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1. 发明授权

US10140569B2 Metal contactless smart card and method for fabricating the same 有权
公开(公告)号：US10140569B2
公开(公告)日：2018-11-27
申请号：US15489318
申请日：2017-04-17
申请人： Soo Hyang Kang , Nam Joo Kim
发明人： Nam Joo Kim , Heui Chul Hwang
IPC分类号： G06K19/00 , G06K19/07 , G06K19/077
摘要： A metal contactless smart card includes a first metal layer having a first slit, a second layer, a radio-frequency integrated circuit chip module, and an inlay having an antenna. A nonconductive insert may be fitted in the slit. The first metal layer may include an inlay recess where the inlay may be received and a through-hole where the chip may be inserted. The second layer of the smart card may be made of metal and may also include a slit.

2. 发明申请

US20130126788A1 Electronic device using anisotropic conductive composition and film 有权
标题翻译：使用各向异性导电组合物和薄膜的电子装置
公开(公告)号：US20130126788A1
公开(公告)日：2013-05-23
申请号：US13680893
申请日：2012-11-19
申请人： Kyoung Soo PARK , Nam Joo KIM , Young Woo PARK , Joon Mo SEO , Kyung Il SUL , Dong Seon UH , Arum YU , Hyun Min CHOI , Jae Sun HAN
发明人： Kyoung Soo PARK , Nam Joo KIM , Young Woo PARK , Joon Mo SEO , Kyung Il SUL , Dong Seon UH , Arum YU , Hyun Min CHOI , Jae Sun HAN
IPC分类号： H01B1/12
CPC分类号： H01B1/22 , C09J9/02 , H01B1/12 , H01B1/122 , H01R4/04 , H05K3/323
摘要： An electronic device includes a connection material formed from an adhesive composition that includes: a polymer resin; a cationic polymerization catalyst represented by Formula 1; and an organic base, where, in Formula 1, R1 may be selected from the group of hydrogen, C1-C6 alkyl, C6-C14 aryl, —C(═O)R4, —C(═O)OR5, and —C(═O)NHR6 (in which R4, R5, and R6 may each independently be selected from C1-C6 alkyl and C6-C14 aryl), R2 may be C1-C6 alkyl, and R3 may be selected from the group of a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group, a C1-C6 alkyl-substituted benzyl group, and a naphthylmethyl group.
摘要翻译：电子装置包括由粘合剂组合物形成的连接材料，所述粘合剂组合物包括：聚合物树脂; 由式1表示的阳离子聚合催化剂; 有机碱，其中，在式1中，R 1可以选自氢，C 1 -C 6烷基，C 6 -C 14芳基，-C（= O）R 4，-C（= O）OR 5和-C （= O）NHR 6（其中R 4，R 5和R 6可各自独立地选自C 1 -C 6烷基和C 6 -C 14芳基），R 2可以是C 1 -C 6烷基，R 3可以选自二硝基苄基，三硝基苄基，苄基，C1-C6烷基取代的苄基和萘基甲基。

3. 发明申请

US20130092939A1 BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：双极晶体管及其制造方法
公开(公告)号：US20130092939A1
公开(公告)日：2013-04-18
申请号：US13543161
申请日：2012-07-06
申请人： Nam Joo KIM
发明人： Nam Joo KIM
IPC分类号： H01L29/737 , H01L21/331 , H01L29/73
CPC分类号： H01L29/66272 , H01L29/0821 , H01L29/732
摘要： Disclosed are example bipolar transistors capable of reducing the area of a collector, reducing the distance between a base and a collector, and/or reducing the number of ion implantation processes. A bipolar transistor may includes a trench formed by etching a portion of a semiconductor substrate. A first collector may be formed on the inner wall of the trench. A second collector may be formed inside the semiconductor substrate in the inner wall of the trench. A first isolation film may be formed on the sidewall of the first collector. An intrinsic base may be connected to the third collector. An extrinsic base may be formed on the intrinsic base and inside the first isolation film. A second isolation film may be formed on the inner wall of the extrinsic base. An emitter may be formed by burying a conductive material inside the second isolation film.
摘要翻译：公开了能够减小集电极的面积，减小基极和集电极之间的距离和/或减少离子注入过程的数量的示例双极晶体管。双极晶体管可以包括通过蚀刻半导体衬底的一部分而形成的沟槽。可以在沟槽的内壁上形成第一集电器。可以在沟槽的内壁中的半导体衬底的内部形成第二集电体。可以在第一收集器的侧壁上形成第一隔离膜。内部基座可以连接到第三收集器。可以在本征基底和第一隔离膜内部形成非本征碱。可以在外基的内壁上形成第二隔离膜。可以通过在第二隔离膜内部埋入导电材料来形成发射极。

