会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • THIN FILM FIELD-EFFECT TRANSISTOR AND DISPLAY DEVICE
    • 薄膜场效应晶体管和显示器件
    • US20100059747A1
    • 2010-03-11
    • US12554989
    • 2009-09-08
    • Masaya NAKAYAMANaoki KOITO
    • Masaya NAKAYAMANaoki KOITO
    • H01L29/786H01L33/00
    • H01L29/7869H01L27/1225H01L27/3262H01L29/78681H01L29/78696H01L51/0081H01L51/0085H01L51/0545
    • The invention provides a thin film field-effect transistor including, on a substrate, a gate electrode, a gate insulating film, an active layer including an oxide semiconductor, a source electrode, a drain electrode, a resistive layer including an oxide semiconductor and positioned between the active layer and at least one of the source electrode or the drain electrode, the resistive layer having an electric conductivity that is lower than the electric conductivity of the active layer, the electric conductivity of the active layer being from 10−4 Scm−1 to less than 102 Scm−1, the ratio of the electric conductivity of the active layer to the electric conductivity of the resistive layer (electric conductivity of active layer/electric conductivity of resistive layer) being from 101 to 1010, and at least one of the source electrode or the drain electrode including a layer including Ti or a Ti alloy positioned at the side facing the resistive layer.
    • 本发明提供一种薄膜场效应晶体管,其在基板上包括栅电极,栅极绝缘膜,包括氧化物半导体的有源层,源电极,漏电极,包括氧化物半导体的电阻层,并且定位 在有源层与源电极或漏电极中的至少一个之间,电阻层的导电率低于有源层的导电率,有源层的导电率为10 -4 Scm〜 1至小于102Scm-1时,有源层的电导率与电阻层的电导率(有源层的电导率/电阻层的电导率)的比率为101〜1010,以及至少一个 源电极或漏电极包括位于面向电阻层的一侧的包含Ti或Ti合金的层。
    • 4. 发明申请
    • IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
    • 图像传感器及其制造方法
    • US20090072122A1
    • 2009-03-19
    • US12209000
    • 2008-09-11
    • Hiroshi TADAMasayuki HayashiMasaya Nakayama
    • Hiroshi TADAMasayuki HayashiMasaya Nakayama
    • H01L27/00
    • H01L27/14647
    • An image sensor 1 has a substrate 2 and primary light-receiving pixels 4 arrayed in the direction of the surface of the substrate, and the primary light-receiving pixels are formed by laminating plural secondary light-receiving pixels 10, 20 and 30 which sense lights in different wavelength ranges, respectively, via at least sealing insulation layers 18 and 28 between adjacent secondary light-receiving pixels in the thickness direction. Each secondary light-receiving pixel includes a photoelectric conversion portion 14, 24, or 34 for photoelectrically converting the lights and a signal output portion 12, 22 or 32 for outputting signals from a thin film transistor 40 according to charges generated by the photoelectric conversion portion, and the active layer 48 of the thin film transistor is formed from an oxide semiconductor or organic semiconductor.
    • 图像传感器1具有在基板的表面方向排列的基板2和一次受光像素4,并且通过层叠感测的多个次级受光像素10,20和30来形成一次受光像素 通过至少在相邻的次级光接收像素之间的厚度方向上的密封绝缘层18和28分别在不同波长范围内的光。 每个次级光接收像素包括用于光电转换光的光电转换部分14,24或34以及用于根据由光电转换部分产生的电荷从薄膜晶体管40输出信号的信号输出部分12,22或32 并且薄膜晶体管的有源层48由氧化物半导体或有机半导体形成。
    • 6. 发明申请
    • Organic electroluminescent display device and method for producing the same
    • 有机电致发光显示装置及其制造方法
    • US20080074041A1
    • 2008-03-27
    • US11892390
    • 2007-08-22
    • Masaya Nakayama
    • Masaya Nakayama
    • H01L51/54H01L51/56
    • H01L27/3246H01L27/3276
    • An organic electroluminescent display device includes a substrate, lower electrodes arranged in stripes on the substrate, an insulating layer arranged on the lower electrodes, upper transparent electrodes arranged in stripes in a direction intersecting with the lower electrodes, an organic electroluminescent layer arranged between the lower electrodes and the upper transparent electrodes, electrodes auxiliary to the upper electrodes arranged on the insulating layer and connected with the upper transparent electrodes, and insulating barrier walls arranged on the insulating layer or the electrodes auxiliary to the upper electrodes, the widths of which are broadened in the upper portions, wherein the upper electrodes are connected to the electrodes auxiliary to the upper electrodes at a position between the insulating layer and a region where the width of the insulating barrier wall is broadest, and are connected within a region corresponding to the broadest width of the insulating barrier wall; and a method for producing the device.
