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1. 发明授权

US09469001B2 Machine tool 有权
标题翻译：机床
公开(公告)号：US09469001B2
公开(公告)日：2016-10-18
申请号：US14409776
申请日：2012-06-25
申请人： Shinji Koike , Kazuya Mayumi , Satoshi Kobayashi
发明人： Shinji Koike , Kazuya Mayumi , Satoshi Kobayashi
IPC分类号： B23Q1/01 , B23C1/027 , B23Q1/70 , B23Q11/00
CPC分类号： B23Q1/015 , B23C1/027 , B23C2230/00 , B23Q1/017 , B23Q1/70 , B23Q11/0042 , B23Q11/0053 , B23Q11/0067 , Y02P70/171 , Y10T409/30392 , Y10T409/304088
摘要： A machine tool includes: a bed, the upper surface of which has the table provided thereon; a cut debris duct which is provided so as to extend rearward from a cut debris discharge opening open at the center, in the left-right direction, of the rear face of the bed, and which discharges cut debris from within the bed to outside of the machine tool; a bifurcated vertically movable body which vertically moves along a pair of vertical guides, and which straddles the cut debris duct, the pair of vertical guides vertically extending on the rear face of the bed at positions on both the left and right sides of the cut debris duct; and a pair of left and right feed screws which extend parallel to the vertical guides, and which move the vertically movable body along the vertical guides.
摘要翻译：一种机床包括：床，其上表面设置有桌子; 切割的碎屑管被设置成从床的后表面的中心的左右方向上的切割碎屑排出口向后延伸，并且将切碎的碎屑从床内排出到机床; 一个分叉的可垂直移动的主体，其沿着一对垂直引导件垂直移动，并且跨越切割的碎屑管道，一对垂直引导件在切割碎片的左侧和右侧的位置处垂直延伸在床的后表面上管; 以及一对平行于垂直导向件延伸的左右进给螺钉，并使垂直移动体沿垂直导向件移动。

2. 发明授权

US08846779B2 Energy ray-curable ink composition 有权
标题翻译：能量射线固化型油墨组合物
公开(公告)号：US08846779B2
公开(公告)日：2014-09-30
申请号：US12921957
申请日：2009-05-15
申请人： Katsuyuki Kito , Masayuki Oya , Satoshi Kobayashi
发明人： Katsuyuki Kito , Masayuki Oya , Satoshi Kobayashi
IPC分类号： C08F2/50 , C09D11/00 , C08J3/28 , C09D11/101 , C09D11/38
CPC分类号： C09D11/101 , C09D11/38 , Y10S522/909
摘要： The present invention provides an energy ray-curable ink composition excellent in the continuous discharge property, and excellent in curability and adherability. The present invention relates to an energy ray-curable ink composition which contains a coloring agent, contains only a monofunctional monomer having an acrylic equivalent of 300 or less, and having one ethylenic double bond in one molecule, and a polyfunctional monomer having an acrylic equivalent of 150 or less, and having two or more ethylenic double bonds in one molecule as a polymerizable compound, contains an α-aminoalkylphenone compound and a thioxanthone compound as a photopolymerization initiator, and contains a silicone compound having a polydimethylsiloxane structure as a surface conditioner.
摘要翻译：本发明提供了连续放电性优异，固化性和粘接性优异的能量射线固化性油墨组合物。本发明涉及一种含有着色剂的能量射线固化性油墨组合物，其仅含有丙烯酸当量为300以下，单分子中具有1个烯属双键的单官能单体和具有丙烯酸当量的多官能单体 150以下，在1分子中具有2个以上的烯属双键作为聚合性化合物，含有α-氨基烷基苯酮化合物和噻吨酮化合物作为光聚合引发剂，并含有作为表面调节剂的聚二甲基硅氧烷结构的硅氧烷化合物。

3. 发明授权

US08633485B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08633485B2
公开(公告)日：2014-01-21
申请号：US13075436
申请日：2011-03-30
申请人： Satoshi Kobayashi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Daisuke Kawae
发明人： Satoshi Kobayashi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Daisuke Kawae
IPC分类号： H01L31/00 , H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112 , H01L21/02
CPC分类号： H01L29/41733 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided over the gate insulating film and having a microcrystalline semiconductor, a second semiconductor layer provided over the first semiconductor layer and having an amorphous semiconductor, and a source region and a drain region provided over the second semiconductor layer are provided. The first semiconductor layer has high crystallinity than the second semiconductor layer. The second semiconductor layer includes an impurity region having a conductivity type different from a conductivity type of the source region and the drain region between the source region and the drain region.
摘要翻译：提供具有高电特性和优异可靠性的薄膜晶体管的显示装置及其制造方法。栅电极，设置在栅电极上的栅极绝缘膜，设置在栅绝缘膜上并具有微晶半导体的第一半导体层，设置在第一半导体层上并具有非晶半导体的第二半导体层，以及源极区并且设置在第二半导体层上的漏极区。第一半导体层具有比第二半导体层高的结晶度。第二半导体层包括具有不同于源极区域的导电类型和源极区域与漏极区域之间的漏极区域的导电类型的杂质区域。

