专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08569102B2 Method of manufacturing high density CIS thin film for solar cell and method of manufacturing thin film solar cell using the same 有权
标题翻译：制造太阳能电池用高密度CIS薄膜的方法及使用其制造薄膜太阳能电池的方法
公开(公告)号：US08569102B2
公开(公告)日：2013-10-29
申请号：US13695627
申请日：2011-07-19
申请人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
发明人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
IPC分类号： H01L21/00 , C25D21/12 , C01B19/04
CPC分类号： H01L31/035209 , B82Y30/00 , C01B19/002 , C01G15/006 , C01P2004/03 , C01P2004/64 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.
摘要翻译：公开了一种高密度CIS薄膜及其制造方法，其包括通过非真空涂覆将CIS纳米粉末，CIGS纳米粉末或CZTS纳米粉末涂覆在基材上，随后在填充有填充元素的纳米粉末之间的空腔进行热处理如铜，铟，镓，锌，锡等。将高密度CIS薄膜施加到薄膜太阳能电池的光吸收层，从而提供高效率的薄膜太阳能电池。

2. 发明授权

US07660163B2 Method and unit for verifying initial state of non-volatile memory device 有权
标题翻译：用于验证非易失性存储器件的初始状态的方法和单元
公开(公告)号：US07660163B2
公开(公告)日：2010-02-09
申请号：US11208742
申请日：2005-08-23
申请人： Se-Jin Ahn
发明人： Se-Jin Ahn
IPC分类号： G11C16/06
CPC分类号： G11C16/34
摘要： A method of verifying an initial state of a non-volatile memory device, a command for verify an initial state of a unit and a unit address corresponding to the unit received from a memory controller. An initial state of memory cells, which correspond to the unit address, is verified in response to the command. A verification result of the unit is transmitted to the memory controller.
摘要翻译：一种验证非易失性存储器件的初始状态的方法，用于验证单元的初始状态的命令以及与从存储器控制器接收到的单元相对应的单元地址。对应于单元地址的存储单元的初始状态根据该命令被验证。该单元的验证结果被发送到存储器控制器。

3. 发明申请

US20080229090A1 Memory Card, Memory System Including the Same, and Operating Method thereof 有权
标题翻译：存储卡，包括其的存储器系统及其操作方法
公开(公告)号：US20080229090A1
公开(公告)日：2008-09-18
申请号：US12046888
申请日：2008-03-12
申请人： Sung-Up Choi , Se-Jin Ahn , Yong-Hyeon Kim
发明人： Sung-Up Choi , Se-Jin Ahn , Yong-Hyeon Kim
IPC分类号： G06F15/177 , G06F12/02
CPC分类号： G11C7/1045 , G06F9/4401 , G06F12/06 , G06F2212/2022
摘要： Provided is a memory card device. The memory card device includes a flash memory and a controller. The flash memory includes a boot area storing boot data, and a user area storing user data. The controller accesses the boot area or the user area according to an external command. Boot data can be stored in a memory card integrated in an electronic device. Also, when a host requests an access to boot data/user data stored in the memory card, the boot data/user data can be accessed under control of the controller.
摘要翻译：提供了一种存储卡装置。存储卡装置包括闪存和控制器。闪速存储器包括存储引导数据的引导区域和存储用户数据的用户区域。控制器根据外部命令访问引导区域或用户区域。引导数据可以存储在集成在电子设备中的存储卡中。此外，当主机请求访问存储在存储卡中的引导数据/用户数据时，可以在控制器的控制下访问引导数据/用户数据。

4. 发明申请

US20060044875A1 Method and unit for verifying initial state of non-volatile memory device 有权
标题翻译：用于验证非易失性存储器件的初始状态的方法和单元
公开(公告)号：US20060044875A1
公开(公告)日：2006-03-02
申请号：US11208742
申请日：2005-08-23
申请人： Se-Jin Ahn
发明人： Se-Jin Ahn
IPC分类号： G11C11/34
CPC分类号： G11C16/34
摘要： A method of verifying an initial state of a non-volatile memory device, a command for verify an initial state of a unit and a unit address corresponding to the unit received from a memory controller. An initial state of memory cells, which correspond to the unit address, is verified in response to the command. A verification result of the unit is transmitted to the memory controller.
摘要翻译：一种验证非易失性存储器件的初始状态的方法，用于验证单元的初始状态的命令以及与从存储器控制器接收到的单元相对应的单元地址。对应于单元地址的存储单元的初始状态根据该命令被验证。该单元的验证结果被发送到存储器控制器。