    • 一种有机电致发光显示装置,包括:基板,在基板上以条纹布置的下电极,布置在下电极上的绝缘层,沿与下电极相交的方向上排列成条状的上透明电极;布置在下电极之间的有机电致发光层 电极和上部透明电极,布置在绝缘层上并与上部透明电极连接的上部电极辅助的电极和布置在绝缘层上的绝缘壁或辅助于上部电极的电极,其宽度变宽 在上部,其中上部电极在绝缘层和绝缘阻挡壁的宽度最宽的区域之间的位置处连接到辅助于上部电极的电极,并且在与最宽的区域相对应的区域内连接 绝缘条的宽度 墙壁 以及该装置的制造方法。
    • 7. 发明申请
    • Organic EL element and organic EL display
    • 有机EL元件和有机EL显示屏
    • US20070154735A1
    • 2007-07-05
    • US11386675
    • 2006-03-23
    • Masaya Nakayama
    • Masaya Nakayama
    • B32B19/00
    • H01L51/0054H01L27/3211H01L51/0072H01L51/5012H01L51/5088H01L51/5096
    • The organic EL element of the invention includes an organic thin layer which includes at least a light-emitting layer, between a positive electrode and a negative electrode, wherein a layer in the organic thin layer includes a 1,3,6,8-tetraphenylpyrene compound expressed by the following structural formula (1) and a triphenylbenzene derivative expressed by the following structural formula (2). Preferably, the triphenylbenzene derivative is 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (TCPB). In the structural formula (1), R1 to R4 represent one of a hydrogen atom, alkyl group, cycloalkyl group, and aryl group. In the structural formula (2), R5 represents a carbazole skeleton expressed by the following structural formula (3). In the structural formula (3), R6 and R7 represent a hydrogen atom, or a substituent group.
    • 本发明的有机EL元件包括在正极和负极之间至少包含发光层的有机薄膜,其中有机薄层中的层包含1,3,6,8-四苯基芘 由以下结构式(1)表示的化合物和由以下结构式(2)表示的三苯基苯衍生物。 优选地,三苯基苯衍生物是1,3,5-三[4-(N-咔唑基)苯基]苯(TCPB)。 在结构式(1)中,R 1至R 4代表氢原子,烷基,环烷基和芳基中的一个。 在结构式(2)中,R 5表示由以下结构式(3)表示的咔唑骨架。 在结构式(3)中,R 6和R 7表示氢原子或取代基。
    • 10. 发明授权
    • Organic EL device and its manufacture method
    • 有机EL器件及其制造方法
    • US08011987B2
    • 2011-09-06
    • US11526709
    • 2006-09-26
    • Masaya Nakayama
    • Masaya Nakayama
    • H01J9/26
    • H01L27/3246H01L27/12H01L27/3272H01L29/7866H01L51/5206
    • A TFT is formed on a substrate. TFT has first and second regions as a source and a drain, a channel region between the first and second regions, and a gate electrode. An interlayer insulating film is formed on the substrate, covering the thin film transistor. A pixel electrode disposed on the interlayer insulating film is electrically connected to the first region of TFT via a via hole formed in the interlayer insulating film. A cover film covers the edge of the pixel electrode, exposes the inner area of the pixel electrode, and covers the surface of the interlayer insulating film in the area superposed upon the channel region of the thin film transistor to shield an ultraviolet ray. An organic light emission layer and an upper electrode are disposed on and above the pixel electrode.
    • 在基板上形成TFT。 TFT具有第一和第二区域作为源极和漏极,在第一和第二区域之间的沟道区域和栅电极。 在基板上形成层间绝缘膜,覆盖薄膜晶体管。 设置在层间绝缘膜上的像素电极经由形成在层间绝缘膜中的通孔与TFT的第一区域电连接。 覆盖膜覆盖像素电极的边缘,暴露像素电极的内部区域,并且覆盖叠层在薄膜晶体管的沟道区域上的区域中的层间绝缘膜的表面以屏蔽紫外线。 有机发光层和上电极设置在像素电极上和上方。