专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 外观设计

USD796091S1 Rear combination lamp for a motor vehicle 有权
公开(公告)号：USD796091S1
公开(公告)日：2017-08-29
申请号：US29565423
申请日：2016-05-20
申请人： Manabu Kojima , Taketoshi Aoki
设计人： Manabu Kojima , Taketoshi Aoki

2. 发明授权

US09074932B2 Spectrum data correction system and spectrum data correction method 有权
标题翻译：频谱数据校正系统和频谱数据校正方法
公开(公告)号：US09074932B2
公开(公告)日：2015-07-07
申请号：US12942621
申请日：2010-11-09
申请人： Manabu Kojima , Gentarou Ishihara
发明人： Manabu Kojima , Gentarou Ishihara
IPC分类号： G01J3/28
CPC分类号： G01J3/28
摘要： An object of the invention is to automatically remove noise out of an input spectrum data while rounding in spectral shape is being suppressed. The spectrum data correction system wherein a noise quantity is detected on the basis of a difference in value between an extremal point of measurement data-blocks making up input spectrum data, and a mean value of measurement data-blocks in the vicinity of the extremal point, and a count of moving-average points of measurement data-blocks subjected to moving average processing is controlled according to the noise quantity, the spectrum data correction system comprises means for using an optical power, detected by a photo-detector of an optical spectrum analyzer, as the measurement data-block, thereby controlling the count of the moving-average points of the measurement data-blocks according to magnitude of a signal level of the measurement data-block.
摘要翻译：本发明的目的是在抑制光谱形状的四舍五入的同时自动地从输入光谱数据中去除噪声。频谱数据校正系统，其中基于组成输入频谱数据的测量数据块的极值点与极值点附近的测量数据块的平均值之间的值的差异来检测噪声量，并且根据噪声量来控制经受移动平均处理的移动平均点测量数据块的数量，频谱数据校正系统包括使用光功率的光学检测器检测的光谱的装置分析器，作为测量数据块，从而根据测量数据块的信号电平的大小控制测量数据块的移动平均点的计数。

3. 发明授权

US08125638B2 Spectroscope 有权
标题翻译：光谱仪
公开(公告)号：US08125638B2
公开(公告)日：2012-02-28
申请号：US12426366
申请日：2009-04-20
申请人： Toshikazu Yamamoto , Tsutomu Kaneko , Manabu Kojima
发明人： Toshikazu Yamamoto , Tsutomu Kaneko , Manabu Kojima
IPC分类号： G01J3/28
CPC分类号： G01J3/02 , G01J3/0208 , G01J3/0286 , G01J3/0291
摘要： An improvement is added to a spectroscope for performing wavelength dispersion of measured light with a wavelength dispersion element and receiving the light at a light reception element. The spectroscope has a first compound lens made up of a plurality of lenses for converting measured light into parallel light and emitting the parallel light to the wavelength dispersion element; a second compound lens made up of a plurality of lenses for gathering the measured light subjected to the wavelength dispersion in the wavelength dispersion element and causing the light reception element to receive the light; and a base for fixing the wavelength dispersion element, the first compound lens, and the second compound lens. The linear expansion coefficient of the compound focal length of the first compound lens, the linear expansion coefficient of the compound focal length of the second compound lens, and the linear expansion coefficient of a material forming the base are substantially equal.
摘要翻译：增加了用于利用波长色散元件进行测量光的波长色散并在光接收元件处接收光的分光镜。该分光镜具有由多个透镜构成的第一复合透镜，用于将测量的光转换成平行光并将平行光发射到波长色散元件; 由多个透镜构成的第二复合透镜，用于聚集经受波长色散元件中的波长色散的测量光，并使光接收元件接收光; 以及用于固定波长色散元件，第一复合透镜和第二复合透镜的基座。第一复合透镜的复合焦距的线膨胀系数，第二复合透镜的复合焦距的线膨胀系数和形成基底的材料的线膨胀系数基本相等。

