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1. 发明申请

US20220202585A1 GUIDER FOR SPINAL OPERATION AND CAGE THEREFOR 有权
公开(公告)号：US20220202585A1
公开(公告)日：2022-06-30
申请号：US17135663
申请日：2020-12-28
申请人： Min Ho JUNG , ENDOVISION CO., LTD.
发明人： Min Ho JUNG , Sae Won EUM
IPC分类号： A61F2/44 , A61F2/46
摘要： Proposed are a guider for a spinal operation and a cage therefor. The guider includes a sliding portion configured to guide a cage for a spinal operation and a holder to a surgical site, a head of the sliding portion being inserted into a human body region where a surgical incision is made for the spinal operation, and the cage for a spinal operation being combined with the holder; a support portion combined with one side of the sliding portion and thus supporting the sliding portion; and a handle combined with the support portion.

2. 发明申请

US20190142407A1 METHOD OF UNILATERAL BIPORTAL ENDOSCOPY AND DIAMOND SHAVER USED IN SAME 审中-公开
公开(公告)号：US20190142407A1
公开(公告)日：2019-05-16
申请号：US15879808
申请日：2018-01-25
申请人： Min Ho Jung , Sang-Kyu Son , ENDOVISION CO., LTD.
发明人： Min Ho Jung , Sang-Kyu Son
IPC分类号： A61B17/02 , A61F2/46 , A61B18/14 , A61B1/045 , A61B1/06 , A61B17/16 , A61B17/00
摘要： The present invention relates generally to a method of unilateral biportal endoscopy and diamond shaver used in the same. The method includes: securing pathways for a working portal and an endoscopic portal that extend toward a surgical site in the body of a patient and are distanced from each other; inserting a surgical instrument required for surgery into the secured working portal; inserting an endoscope into the endoscopic portal; performing surgery using the surgical instrument inserted into the working portal while monitoring the surgical site through the endoscope; removing the surgical instrument and the endoscope after the performing the surgery; and suturing of suturing entrances of the working portal and the endoscopic portal.

3. 发明申请

US20120051495A1 APPARATUS FOR GENERATING CONTROL DATA 审中-公开
标题翻译：用于生成控制数据的装置
公开(公告)号：US20120051495A1
公开(公告)日：2012-03-01
申请号：US13110638
申请日：2011-05-18
申请人： Jong-Tae HWANG , Min-Ho JUNG , Jun-Hong LEE , Seong-Joon PARK
发明人： Jong-Tae HWANG , Min-Ho JUNG , Jun-Hong LEE , Seong-Joon PARK
IPC分类号： H03K23/00
CPC分类号： H03K5/131 , H03K21/38
摘要： An apparatus configured to generate control data. The apparatus includes a counter unit configured to receive an input signal having a first state and a second state and counts the first state in the input signal, a delay unit configured to delay the count value for a predetermined time, and a data output unit configured to receive the delayed count value from the counter unit and then generate the control data based on the delayed count value.
摘要翻译：一种被配置为产生控制数据的装置。该装置包括：计数器单元，被配置为接收具有第一状态和第二状态的输入信号，并对输入信号中的第一状态进行计数;延迟单元，被配置为将计数值延迟预定时间;以及数据输出单元配置从计数器单元接收延迟的计数值，然后基于延迟的计数值生成控制数据。

