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1. 发明申请

US20090096058A1 PINCHED POLY FUSE 有权
公开(公告)号：US20090096058A1
公开(公告)日：2009-04-16
申请号：US11869862
申请日：2007-10-10
申请人： Paul R. Fournier , Susan Stock
发明人： Paul R. Fournier , Susan Stock
IPC分类号： H01L29/00 , H01L21/02
CPC分类号： H01L23/5256 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.
摘要翻译：电熔丝具有与第一导电类型相反的第二导电类型的连续型多晶硅中的第一导电类型的区域。在本发明的一个实施例中，区域和多晶硅熔丝之间的PN结被反向偏置。

2. 发明授权

US07759767B2 Pinched poly fuse 有权
标题翻译：拼接聚熔丝
公开(公告)号：US07759767B2
公开(公告)日：2010-07-20
申请号：US12576290
申请日：2009-10-09
申请人： Paul R. Fournier , Susan Stock
发明人： Paul R. Fournier , Susan Stock
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.
摘要翻译：电熔丝具有与第一导电类型相反的第二导电类型的连续型多晶硅中的第一导电类型的区域。在本发明的一个实施例中，区域和多晶硅熔丝之间的PN结被反向偏置。

3. 发明授权

US07619295B2 Pinched poly fuse 有权
标题翻译：拼接聚熔丝
公开(公告)号：US07619295B2
公开(公告)日：2009-11-17
申请号：US11869862
申请日：2007-10-10
申请人： Paul R. Fournier , Susan Stock
发明人： Paul R. Fournier , Susan Stock
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.
摘要翻译：电熔丝具有与第一导电类型相反的第二导电类型的连续型多晶硅中的第一导电类型的区域。在本发明的一个实施例中，区域和多晶硅熔丝之间的PN结被反向偏置。

4. 发明申请

US20100025812A1 PINCHED POLY FUSE 有权
公开(公告)号：US20100025812A1
公开(公告)日：2010-02-04
申请号：US12576290
申请日：2009-10-09
申请人： Paul R. Fournier , Susan Stock
发明人： Paul R. Fournier , Susan Stock
IPC分类号： H01L23/525 , H01L21/28
CPC分类号： H01L23/5256 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse has a region of a first conductivity type in a continuous type polysilicon of a second conductivity type that is opposite the first conductivity type. In one embodiment of the invention the PN junction between the region and the poly fuse is reverse biased.
摘要翻译：电熔丝具有与第一导电类型相反的第二导电类型的连续型多晶硅中的第一导电类型的区域。在本发明的一个实施例中，区域和多晶硅熔丝之间的PN结被反向偏置。

5. 发明授权

US06258217B1 Rotating magnet array and sputter source 有权
标题翻译：旋转磁体阵列和溅射源
公开(公告)号：US06258217B1
公开(公告)日：2001-07-10
申请号：US09406853
申请日：1999-09-29
申请人： Edmond A. Richards , Paul R. Fournier , David Johnson , Abdul Lateef , David G. Lishan , Shinzo Onishi , Mark D. Kenney
发明人： Edmond A. Richards , Paul R. Fournier , David Johnson , Abdul Lateef , David G. Lishan , Shinzo Onishi , Mark D. Kenney
IPC分类号： C23C1435
CPC分类号： H01J37/3408 , C23C14/35 , H01J37/3455
摘要： A sputtering system and magnet array for depositing metal and metal-reactive gas coatings onto a substrate. The magnet array is designed for use in a rotating magnetron. The magnet array includes a plurality of magnets disposed on a plate. The plurality of magnets is arranged such that a closed-loop magnetic path is formed. The shape of the magnetic path is a double-lobe structure that includes first and second lobes that are symmetric to one another about an axis in the plane of the plate that intersects the center of rotation of the plate. The magnets are arranged in several rows. A first row of magnets has a double-lobe structure that corresponds to the first and second lobes of the magnetic path. Second and third rows of magnets are arranged in the shape of rings inside the first and second lobes of the magnetic path magnetic path. The lobe structure of the magnetic path can be circular or elliptical in shape. Using this design, a metal or metal-reactive gas coating can be deposited on the surface of the substrate at a high rate.
摘要翻译：用于将金属和金属反应性气体涂层沉积到衬底上的溅射系统和磁体阵列。磁体阵列设计用于旋转磁控管。磁体阵列包括设置在板上的多个磁体。多个磁体被布置成使得形成闭环磁路。磁路的形状是双瓣结构，其包括围绕板的平面中与轴的旋转中心相交的轴线彼此对称的第一和第二凸角。磁铁排成几行。第一排磁体具有对应于磁路的第一和第二凸角的双瓣结构。第二和第三排磁体被布置成在磁路磁路的第一和第二凸角内的环形。磁路的凸角结构可以是圆形或椭圆形。使用这种设计，金属或金属反应性气体涂层可以高速沉积在基板的表面上。