4. 发明授权

US08012838B2 Method for fabricating lateral double diffused metal oxide semiconductor (LDMOS) transistor 有权
标题翻译：制造横向双扩散金属氧化物半导体（LDMOS）晶体管的方法
公开(公告)号：US08012838B2
公开(公告)日：2011-09-06
申请号：US12647513
申请日：2009-12-27
申请人： Nam-Joo Kim
发明人： Nam-Joo Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/7835 , H01L21/26506 , H01L21/26533 , H01L29/0653 , H01L29/42368 , H01L29/66659
摘要： Disclosed is a method for fabricating a lateral double diffused metal oxide semiconductor (LDMOS) transistor, which includes implanting impurity ions onto a semiconductor substrate to form a drift region and a body region, forming a photoresist pattern to expose a region where an insulating oxide film is to be formed on the semiconductor substrate, implanting first impurity ions through the photoresist pattern to form a first impurity region, where the insulating oxide film is to be formed, in the semiconductor substrate, forming an insulating oxide film and an outer insulating oxide film on the semiconductor substrate by an oxidation process, and forming a gate electrode on the semiconductor substrate.
摘要翻译：公开了一种用于制造横向双扩散金属氧化物半导体（LDMOS）晶体管的方法，其包括将杂质离子注入到半导体衬底上以形成漂移区和体区，形成光致抗蚀剂图案以暴露出绝缘氧化膜将形成在半导体衬底上，通过光致抗蚀剂图案注入第一杂质离子以形成半导体衬底中形成绝缘氧化膜的第一杂质区，形成绝缘氧化膜和外绝缘氧化膜通过氧化工艺在半导体衬底上，并在半导体衬底上形成栅电极。

5. 发明授权

US07875524B2 Method of fabricating an inductor for a semiconductor device 失效
标题翻译：制造用于半导体器件的电感器的方法
公开(公告)号：US07875524B2
公开(公告)日：2011-01-25
申请号：US11643909
申请日：2006-12-22
申请人： Nam Joo Kim
发明人： Nam Joo Kim
IPC分类号： H01L21/304
CPC分类号： H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The inductor for a semiconductor device includes at least one dielectric pattern selectively formed on a top of the interlayer dielectric, at least one first metal wire formed on a top of the interlayer dielectric, at least one second metal wire formed on a top of the dielectric pattern, and an upper protective film formed on the top of the interlayer dielectric to completely cover the first and second metal wires, wherein the first and second metal wires are alternately arranged at different vertical locations and are formed in a spiral configuration.
摘要翻译：用于半导体器件的电感器包括选择性地形成在层间电介质的顶部上的至少一个电介质图案，形成在层间电介质的顶部上的至少一个第一金属线，形成在电介质顶部上的至少一个第二金属线图案和形成在层间电介质的顶部上的上保护膜，以完全覆盖第一和第二金属线，其中第一和第二金属线交替地布置在不同的垂直位置处并形成为螺旋形状。

6. 发明申请

US20100314675A1 Power Semiconductor Device and Method for Manufacturing the Same 失效
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US20100314675A1
公开(公告)日：2010-12-16
申请号：US12553546
申请日：2009-09-03
申请人： Choul Joo KO , Nam Joo Kim
发明人： Choul Joo KO , Nam Joo Kim
IPC分类号： H01L27/06
CPC分类号： H01L27/0629 , H01L29/1083 , H01L29/404 , H01L29/42368 , H01L29/7831 , H01L29/7835
摘要： Disclosed are a power semiconductor device and a method for manufacturing the same. The power semiconductor device has a PIP capacitor and an LDMOS transistor, the LDMOS transistor having second and third gate electrodes separate from a first gate electrode, which may be formed in the process of forming the upper electrode of the PIP capacitor, so it is possible to realize an LDMOS having a higher breakdown voltage and lower Ron and Rsp without additional processing. A drain voltage, which may be different from a voltage applied to the first gate electrode, may be applied to the third gate electrode, so it is possible to realize an LDMOS having a high breakdown voltage and low Ron and Rsp.
摘要翻译：公开了功率半导体器件及其制造方法。功率半导体器件具有PIP电容器和LDMOS晶体管，LDMOS晶体管具有与形成PIP电容器的上电极的过程中形成的第二和第三栅电极分离的第一和第三栅电极，因此可能实现具有更高击穿电压的LDMOS和较低的Ron和Rsp，而无需额外的处理。可以将不同于施加到第一栅电极的电压的漏极电压施加到第三栅电极，因此可以实现具有高击穿电压和低Ron和Rsp的LDMOS。

