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1. 发明授权

US08542521B2 Semiconductor storage device including memory cells capable of holding data 有权
标题翻译：包括能够保存数据的存储单元的半导体存储装置
公开(公告)号：US08542521B2
公开(公告)日：2013-09-24
申请号：US13230073
申请日：2011-09-12
申请人： Makoto Hamada
发明人： Makoto Hamada
IPC分类号： G11C11/00
CPC分类号： G11C11/5685 , G11C7/02 , G11C8/04 , G11C8/10 , G11C13/0007 , G11C13/004 , G11C13/0061 , G11C16/0483 , G11C2211/5644
摘要： According to one embodiment, a semiconductor storage device includes first cells, first bit and first word, and first sense. The first cells are capable of holding 2-level or higher-level data. The first bit and first word are capable of selecting the first cells. The first sense detects a first current. The first sense includes a first supply unit, a first accumulation unit, a detector, and a counter. The first supply unit supplies a second current when the data is read. The first accumulation unit accumulates an amount of charge. The detector detects the potential the amount of charge. The counter counts output from the detector. The counter includes a second supply unit, a second accumulation unit, and a sensing unit. The second supply unit charges a first node. The second accumulation unit accumulates a charge. The sensing unit detects the amount of charge of the second accumulation unit.
摘要翻译：根据一个实施例，半导体存储装置包括第一单元，第一位和第一字，以及第一感测。第一个单元能够保持2级或更高级别的数据。第一位和第一个字能够选择第一个单元格。第一感觉检测到第一电流。第一感测包括第一供应单元，第一积聚单元，检测器和计数器。当读取数据时，第一个供应单元提供第二个电流。第一累积单元累积一定的费用。检测器检测潜在的电荷量。计数器对检测器的输出进行计数。计数器包括第二供应单元，第二累积单元和感测单元。第二个供应单元为第一个节点充电。第二累积单元积累费用。感测单元检测第二累积单元的电荷量。

2. 发明申请

US20130155779A1 SEMICONDUCTOR STORAGE DEVICE, HOST CONTROLLING THE SAME, AND MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR STORAGE DEVICE AND THE HOST 有权
标题翻译：控制其主机的半导体存储设备，包括半导体存储设备和主机的存储系统
公开(公告)号：US20130155779A1
公开(公告)日：2013-06-20
申请号：US13325479
申请日：2011-12-14
申请人： Makoto HAMADA
发明人： Makoto HAMADA
IPC分类号： G11C7/10
CPC分类号： G11C13/0021 , G11C7/22 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C2207/2245 , G11C2213/71 , G11C2213/72
摘要： According to one embodiment, a semiconductor storage device includes a memory cell array, a data latch group. The memory cell array comprises a plurality of memory cells. The data latch group holds a first address or a second address of the memory cell and data. The data latch group comprises a first data latch unit and a second data latch unit, the first data latch unit holds write data to be written to any of the memory cells or read data read from the memory cell array and the first address or the second address, while the second data latch unit holds second write data or read data.
摘要翻译：根据一个实施例，半导体存储装置包括存储单元阵列，数据锁存器组。存储单元阵列包括多个存储单元。数据锁存组保存存储单元和数据的第一地址或第二地址。数据锁存组包括第一数据锁存单元和第二数据锁存单元，第一数据锁存单元保持要写入任何存储单元的写数据或从存储单元阵列读出的读数据和第一地址或第二数据锁存单元而第二数据锁存单元保持第二写数据或读数据。

3. 发明授权

US07663932B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07663932B2
公开(公告)日：2010-02-16
申请号：US11965154
申请日：2007-12-27
申请人： Makoto Hamada , Hiroshi Maejima
发明人： Makoto Hamada , Hiroshi Maejima
IPC分类号： G11C16/06
CPC分类号： G11C16/34
摘要： A nonvolatile semiconductor memory device capable of reading and verifying a negative threshold cell by biasing a source line and a well line to a positive voltage. The nonvolatile semiconductor memory device includes a precharge circuit which precharges a bit line to the same voltage as that of the source line in reading and verifying the negative threshold cell.
摘要翻译：一种非易失性半导体存储器件，其能够通过将源极线和阱线偏置为正电压来读取和验证负阈值电池。非易失性半导体存储器件包括预充电电路，该预充电电路在读取和验证负阈值单元时将位线预充电到与源极线相同的电压。

