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1. 发明授权

US08565019B2 Method for controlling threshold value in nonvolatile semiconductor memory device 失效
标题翻译：用于控制非易失性半导体存储器件中的阈值的方法
公开(公告)号：US08565019B2
公开(公告)日：2013-10-22
申请号：US12273845
申请日：2008-11-19
申请人： Yasuhiko Honda , Ryu Hondai , Manabu Satoh
发明人： Yasuhiko Honda , Ryu Hondai , Manabu Satoh
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C2211/5621
摘要： A method for controlling a threshold value in a nonvolatile semiconductor memory device, includes: performing writing at least once on at least one of the memory cells to be adjusted to a state other than an erased state with an applied voltage that does not cause excess writing, with verify reading being not performed; and performing verify reading by applying a verify voltage corresponding to a target threshold value of the memory cell after the writing is performed on the at least one of the memory cells to be adjusted to the state other than the erased state, and, when the threshold value of the memory cell is determined to be lower than the target threshold value, repeating the writing with the applied voltage that does not cause excess writing and the verify reading until the threshold value of the memory cell becomes equal to or higher than the target threshold value.
摘要翻译：一种用于控制非易失性半导体存储器件中的阈值的方法，包括：至少一个存储器单元执行至少一次的写入，以将其调整到不是擦除状态的状态，其中所施加的电压不会导致过多的写入，不执行验证读取; 以及在对所述至少一个所述存储器单元执行写入之后，通过应用与所述存储单元的目标阈值对应的验证电压来执行验证读取，以将所述至少一个所述存储器单元调整到除了所述擦除状态之外的状态，以及当所述阈值存储单元的值被确定为低于目标阈值，重复以不引起过量写入的施加电压和验证读取的写入，直到存储单元的阈值变为等于或高于目标阈值值。

2. 发明申请

US20090129157A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING THRESHOLD VALUE IN NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：非易失性半导体存储器件的非线性半导体存储器件和控制非线性半导体存储器件中的阈值的方法
公开(公告)号：US20090129157A1
公开(公告)日：2009-05-21
申请号：US12273845
申请日：2008-11-19
申请人： Yasuhiko HONDA , Ryu Hondai , Manabu Satoh
发明人： Yasuhiko HONDA , Ryu Hondai , Manabu Satoh
IPC分类号： G11C16/00 , G11C16/06 , G11C7/00
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C2211/5621
摘要： A method for controlling a threshold value in a nonvolatile semiconductor memory device, includes: performing writing at least once on at least one of the memory cells to be adjusted to a state other than an erased state with an applied voltage that does not cause excess writing, with verify reading being not performed; and performing verify reading by applying a verify voltage corresponding to a target threshold value of the memory cell after the writing is performed on the at least one of the memory cells to be adjusted to the state other than the erased state, and, when the threshold value of the memory cell is determined to be lower than the target threshold value, repeating the writing with the applied voltage that does not cause excess writing and the verify reading until the threshold value of the memory cell becomes equal to or higher than the target threshold value.
摘要翻译：一种用于控制非易失性半导体存储器件中的阈值的方法，包括：至少一个存储器单元执行至少一次的写入，以将其调整到不是擦除状态的状态，其中所施加的电压不会导致过多的写入，不执行验证读取; 以及在对所述至少一个所述存储器单元执行写入之后，通过应用与所述存储单元的目标阈值对应的验证电压来执行验证读取，以将所述至少一个所述存储器单元调整到除了所述擦除状态之外的状态，以及当所述阈值存储单元的值被确定为低于目标阈值，重复以不引起过量写入的施加电压和验证读取的写入，直到存储单元的阈值变为等于或高于目标阈值值。

3. 发明授权

US08098532B2 Non-volatile semiconductor storage device with address search circuit used when writing 有权
标题翻译：写入时使用地址搜索电路的非易失性半导体存储器件
公开(公告)号：US08098532B2
公开(公告)日：2012-01-17
申请号：US12273813
申请日：2008-11-19
申请人： Yuji Komine , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
发明人： Yuji Komine , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
IPC分类号： G11C7/10
CPC分类号： G11C16/10 , G11C11/5628 , G11C15/046 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459
摘要： A non-volatile semiconductor storage device includes a memory cell array having a plurality of non-volatile memory cells, an address search circuit which searches for write object data and outputs an address where the write object data is present, when writing data into the non-volatile memory cells, and a control circuit which exercises control to write the write object data into the non-volatile memory cells in accordance with the address output from the address search circuit.
摘要翻译：非挥发性半导体存储装置包括具有多个非易失性存储单元的存储单元阵列，地址搜索电路，当将数据写入非易失性存储单元时，搜索写入对象数据并输出存在写入对象数据的地址并且控制电路根据从地址搜索电路输出的地址进行控制以将写入目标数据写入非易失性存储单元。

4. 发明申请

US20090129156A1 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：非挥发性半导体存储器件
公开(公告)号：US20090129156A1
公开(公告)日：2009-05-21
申请号：US12273813
申请日：2008-11-19
申请人： Yuji KOMINE , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
发明人： Yuji KOMINE , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
IPC分类号： G11C16/06 , G11C11/34 , G11C7/10
CPC分类号： G11C16/10 , G11C11/5628 , G11C15/046 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459
摘要： A non-volatile semiconductor storage device includes a memory cell array having a plurality of non-volatile memory cells, an address search circuit which searches for write object data and outputs an address where the write object data is present, when writing data into the non-volatile memory cells, and a control circuit which exercises control to write the write object data into the non-volatile memory cells in accordance with the address output from the address search circuit.
摘要翻译：非易失性半导体存储装置包括具有多个非易失性存储单元的存储单元阵列，地址搜索电路，当将数据写入非易失性存储单元时，搜索写入对象数据并输出存在写入对象数据的地址并且控制电路根据从地址搜索电路输出的地址进行控制以将写入目标数据写入非易失性存储单元。

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