7. 发明申请

US20090166698A1 CAPACITOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：电容器及其制造方法
公开(公告)号：US20090166698A1
公开(公告)日：2009-07-02
申请号：US12344490
申请日：2008-12-27
申请人： Nam-Joo Kim
发明人： Nam-Joo Kim
IPC分类号： H01L21/02 , H01L29/92
CPC分类号： H01L27/0805 , H01L28/40 , H01L29/94
摘要： A capacitor with a mixed structure of a Metal Oxide Semiconductor (MOS) capacitor and a Poly-silicon Insulator Poly-silicon (PIP) capacitor includes a substrate and a diffusion junction region formed over the substrate. A high concentration diffusion junction region may be formed in a portion of the diffusion junction region. An oxide layer may be formed over the substrate, the oxide layer having an opening that exposes a portion of the high concentration diffusion junction region. A first polysilicon plate may be formed over a portion of the oxide layer and spaced from the opening, and a nitride layer may be formed over a portion of the first polysilicon plate. A sidewall may be formed over a side of the first polysilicon layer, over a side of the nitride layer, and over a portion of the oxide layer between the side of the polysilicon layer and the opening. A second polysilicon plate may be formed over the nitride layer, over the sidewall, and over the high concentration diffusion junction region.
摘要翻译：具有金属氧化物半导体（MOS）电容器和多晶硅绝缘体多晶硅（PIP）电容器的混合结构的电容器包括衬底和形成在衬底上的扩散结区域。可以在扩散接合区域的一部分中形成高浓度扩散连接区域。可以在衬底上形成氧化物层，氧化物层具有暴露高浓度扩散结区的一部分的开口。可以在氧化物层的一部分上形成第一多晶硅板并与开口间隔开，并且可以在第一多晶硅板的一部分上形成氮化物层。侧壁可以形成在第一多晶硅层的一侧上，在氮化物层的一侧上，以及在多晶硅层的侧面和开口之间的氧化物层的一部分上方形成。第二多晶硅板可以形成在氮化物层上方，侧壁上方，以及高浓度扩散结区域上方。

8. 发明申请

US20070152299A1 Inductor for semiconductor device and method of fabricating the same 失效
标题翻译：用于半导体器件的电感器及其制造方法
公开(公告)号：US20070152299A1
公开(公告)日：2007-07-05
申请号：US11643909
申请日：2006-12-22
申请人： Nam Joo Kim
发明人： Nam Joo Kim
IPC分类号： H01L29/00
CPC分类号： H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The inductor for a semiconductor device includes at least one dielectric pattern selectively formed on a top of the interlayer dielectric, at least one first metal wire formed on a top of the interlayer dielectric, at least one second metal wire formed on a top of the dielectric pattern, and an upper protective film formed on the top of the interlayer dielectric to completely cover the first and second metal wires, wherein the first and second metal wires are alternately arranged at different vertical locations and are formed in a spiral configuration.
摘要翻译：用于半导体器件的电感器包括选择性地形成在层间电介质的顶部上的至少一个电介质图案，形成在层间电介质的顶部上的至少一个第一金属线，形成在电介质顶部上的至少一个第二金属线图案和形成在层间电介质的顶部上的上保护膜，以完全覆盖第一和第二金属线，其中第一和第二金属线交替地布置在不同的垂直位置处并形成为螺旋形状。

9. 发明申请

US20190034954A1 SYSTEM AND METHOD FOR INTEGRATED MANAGEMENT OF LOYALTY POINTS 审中-公开
公开(公告)号：US20190034954A1
公开(公告)日：2019-01-31
申请号：US15665333
申请日：2017-07-31
申请人： Soo Hyang Kang , Nam Joo Kim
发明人： Nam Joo KIM
IPC分类号： G06Q30/02 , G06K19/077
摘要： A computer-implemented integrated loyalty points management system and method includes a plurality of affiliate servers, an integrated loyalty points management server, and a loyalty pool. The affiliate servers may process purchases of loyalty points for issuing to customers. Loyalty points may be integrated loyalty points, which are issued by each of the affiliates for a purchase or purchases made by a customer. Any of the affiliate servers may process redemption of loyalty points by customers for goods, services, or money. The affiliate server may communicate with the integrated loyalty points management server and the loyalty pool to exchange redeemed loyalty points for cash.

10. 发明申请

US20180232617A1 METAL CONTACTLESS SMART CARD AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20180232617A1
公开(公告)日：2018-08-16
申请号：US15955495
申请日：2018-04-17
申请人： Soo Hyang Kang , Nam Joo Kim
发明人： Nam Joo Kim , Heui Chul Hwang
IPC分类号： G06K19/077
CPC分类号： G06K19/07722 , G06K19/07773
摘要： A metal contactless smart card includes a first metal layer having a first slit, a second layer, a radio-frequency integrated circuit chip module, and an inlay having an antenna. A nonconductive insert may be fitted in the slit. The first metal layer may include an inlay recess where the inlay may be received and a through-hole where the chip may be inserted. The second layer of the smart card may be made of metal and may also include a slit.

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