4. 发明授权

US08378340B2 Aromatic compound 有权
标题翻译：芳香族化合物
公开(公告)号：US08378340B2
公开(公告)日：2013-02-19
申请号：US13487405
申请日：2012-06-04
申请人： Satoshi Kobayashi , Satoshi Mikami
发明人： Satoshi Kobayashi , Satoshi Mikami
IPC分类号： H01L35/24 , C07D333/76
CPC分类号： C07D307/91
摘要： An aromatic compound of the following formula (1), (2), (5) or (6), wherein, Ar1 and Ar3 represent a tetra-valent aromatic hydrocarbon group or a tetra-valent heterocyclic group, and Ar2, Ar4, Ar5, Ar6 and Ar7 represent a tri-valent aromatic hydrocarbon group or a tri-valent heterocyclic group, A1 represents —Z1—, —Z2—Z3— or —Z4═Z5—, wherein Z1, Z2 and Z3 represent O, S or the like and Z4 and Z5 represent N, B, P or the like, X1, X2, X3, X4, X9, X10, X11, and X12 represent a halogen atom or the like.
摘要翻译：下式（1），（2），（5）或（6）的芳族化合物，其中Ar1和Ar3表示四元芳香族烃基或四价杂环基，Ar2，Ar4，Ar5 中，Ar 6和Ar 7表示3价芳香族烃基或3价杂环基，A1表示-Z 1 - ，Z 2 -Z 3 - 或-Z 4 = Z 5 - ，其中Z 1，Z 2和Z 3表示O，S或 Z 4和Z 5表示N，B，P等，X 1，X 2，X 3，X 4，X 9，X 10，X 11和X 12表示卤素原子等。

5. 发明授权

US08307522B2 Machine tool and pallet standby station 有权
标题翻译：机床和托盘备用站
公开(公告)号：US08307522B2
公开(公告)日：2012-11-13
申请号：US12439026
申请日：2006-09-04
申请人： Satoshi Kobayashi
发明人： Satoshi Kobayashi
IPC分类号： B23Q7/00
CPC分类号： B23Q3/18 , B23Q1/0072 , Y10T29/5196
摘要： A machine tool and pallet standby station using a crane for changing a pallet between a table or pallet mounting table (27) of the machine tool and the pallet standby station are provided. The table (27) includes a plurality of guide pins (31) having tapered front ends, a plurality of elevatable lift pins (35) having spherical front ends, and a plurality of taper cones (37) having tapered outer peripheral surfaces. On the other hand, the pallet (P) includes at least two brackets (39) attached so as to project in the side directions from the two side surfaces of the pallet, and each bracket is formed with a guide hole (41) into which a guide pin (31) is inserted for rough positioning of the pallet. Further, the bottom of the pallet (P) is formed with a plurality of locate holes (45) having tapered inner peripheral surfaces and engaging with the spherical front ends of the lift pins for precision positioning of the pallet and a plurality of taper holes (47) having shapes complementary with the taper cones (37) and engaging with the taper cones for final positioning of the pallet.
摘要翻译：提供了一种使用起重机的机床和托盘备用站，用于在机床的工作台或托盘安装台（27）和托盘备用站之间更换托盘。工作台（27）包括具有锥形前端的多个导向销（31），具有球形前端的多个可升降提升销（35）和具有锥形外周表面的多个锥形锥体（37）。另一方面，托盘（P）包括至少两个托架（39），其从托盘的两个侧表面沿侧向突出安装，并且每个托架形成有引导孔（41），托架插入导销（31）用于托盘的粗略定位。此外，托盘（P）的底部形成有多个具有锥形内周面的定位孔（45），并与提升销的球形前端接合，用于托盘的精确定位和多个锥孔 47）具有与锥形锥体（37）互补的形状并与锥形锥体接合以最终定位托盘。

6. 发明申请

US20120193620A1 TRANSISTOR AND SEMICONDUCTOR DEVICE 有权
标题翻译：晶体管和半导体器件
公开(公告)号：US20120193620A1
公开(公告)日：2012-08-02
申请号：US13358556
申请日：2012-01-26
申请人： Hiromichi GODO , Satoshi KOBAYASHI , Masashi TSUBUKU
发明人： Hiromichi GODO , Satoshi KOBAYASHI , Masashi TSUBUKU
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L29/42384
摘要： A transistor which withstands a high voltage and controls large electric power can be provided. A transistor is provided which includes a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode, and a source electrode and a drain electrode which are in contact with the oxide semiconductor layer and whose end portions overlap with the gate electrode. The gate insulating layer includes a first region overlapping with the end portion of the drain electrode and a second region adjacent to the first region. The first region has smaller capacitance than the second region.
摘要翻译：可以提供耐受高电压并控制大电力的晶体管。提供一种晶体管，其包括栅电极，栅电极上的栅极绝缘层，栅极绝缘层上方并与栅电极重叠的氧化物半导体层，以及与栅电极接触的源电极和漏电极氧化物半导体层，其端部与栅电极重叠。栅极绝缘层包括与漏电极的端部重叠的第一区域和与第一区域相邻的第二区域。第一区域具有比第二区域小的电容。

