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    • 3. 发明申请
    • Rotation rate sensor and method for operating a rotation rate sensor
    • 旋转速率传感器和操作旋转速度传感器的方法
    • US20140373627A1
    • 2014-12-25
    • US14313330
    • 2014-06-24
    • Odd-Axel PRUETZ
    • Odd-Axel PRUETZ
    • G01C19/5705
    • G01C19/574G01C19/5712
    • A rotation rate sensor for detecting a rotation rate about a rotational axis parallel to a main extension plane of a substrate of the sensor includes: a first oscillating mass; and a second oscillating mass mechanically coupled to the first oscillating mass. The first oscillating mass is (i) deflectable along a first oscillations plane parallel to the main extension plane, (ii) extends in a planar manner parallel to the first oscillations plane in a rest position, and (iii) deflectable out of the first oscillations plane into a first deflection position. The second oscillating mass is (i) deflectable along a second oscillations plane parallel to the first oscillations plane, (ii) extends in a planar manner parallel to the second oscillations plane in a rest position, and (iii) deflectable out of the second oscillations plane into a second deflection position.
    • 用于检测围绕与所述传感器的基板的主延伸面平行的旋转轴线的旋转速度的旋转速率传感器包括:第一振荡块; 以及机械耦合到所述第一振荡块的第二振荡质量块。 第一振荡质量是(i)沿着平行于主延伸平面的第一振荡平面可偏转,(ii)在静止位置以平行于第一振荡平面的平面方式延伸,以及(iii)可偏离第一振荡 平面进入第一偏转位置。 第二振荡质量是(i)沿着平行于第一振荡平面的第二振荡平面偏转,(ii)在静止位置以平行于第二振荡平面的平面方式延伸,以及(iii)可偏离第二振荡 平面进入第二偏转位置。
    • 6. 发明申请
    • Gas sensor and method for the production thereof
    • 气体传感器及其制造方法
    • US20070062812A1
    • 2007-03-22
    • US10565991
    • 2004-07-23
    • Heribert WeberOdd-Axel PruetzChristian KrummelChristoph SchellingDetlef Gruen
    • Heribert WeberOdd-Axel PruetzChristian KrummelChristoph SchellingDetlef Gruen
    • G01N27/26
    • G01N27/128
    • The invention relates to a gas sensor comprising a membrane layer (3) formed on a semiconductor substrate (2), an evaluation structure (7) being arranged on said substrate in an evaluation area (8) and a heating structure (9) outside the evaluation area (8), in addition to a gas-sensitive layer (10) arranged above the evaluation structure (7) and the heating structure (9), wherein said gas-sensitive layer (10) can be heated by the heating structure (9) and the electrical resistance of the gas-sensitive layer (10) can be evaluated by the evaluation structure (7). The heating structure (9) is arranged on an adhesion-promoting oxide layer (6) on the top surface of the membrane layer (3) and is separated from the gas-sensitive layer by a cover oxide layer (11). In order to enable reliable functionality of the gas sensor, that in the evaluation area (8), an adhesion-promoting layer (13) insensitive to oxide etching is arranged between the membrane layer (3) and the evaluation structure (7) or the evaluation structure (7) in the evaluation area (8) corresponding to the heating structure (9) is separated from the gas-sensitive layer (10) by the cover oxide layer (11), wherein the cover oxide layer (11) has contact holes (12) which uncover a central area of the surface of the evaluation structure (7) in order to produce a direct contact between the evaluation structure (7) and the gas-sensitive layer (10).
    • 本发明涉及一种气体传感器,包括形成在半导体衬底(2)上的膜层(3),评估结构(7)布置在评估区域(8)和加热结构(9)的所述衬底上 评价区域(8),除了设置在评价结构(7)和加热结构(9)之上的气敏层(10)之外,其中所述气敏层(10)可以被加热结构( 9),气敏层(10)的电阻可以通过评价结构(7)进行评价。 加热结构(9)设置在膜层(3)的上表面上的粘附促进氧化物层(6)上,并通过覆盖氧化物层(11)与气敏层分离。 为了实现气体传感器的可靠功能,在评价区域(8)中,在膜层(3)和评价结构(7)之间设置对氧化物蚀刻不敏感的粘附促进层(13) 对应于加热结构(9)的评价区域(8)的评价结构(7)通过覆盖氧化物层(11)与气体敏感层(10)分离,其中,覆盖氧化物层(11)具有接触 孔(12),其露出评估结构(7)的表面的中心区域,以便产生评估结构(7)和气敏层(10)之间的直接接触。