4. 发明授权

US07746621B2 Bar type ionizer 有权
标题翻译：酒吧型离子发生器
公开(公告)号：US07746621B2
公开(公告)日：2010-06-29
申请号：US11918827
申请日：2006-02-09
申请人： Yong-Chul Jung , Byung-Soo Lee , Min-Ho Jung , Chung-Han Shim
发明人： Yong-Chul Jung , Byung-Soo Lee , Min-Ho Jung , Chung-Han Shim
IPC分类号： H05F3/00
CPC分类号： H01T23/00
摘要： A bar type ionizer has a discharging electrode, a ground electrode, a high voltage unit, and a controller unit and uses the technique of eliminating static electricity by corona discharging. The ionizer also has a FND unit mounted on the bar which lets the user see the bar information including address of the bar, frequency, duty rate, alarm, run/stop state easily, plus buttons that let the user control the bar information easily, an air supply device installed around the needles in the air injecting socket which sends air, and a second air supply device installed around the needles having round sections and sending air to the end of the needles to eliminate the dust attached on the end of the needles. The ionizer has a streamlined section so that inside air flows smoothly. The second air supply device is elliptic with the minor axis smaller than the radius of the needle. The needle is positioned at the center of this elliptic groove and fixed by it.
摘要翻译：棒式离子发生器具有放电电极，接地电极，高压单元和控制器单元，并且采用通过电晕放电消除静电的技术。离子发生器还具有安装在棒上的FND单元，使用户可以轻松地查看包括条的地址，频率，占空比，报警，运行/停止状态的条形信息，以及允许用户轻松控制条形信息的按钮，安装在空气喷射插座中的针周围的空气供应装置，以及安装在具有圆形部分的针周围的第二供气装置，并且将空气送到针的末端以消除附着在针的端部上的灰尘。电离器具有流线型部分，使得内部空气流畅地流动。第二供气装置是椭圆形的，短轴小于针的半径。针位于该椭圆槽的中心并由其固定。

5. 发明授权

US07150961B2 Additive for photoresist composition for resist flow process 失效
公开(公告)号：US07150961B2
公开(公告)日：2006-12-19
申请号：US10789055
申请日：2004-02-27
申请人： Min Ho Jung , Sung Eun Hong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Min Ho Jung , Sung Eun Hong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/40
CPC分类号： G03F7/0395 , C07J9/00 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10T428/24802
摘要： The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.

6. 发明授权

US06956091B2 Organic anti-reflective polymer and preparation thereof 失效
标题翻译：有机抗反射聚合物及其制备方法
公开(公告)号：US06956091B2
公开(公告)日：2005-10-18
申请号：US10438531
申请日：2003-05-14
申请人： Sung-eun Hong , Min-ho Jung , Ki-ho Baik
发明人： Sung-eun Hong , Min-ho Jung , Ki-ho Baik
IPC分类号： C07C317/22 , C07C303/28 , C07C309/73 , C08F2/06 , C08F4/04 , C08F4/34 , C08F20/38 , C08F20/58 , C08F220/38 , C09D5/00 , C09D133/14 , C09D163/00 , C08F124/00
CPC分类号： C08F20/58 , C07C303/28 , C07C309/73
摘要： The present invention relates to organic anti-reflective coating polymers suitable for use in a semiconductor device during a photolithograhy process for forming ultrafine patterns using 193 nm ArF beam radiation, and preparation method therefor. Anti-reflective coating polymers of the present invention contain a monomer having a pendant phenyl group having high absorbency at the 193 nm wavelength. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming ultrafine patterns, the polymers eliminate the standing waves caused by changes in the thickness of the overlying photosensitive film, by the spectroscopic property of lower layers on wafer and by changes in CD due to diffractive and reflective light originating from the lower layers. Use of the anti-reflective coating of the present invention results in the stable formation of ultrafine patters suitable for 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices and a great improvement in the production yield.The present invention also relates to anti-reflective coating compositions containing these polymers and to the anti-reflective coatings formed from these compositions, as well as preparation methods therefor.
摘要翻译：本发明涉及一种适用于半光装置的有机抗反射涂层聚合物，其用于使用193nm ArF光束辐射形成超细纹图案的光刻方法及其制备方法。本发明的抗反射涂层聚合物含有在193nm波长处具有高吸收性的侧基苯基的单体。当本发明的聚合物在用于形成超细图案的光刻工艺中的抗反射涂层中使用时，聚合物消除由上覆感光膜的厚度变化引起的驻波，通过下层的分光特性晶片以及由于来自下层的衍射和反射光引起的CD变化。使用本发明的抗反射涂层可以稳定地形成适用于64M，256M，1G，4G和16G DRAM半导体器件的超微图案，并且可以大大提高生产率。本发明还涉及含有这些聚合物和由这些组合物形成的抗反射涂层的抗反射涂料组合物及其制备方法。