4. 发明授权

US06906798B2 Multi-path monochromator 失效
标题翻译：多路单色仪
公开(公告)号：US06906798B2
公开(公告)日：2005-06-14
申请号：US10345672
申请日：2003-01-16
申请人： Manabu Kojima , Takeshi Ono
发明人： Manabu Kojima , Takeshi Ono
IPC分类号： G01J3/18
CPC分类号： G01J3/02 , G01J3/021 , G01J3/18
摘要： In order to provide a multi-path monochromator capable of reducing the size of optical parts with a high resolution and a wide dynamic range, the multi-path monochromator has a lens 2 used as a first collimator for converting an incident light into a parallel light, a diffraction grating 4 for diffracting an output light outputted from the lens 2, plane mirrors 3 and 5 for reflecting a diffraction light diffracted by the diffraction grating 4 to return the diffraction light back to a same path, a parabolic mirror 7 used as a second collimator for collecting a diffraction light which is again diffracted by the diffraction grating into which a reflected light is again outputted from the plane mirror, and an output slit positioned at a focal position of the parabolic mirror 7. The parabolic mirror 7 used as the second collimator has a focal length which is longer than a focal length of the lens used as the first collimator.
摘要翻译：为了提供能够以高分辨率和宽动态范围减小光学部件的尺寸的多路单色仪，多路单色仪具有用作第一准直器的透镜2，用于将入射光转换成平行光用于衍射从透镜2输出的输出光的衍射光栅4，用于反射由衍射光栅4衍射的衍射光的平面镜3和5，以将衍射光返回到相同的路径，抛物面镜7用作用于收集由衍射光栅再次衍射的衍射光的第二准直器，反射光再次从平面镜输出到其中;以及输出狭缝，位于抛物面镜7的焦点位置。用作第二准直仪的抛物面镜7具有比用作第一准直仪的透镜的焦距长的焦距。

5. 外观设计

USD669400S1 Automobile 有权
公开(公告)号：USD669400S1
公开(公告)日：2012-10-23
申请号：US29400478
申请日：2011-08-29
申请人： Manabu Kojima , Hisataka Tokizane , Tetsu Endoh
设计人： Manabu Kojima , Hisataka Tokizane , Tetsu Endoh

6. 外观设计

USD668999S1 Motor vehicle and/or toy replica thereof 有权
公开(公告)号：USD668999S1
公开(公告)日：2012-10-16
申请号：US29400477
申请日：2011-08-29
申请人： Takanori Ito , Kuniaki Toyooka , Tetsu Endoh , Hisataka Tokizane , Manabu Kojima
设计人： Takanori Ito , Kuniaki Toyooka , Tetsu Endoh , Hisataka Tokizane , Manabu Kojima

7. 发明授权

US07705984B2 Spectroscope having spectroscopic paths with individual collimators 有权
标题翻译：光谱仪具有独立准直仪的光谱路径
公开(公告)号：US07705984B2
公开(公告)日：2010-04-27
申请号：US12354288
申请日：2009-01-15
申请人： Manabu Kojima , Tsutomu Kaneko , Toshikazu Yamamoto
发明人： Manabu Kojima , Tsutomu Kaneko , Toshikazu Yamamoto
IPC分类号： G01J3/28
CPC分类号： G01J3/04 , G01J3/02 , G01J3/0208 , G01J3/0262 , G01J3/0291 , G01J3/18
摘要： A spectroscope includes a diffraction grating having a plurality of ruled parallel lines; and a plurality of spectroscopic paths, each of which has a collimator for collimating incident light, emits the collimated light to the diffraction grating, and emits return light, which returns from the diffraction grating, through a slit provided on the path. In the spectroscope, measured light is emitted through the plurality of spectroscopic paths so as to extract light which is included in the measured light and has a predetermined wavelength; and the collimators of the spectroscopic paths are arranged so that irradiation areas of light emitted from the collimators are offset from each other at least in a direction along the ruled parallel lines. The collimators of the spectroscopic paths may be arranged so that incident angles of light emitted from the collimators coincide with each other.
摘要翻译：分光镜包括具有多条划线平行线的衍射光栅; 以及多个分光路径，每个分光路径具有用于准直入射光的准直器，向衍射光栅发射准直光，并且从衍射光栅返回的返回光通过设置在路径上的狭缝。在分光镜中，测量的光通过多个分光路径发射，以便提取包含在测量光中并具有预定波长的光; 并且分光路径的准直器被布置成使得从准直器发射的光的照射面至少沿着划线的平行线的方向彼此偏移。分光路径的准直器可以被布置成使得从准直仪发射的光的入射角彼此一致。