6. 发明授权

US4486287A Cross-field diode sputtering target assembly 失效
标题翻译：跨场二极管溅射靶组件
公开(公告)号：US4486287A
公开(公告)日：1984-12-04
申请号：US577016
申请日：1984-02-06
申请人： Paul R. Fournier
发明人： Paul R. Fournier
IPC分类号： C23C14/36 , C23C14/35 , H01J37/34 , H01L21/203 , C23C15/00
CPC分类号： H01J37/3452 , H01J37/3408
摘要： An improved cross-field diode sputtering target assembly adapted for sputtering a selected material having an ion target wherein a selected surface is formed of a selected material in a predetermined closed loop pattern having a central opening therein, and wherein the selected surface has spaced edges and is formed of a material adapted to be controllably eroded in a diode sputtering process, walls positioned contiguous or adjacent to each of the spaced edges of the selected surface wherein each of the walls extend substantially normal from and beyond each spaced edge of the selected surface of the ion target and a magnetic member having poles positioned in an opposed spaced relationship to each other and enclosing the walls and the ion target for providing a linear magnetic field (B) through the walls, over the selected surface and through the ion target and wherein the magnetic member has a linear magnetic field of sufficient strength for plasma entrapment between the walls and over the selected surface wherein the selected surface is adapted to have an electric field (E) applied thereacross at a direction substantially normal to the magnetic field (B) to develop a B.times.E field and to entrap secondary electrons at the selected surface to control the erosion pattern thereof is shown.A method for utilizing the improved cross-field diode sputtering target assembly is also shown.
摘要翻译：一种改进的交叉场二极管溅射靶组件，其适于溅射具有离子靶的选定材料，其中选定表面由选定材料形成，其中具有中心开口的预定闭环图案，并且其中所选择的表面具有间隔开的边缘，由适于在二极管溅射工艺中可控制地侵蚀的材料形成，壁邻接或邻近所选择的表面的每个间隔开的边缘定位，其中每个壁从所选择的表面的每个间隔边缘的每个间隔开的边缘基本上平行延伸，所述离子靶和磁性构件具有彼此相对间隔开并且包围所述壁和所述离子靶的磁极，用于通过所述壁在所选择的表面上并通过所述离子靶提供线性磁场（B），并且其中磁性构件具有足够的强度的线性磁场，用于等离子体在壁之间夹带所选择的表面，其中所选择的表面适于在基本上垂直于磁场（B）的方向上施加电场（E），以产生BxE场并且在选择的表面捕获二次电子以控制侵蚀模式示出。还示出了利用改进的交叉场二极管溅射靶组件的方法。