4. 发明申请

US20090273976A1 SEMICONDUCTOR MEMORY DEVICE WHICH INCLUDES MEMORY CELL HAVING CHARGE ACCUMULATION LAYER AND CONTROL GATE 有权
标题翻译：半导体存储器件，其中包括具有充电累积层和控制栅的存储单元
公开(公告)号：US20090273976A1
公开(公告)日：2009-11-05
申请号：US11955831
申请日：2007-12-13
申请人： Hiroshi Maejima , Makoto Hamada
发明人： Hiroshi Maejima , Makoto Hamada
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C11/5642 , G11C16/0483 , G11C16/26
摘要： A semiconductor memory device includes memory cells, a source line, a word line, a bit line, and a driver circuit. The memory cells are formed on a semiconductor layer and have a charge accumulation layer and a control gate on the charge accumulation layer. The word line is connected to gate of the memory cell. The bit line is electrically connected to a drain of the memory cell. The source line is electrically connected to a source of the memory cell. The driver circuit varies potential of the semiconductor layer in conjunction with potential of the source line.
摘要翻译：半导体存储器件包括存储单元，源极线，字线，位线和驱动电路。存储单元形成在半导体层上，并且在电荷累积层上具有电荷累积层和控制栅极。字线连接到存储单元的门。位线电连接到存储器单元的漏极。源极线电连接到存储器单元的源极。驱动器电路结合源极线的电位改变半导体层的电位。

5. 发明申请

US20090168542A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20090168542A1
公开(公告)日：2009-07-02
申请号：US11965154
申请日：2007-12-27
申请人： Makoto Hamada , Hiroshi Maejima
发明人： Makoto Hamada , Hiroshi Maejima
IPC分类号： G11C16/06
CPC分类号： G11C16/34
摘要： A nonvolatile semiconductor memory device capable of reading and verifying a negative threshold cell by biasing a source line and a well line to a positive voltage. The nonvolatile semiconductor memory device includes a precharge circuit which precharges a bit line to the same voltage as that of the source line in reading and verifying the negative threshold cell.
摘要翻译：一种非易失性半导体存储器件，其能够通过将源极线和阱线偏置为正电压来读取和验证负阈值电池。非易失性半导体存储器件包括预充电电路，该预充电电路在读取和验证负阈值单元时将位线预充电到与源极线相同的电压。

6. 发明申请

US20090116292A1 SEMICONDUCTOR MEMORY DEVICE WHICH INCLUDES MEMORY CELL HAVING CHARGE ACCUMULATION LAYER AND CONTROL GATE 有权
标题翻译：半导体存储器件，其中包括具有充电累积层和控制栅的存储单元
公开(公告)号：US20090116292A1
公开(公告)日：2009-05-07
申请号：US11934304
申请日：2007-11-02
申请人： Hiroshi Maejima , Makoto Hamada
发明人： Hiroshi Maejima , Makoto Hamada
IPC分类号： G11C16/08
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5642 , G11C16/10 , G11C16/30
摘要： A semiconductor memory device includes a memory cell unit, word lines, a driver circuit, and a voltage generator. The memory cell unit includes a plurality of memory cells connected in series. Each of the memory cells includes a charge accumulation layer and a control gate. The word lines are connected to the control gate. The driver circuit selects one of the word lines and applies voltages to a selected word line and unselected word lines. The voltage generator includes first and second charge pump circuits and outputs a voltage generated by the first and second charge pump circuits to the driver circuit. The first charge pump circuit is exclusively used to generate a voltage for a first word line. The first word line is one of the unselected word lines located adjacent to the selected word line.
摘要翻译：半导体存储器件包括存储单元单元，字线，驱动电路和电压发生器。存储单元单元包括串联连接的多个存储单元。每个存储单元包括电荷累积层和控制栅极。字线连接到控制门。驱动电路选择字线之一，并向所选择的字线和未选字线施加电压。电压发生器包括第一和第二电荷泵电路，并将由第一和第二电荷泵电路产生的电压输出到驱动器电路。第一电荷泵电路专门用于产生第一字线的电压。第一个字线是与选定字线相邻的未选字线之一。

7. 发明申请

US20090059670A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20090059670A1
公开(公告)日：2009-03-05
申请号：US11847854
申请日：2007-08-30
申请人： Hiroshi Maejima , Makoto Hamada
发明人： Hiroshi Maejima , Makoto Hamada
IPC分类号： G11C16/00
CPC分类号： G11C16/08 , G11C16/0483 , G11C16/26 , G11C16/30
摘要： There is provided a nonvolatile semiconductor memory device which can read and verify a cell with a negative threshold voltage by biasing voltages of a source line and well line to a positive voltage. The nonvolatile semiconductor memory device includes a voltage control circuit which applies a select gate voltage obtained by adding the biased positive voltage to a voltage set at read time of a cell with a positive threshold voltage to a select gate at a read time and verify time for the cell with the negative threshold voltage.
摘要翻译：提供了一种非易失性半导体存储器件，其可以通过将源极线和阱线的电压偏压到正电压来读取和验证具有负阈值电压的电池。非易失性半导体存储器件包括电压控制电路，该电压控制电路通过在读取时间向选择栅极施加将偏置正电压与具有正阈值电压的单元的读取时间设置的电压相加而获得的选择栅极电压，并验证时间电池具有负阈值电压。

