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    • 9. 发明申请
    • INFORMATION PROCESSING PROGRAM, INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD
    • 信息处理程序,信息处理设备和信息处理方法
    • US20110074546A1
    • 2011-03-31
    • US12890813
    • 2010-09-27
    • Ryo SHIMIZUMakoto Kondo
    • Ryo SHIMIZUMakoto Kondo
    • G08B5/22
    • H04M1/72563G06Q10/10H04M1/72566H04M1/72572
    • A card (which is displayed on a screen and is thus operated, and has a single function) is output to a display of an information processing device through a shell (an OS of the card and a seal), and the seal (a display associated with an action such as an output) can be put on a part of the card. The shell put on the card is written to a seal DB and the seal put on the card is displayed in accordance with information of the seal DB when the card is to be output. The seal corresponds to a seal application depending on each type. When an object of the card having the seal put thereon is coincident with a predetermined condition, the corresponding seal application is activated by the shell so that a predetermined action such as a notice or an output of a ring tone is executed.
    • 通过外壳(卡的OS和密封件)将卡(其在屏幕上显示并且被操作并具有单个功能)输出到信息处理设备的显示器,并且密封件(显示器 与诸如输出的动作相关联)可以放在卡的一部分上。 放在卡上的外壳被写入密封DB,并且当卡被输出时,根据密封DB的信息显示放置在卡上的密封件。 密封对应于根据每种类型的密封应用。 当具有放置在其上的密封卡的物体与预定条件一致时,相应的密封应用由外壳启动,从而执行诸如铃声的通知或输出之类的预定动作。
    • 10. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20080239601A1
    • 2008-10-02
    • US12059681
    • 2008-03-31
    • Naoyuki MiyazawaMakoto Kondo
    • Naoyuki MiyazawaMakoto Kondo
    • H02H9/00
    • H01L27/0285H03F1/523
    • A semiconductor device includes a pad; an internal circuit; a protection FET that has a drain connected to the pad, and a source connected to a reference potential; a first resistive element that is connected between the drain of the protection FET and the internal circuit, and has a larger resistance value than the value of the series resistance between the drain of the protection FET and the pad; a capacitive element that is connected between the pad and the gate of the protection FET; and a second resistive element that is connected between the gate of the protection FET and the source of the protection FET.
    • 半导体器件包括衬垫; 内部电路; 保护FET,其具有连接到焊盘的漏极,以及连接到参考电位的源极; 连接在保护FET的漏极和内部电路之间的第一电阻元件,并且具有比保护FET的漏极与焊盘之间的串联电阻值更大的电阻值; 电容元件,其连接在所述焊盘和所述保护FET的栅极之间; 以及连接在保护FET的栅极和保护FET的源极之间的第二电阻元件。