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1. 发明授权

US08692309B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08692309B2
公开(公告)日：2014-04-08
申请号：US13559859
申请日：2012-07-27
申请人： Masayuki Terai
发明人： Masayuki Terai
IPC分类号： H01L29/788
CPC分类号： H01L21/28282 , H01L29/42344 , H01L29/792
摘要： In the trap type memory chip the withstanding voltage is raised up, and then the electric current for reading out is increased. There are formed on the p-type semiconductor substrate 1 a first gate lamination structure which comprises a first insulating film 11 including a trap layer, and a first conductive body 9, and a second gate lamination structure which comprises a second insulating film 12 free of a trap layer and including an insulating film layer 13 doped with metal for controlling the work function at least on the upper layer, and a second conductive body 10. A source drain region 2 and a source drain region 3 are formed such that the first gate lamination structure and the second gate lamination structure are interleaved therebetween.The effective work function of the second gate lamination structure is higher than that of the first gate lamination structure.
摘要翻译：在陷阱型存储芯片中，耐压升高，然后读出电流增加。在p型半导体衬底1上形成第一栅极层压结构，其包括具有陷阱层的第一绝缘膜11和第一导电体9以及第二栅极层叠结构，该第二栅极叠层结构包括第二绝缘膜12，陷阱层，并且包括掺杂有用于至少在上层上控制功函数的金属的绝缘膜层13和第二导电体10.源漏极区域2和源极漏极区域3形成为使得第一栅极层压结构和第二栅极层压结构之间交错。第二栅极层叠结构的有效功函数高于第一栅极层叠结构的功函数。

2. 发明授权

US08148757B2 Semiconductor device, and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08148757B2
公开(公告)日：2012-04-03
申请号：US12447113
申请日：2007-10-23
申请人： Masayuki Terai , Shinji Fujieda , Akio Toda
发明人： Masayuki Terai , Shinji Fujieda , Akio Toda
IPC分类号： H01L29/04 , H01L29/92
CPC分类号： H01L21/28282 , H01L27/11565 , H01L27/11568 , H01L29/42344 , H01L29/42348 , H01L29/42352 , H01L29/66833 , H01L29/7923 , H01L29/7926
摘要： A channel is formed at a recessed portion or a projecting portion of a substrate, and a gate insulating film is formed so as to have first to third insulating regions along the channel. Each of the gate insulating films of the first and third insulating regions has a first gate insulating film containing no electric charge trap formed on a plane different from a principal surface of the substrate, an electric charge accumulating film containing an electric charge trap, and a second gate insulating film containing no electric charge trap. The gate insulating film of the second insulating region at the middle is formed on a plane parallel to the principal surface of the substrate and is composed of only a third gate insulating film containing no electric charge trap.
摘要翻译：在基板的凹部或突出部形成沟道，并且形成栅极绝缘膜，以沿着沟道具有第一至第三绝缘区域。第一绝缘区域和第三绝缘区域的每个栅极绝缘膜具有不包含形成在不同于基板的主面的平面上的电荷阱的第一栅极绝缘膜，含有电荷阱的电荷积累膜，以及不含电荷陷阱的第二栅绝缘膜。中间的第二绝缘区域的栅极绝缘膜形成在与基板的主表面平行的平面上，并且仅由不含电荷陷阱的第三栅极绝缘膜构成。

