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1. 发明授权

US09419166B2 Etching processes for solar cell fabrication 有权
标题翻译：太阳能电池制造的蚀刻工艺
公开(公告)号：US09419166B2
公开(公告)日：2016-08-16
申请号：US14975175
申请日：2015-12-18
申请人： Scott Harrington , Venkatasubramani Balu , Westerberg Staffan , Peter John Cousins
发明人： Scott Harrington , Venkatasubramani Balu , Westerberg Staffan , Peter John Cousins
IPC分类号： H01L21/00 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/035281 , H01L31/0747 , H01L31/075 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.
摘要翻译：制造太阳能电池的方法可以包括在硅衬底上形成第一掺杂剂区域和在第一掺杂剂区域上形成氧化物区域。在一个实施例中，氧化物区域可以保护第一掺杂剂区域免受第一蚀刻工艺的影响。在一个实施例中，可以在硅衬底上形成第二掺杂剂区域，其中可以形成掩模以保护第一掺杂剂区域的第一部分不受第一蚀刻工艺的影响。在一个实施例中，可以执行第一蚀刻工艺以暴露硅衬底和/或硅区域的部分。可以执行第二蚀刻工艺以形成分离太阳能电池的第一和第二掺杂区域的沟槽区域。可以进行第三蚀刻工艺以从太阳能电池去除污染物并去除氧化物区域的任何剩余部分。

2. 发明授权

US08409902B1 Ablation of film stacks in solar cell fabrication processes 有权
标题翻译：在太阳能电池制造工艺中消除薄膜叠层
公开(公告)号：US08409902B1
公开(公告)日：2013-04-02
申请号：US13486095
申请日：2012-06-01
申请人： Gabriel Harley , Taeseok Kim , Peter John Cousins
发明人： Gabriel Harley , Taeseok Kim , Peter John Cousins
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , B23K26/0622 , B23K26/384 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L31/02167 , H01L31/0682 , Y02E10/547 , Y10S438/94
摘要： A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.
摘要翻译：使用激光烧蚀太阳能电池的电介质膜堆叠。电介质膜堆叠包括在激光源的工作波长中吸收的层。以脉冲重复频率激发激光脉冲的激光源被配置为烧蚀膜堆以暴露下层材料。激光源可以被配置为在单个脉冲重复中触发两个激光脉冲或单个时间不对称激光脉冲的脉冲，以在单个步骤中实现完全消融。

3. 发明申请

US20130048067A1 HIGH THROUGHPUT LASER ABLATION PROCESSES AND STRUCTURES FOR FORMING CONTACT HOLES IN SOLAR CELLS 有权
标题翻译：用于在太阳能电池中形成接触孔的高通量激光吸收过程和结构
公开(公告)号：US20130048067A1
公开(公告)日：2013-02-28
申请号：US13298136
申请日：2011-11-16
申请人： Taeseok KIM , Gabriel HARLEY , David D. SMITH , Peter John COUSINS
发明人： Taeseok KIM , Gabriel HARLEY , David D. SMITH , Peter John COUSINS
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Throughput of the solar cell ablation process is improved by incorporating linear base diffusion regions with narrow width, for example as compared to an overlying metal contact. Throughput of the solar cell ablation process may also be improved by having contact holes to base diffusion regions that are perpendicular to contact holes to emitter diffusion regions. To allow for continuous laser scanning, a laser blocking layer may be located over an interlayer dielectric to prevent contact hole formation on certain regions, such as regions where a metal contact of one polarity may electrically shunt to a diffusion region of opposite polarity. In a hybrid design, a solar cell may have both linear and dotted base diffusion regions. An electro-optical modulator may be employed to allow for continuous laser scanning in dotted base diffusion designs.
摘要翻译：通过激光烧蚀形成太阳能电池的接触孔，以适应各种太阳能电池设计。通过结合具有窄宽度的线性基极扩散区域，例如与覆盖的金属接触相比，改善了太阳能电池烧蚀过程的吞吐量。通过将与接触孔垂直的基底扩散区域的接触孔设置到发射极扩散区，也可以改善太阳能电池烧蚀过程的吞吐量。为了允许连续激光扫描，激光阻挡层可以位于层间电介质上方，以防止在某些区域（例如一个极性的金属接触可以电分流到相反极性的扩散区域的区域）上的接触孔形成。在混合设计中，太阳能电池可以具有线性和点状的基极扩散区域。可以使用电光调制器来允许在虚点扩散设计中的连续激光扫描。

