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1. 发明申请

US20110014291A1 Novel Polymorphs of Bosentan 审中-公开
标题翻译：波生坦的新型多态性
公开(公告)号：US20110014291A1
公开(公告)日：2011-01-20
申请号：US12682112
申请日：2008-10-13
申请人： Girish Dixit , Nandkumar Gaikwad , Hima Prasad Naidu , Nitin Sharadchandra Pradhan , Jon Valgeirsson
发明人： Girish Dixit , Nandkumar Gaikwad , Hima Prasad Naidu , Nitin Sharadchandra Pradhan , Jon Valgeirsson
IPC分类号： A61K9/14 , C07D403/04 , A61K31/506 , A61P9/10 , A61P9/12
CPC分类号： C07D403/04
摘要： Disclosed herein are novel polymorphic forms of bosentan, processes for preparation, pharmaceutical compositions, and method of treating thereof.
摘要翻译：本文公开了波生坦的新型多晶型物，制备方法，药物组合物及其治疗方法。

2. 发明授权

US09098101B2 Supply noise current control circuit in bypass mode 有权
标题翻译：在旁路模式下提供噪声电流控制电路
公开(公告)号：US09098101B2
公开(公告)日：2015-08-04
申请号：US13772865
申请日：2013-02-21
申请人： Prasad Naidu , Deepak Pancholi
发明人： Prasad Naidu , Deepak Pancholi
IPC分类号： G05F1/00 , G05F1/10 , G05F3/02
CPC分类号： G05F1/10 , G05F1/56
摘要： A proposed inrush control circuit may work in the presence of supply noise. A linear regulator in bypass mode may be designed for inrush current control, but may be susceptible to irregularities from increased supply noise. The circuit may include a splitting of the bypass power MOS that are switched on with some delay during the power on to control the initial power-on inrush current.
摘要翻译：提出的浪涌控制电路可能在存在供电噪声的情况下工作。旁路模式中的线性稳压器可以设计用于浪涌电流控制，但可能会受到不断增加的电源噪声的影响。电路可以包括在通电期间以一定延迟被接通的旁路功率MOS的分离，以控制初始上电浪涌电流。

3. 发明申请

US20110021547A1 Substantially Pure and a Stable Crystalline Form of Bosentan 审中-公开
标题翻译：波斯坦的基本纯度和稳定的结晶形式
公开(公告)号：US20110021547A1
公开(公告)日：2011-01-27
申请号：US12864571
申请日：2009-01-22
申请人： Girish Dixit , Nandkumar Gaikwad , Hima Prasad Naidu , Nitin Sharadchandra Pradhan , Jon Valgeirsson
发明人： Girish Dixit , Nandkumar Gaikwad , Hima Prasad Naidu , Nitin Sharadchandra Pradhan , Jon Valgeirsson
IPC分类号： A61K31/513 , C07D403/04
CPC分类号： C07D403/04
摘要： Described is a highly stable crystalline form of bosentan having a water content in the range of about 3-4% by weight, based on the total weight of the bosentan, (bosentan crystalline form A5), a process for preparation thereof, and pharmaceutical compositions comprising the bosentan crystalline form A5. Provided also herein is a bosentan impurity, p-tert-butyl-N[6-hydroxy-5-(2-methoxyphenoxy)-2-(2-pyrimidinyl)-4-pyrimidinyl]benzenesulfonamide (deshydroxyethyl bosentan impurity), and process for preparing and isolating thereof. Further provided are highly pure bosentan or a pharmaceutically acceptable salt thereof substantially free of deshydroxyethyl bosentan and bosentan dimer impurities, process for the preparation thereof, and pharmaceutical compositions comprising solid particles of highly pure bosentan or a pharmaceutically acceptable salt thereof, wherein 90 volume-percent of the particles (D90) have a size of less than about 300 microns.
摘要翻译：描述了基于波生坦总重量（波生坦结晶形式A5），其制备方法和药物组合物的水含量在约3-4重量％范围内的波生坦的高度稳定的结晶形式包括波生坦晶体A5。本文还提供了一种波生坦杂质，对叔丁基-N [6-羟基-5-（2-甲氧基苯氧基）-2-（2-嘧啶基）-4-嘧啶基]苯磺酰胺（脱羟乙基波生坦杂质），和制备和分离。还提供了高纯度的波生坦或其药学上可接受的盐，其基本上不含脱羟基乙基波生坦和波生坦二聚体杂质，其制备方法以及包含高纯度波生坦固体颗粒或其药学上可接受的盐的药物组合物，其中90体积％的颗粒（D90）具有小于约300微米的尺寸。

4. 发明申请

US20140103890A1 SUPPLY NOISE CURRENT CONTROL CIRCUIT IN BYPASS MODE 有权
标题翻译：旁路模式下的供电噪声电流控制电路
公开(公告)号：US20140103890A1
公开(公告)日：2014-04-17
申请号：US13772865
申请日：2013-02-21
申请人： Prasad Naidu , Deepak Pancholi
发明人： Prasad Naidu , Deepak Pancholi
IPC分类号： G05F1/10
CPC分类号： G05F1/10 , G05F1/56
摘要： A proposed inrush control circuit may work in the presence of supply noise. A linear regulator in bypass mode may be designed for inrush current control, but may be susceptible to irregularities from increased supply noise. The circuit may include a splitting of the bypass power MOS that are switched on with some delay during the power on to control the initial power-on inrush current.
摘要翻译：提出的浪涌控制电路可能在存在供电噪声的情况下工作。旁路模式中的线性稳压器可以设计用于浪涌电流控制，但可能会受到不断增加的电源噪声的影响。电路可以包括在通电期间以一定延迟被接通的旁路功率MOS的分离，以控制初始上电浪涌电流。

5. 发明申请

US20140266290A1 PROCESS DETECTION CIRCUIT 审中-公开
标题翻译：过程检测电路
公开(公告)号：US20140266290A1
公开(公告)日：2014-09-18
申请号：US13897581
申请日：2013-05-20
申请人： Bhavin Odedara , Deepak Pancholi , Prasad Naidu
发明人： Bhavin Odedara , Deepak Pancholi , Prasad Naidu
IPC分类号： G01R31/26
CPC分类号： H01L22/34 , G01R31/2884
摘要： A process detection circuit can detect process information in both PMOS and NMOS devices without external components or trimming. The process detection circuit may be able to identify process information on a gate-source voltage (VGS) that represents process effects. Identified process information may be used to optimize system on a chip (SoC) operation.
摘要翻译：过程检测电路可以检测PMOS器件和NMOS器件中的工艺信息，无需外部元件或修整。过程检测电路可以能够识别关于表示过程效应的栅源电压（VGS）的处理信息。识别的过程信息可以用于优化芯片上的系统（SoC）操作。

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