3. 发明授权

US07821823B2 Semiconductor memory device, method of driving the same and method of manufacturing the same 有权
标题翻译：半导体存储器件，其驱动方法及其制造方法
公开(公告)号：US07821823B2
公开(公告)日：2010-10-26
申请号：US12095866
申请日：2006-12-01
申请人： Hiroshi Sunamura , Kouji Masuzaki , Masayuki Terai
发明人： Hiroshi Sunamura , Kouji Masuzaki , Masayuki Terai
IPC分类号： G11C16/04
CPC分类号： H01L21/28282 , G11C16/0466 , H01L29/4234 , H01L29/42344 , H01L29/792
摘要： Disclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the semiconductor substrate via the gate insulating film. The gate insulating film has a nitrogen-containing silicon oxide film inside, and a silicon oxide film is so arranged on both sides of the nitrogen-containing silicon oxide film as to sandwich the nitrogen-containing silicon oxide film. In addition, the nitrogen composition in the nitrogen-containing silicon oxide film is increased from the semiconductor substrate side to the first gate electrode side.
摘要翻译：公开了一种半导体存储装置，包括半导体衬底，形成在半导体衬底中的第一和第二杂质扩散层，形成在半导体衬底上的栅极绝缘膜，以及通过栅极绝缘膜形成在半导体衬底上的第一栅电极。栅极绝缘膜在内部具有含氮氧化硅膜，并且在含氮氧化硅膜的两侧配置氧化硅膜以夹持含氮氧化硅膜。此外，含氮氧化硅膜中的氮组成从半导体衬底侧增加到第一栅电极侧。

4. 发明授权

US09514807B2 Variable resistance memory device 有权
标题翻译：可变电阻存储器件
公开(公告)号：US09514807B2
公开(公告)日：2016-12-06
申请号：US14955789
申请日：2015-12-01
申请人： YounSeon Kang , Jungdal Choi , Masayuki Terai , Youngbae Kim , Jung Moo Lee , Seungjae Jung
发明人： YounSeon Kang , Jungdal Choi , Masayuki Terai , Youngbae Kim , Jung Moo Lee , Seungjae Jung
IPC分类号： G11C11/34 , G11C13/00 , G11C11/16 , G11C8/00 , G11C7/00
CPC分类号： G11C13/0004 , G11C7/00 , G11C8/00 , G11C11/16 , G11C11/1659 , G11C2213/71 , G11C2213/72 , H01L27/224 , H01L27/2409 , H01L27/2481
摘要： A variable resistance memory device includes upper interconnections on a substrate, first and second word lines provided between the substrate and the upper interconnections and vertically spaced apart from each other, a first bit line disposed between the first and second word lines and intersecting the first and second word lines, memory cells provided in an intersecting region of the first word line and the first bit line and an intersecting region of the second word line and the first bit line, a first word line contact directly connecting the first word line to a corresponding one of the upper interconnections, and a second word line contact directly connecting the second word line to a corresponding one of the upper interconnections.
摘要翻译：可变电阻存储器件包括衬底上的上部互连，设置在衬底和上部互连之间并且彼此垂直间隔开的第一和第二字线，设置在第一和第二字线之间并与第一和第二字线相交的第一位线第二字线，设置在第一字线和第一位线的交叉区域中的存储单元以及第二字线和第一位线的相交区域，将第一字线直接连接到相应的第一字线上部互连中的一个，以及将第二字线直接连接到上部互连中的相应一个的第二字线接触。

5. 发明授权

US08787067B2 Semiconductor device and method of controlling semiconductor device 有权
标题翻译：半导体器件及其控制方法
公开(公告)号：US08787067B2
公开(公告)日：2014-07-22
申请号：US13359449
申请日：2012-01-26
申请人： Motofumi Saitoh , Masayuki Terai
发明人： Motofumi Saitoh , Masayuki Terai
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0083 , G11C2013/009 , G11C2213/15 , G11C2213/54 , G11C2213/56 , G11C2213/74 , G11C2213/79 , G11C2213/82 , H01L27/101 , H01L27/2436 , H01L45/04 , H01L45/145
摘要： Provided is a semiconductor device including: a memory cell having a variable resistance device; and a control unit that controls a voltage applied to the memory cell, wherein the variable resistance device includes a lower electrode contains a first metal material, an upper electrode containing a second metal material, and an insulating film containing oxygen, the first metal material has a normalized oxide formation energy higher than that of the second metal material, and the control unit applies a positive voltage to the upper electrode at the time of an operation of increasing a resistance value of the insulating film and an operation of decreasing the resistance value thereof, and applies a positive voltage to the lower electrode at the time of an operation of reading out the resistance value of the insulating film.
摘要翻译：提供一种半导体器件，包括：具有可变电阻器件的存储单元; 以及控制单元，其控制施加到所述存储单元的电压，其中所述可变电阻装置包括下电极，所述下电极包含第一金属材料，包含第二金属材料的上电极和含氧的绝缘膜，所述第一金属材料具有归一化的氧化物形成能量高于第二金属材料，并且控制单元在增加绝缘膜的电阻值的操作时向上部电极施加正电压，并且降低其电阻值的操作并且在读出绝缘膜的电阻值的操作时向下电极施加正电压。