4. 发明申请

US20110300665A1 Ablation Of Film Stacks In Solar Cell Fabrication Processes 有权
标题翻译：太阳能电池制造工艺中薄膜叠层的消融
公开(公告)号：US20110300665A1
公开(公告)日：2011-12-08
申请号：US12795526
申请日：2010-06-07
申请人： Gabriel HARLEY , Taeseok KIM , Peter John COUSINS
发明人： Gabriel HARLEY , Taeseok KIM , Peter John COUSINS
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , B23K26/0622 , B23K26/384 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L31/02167 , H01L31/0682 , Y02E10/547 , Y10S438/94
摘要： A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.
摘要翻译：使用激光烧蚀太阳能电池的电介质膜堆叠。电介质膜堆叠包括在激光源的工作波长中吸收的层。以脉冲重复频率激发激光脉冲的激光源被配置为烧蚀膜堆以暴露下层材料。激光源可以被配置为在单个脉冲重复中触发两个激光脉冲或单个时间不对称激光脉冲的脉冲，以在单个步骤中实现完全消融。

5. 发明申请

US20110059571A1 Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions 有权
标题翻译：背面接触太阳能电池与多晶硅掺杂区域的沟槽工艺和结构
公开(公告)号：US20110059571A1
公开(公告)日：2011-03-10
申请号：US12945555
申请日：2010-11-12
申请人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
发明人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
摘要翻译：太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

6. 发明申请

US20110003424A1 Back Side Contact Solar Cell Structures And Fabrication Processes 有权
标题翻译：背面接触太阳能电池结构和制造工艺
公开(公告)号：US20110003424A1
公开(公告)日：2011-01-06
申请号：US12883045
申请日：2010-09-15
申请人： Denis DE CEUSTER , Peter John COUSINS , Richard M. SWANSON , Jane E. MANNING
发明人： Denis DE CEUSTER , Peter John COUSINS , Richard M. SWANSON , Jane E. MANNING
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/022433 , H01L31/02363 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.
摘要翻译：在一个实施例中，太阳能电池的有源扩散接合通过从掺杂源选择性地沉积在晶片的背面上的掺杂剂扩散而形成。可以使用例如印刷方法选择性地沉积掺杂剂源。可以使用多种掺杂剂源来形成具有不同掺杂浓度的有源扩散区域。例如，可以制造三个或四个有源扩散区以优化太阳能电池的硅/电介质，硅/金属或两个界面。在使用使晶片材料的去除最小化的纹理化工艺形成掺杂剂源之前，可以对晶片的前侧进行纹理化。允许金属网格线连接到有源扩散结的开口可以使用自对准的接触开口蚀刻工艺形成，以最小化未对准的影响。

7. 发明授权

US07820475B2 Back side contact solar cell structures and fabrication processes 有权
标题翻译：背面接触太阳能电池结构和制造工艺
公开(公告)号：US07820475B2
公开(公告)日：2010-10-26
申请号：US11643743
申请日：2006-12-20
申请人： Denis De Ceuster , Peter John Cousins , Richard M. Swanson , Jane E. Manning
发明人： Denis De Ceuster , Peter John Cousins , Richard M. Swanson , Jane E. Manning
IPC分类号： H01L21/225 , H01L31/0224
CPC分类号： H01L31/18 , H01L31/022433 , H01L31/02363 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.
摘要翻译：在一个实施例中，太阳能电池的有源扩散接合通过从掺杂源选择性地沉积在晶片的背面上的掺杂剂扩散而形成。可以使用例如印刷方法选择性地沉积掺杂剂源。可以使用多种掺杂剂源来形成具有不同掺杂浓度的有源扩散区域。例如，可以制造三个或四个有源扩散区以优化太阳能电池的硅/电介质，硅/金属或两个界面。在使用使晶片材料的去除最小化的纹理化工艺形成掺杂剂源之前，可以对晶片的前侧进行纹理化。允许金属网格线连接到有源扩散结的开口可以使用自对准的接触开口蚀刻工艺形成，以最小化未对准的影响。