7. 发明授权

US06824951B2 Photoresist composition for resist flow process 失效
标题翻译：用于抗流动过程的光刻胶组合物
公开(公告)号：US06824951B2
公开(公告)日：2004-11-30
申请号：US09947625
申请日：2001-09-06
申请人： Geun Su Lee , Jin Soo Kim , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jin Soo Kim , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/40 , Y10S430/106 , Y10S430/111
摘要： A photoresist composition for a resist flow process and a method for forming a contact hole using the same. When a photoresist composition comprising a crosslinking agent of following Formula 1 or Formula 2, is used for a photoresist pattern formation process, it improves resist flow properties, L/S pattern resolution and contrast ratio. wherein R1, R2, R3 and R4 individually represent H or substituted or unsubstituted linear or branched (C1-C10) alkyl. wherein R5, R6 and R7 individually represent H, substituted or unsubstituted linear or branched (C1-C10) alkyl or substituted or unsubstituted linear or branched (C1-C10) alkoxy.
摘要翻译：用于抗蚀剂流动方法的光致抗蚀剂组合物和使用其形成接触孔的方法。当将包含下述通式1或式2的交联剂的光致抗蚀剂组合物用于光致抗蚀剂图形形成工艺时，其改善抗蚀剂流动性，L / S图案分辨率和对比度。其中R1，R2，R3和R4分别代表 H或取代或未取代的直链或支链（C1-C10）烷基，其中R5，R6和R7分别表示H，取代或未取代的直链或支链（C1-C10）烷基或取代或未取代的直链或支链（C1-C10）烷氧基。

8. 发明授权

US06811960B2 Partially crosslinked polymer for bilayer photoresist 失效
标题翻译：用于双层光致抗蚀剂的部分交联聚合物
公开(公告)号：US06811960B2
公开(公告)日：2004-11-02
申请号：US10436742
申请日：2003-05-12
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0758 , C07F7/1804 , C08F30/08 , C08F232/04 , G03F7/0045 , G03F7/039 , Y02P20/55 , Y10S430/106 , Y10S430/111 , Y10S430/115 , C08F222/06 , C08F232/08 , C08F2222/1013
摘要： The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.
摘要翻译：本发明提供光致抗蚀剂单体，由其衍生的光致抗蚀剂聚合物，用于制备这种光致抗蚀剂聚合物的方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光特别地，本发明的光致抗蚀剂单体包含式4的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

9. 发明授权

US06797451B2 Reflection-inhibiting resin used in process for forming photoresist pattern 失效
标题翻译：用于形成光致抗蚀剂图案的工艺中使用的反射抑制树脂
公开(公告)号：US06797451B2
公开(公告)日：2004-09-28
申请号：US10189056
申请日：2002-07-03
申请人： Sung Eun Hong , Min Ho Jung , Hyeong Soo Kim , Jae Chang Jung , Ki Ho Baik
发明人： Sung Eun Hong , Min Ho Jung , Hyeong Soo Kim , Jae Chang Jung , Ki Ho Baik
IPC分类号： G03C176
CPC分类号： C08F220/32 , G03F7/091 , Y10S430/111 , Y10S430/122
摘要： The present invention provides a resin of the formula: where R1, R2, R3, x and y are those defined herein. The present invention also provides methods for using the above described resin to inhibit reflection of light from the lower layer of a wafer substrate during a photoresist pattern formation process.
摘要翻译：本发明提供下式的树脂：其中R1，R2，R3，x和y是本文定义的那些。本发明还提供了在光致抗蚀剂图案形成工艺期间使用上述树脂抑制来自晶片衬底的下层的光的反射的方法。

10. 发明授权

US06589707B2 Partially crosslinked polymer for bilayer photoresist 失效
标题翻译：用于双层光致抗蚀剂的部分交联聚合物
公开(公告)号：US06589707B2
公开(公告)日：2003-07-08
申请号：US09788181
申请日：2001-02-15
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0758 , C07F7/1804 , C08F30/08 , C08F232/04 , G03F7/0045 , G03F7/039 , Y02P20/55 , Y10S430/106 , Y10S430/111 , Y10S430/115 , C08F222/06 , C08F232/08 , C08F2222/1013
摘要： The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.
摘要翻译：本发明提供光致抗蚀剂单体，由其衍生的光致抗蚀剂聚合物，用于制备这种光致抗蚀剂聚合物的方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光特别地，本发明的光致抗蚀剂单体包含式4的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

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