5. 发明申请

US20130045565A1 METHOD OF MANUFACTURING HIGH DENSITY CIS THIN FILM FOR SOLAR CELL AND METHOD OF MANUFACTURING THIN FILM SOLAR CELL USING THE SAME 有权
标题翻译：制造太阳能电池用高密度CIS薄膜的方法及其制造薄膜太阳能电池的方法
公开(公告)号：US20130045565A1
公开(公告)日：2013-02-21
申请号：US13695627
申请日：2011-07-19
申请人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
发明人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
IPC分类号： H01L31/18 , H01B1/02 , B82Y30/00
CPC分类号： H01L31/035209 , B82Y30/00 , C01B19/002 , C01G15/006 , C01P2004/03 , C01P2004/64 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.
摘要翻译：公开了一种高密度CIS薄膜及其制造方法，其包括通过非真空涂覆将CIS纳米粉末，CIGS纳米粉末或CZTS纳米粉末涂覆在基材上，随后在填充有填充元素的纳米粉末之间的空腔进行热处理如铜，铟，镓，锌，锡等。将高密度CIS薄膜施加到薄膜太阳能电池的光吸收层，从而提供高效率的薄膜太阳能电池。

6. 发明授权

US08370611B2 Memory card, memory system including the same, and operating method thereof 有权
标题翻译：存储卡，包括其的存储器系统及其操作方法
公开(公告)号：US08370611B2
公开(公告)日：2013-02-05
申请号：US12046888
申请日：2008-03-12
申请人： Sung-Up Choi , Se-Jin Ahn , Yong-Hyeon Kim
发明人： Sung-Up Choi , Se-Jin Ahn , Yong-Hyeon Kim
IPC分类号： G06F15/177 , G06F12/00 , G06F9/00 , G06F12/02
CPC分类号： G11C7/1045 , G06F9/4401 , G06F12/06 , G06F2212/2022
摘要： Provided is a memory card device. The memory card device includes a flash memory and a controller. The flash memory includes a boot area storing boot data, and a user area storing user data. The controller accesses the boot area or the user area according to an external command. Boot data can be stored in a memory card integrated in an electronic device. Also, when a host requests an access to boot data/user data stored in the memory card, the boot data/user data can be accessed under control of the controller.
摘要翻译：提供了一种存储卡装置。存储卡装置包括闪存和控制器。闪速存储器包括存储引导数据的引导区域和存储用户数据的用户区域。控制器根据外部命令访问引导区域或用户区域。引导数据可以存储在集成在电子设备中的存储卡中。此外，当主机请求访问存储在存储卡中的引导数据/用户数据时，可以在控制器的控制下访问引导数据/用户数据。

7. 发明授权

US08316278B2 Memory system that detects bit errors due to read disturbance and methods thereof 有权
标题翻译：用于检测由读取干扰引起的位错误的存储器系统及其方法
公开(公告)号：US08316278B2
公开(公告)日：2012-11-20
申请号：US12141611
申请日：2008-06-18
申请人： Se-Jin Ahn , Yong-Hyeon Kim , Sung-Up Choi , Yong-Kyeong Kim
发明人： Se-Jin Ahn , Yong-Hyeon Kim , Sung-Up Choi , Yong-Kyeong Kim
IPC分类号： G11C21/00
CPC分类号： G11C16/26 , G06F11/1068 , G11C16/0483 , G11C29/76
摘要： Methods and memory systems are provided that detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.
摘要翻译：提供了检测由读取干扰引起的位错误的方法和存储器系统。读取存储器系统中闪存的主页面。检测并纠正从主页读取的数据中的位错误。在读取主页的同时，在从闪存的虚拟页读取的数据中检测到位错误。

