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1. 发明授权

US09223245B2 Developing device to form a uniform developer layer on a developing member and electrophotographic image forming apparatus using the same 有权
标题翻译：显影装置在显影构件上形成均匀的显影剂层，并使用其形成电子照相成像装置
公开(公告)号：US09223245B2
公开(公告)日：2015-12-29
申请号：US13667726
申请日：2012-11-02
申请人： Mitsuru Oikawa , Sang-don Lee , Jong-pil Jun
发明人： Mitsuru Oikawa , Sang-don Lee , Jong-pil Jun
IPC分类号： G03G15/00 , G03G15/08 , G03G15/09
CPC分类号： G03G15/0812 , G03G15/09 , G03G2215/0609
摘要： A developing device to supply toner in a developer, including a development member which receives the developer on an outer circumferential surface thereof and supplies the toner to the image bearing member, a first regulation member including a first regulating portion that forms a first doctor gap between the outer circumferential surface of the development member and the first regulating portion, and a second regulation member disposed on an upstream side of the first regulation member in a rotational direction of the development member and includes a second regulating portion that forms a second doctor gap between the outer circumferential surface of the development member and the second regulating portion, the second doctor gaps at a central portion and both end portions in a longitudinal direction of the development member being different from each other.
摘要翻译：一种用于在显影剂中供应调色剂的显影装置，包括显影部件，该显影部件在其外圆周表面上容纳显影剂，并将调色剂供应到图像承载部件;第一调节部件，包括第一调节部分，显影元件的外圆周表面和第一调节部分，以及设置在显影元件的旋转方向上的第一调节元件的上游侧的第二调节元件，并且包括第二调节部分，显影元件的外圆周表面和第二调节部分，中央部分的第二刮刀间隙和显影元件的纵向方向上的两个端部彼此不同。

2. 发明授权

US08417133B2 Apparatus and method for supplying charge voltage to organic photoconductor drum 有权
标题翻译：向有机感光鼓提供充电电压的装置和方法
公开(公告)号：US08417133B2
公开(公告)日：2013-04-09
申请号：US12923225
申请日：2010-09-09
申请人： Myung-kook Ahn , Sang-don Lee , Sung-min Park
发明人： Myung-kook Ahn , Sang-don Lee , Sung-min Park
IPC分类号： G03G15/02
CPC分类号： G03G15/0275 , G03G15/0266 , G03G15/55 , G03G15/553 , G03G2215/00776
摘要： Provided is an apparatus and method for supplying a charge voltage to an organic photoconductor (OPC) drum. The apparatus includes a storage unit for storing first service life information of the OPC drum according to a first supplying method, and second service life information of the OPC drum according to a second supplying method, a sensor unit for measuring information about conditions surrounding the apparatus, a control unit for selecting one of the first and second supplying methods according to the measured information and determining a charge voltage corresponding to the service life information according to the selected method, and a voltage supplying unit using the selected method to supply the determined charge voltage to the OPC drum.
摘要翻译：提供了一种用于向有机感光鼓（OPC）鼓提供充电电压的装置和方法。该装置包括存储单元，用于根据第一供应方法存储OPC滚筒的第一使用寿命信息，以及根据第二提供方法存储OPC滚筒的第二使用寿命信息;传感器单元，用于测量关于设备周围的条件的信息控制单元，用于根据所测量的信息选择第一和第二供给方法之一，并根据所选择的方法确定与使用寿命信息相对应的充电电压;以及电压提供单元，使用所选择的方法来提供所确定的电荷电压到OPC鼓。

3. 发明授权

US08187940B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08187940B2
公开(公告)日：2012-05-29
申请号：US12881091
申请日：2010-09-13
申请人： Sang Don Lee , Jae Goan Jeong
发明人： Sang Don Lee , Jae Goan Jeong
IPC分类号： H01L21/336
CPC分类号： H01L29/66553 , H01L21/84 , H01L27/10873 , H01L27/10876 , H01L27/1203 , H01L29/4236 , H01L29/42376 , H01L29/66621
摘要： A method for fabricating a semiconductor device, including (a) etching a semiconductor substrate to form a first trench defining an active region; (b) forming a first spacer on sidewalls of the first trench; (c) etching a bottom of the first trench to form a second trench; (d) etching a sidewall of the second trench to form a third trench including an undercut space; (e) forming a device isolation structure that fills the first, second and third trenches; (f) etching the semiconductor substrate of a gate region to form a recess; and (g) forming a gate that fills the recess.
摘要翻译：一种制造半导体器件的方法，包括（a）蚀刻半导体衬底以形成限定有源区的第一沟槽; （b）在第一沟槽的侧壁上形成第一间隔物; （c）蚀刻所述第一沟槽的底部以形成第二沟槽; （d）蚀刻第二沟槽的侧壁以形成包括底切空间的第三沟槽; （e）形成填充所述第一，第二和第三沟槽的器件隔离结构; （f）蚀刻栅极区域的半导体衬底以形成凹部; 和（g）形成填充凹部的浇口。

