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    • 1. 发明授权
    • Conveyor chain
    • 输送链
    • US09004269B2
    • 2015-04-14
    • US13323953
    • 2011-12-13
    • Masatsugu UenoMakoto Fujiwara
    • Masatsugu UenoMakoto Fujiwara
    • B65G45/08F16G13/06B65G17/38
    • F16G13/06B65G17/38B65G45/08F16C19/26F16C33/605F16C33/6677F16C33/78F16C2326/58
    • A conveyor chain constructed so as to prevent a leakage of lubricant oil to the outside. The conveyor chain comprises a plurality of bearing elements operable to revolve in a raceway between an outer circumferential surface of a bush and an inner circumferential surface of a roller. A pair of right and left thrust bearing annular members are press-fitted onto the outer circumferential surface of the bush and are positioned between the inner side surface of an inner link plate and the outwardly-facing end surfaces of the bearing elements. Annular sealing members for sealing lubricant oil within bearing element raceway are disposed between the inner circumferential surface of the roller and an inner circumferential surface of the thrust bearing annular member. The sealing members slidably contact but are not deformed by the inner circumferential surface of the roller.
    • 输送链,其构造为防止润滑油向外部泄漏。 输送机链条包括多个轴承元件,其可操作以在套筒的外周面和辊的内周面之间的滚道中旋转。 一对左右推力轴承环形构件压配合到衬套的外周面上,并且位于内连接板的内侧表面和轴承元件的向外端面之间。 用于密封轴承元件滚道内的润滑油的环形密封件设置在滚子的内圆周表面和止推轴承环形构件的内圆周表面之间。 密封构件可滑动地接触,但不会被辊的内周面变形。
    • 7. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US08134209B2
    • 2012-03-13
    • US12640658
    • 2009-12-17
    • Atsushi YagishitaMakoto FujiwaraHirohisa KawasakiMariko Takayanagi
    • Atsushi YagishitaMakoto FujiwaraHirohisa KawasakiMariko Takayanagi
    • H01L27/12
    • H01L29/785H01L21/823431H01L27/0886H01L29/66795
    • Multi-gate metal oxide silicon transistors and methods of making multi-gate metal oxide silicon transistors are provided. The multi-gate metal oxide silicon transistor contains a bulk silicon substrate containing one or more convex portions between shallow trench regions; one or more dielectric portions over the convex portions; one or more silicon fins over the dielectric portions; a shallow trench isolation layer in the shallow trench isolation regions; and a gate electrode. The upper surface of the shallow trench isolation layer can be located below the upper surface of the convex portion, or the upper surface of the shallow trench isolation layer can be located between the lower surface and the upper surface of first dielectric layer. The multi-gate metal oxide silicon transistor can contain second spacers adjacent to side surfaces of the convex portions in a source/drain region.
    • 提供多栅极金属氧化物硅晶体管和制造多栅极金属氧化物硅晶体管的方法。 多栅极金属氧化物硅晶体管包含在浅沟槽区域之间包含一个或多个凸部的体硅衬底; 一个或多个在凸部上的电介质部分; 电介质部分上的一个或多个硅散热片; 在浅沟槽隔离区域的浅沟槽隔离层; 和栅电极。 浅沟槽隔离层的上表面可以位于凸部的上表面下方,或者浅沟槽隔离层的上表面可以位于第一介电层的下表面和上表面之间。 多栅极金属氧化物硅晶体管可以包含与源极/漏极区域中的凸部的侧表面相邻的第二间隔物。