8. 发明申请

US20100075234A1 Generation Of Contact Masks For Inkjet Printing On Solar Cell Substrates 有权
标题翻译：在太阳能电池基板上生成用于喷墨印刷的接触面罩
公开(公告)号：US20100075234A1
公开(公告)日：2010-03-25
申请号：US12234970
申请日：2008-09-22
申请人： Peter John Cousins
发明人： Peter John Cousins
IPC分类号： G03F1/06 , B41J31/00
CPC分类号： H01L31/022425 , H01L31/18 , Y02E10/50
摘要： A contact mask for inkjet printing on a solar cell substrate may be generated by creating a printing bitmap of contacts to be printed on the solar cell substrate. The contacts may be located on the solar cell substrate by mapping coordinates of the printing bitmap to coordinates of the solar cell substrate as positioned in the inkjet printer. The location of the contacts on the solar cell substrate may be defined relative to a location on the solar cell substrate, such as relative to center of mass. The contact mask may be printed by the inkjet printer using the printing bitmap and location information of the contacts.
摘要翻译：可以通过产生要印刷在太阳能电池基板上的触点的打印位图来生成用于太阳能电池基板上的喷墨打印的接触掩模。通过将打印位图的坐标映射到位于喷墨打印机中的太阳能电池基板的坐标，可以将触点放置在太阳能电池基板上。可以相对于太阳能电池基板上的位置（例如相对于质心）来限定太阳能电池基板上的触点的位置。可以使用打印位图和触点的位置信息由喷墨打印机打印接触掩模。

9. 发明申请

US20090308438A1 Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions 有权
标题翻译：背面接触太阳能电池与多晶硅掺杂区域的沟槽工艺和结构
公开(公告)号：US20090308438A1
公开(公告)日：2009-12-17
申请号：US12392923
申请日：2009-02-25
申请人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
发明人： Denis DE CEUSTER , Peter John COUSINS , David D. SMITH
IPC分类号： H01L31/00 , H01L31/0352
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/02366 , H01L31/028 , H01L31/035272 , H01L31/035281 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/18 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.
摘要翻译：太阳能电池包括在诸如硅晶片的衬底的背面上的多晶硅P型和N型掺杂区域。中断的沟槽结构在一些位置中将P型掺杂区域与N型掺杂区域分离，但是允许P型掺杂区域和N型掺杂区域在其它位置接触。 P型和N型掺杂区中的每一个可以形成在薄的电介质层上。除了其它优点之外，所得的太阳能电池结构允许提高效率，同时具有相对较低的反向击穿电压。

10. 发明申请

US20160064576A1 LEAKAGE PATHWAY LAYER FOR SOLAR CELL 审中-公开
标题翻译：漏电路径太阳能电池
公开(公告)号：US20160064576A1
公开(公告)日：2016-03-03
申请号：US14939633
申请日：2015-11-12
申请人： Andy Luan , David D. Smith , Peter John Cousins , Sheng Sun
发明人： Andy Luan , David D. Smith , Peter John Cousins , Sheng Sun
IPC分类号： H01L31/02 , H01L31/0216
CPC分类号： H01L31/02008 , H01L31/02167 , H01L31/02168 , H01L31/0682 , Y02E10/547
摘要： Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.
摘要翻译：描述了用于太阳能电池的泄漏路径层和形成用于太阳能电池的泄漏路径层的方法。

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