7. 发明申请

US20120129288A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：其显示装置及其制造方法
公开(公告)号：US20120129288A1
公开(公告)日：2012-05-24
申请号：US13361998
申请日：2012-01-31
申请人： Satoshi KOBAYASHI , Ikuko Kawamata , Koji Dairiki , Shigeki Komori , Toshiyuki Isa , Shunpei Yamazaki
发明人： Satoshi KOBAYASHI , Ikuko Kawamata , Koji Dairiki , Shigeki Komori , Toshiyuki Isa , Shunpei Yamazaki
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
摘要翻译：一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

8. 发明申请

US20120104385A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120104385A1
公开(公告)日：2012-05-03
申请号：US13279868
申请日：2011-10-24
申请人： Hiromichi GODO , Satoshi KOBAYASHI
发明人： Hiromichi GODO , Satoshi KOBAYASHI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78648
摘要： A semiconductor device includes a first gate electrode; a gate insulating layer covering the first gate electrode; an oxide semiconductor layer that overlaps with the first gate electrode; oxide semiconductor layers having high carrier density covering end portions of the oxide semiconductor layer; a source electrode and a drain electrode in contact with the oxide semiconductor layers having high carrier density; an insulating layer covering the source electrode, the drain electrode, and the oxide semiconductor layer; and a second gate electrode that is in contact with the insulating layer. Each of the oxide semiconductor layers is in contact with part of each of an upper surface, a lower surface, and a side surface of one of the end portions of the oxide semiconductor layer and part of an upper surface of the gate insulating layer.
摘要翻译：半导体器件包括第一栅电极; 覆盖所述第一栅电极的栅极绝缘层; 与所述第一栅电极重叠的氧化物半导体层; 具有覆盖氧化物半导体层的端部的高载流子密度的氧化物半导体层; 与具有高载流子密度的氧化物半导体层接触的源电极和漏电极; 覆盖源电极，漏电极和氧化物半导体层的绝缘层; 以及与绝缘层接触的第二栅电极。每个氧化物半导体层与氧化物半导体层的一个端部和栅极绝缘层的上表面的一部分的上表面，下表面和侧表面的一部分接触。

9. 发明申请

US20120061662A1 SEMICONDUCTOR DEVICE, POWER DIODE, AND RECTIFIER 有权
标题翻译：半导体器件，功率二极管和整流器
公开(公告)号：US20120061662A1
公开(公告)日：2012-03-15
申请号：US13220992
申请日：2011-08-30
申请人： Shunpei YAMAZAKI , Hiromichi GODO , Satoshi KOBAYASHI
发明人： Shunpei YAMAZAKI , Hiromichi GODO , Satoshi KOBAYASHI
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/42356 , H01L29/78648
摘要： An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
摘要翻译：本发明的目的是提供具有诸如高耐受电压，低反向饱和电流和高导通电流等电特性的半导体器件。特别地，目的是提供一种包括非线性元件的功率二极管和整流器。本发明的一个实施例是一种半导体器件，包括第一电极，覆盖第一电极的栅极绝缘层，与栅极绝缘层接触并与第一电极重叠的氧化物半导体层，覆盖端部的一对第二电极所述氧化物半导体层的绝缘层，覆盖所述一对第二电极和所述氧化物半导体层的绝缘层，以及与所述绝缘层和所述一对第二电极接触的第三电极。一对第二电极与氧化物半导体层的端面接触。

10. 发明授权

US08120030B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08120030B2
公开(公告)日：2012-02-21
申请号：US12633067
申请日：2009-12-08
申请人： Hiromichi Godo , Satoshi Kobayashi , Hidekazu Miyairi , Toshiyuki Isa , Shunpei Yamazaki
发明人： Hiromichi Godo , Satoshi Kobayashi , Hidekazu Miyairi , Toshiyuki Isa , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L27/12 , H01L29/04
摘要： Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more.
摘要翻译：其中半导体层被栅极电极遮挡光的底栅薄膜晶体管的截止电流减小。薄膜晶体管包括栅电极层; 第一半导体层; 第二半导体层，设置在第一半导体层上并与第一半导体层接触; 在栅极电极层和第一半导体层之间并与之接触的栅极绝缘层; 与第二半导体层接触的杂质半导体层; 以及与杂质半导体层和第一和第二半导体层部分接触的源极和漏极电极层。栅极电极层侧的第一半导体层的整个表面被栅电极层覆盖; 并且在第一半导体层与源极或漏极电极层接触的部分处的势垒为0.5eV以上。

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