4. 发明授权

US08125844B2 Semiconductor memory device for low voltage 失效
标题翻译：用于低电压的半导体存储器件
公开(公告)号：US08125844B2
公开(公告)日：2012-02-28
申请号：US12578358
申请日：2009-10-13
申请人： Hee-Bok Kang , Jin-Hong Ahn , Sang-Don Lee
发明人： Hee-Bok Kang , Jin-Hong Ahn , Sang-Don Lee
IPC分类号： G11C7/00
CPC分类号： G11C11/4091 , G11C7/065 , G11C7/14 , G11C7/18 , G11C11/4097 , G11C11/4099 , G11C2207/005
摘要： A semiconductor memory device includes a first cell array including a plurality of unit cells and a bit line sense amplifying unit for sensing and amplifying data signals stored in the unit cells. Each unit cell is provided with a PMOS transistor and a capacitor. Therefore, the semiconductor memory device efficiently operates with low voltage without any degradation of operation speed.
摘要翻译：半导体存储器件包括包括多个单位单元的第一单元阵列和用于感测和放大存储在单位单元中的数据信号的位线读出放大单元。每个单元单元设置有PMOS晶体管和电容器。因此，半导体存储器件以低电压有效地工作，而不会降低操作速度。

5. 发明授权

US07960761B2 Semiconductor device having a recess channel transistor 有权
标题翻译：具有凹槽通道晶体管的半导体器件
公开(公告)号：US07960761B2
公开(公告)日：2011-06-14
申请号：US12615210
申请日：2009-11-09
申请人： Sung Woong Chung , Sang Don Lee
发明人： Sung Woong Chung , Sang Don Lee
IPC分类号： H01L29/78 , H01L29/94
CPC分类号： H01L29/66621 , H01L27/10876
摘要： The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof and a recess channel region formed in the semiconductor substrate under the active region. A method for fabricating the semiconductor device includes forming a device isolation structure in a semiconductor substrate to form an active region having a recess region at a lower part of sidewalls thereof, a gate insulating film formed over the semiconductor substrate including the recess channel region, and a gate electrode formed over the gate insulating film to fill up the recess channel region.
摘要翻译：具有凹陷沟道晶体管的半导体器件包括形成在半导体衬底中的器件隔离结构，以限定其侧壁下部具有凹陷区域的有源区域和在有源区域下形成在半导体衬底中的凹槽沟道区域。一种制造半导体器件的方法包括：在半导体衬底中形成器件隔离结构，以形成在其侧壁的下部具有凹陷区域的有源区，形成在包括凹槽沟道区域的半导体衬底上的栅极绝缘膜，以及形成在所述栅极绝缘膜上方以填充所述凹陷沟道区域的栅电极。

6. 发明申请

US20100322754A1 Apparatus for Substrate Alignment, Apparatus for Substrate Processing Having the Same, and Substrate Alignment Method 有权
标题翻译：用于基板对准的装置，具有相同基板处理的装置和基板对准方法
公开(公告)号：US20100322754A1
公开(公告)日：2010-12-23
申请号：US12796354
申请日：2010-06-08
申请人： Sang Don LEE , Chi Wook YU
发明人： Sang Don LEE , Chi Wook YU
IPC分类号： B65G1/133 , H01L21/68
CPC分类号： C23C16/042 , C23C16/4585 , H01L21/682
摘要： Disclosed are a substrate alignment apparatus precisely and automatically aligning a mask on a substrate by sequentially moving the substrate and the mask horizontally on a susceptor being driven up and down, a substrate processing apparatus including the same, and a substrate alignment method. The substrate alignment apparatus includes a position fixing unit protruding from an upper surface of the susceptor driven up and down in a chamber so as to form a reference line for alignment of the substrate and the mask, a horizontal transfer unit connected at outer surfaces of two sidewalls of the chamber and extended into the chamber to align the substrate and the mask according to the up and down movement of the susceptor until the substrate and the mask are stopped by the position fixing unit from horizontally moving, and a control unit adapted to control the susceptor and the horizontal transfer unit.
摘要翻译：公开了一种基板对准装置，通过在上下驱动的基座上水平地移动基板和掩模，基板处理装置和基板对准方法，将基板上的掩模精确自动地对准。基板对准装置具有从基座的上表面突出的位置固定单元，其在室内上下移动，以形成用于基板和掩模对准的参考线;水平传送单元，其在两个外表面处连接所述腔室的侧壁延伸到所述腔室中，以根据所述基座的上下移动来对准所述基底和所述掩模，直到所述基片和所述掩模被所述位置固定单元水平移动而停止;以及控制单元，基座和水平传送单元。