6. 发明授权

US08300448B2 Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device 失效
标题翻译：半导体存储装置，存储单元阵列以及半导体存储装置的制造方法和驱动方法
公开(公告)号：US08300448B2
公开(公告)日：2012-10-30
申请号：US12922783
申请日：2009-03-24
申请人： Masayuki Terai
发明人： Masayuki Terai
IPC分类号： G11C27/00
CPC分类号： H01L27/101 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1633 , H01L45/1675
摘要： A semiconductor storage device is provided for solving the problem of the inability to simultaneously realize high reliability and decreased cell area. A selection electrode (106) is formed to sandwich an insulating film (105) with a p-type semiconductor region (102). A first n-type semiconductor region (103) and a second n-type semiconductor region (104) are formed in the p-type semiconductor region (102) at two sides of the selection electrode (106). A first resistance-changing layer (107) is connected to the first n-type semiconductor region (103), and a second resistance-changing layer (109) is connected to the second n-type semiconductor region (104). In addition, a first wiring layer (108) is connected to the second resistance-changing layer (109), and a second wiring layer (110) is connected to the second resistance-changing layer (109).
摘要翻译：提供半导体存储装置，用于解决不能同时实现高可靠性和减小单元面积的问题。选择电极（106）被形成为用p型半导体区域（102）夹住绝缘膜（105）。在选择电极（106）的两侧的p型半导体区域（102）中形成第一n型半导体区域（103）和第二n型半导体区域（104）。第一电阻变化层（107）连接到第一n型半导体区域（103），第二电阻变化层（109）连接到第二n型半导体区域（104）。此外，第一布线层（108）连接到第二电阻变化层（109），第二布线层（110）连接到第二电阻变化层（109）。

7. 发明申请

US20090201739A1 METHOD FOR DRIVING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于驱动半导体器件的方法和半导体器件
公开(公告)号：US20090201739A1
公开(公告)日：2009-08-13
申请号：US12304322
申请日：2007-04-24
申请人： Masayuki Terai
发明人： Masayuki Terai
IPC分类号： G11C16/06 , G11C11/34 , H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , G11C16/10 , H01L27/115 , H01L29/42344 , H01L29/42348 , H01L29/66833 , H01L29/7923
摘要： In a case of writing to a trap type non-volatile memory cell that includes: a laminated insulating film, containing a charge accumulation layer, that is formed on a semiconductor substrate where source, drain and well regions are formed; and a first gate electrode formed on the laminated insulating film, charge injections that are carried on a single memory node multiple times under two or more different writing conditions, the writing condition is a combination of a well voltage applied to the well, a drain voltage applied to the drain and a gate voltage is applied to the first gate. Thereby, it is possible to form a trapezoid-shaped electron distribution in the charge accumulation layer, and thus prevent the charge retention characteristic from deteriorating.
摘要翻译：在写入陷阱型非易失性存储单元的情况下，包括：形成在形成有源极，漏极和阱区的半导体衬底上的电荷累积层的层叠绝缘膜; 以及形成在层叠绝缘膜上的第一栅极电极，在两个以上不同的写入条件下多次承载在单个存储器节点上的电荷注入，写入条件是施加到阱的阱电压，漏极电压施加到漏极，并且栅极电压被施加到第一栅极。因此，可以在电荷累积层中形成梯形电子分布，从而防止电荷保持特性劣化。