8. 发明申请

US20090050979A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090050979A1
公开(公告)日：2009-02-26
申请号：US12194052
申请日：2008-08-19
申请人： Manabu KOJIMA
发明人： Manabu KOJIMA
IPC分类号： H01L27/088
CPC分类号： H01L21/823807 , H01L21/823871 , H01L29/7843
摘要： A semiconductor device having a semiconductor substrate, a first impurity region including a first conductive impurity formed in the semiconductor substrate, a first transistor and a second transistor formed in the first impurity region, a first stress film and a second stress having a first stress over the first transistor a and the second transistor, and a third stress film having a second stress different from the first stress provided in the first impurity region between the first stress film and the second stress film.
摘要翻译：一种具有半导体衬底的半导体器件，包括在半导体衬底中形成的第一导电杂质的第一杂质区，形成在第一杂质区中的第一晶体管和第二晶体管，第一应力膜和具有第一应力的第二应力第一晶体管a和第二晶体管，以及具有与在第一应力膜和第二应力膜之间的第一杂质区域中提供的第一应力不同的第二应力的第三应力膜。

9. 发明申请

US20050236667A1 Manufacture of semiconductor device with selective amorphousizing 审中-公开
标题翻译：具有选择性非晶化的半导体器件的制造
公开(公告)号：US20050236667A1
公开(公告)日：2005-10-27
申请号：US11169666
申请日：2005-06-30
申请人： Kenichi Goto , Hiroshi Morioka , Manabu Kojima , Kenichi Okabe
发明人： Kenichi Goto , Hiroshi Morioka , Manabu Kojima , Kenichi Okabe
IPC分类号： H01L21/265 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L29/78 , H01L29/45
CPC分类号： H01L21/26506 , H01L21/28035 , H01L21/823814 , H01L21/823842 , H01L29/6659 , H01L29/7833
摘要： A p-channel MOS transistor capable of lowering the height of a gate electrode, suppressing penetration of boron through a gate insulating film, and reducing a source/drain parasitic capacitance. A method for manufacturing a semiconductor device comprises the steps of: (a) forming a gate insulating film on each surface of active regions including an n-type active region; (b) depositing a poly-Si gate electrode layer on the gate insulating film; (c) implanting amorphousizing ions, Ge or Si, to transform an upper portion of the gate electrode layer into amorphous phase; (d) patterning the gate electrode layer to form a gate electrode; (e) forming side wall spacers on side walls of the gate electrode at a temperature not crystallizing the amorphous layer; and (f) implanting p-type impurity ions, B, into the n-type active region by using as a mask the gate electrode and the side wall spacers, to form high concentration source/drain regions.
摘要翻译：能够降低栅电极的高度的p沟道MOS晶体管，抑制硼穿过栅极绝缘膜的渗透，并降低源/漏寄生电容。一种制造半导体器件的方法包括以下步骤：（a）在包括n型有源区的有源区的每个表面上形成栅极绝缘膜; （b）在栅极绝缘膜上沉积多晶硅栅电极层; （c）注入非晶化离子Ge或Si，以将栅电极层的上部转变成非晶相; （d）图案化栅电极层以形成栅电极; （e）在不使非晶层结晶的温度下，在栅电极的侧壁上形成侧壁间隔物; 和（f）通过使用栅电极和侧壁间隔物作为掩模将p型杂质离子B注入到n型有源区中，以形成高浓度源/漏区。

10. 发明授权

US06958279B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06958279B2
公开(公告)日：2005-10-25
申请号：US10642158
申请日：2003-08-18
申请人： Manabu Kojima
发明人： Manabu Kojima
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092
CPC分类号： H01L29/6659 , H01L21/823814 , H01L21/823864 , H01L29/665 , H01L29/6653 , H01L29/6656
摘要： A gate insulator film and a gate electrode are formed on a semiconductor substrate, and then a layered stack of a SiO2 film and a SiN film is formed on the entire surface. Subsequently, sidewalls made of polysilicon film are formed adjacent to the gate electrode via the layered stack of the SiO2 film and the SiN film. Then, using as a mask the gate electrode, portions of the layered stack adjacent to the gate electrode, and the sidewalls, an ion dopant is implanted into a device active region to thereby form source/drains therein, and the sidewalls are then removed. At this stage, since the gate insulator film is completely covered with the layered stack, the gate insulator film is not ablated or retreated even on a device isolation insulator film.
摘要翻译：在半导体衬底上形成栅极绝缘体膜和栅电极，然后在整个表面上形成SiO 2膜和SiN膜的叠层体。随后，通过SiO 2膜和SiN膜的层叠堆叠形成由多晶硅膜制成的侧壁与栅电极相邻。然后，使用栅极电极，与栅电极相邻的层叠堆叠部分和侧壁，将离子掺杂剂注入器件有源区，从而在其中形成源极/漏极，然后除去侧壁。在这个阶段，由于栅极绝缘膜被层叠的堆叠完全覆盖，即使在器件隔离绝缘膜上，栅极绝缘膜也不会烧蚀或退火。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式