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    • 1. 发明授权
    • Air cooling equipment for heat treatment process for martensitic stainless steel pipe or tube
    • 用于马氏体不锈钢管或管的热处理过程的空气冷却设备
    • US09181610B2
    • 2015-11-10
    • US12934241
    • 2008-12-15
    • Nobuyuki MoriAkihiro Sakamoto
    • Nobuyuki MoriAkihiro Sakamoto
    • C21D9/08F28F7/00C21D1/00C22C38/00C22C38/18C22C38/54C21D1/18F27D9/00C22C38/02C22C38/04
    • C22C38/18C21D1/00C21D9/08C21D9/085C21D2211/008C22C38/02C22C38/04C22C38/54
    • An object of the present invention is to provide air cooling equipment for a heat treatment process for a martensitic stainless steel pipe, which is capable of shortening the time required for the heat treatment process by enhancing the cooling efficiency at the time when the inner surface of steel pipe is air cooled in the heat treatment ent process.Air cooling equipment 100 for a heat treatment process for a martensitic stainless steel pipe P in accordance with the present invention comprises: a conveying device 10 for intermittently conveying the steel pipe P in the direction substantially at right angles to the longitudinal direction of the steel pipe P; and an air cooling device 20 provided with a nozzle 21 for spraying air Bi toward the inner surface of the steel pipe P, the nozzle 21 being arranged along the longitudinal direction of the steel pipe P at a stop position of the steel pipe P intermittently conveyed by the conveying device 10 so as to face to an end of the steel pipe P.
    • 本发明的目的是提供一种用于马氏体不锈钢管的热处理工艺的空气冷却设备,其能够通过提高热处理工艺的内表面时的冷却效率来缩短热处理工艺所需的时间 钢管在热处理工艺中进行空气冷却。 用于根据本发明的马氏体不锈钢管P的热处理工艺的空气冷却设备100包括:输送装置10,用于沿钢管的纵向方向基本上直角的方向间歇地输送钢管P. P; 以及空气冷却装置20,其设置有用于向钢管P的内表面喷射空气Bi的喷嘴21,喷嘴21沿着钢管P的纵向方向布置在钢管P的停止位置,间歇地传送 通过输送装置10与钢管P的端部相对。
    • 7. 发明授权
    • Compensating voltage drop for display device
    • 补偿显示设备的电压降
    • US08416234B2
    • 2013-04-09
    • US12393435
    • 2009-02-26
    • Seiichi MizukoshiMakoto KohnoKouichi OnomuraNobuyuki Mori
    • Seiichi MizukoshiMakoto KohnoKouichi OnomuraNobuyuki Mori
    • G09G5/00
    • G09G3/3233G09G2320/0223G09G2320/0276G09G2320/0285G09G2320/043G09G2320/0673
    • To compensate for voltage drop on a power supply line. In a display device, pixel data is supplied to each of a plurality of pixels arranged in a matrix form and display is performed. Each pixel has a self-emissive element. A horizontal direction power supply line (horizontal direction PVDD) which supplies a power supply to each pixel is provided, and one end of the horizontal PVDD line is connected to a vertical power supply line (vertical PVDD line) that is connected to an external power supply terminal. Correction data corresponding to a voltage drop to the horizontal PVDD line due to a resistance in the vertical PVDD line is then obtained through a calculation based on pixel data, and the input pixel data is corrected using the correction data so as to reduce the influence of the voltage drop on the pixel current.