8. 发明申请

US20050253181A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050253181A1
公开(公告)日：2005-11-17
申请号：US11129440
申请日：2005-05-16
申请人： Naohiko Kimizuka , Kiyotaka Imai , Yuri Masuoka , Toshiyuki Iwamoto , Motofumi Saitoh , Hirohito Watanabe , Masayuki Terai
发明人： Naohiko Kimizuka , Kiyotaka Imai , Yuri Masuoka , Toshiyuki Iwamoto , Motofumi Saitoh , Hirohito Watanabe , Masayuki Terai
IPC分类号： H01L27/092 , H01L21/8238 , H01L29/78 , H01L31/119
CPC分类号： H01L29/517 , H01L21/823857 , H01L29/4916 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a first high dielectric constant film 111 and a polycrystalline silicon film 114 formed on the silicon substrate 102, and a P-type MOSFET 120 including a second high dielectric constant film 112 and a polycrystalline silicon film 114 juxtaposed to N-type MOSFET 118 on the silicon substrate 102. The second high dielectric constant film 112 is formed to have the film thickness thinner than the film thickness of the first high dielectric constant film 111. The first high dielectric constant film 111 and the second high dielectric constant film 112 contains one or more element(s) selected from a group consisting of Hf and Zr.
摘要翻译：半导体器件100包括硅衬底102，包括形成在硅衬底102上的第一高介电常数膜111和多晶硅膜114的N型MOSFET 118和包括第二高介电常数的P型MOSFET 120 膜112和与硅衬底102上的N型MOSFET 118并列的多晶硅膜114.第二高介电常数膜112形成为具有比第一高介电常数膜111的膜厚薄的膜厚度。第一高介电常数膜111和第二高介电常数膜112包含从由Hf和Zr组成的组中选择的一种或多种元素。

9. 发明授权

US08902630B2 Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory device 有权
公开(公告)号：US08902630B2
公开(公告)日：2014-12-02
申请号：US13553764
申请日：2012-07-19
申请人： Masaharu Matsudaira , Masayuki Terai
发明人： Masaharu Matsudaira , Masayuki Terai
IPC分类号： G11C11/00 , H01L27/108 , H01L45/00 , H01L27/24 , H01L49/02 , H01L27/105
摘要： In a case where a DRAM and a ReRAM are mounted together, a manufacturing cost thereof is reduced while maintaining performance of a capacitance element and a variable resistance element. A semiconductor memory device includes a variable resistance element and a capacitance element. The variable resistance element has a cylinder type MIM structure with a first depth, and is designed for a variable resistance type memory. The capacitance element has a cylinder type MIM structure with a second depth deeper than the first depth, and is designed for a DRAM.

10. 发明申请

US20120267598A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120267598A1
公开(公告)日：2012-10-25
申请号：US13499956
申请日：2010-10-04
申请人： Yukihiro Sakotsubo , Masayuki Terai , Munehiro Tada , Yuko Yabe , Yukishige Saito
发明人： Yukihiro Sakotsubo , Masayuki Terai , Munehiro Tada , Yuko Yabe , Yukishige Saito
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L21/02186 , H01L21/02183 , H01L21/022 , H01L21/02244 , H01L21/02266 , H01L27/101 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1608
摘要： A semiconductor device includes at least first and second electrodes, and a layer including a transition metal oxide layer sandwiched between the first and second electrodes. The transition metal oxide layer includes first and second transition metal oxide layers formed of different first and second transition metals, respectively. The first transition metal oxide layer is provided on the first electrode side, the second transition metal oxide layer is provided on the second electrode side, the first transition metal oxide layer and the second transition metal oxide layer are in contact with each other, the first transition metal oxide layer has an oxygen concentration gradient from the interface between the first transition metal oxide layer and the second transition metal oxide layer toward the first electrode side, and the oxygen concentration at the interface is greater than the oxygen concentration on the first electrode side.
摘要翻译：半导体器件至少包括第一和第二电极，以及包括夹在第一和第二电极之间的过渡金属氧化物层的层。过渡金属氧化物层分别包括由不同的第一和第二过渡金属形成的第一和第二过渡金属氧化物层。第一过渡金属氧化物层设置在第一电极侧，第二过渡金属氧化物层设置在第二电极侧，第一过渡金属氧化物层和第二过渡金属氧化物层彼此接触，第一过渡金属氧化物层过渡金属氧化物层具有从第一过渡金属氧化物层和第二过渡金属氧化物层之间的界面朝向第一电极侧的氧浓度梯度，并且界面处的氧浓度大于第一电极侧的氧浓度。

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