8. 发明授权

US07172048B2 Airbag apparatus for pedestrian protection 失效
标题翻译：用于行人保护的气囊装置
公开(公告)号：US07172048B2
公开(公告)日：2007-02-06
申请号：US10473156
申请日：2003-03-27
申请人： Makoto Hamada , Toshiaki Hosoya , Hideya Innami
发明人： Makoto Hamada , Toshiaki Hosoya , Hideya Innami
IPC分类号： B60K28/10 , B60R21/34
CPC分类号： B60R21/36 , B60R21/2338 , B60R2021/23316 , B60R2021/23324 , B60R2021/23386
摘要： An airbag apparatus for pedestrian protection 18 including an airbag body 22 disposed along a vertical direction is disposed in an upper portion 16A of each of right and left front pillars 16. The expansion of the airbag body 22 toward the outer side of the vehicle is restrained to a predetermined amount by a cloth 22C connecting an attachment portion 22A of the airbag body 22 with a sewn portion 22B when the airbag body 22 is expanded. Thus, the airbag body 22 is expanded along the outer peripheral portion. In addition, a portion of the airbag body 22 expanded toward approximately the outer side in the lateral direction contacts a curved portion 30F expanded toward the inner side in the lateral direction, which is in a deployment portion 30A of a garnish panel 30. Thus, the airbag body 22 is expanded toward approximately the inner side in the lateral direction to a large extent.
摘要翻译：在左右前支柱16的上部16A配置有包括沿铅直方向配置的气囊主体22的行人保护用安全气囊装置18，气囊本体22向车辆外侧的膨胀为当安全气囊本体22膨胀时，通过连接安全气囊本体22的安装部分22A与缝合部分22B的布22C来限制预定量。因此，气囊本体22沿着外周部扩张。此外，安全气囊本体22在横向方向大致向外侧延伸的部分与在装饰面板30的配置部30A中的向横向内侧膨胀的弯曲部30F接触。因此，气囊主体22在大的方向上向左右方向的大致内侧扩大。

9. 发明授权

US06938715B2 Hood structure of motor vehicle 有权
标题翻译：汽车罩罩结构
公开(公告)号：US06938715B2
公开(公告)日：2005-09-06
申请号：US10327978
申请日：2002-12-26
申请人： Makoto Hamada , Hiroyuki Takahashi
发明人： Makoto Hamada , Hiroyuki Takahashi
IPC分类号： B62D25/10 , B60R21/01 , B60R21/16 , B60R21/231 , B60R21/233 , B60R21/34 , B60R21/36 , B60R21/38 , B62D25/12 , B62D21/12
CPC分类号： B60R21/0136 , B60R21/2342 , B60R21/36 , B60R21/38 , B60R2021/23332
摘要： If a control device determines that a collision during a vehicle run has been detected on the basis of a combination of an output signal of a sensor and a vehicle speed signal, an inflator is actuated so as to inflate and deploy an air bag body disposed in an apron upper member. When inflated and deployed, the air bag body raises a longitudinal-direction central portion of a hood. At this time, the longitudinal-direction central portion of the hood bends with a depression serving as an origin of bending.
摘要翻译：如果控制装置基于传感器的输出信号和车速信号的组合来确定在车辆行驶期间的碰撞已经被检测到，则充气机被致动以便使设置在围裙上部构件。当充气展开时，气囊主体升起罩的纵向中心部分。此时，发动机罩的纵向中心部分以作为弯曲起点的凹部弯曲。

10. 发明授权

US06827170B2 Hood airbag assembly 失效
标题翻译：安全气囊组件
公开(公告)号：US06827170B2
公开(公告)日：2004-12-07
申请号：US10262070
申请日：2002-10-02
申请人： Makoto Hamada , Hiroyuki Takahashi
发明人： Makoto Hamada , Hiroyuki Takahashi
IPC分类号： B60R2134
CPC分类号： B60R21/36 , B60R21/215
摘要： An airbag case that stores an airbag is disposed on a hood inner panel at a location close to an engine compartment. The airbag case is not fixed directly to a hood outer panel. An opening is formed in a portion of the hood outer panel located on a rear side of the airbag case as viewed in the longitudinal direction of the vehicle. In the opening, there is provided a hood garnish panel that turns over rearward upon deployment of the airbag.
摘要翻译：在靠近发动机舱的位置处，在发动机罩内板上设置有安全气囊的安全气囊。安全气囊外壳不直接固定在发动机罩外板上。在车辆的纵向观察时，位于安全气囊的后侧的发动机罩外板的一部分形成开口。在开口中，设置了一个在安全气囊展开时向后翻转的罩装饰板。

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