7. 发明授权

US4404077A Integrated sputtering apparatus and method 失效
标题翻译：一体化溅射装置及方法
公开(公告)号：US4404077A
公开(公告)日：1983-09-13
申请号：US355853
申请日：1982-03-08
申请人： Paul R. Fournier
发明人： Paul R. Fournier
IPC分类号： H01J37/34 , C23C15/00
CPC分类号： H01J37/32706 , H01J37/3233 , H01J37/3408
摘要： An integrated sputtering means having a housing including a first cavity and a second cavity spaced a predetermined distance from the first cavity and wherein the housing includes a predetermined path extending between the cavities, a mount for supporting an ion target formed of at least one selected material in the interior of the housing wherein the ion target is positioned therein with a selected surface of the ion target positioned contiguous the predetermined path and between said cavities forming a lower boundary for the predetermined path and wherein the mount or the ion target includes means for containing electrons adjacent the ion target selected surface, an electron emitter positioned in one of the cavities, an electron collector positioned in the other of the cavities, and magnetic elements positioned along the predetermined path and located in a predetermined spaced relationship from the ion target selected surface for producing substantially linear shaped lines of magnetic flux between the magnetic elements which define a B field wherein the direction of the B field of the magnetic elements is oriented in a predetermined direction relative to the cavities and to the predetermined path adjacent the selected surface to produce a controlled magnetic field of flux having at least one selected flux density adjacent the selected surface wherein the selected surface of said ion target, said electron containing means and said substantially linear lines of flux define a plasma containment envelope which entraps and contains a plasma adjacent the selected surface to obtain controlled uniform target erosion is shown.A method for utilizing the integrated sputtering means is also shown.
摘要翻译：一种集成的溅射装置，其具有壳体，该壳体包括与第一空腔间隔开预定距离的第一空腔和第二空腔，并且其中壳体包括在空腔之间延伸的预定路径，用于支撑由至少一个选定材料形成的离子靶在壳体的内部，其中离子靶位于其中，其中离子靶的选定表面定位成与预定路径相邻并且在所述空腔之间形成用于预定路径的下边界，并且其中安装件或离子靶包括用于容纳邻近离子靶选择表面的电子，位于一个空穴中的电子发射体，位于另一个空腔中的电子收集器，以及沿着预定路径定位并以离子目标选定表面预定间隔开的位置的磁性元件用于产生大致线形的磁铁线定义B磁场的磁性元件之间的c通量，其中磁性元件的B磁场的方向相对于空腔沿预定方向定向到与选定表面相邻的预定路径，以产生受控的磁通磁场，与所选择的表面相邻的至少一个选定的通量密度，其中所述离子靶的所选表面，所述电子含有装置和所述基本上线性的通量线限定了等离子体容纳外壳，其封闭并包含邻近所选表面的等离子体以获得受控的均匀靶显示出侵蚀。还示出了利用集成溅射装置的方法。

8. 发明授权

US4155825A Integrated sputtering apparatus and method 失效
标题翻译：一体化溅射装置及方法
公开(公告)号：US4155825A
公开(公告)日：1979-05-22
申请号：US792513
申请日：1977-05-02
申请人： Paul R. Fournier
发明人： Paul R. Fournier
IPC分类号： C23C14/35 , H01J37/34 , C23C15/00
CPC分类号： H01J37/32706 , C23C14/355 , H01J37/3233 , H01J37/3408
摘要： An integrated sputtering means for use in a triode sputtering apparatus having an ion target of a selected material positioned interior to a thin passageway in a housing and magnetic means which establishes a controlled magnetic field of flux having shaped magnetic lines of force which define a magnetic flux pattern having at least one selected flux density in at least one field direction contiguous the first surface of the ion target to encapsulate both electrons and plasma increasing efficiency of sputtering of selected material from the ion target and including an electron emitter and an electron collector to produce, in an evacuated enclosure, a controlled flow of electrons which collide with an ionizable gas within an evacuated enclosure forming a gas plasma which is attracted toward and impinges into an ion target surface formed of a selected material, the collision of which ejects from the ion target surface atoms of selected ion target material which adhere to a surface of the substrate forming a thin film of atoms of deposited ion target material on the substrate is shown.A method and apparatus for depositing a thin film of material on a substrate by triode sputtering from an ion target of selected material using an integrated sputtering apparatus is shown.
摘要翻译：一种用于三极管溅射装置的集成溅射装置，其具有位于壳体中的薄通道内部的选定材料的离子靶和磁性装置，该装置建立具有限定磁通量的成形磁力线的磁通的受控磁场在至少一个场方向上具有至少一个选定的通量密度的图案，其邻接离子靶的第一表面，以封装所选择的材料从离子靶溅射的电子和等离子体增加的效率，并且包括电子发射体和电子收集器以产生在真空的外壳中，受控的电子流与真空的外壳内的可电离气体相撞形成气体等离子体，该气体等离子体被吸引并入射到由所选择的材料形成的离子目标表面中，该离子目标表面从离子选择的离子靶材料的靶表面原子粘附在该表面上示出了在衬底上形成沉积的离子靶材料的原子薄膜的衬底。

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