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1. 发明授权

US08598576B2 Magnetic random access memory with field compensating layer and multi-level cell 有权
标题翻译：具有场补偿层和多级单元的磁随机存取存储器
公开(公告)号：US08598576B2
公开(公告)日：2013-12-03
申请号：US13029054
申请日：2011-02-16
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L29/66984 , B82Y40/00 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括在基板上形成的具有固定的垂直磁性部件的参考层。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

2. 发明授权

US08574928B2 MRAM fabrication method with sidewall cleaning 有权
标题翻译： MRAM制造方法与侧壁清洁
公开(公告)号：US08574928B2
公开(公告)日：2013-11-05
申请号：US13443818
申请日：2012-04-10
申请人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , H01L43/12
摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.
摘要翻译：描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。本发明的各种实施方案包括增强或优化方法的方法。如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

3. 发明申请

US20130244344A1 METHOD FOR MANUFACTURING HIGH DENSITY NON-VOLATILE MAGNETIC MEMORY 有权
标题翻译：制造高密度非挥发性磁记忆的方法
公开(公告)号：US20130244344A1
公开(公告)日：2013-09-19
申请号：US13610587
申请日：2012-09-11
申请人： Roger Klas Malmhall , Kimihiro Satoh , Jing Zhang , Parviz Keshtbod , Rajiv Yadav Ranjan
发明人： Roger Klas Malmhall , Kimihiro Satoh , Jing Zhang , Parviz Keshtbod , Rajiv Yadav Ranjan
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01L27/228
摘要： Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described. Embodiments are described that use a self-aligned double patterning method for one or both orthogonal line patterning steps to achieve dense arrays of MTJs with feature dimensions one half of the minimum photo lithography feature size (F). In one set of embodiments, the materials and thicknesses of the stack of layers that provide the masking function are selected so that after the initial set of mask pads have been patterned, a sequence of etching steps progressively transfers the mask pad shape through the multiple mask layer and down through all of the MTJ cell layers to the form the complete MTJ pillars. In another set of embodiments, the MTJ/BE stack is patterned into parallel lines before the top electrode layer is deposited.
摘要翻译：描述了使用两个正交线图案化步骤制造MTJ阵列的方法。描述了使用用于一个或两个正交线图案化步骤的自对准双图案化方法来实现特征尺寸为最小光刻特征尺寸（F）的一半的MTJ的致密阵列的实施例。在一组实施例中，选择提供掩模功能的层叠层的材料和厚度，使得在初始掩模焊盘组被图案化之后，一系列蚀刻步骤逐渐地将掩模焊盘形状传递通过多个掩模通过所有的MTJ单元层的层和下层形成完整的MTJ柱。在另一组实施例中，在沉积顶部电极层之前，将MTJ / BE叠层图案化成平行线。

4. 发明授权

US08488376B2 Non-volatile magnetic memory element with graded layer 有权
标题翻译：带分级层的非易失性磁记忆元件
公开(公告)号：US08488376B2
公开(公告)日：2013-07-16
申请号：US13476879
申请日：2012-05-21
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
IPC分类号： G11C11/14
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
摘要翻译：非易失性磁存储元件包括多个层，其中之一是分级的自由层。分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度是基于磁性化合物的反应性。

5. 发明申请

US20130088915A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER 有权
公开(公告)号：US20130088915A1
公开(公告)日：2013-04-11
申请号：US13475814
申请日：2012-05-18
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

6. 发明申请

US20130087870A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER 有权
标题翻译：具有分级层的非易失性磁记忆元件
公开(公告)号：US20130087870A1
公开(公告)日：2013-04-11
申请号：US13476904
申请日：2012-05-21
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
摘要翻译：非易失性磁存储元件包括多个层，其中之一是分级的自由层。分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度是基于磁性化合物的反应性。

7. 发明授权

US08169821B1 Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM) 有权
标题翻译：自旋转移磁力随机存取存储器（SSTTMRAM）的低结晶温度MTJ
公开(公告)号：US08169821B1
公开(公告)日：2012-05-01
申请号：US12907913
申请日：2010-10-19
申请人： Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , Y10S977/933
摘要： A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.
摘要翻译：公开了自旋转矩传递存储器随机存取存储器（STTMRAM）元件，并且具有固定层，形成在固定层上的阻挡层，以及由CoFeB-Z的低结晶温度合金构成的自由层，其中Z低于 25原子％的钛，（Ti），锂（Y），锆（Zr）和钒（V）中的一种或多种，其中在写入操作期间，在STTMRAM元件上施加双向电流以切换磁化的相对于固定层的磁化的平行和反平行状态之间的自由层。

8. 发明授权

US08164947B2 Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion 有权
标题翻译：低电流切换磁隧道结设计，用于使用畴壁运动的磁存储器
公开(公告)号：US08164947B2
公开(公告)日：2012-04-24
申请号：US12985028
申请日：2011-01-05
申请人： Rajiv Yadav Ranjan , Roger Klaus Malmhall , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Roger Klaus Malmhall , Parviz Keshtbod
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , H01L43/08
摘要： A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.
摘要翻译：公开了一种包括自由层，两个堆叠和磁性隧道结的多状态低电流切换磁存储元件（磁存储元件）。堆叠和磁性隧道结设置在自由层的表面上，磁性隧道结位于堆叠之间。堆叠在自由层内引导磁畴，产生自由层畴壁。从堆栈传递到堆栈的电流推动域壁，重新定位自由层内的域壁。畴壁相对于磁性隧道结的位置对应于唯一的电阻值，并且将电流从堆叠传递到磁性隧道结读取磁存储元件的电阻。因此，可以通过移动域壁来实现唯一的记忆状态。

9. 发明申请

US20120002463A1 HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY 有权
公开(公告)号：US20120002463A1
公开(公告)日：2012-01-05
申请号：US13235224
申请日：2011-09-16
申请人： Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Mahmud Assar , Parviz Keshtbod
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , B82Y10/00 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/5607 , G11C2211/5615 , H01L27/222 , H01L27/228 , H01L43/08
摘要： A multi-state current-switching magnetic memory element includes a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

10. 发明申请

US20110305078A1 LOW COST MULTI-STATE MAGNETIC MEMORY 有权
标题翻译：低成本多状态磁记忆
公开(公告)号：US20110305078A1
公开(公告)日：2011-12-15
申请号：US13216997
申请日：2011-08-24
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/5607
摘要： A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.
摘要翻译：多状态电流切换磁存储元件具有磁隧道结（MTJ），用于存储多于一位的信息。 MTJ包括固定层，阻挡层和不均匀的自由层。在一个实施例中，当每个单元具有2位时，当四个不同电平的电流之一被施加到存储元件时，所施加的电流使MTJ的非均匀自由层切换到四个不同的磁状态之一。 MTJ的宽开关电流分布是非均匀自由层的宽晶粒尺寸分布的结果。

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