    • 补偿电源线上的电压降。 在显示装置中,将像素数据提供给以矩阵形式布置的多个像素中的每一个,并执行显示。 每个像素具有自发射元件。 设置向每个像素供给电源的水平方向供电线(水平方向PVDD),并且水平PVDD线的一端连接到与外部电源连接的垂直电源线(垂直PVDD线) 供应终端。 然后通过基于像素数据的计算,获得对应于由于垂直PVDD线中的电阻而导致的对水平PVDD线的电压降的校正数据,并且使用校正数据来校正输入像素数据,以便减小 像素电流上的电压降。
    • 8. 发明授权
    • Display device
    • 显示设备
    • US08294700B2
    • 2012-10-23
    • US13020544
    • 2011-02-03
    • Seiichi MizukoshiNobuyuki MoriMakoto Kohno
    • Seiichi MizukoshiNobuyuki MoriMakoto Kohno
    • G09G3/30
    • G09G3/3233G09G3/006G09G2300/0842G09G2300/0866G09G2310/0218G09G2320/0223G09G2320/0295G09G2320/043G09G2330/06
    • Noise on a current to be measured is removed. Horizontal power supply lines (PVDD) are arranged in a horizontal direction and supply a current to pixels in respective corresponding horizontal lines. A switch (8) connects a group of the horizontal power supply lines (PVDD) to a first power supply line (PVDDa) or a second power supply line (PVDDb) disposed outside a pixel region in a switchable manner. Only the horizontal power supply lines (PVDD) in a group to which a pixel to be measured belongs are supplied with power from the second power supply line (PVDDb) so as to measure a current of each pixel in the group, and a current flowing into a power source (PVDDa) connected to a group to which other pixels than the pixel to be measured belong is measured, to thereby calculate a pixel current based on a difference between the two measured currents.
    • 去除待测电流的噪声。 水平电源线(PVDD)沿水平方向布置并且向相应的相应水平线中的像素提供电流。 开关(8)将一组水平电源线(PVDD)连接到以可切换的方式设置在像素区域外的第一电源线(PVDDa)或第二电源线(PVDDb)。 从第二电源线(PVDDb)仅供给要测量的像素所属的组中的水平电源线(PVDD)被供给电力,以便测量该组中的每个像素的电流,并且流过电流 测量与要测量的像素所属的其他像素所属的组连接的电源(PVDDa),从而基于两个测量电流之间的差来计算像素电流。
    • 10. 发明申请
    • METHOD AND SYSTEM FOR PURIFYING SILICON
    • 用于净化硅的方法和系统
    • US20120097523A1
    • 2012-04-26
    • US13266631
    • 2010-04-27
    • Nobuyuki MoriHiroshi YanoToshiyuki ShiroishiTakashi UshidaNobuhiro ShimizuNoriyuki TakahashiToshihiro Mitsuzuka
    • Nobuyuki MoriHiroshi YanoToshiyuki ShiroishiTakashi UshidaNobuhiro ShimizuNoriyuki TakahashiToshihiro Mitsuzuka
    • C01B33/037B01J19/08
    • C01B33/037
    • [Objects] To improve productivity and reduce thermal energy consumption in manufacturing of high purity silicon as a raw material for metallurgical grade pure silicon.[Means to Solve]After conducting a first treatment of either removing boron by water-vapor added plasma arc heating or low-pressure oxygen plasma arc heating upon raw silicon contained in a hearth in a chamber to thereby putting the raw silicon into a high temperature molten state to thereby oxidizing and removing boron by evaporation, or removing phosphorus by electron beam irradiation to thereby putting the raw silicon into a high temperature molten state to thereby remove phosphorus by evaporation in an atmosphere suitable to the treatment; the atmosphere of the chamber is then changed to a vacuum atmosphere suitable to the remaining second treatment, while maintaining the silicon contained in the hearth in its molten state, and the second purification treatment is conducted; whereafter end(s) enriched in impurities is cut off by way of one-way coagulation method to obtain a high purity refined silicon ingot highly free from phosphorus, boron and other impurities.
    • [对象]提高生产率,降低冶金级纯硅原料的高纯度硅制造中的热能消耗。 [解决方法]在室内的原料硅中,通过水蒸汽添加等离子体电弧加热或低压氧等离子体电弧加热进行第一次处理之后,将原料硅置于高温 从而通过蒸发氧化和除去硼,或通过电子束照射除去磷,从而将原料硅置于高温熔融状态,从而通过在适于处理的气氛中蒸发除去磷; 然后将室的气氛变成适合于剩余的第二处理的真空气氛,同时将包含在炉床中的硅保持在其熔融状态,并且进行第二净化处理; 然后通过单向凝结法切断富集杂质的末端,得到高度无磷,硼等杂质的高纯度精制硅锭。