7. 发明授权

US07816730B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07816730B2
公开(公告)日：2010-10-19
申请号：US11846509
申请日：2007-08-28
申请人： Sang Don Lee
发明人： Sang Don Lee
IPC分类号： H01L29/78
CPC分类号： H01L29/7851 , H01L29/66621 , H01L29/66795 , H01L29/7854
摘要： A semiconductor device comprises a fin-type active region defined by a semiconductor substrate having a device isolation structure, a recess formed over the fin-type active region, and a gate electrode including a silicon germanium (Si1-xGex) layer for fill the recess (where 0
摘要翻译：半导体器件包括由具有器件隔离结构的半导体衬底限定的鳍型有源区，形成在鳍式有源区上的凹部和包括用于填充凹槽的硅锗（Si1-xGex）层的栅电极（其中0

8. 发明授权

US07795670B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07795670B2
公开(公告)日：2010-09-14
申请号：US11279637
申请日：2006-04-13
申请人： Sang Don Lee , Jae Goan Jeong
发明人： Sang Don Lee , Jae Goan Jeong
IPC分类号： H01L27/108
CPC分类号： H01L29/66553 , H01L21/84 , H01L27/10873 , H01L27/10876 , H01L27/1203 , H01L29/4236 , H01L29/42376 , H01L29/66621
摘要： The semiconductor device includes an active region, a recess channel region, a storage node junction region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate, wherein a lower part of sidewalls of the active region is recessed. The recess channel is formed in the semiconductor substrate under the active region, wherein the recess channel has a vertical channel region and a horizontal channel region. The storage node junction region is formed over the device isolation structure and the semiconductor substrate. The gate insulating film is formed over the active region including the recess channel region. The gate electrode is formed over the gate insulating film to fill up the recess channel region.
摘要翻译：半导体器件包括有源区，凹陷沟道区，存储节点结区，栅极绝缘膜和栅电极。有源区由半导体衬底中形成的器件隔离结构限定，其中有源区的侧壁的下部凹入。所述凹槽在所述有源区域的半导体衬底内形成，所述凹槽具有垂直沟道区域和水平沟道区域。存储节点结区形成在器件隔离结构和半导体衬底之上。栅极绝缘膜形成在包括凹槽沟道区域的有源区域上。栅电极形成在栅极绝缘膜上，以填充凹槽沟道区域。

9. 发明申请

US20090296453A1 Semiconductor Memory Apparatus 失效
标题翻译：半导体存储器
公开(公告)号：US20090296453A1
公开(公告)日：2009-12-03
申请号：US12264832
申请日：2008-11-04
申请人： Sang Don Lee , Jung Ho Lee , Tae Su Jang
发明人： Sang Don Lee , Jung Ho Lee , Tae Su Jang
IPC分类号： G11C5/14 , G11C11/24
CPC分类号： G11C11/404 , G11C7/04 , G11C11/406
摘要： A semiconductor memory apparatus includes a unit cell with a transistor having a floated body and a capacitor for storing charges; a word line for activating the unit cell; and a bit line for transmitting data to the unit cell.
摘要翻译：一种半导体存储装置，包括具有带有浮体的晶体管的单元电池和用于存储电荷的电容器; 用于激活单元的字线; 以及用于将数据发送到单元的位线。

10. 发明申请

US20090173992A1 SEMICONDUCTOR DEVICE WITH IMPROVED PERFORMANCE CHARACTERISTICS 有权
标题翻译：具有改进性能特性的半导体器件
公开(公告)号：US20090173992A1
公开(公告)日：2009-07-09
申请号：US12323391
申请日：2008-11-25
申请人： Sang Don Lee , Sung Woong Chung
发明人： Sang Don Lee , Sung Woong Chung
IPC分类号： H01L29/78
CPC分类号： H01L29/66795 , H01L21/823437 , H01L29/4236 , H01L29/66621 , H01L29/7851
摘要： The semiconductor device includes an active region, a recess, a Fin channel region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess is formed by etching the active region and its neighboring device isolation structure using an island shaped recess gate mask as an etching mask. The Fin channel region is formed on the semiconductor substrate at a lower part of the recess. The gate insulating film is formed over the active region including the Fin channel region and the recess. The gate electrode is formed over the gate insulating film to fill up the Fin channel region and the recess.
摘要翻译：半导体器件包括有源区，凹槽，Fin沟道区，栅极绝缘膜和栅电极。有源区由半导体衬底中形成的器件隔离结构限定。通过使用岛状凹陷栅极掩模作为蚀刻掩模来蚀刻有源区及其邻近的器件隔离结构来形成凹部。鳍状沟道区在凹部的下部形成在半导体衬底上。栅极绝缘膜形成在包括鳍状沟道区域和凹部的有源区域上。栅电极形成在栅极绝缘膜上，以填充鳍沟道区域和凹槽。

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