形式优化，而不需要常规优化技术所要求的限制。

8. 发明申请

US20130066716A1 SENTIMENT-TARGETING FOR ONLINE ADVERTISEMENT 审中-公开
标题翻译：感谢在线广告的宣传
公开(公告)号：US20130066716A1
公开(公告)日：2013-03-14
申请号：US13230720
申请日：2011-09-12
申请人： Luoqi Chen , Jun Ye , Ya Luo , Yu Cao , Wei Zhuang , Hanying Feng
发明人： Luoqi Chen , Jun Ye , Ya Luo , Yu Cao , Wei Zhuang , Hanying Feng
IPC分类号： G06Q30/00
CPC分类号： G06Q30/00
摘要： The various embodiments described in the present disclosure, in at least one aspect, relate to computer-implemented methods of online advertisement. In one embodiment, a method includes, in response to receiving a request for an ad to be provided to a user in an online session, identifying a plurality of ads as candidates for consideration, determining one or more sentiments of a content of the online session, and ranking the plurality of identified ads based at least in part on (i) a correlation between the content of the online session and a content of each identified ad, and (ii) a correlation between the one or more sentiments of the content of the online session and the content of each identified ad.
摘要翻译：在至少一个方面，在本公开中描述的各种实施例涉及计算机实现的在线广告的方法。在一个实施例中，一种方法包括响应于在在线会话中接收到要提供给用户的广告的请求，将多个广告标识为候选作为考虑，确定在线会话的内容的一个或多个情绪并且至少部分地基于（i）在线会话的内容与每个所识别的广告的内容之间的相关性，以及（ii）所述内容的一个或多个情绪之间的相关性来对多个所识别的广告进行排名在线会话和每个已识别广告的内容。

9. 发明申请

US20120254813A1 Integration of Lithography Apparatus and Mask Optimization Process with Multiple Patterning Process 有权
标题翻译：光刻设备与掩模优化过程的多重图案化处理
公开(公告)号：US20120254813A1
公开(公告)日：2012-10-04
申请号：US13439692
申请日：2012-04-04
申请人： Luoqi Chen , Jun Ye , Hong Chen
发明人： Luoqi Chen , Jun Ye , Hong Chen
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/70 , G03F7/70433 , G03F7/70466 , G03F7/705 , G03F7/70508 , G03F7/707
摘要： The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.
摘要翻译：本发明涉及光刻设备和工艺，更具体地涉及用于将目标图案打印超出光刻设备的分辨率限制的多重图形化光刻技术。公开了一种通过光刻处理将待成像的图案图案分割成多个子图案的方法，其中该方法包括分割步骤，其被配置为意识到在以下过程中的至少一个之间的共优化的要求：用于光刻工艺的光刻设备的子图案和光学设置。包括基于衍射特征分析的智能图案选择的设备特征优化技术可以被集成到多个图案化工艺流程中。

10. 发明申请

US20120216156A1 Method of Pattern Selection for Source and Mask Optimization 有权
标题翻译：源和掩码优化的模式选择方法
公开(公告)号：US20120216156A1
公开(公告)日：2012-08-23
申请号：US13505286
申请日：2010-10-26
申请人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
发明人： Hua-Yu Liu , Luoqi Chen , Hong Chen , Zhi-Pan Li , Jun Ye , Min-Chun Tsai , Youping Zhang , Yen-Wen Lu , Jiangwei Li
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要： The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
摘要翻译：本发明涉及从设计中选择模式子集的方法，以及执行源和掩码优化的方法以及用于执行从设计中选择模式子集的方法的计算机程序产品。根据某些方面，本发明能够覆盖整个设计，同时降低计算成本，通过智能地从设计中选择图案子集，其中设计的设计或修改被配置为经由光刻成像到衬底上处理。从设计中选择图案子集的方法包括从与设计的预定义表示相关的设计中识别一组图案。通过根据该方法选择模式子集，所选择的模式子集构成与模式集合相似的设计表示。

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