8. 发明申请

US20120005415A1 MEMORY SYSTEM SELECTING WRITE MODE OF DATA BLOCK AND DATA WRITE METHOD THEREOF 有权
标题翻译：存储器系统选择数据块的写入模式和数据写入方法
公开(公告)号：US20120005415A1
公开(公告)日：2012-01-05
申请号：US13172897
申请日：2011-06-30
申请人： Sung-Won Jung , Se-Jin Ahn , Tae-Min Lee
发明人： Sung-Won Jung , Se-Jin Ahn , Tae-Min Lee
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： A method of performing a write operation in a nonvolatile memory device comprises storing write data in a log block used to update a data block, determining whether a write pattern stored in the log block is a sequential write pattern or a random write pattern, and selecting a new data block for storing merged data in the data block and the log block. The new data block is determined to be a single-level cell block or a multi-level cell block according to the determined write pattern.
摘要翻译：在非易失性存储装置中执行写入操作的方法包括：将写入数据存储在用于更新数据块的日志块中，确定存储在日志块中的写入模式是顺序写入模式还是随机写入模式，以及选择用于存储数据块和日志块中的合并数据的新数据块。根据确定的写入模式，将新数据块确定为单级单元块或多级单元块。

9. 发明申请

US20080025095A1 FLASH MEMORY DEVICE AND PROGRAM METHOD THEREOF 审中-公开
标题翻译：闪存存储器件及其程序方法
公开(公告)号：US20080025095A1
公开(公告)日：2008-01-31
申请号：US11776109
申请日：2007-07-11
申请人： Se-Jin Ahn , Tae-Keun Jeon
发明人： Se-Jin Ahn , Tae-Keun Jeon
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/10
摘要： A flash memory device and method of programming a flash memory device which include an array of memory cells arranged in rows and columns. A method includes programming memory cells of a selected row with loaded data; determining whether the memory cells of the selected row are successfully programmed; when the judgment result is determined as a unsuccessful program operation, determining a reprogram operation according to flag information indicating an on/off state of the reprogram operation stored in the flash memory device; and when the flag information indicates an on state of the reprogram information, reprogramming the loaded data to memory cells of a different row from the selected row.
摘要翻译：一种闪速存储器件和一种编程闪存器件的方法，其包括以行和列布置的存储器单元阵列。一种方法包括用加载的数据来编程所选行的存储单元; 确定所选行的存储单元是否被成功地编程; 当判断结果被确定为不成功的程序操作时，根据表示存储在闪速存储器件中的重新编程操作的开/关状态的标志信息来确定重新编程操作; 并且当标志信息指示重新编程信息的接通状态时，将加载的数据重新编程到与所选择的行不同行的存储单元。

10. 发明申请

US20050029559A9 Semiconductor memory devices having offset transistors and methods of fabricating the same 失效
标题翻译：具有偏移晶体管的半导体存储器件及其制造方法
公开(公告)号：US20050029559A9
公开(公告)日：2005-02-10
申请号：US10696615
申请日：2003-10-28
申请人： Se-Jin Ahn , Se-Ho Lee
发明人： Se-Jin Ahn , Se-Ho Lee
IPC分类号： H01L29/72 , H01L21/28 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/80 , H01L31/112
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L29/42324
摘要： Semiconductor memory devices are provided that comprise unit memory cells. The unit memory cells include a first planar transistor in a semiconductor substrate, a vertical transistor disposed on the first planar transistor and a second planar transistor in series with the first planar transistor. The first planar transistor and the second planar transistor may have different threshold voltages. The semiconductor memory device may further include word lines. One of these word lines may form the gate of the second planar transistor a unit memory cell.
摘要翻译：提供了包括单元存储单元的半导体存储器件。单元存储单元包括半导体衬底中的第一平面晶体管，设置在第一平面晶体管上的垂直晶体管和与第一平面晶体管串联的第二平面晶体管。第一平面晶体管和第二平面晶体管可以具有不同的阈值电压。半导体存储器件还可以包括字线。这些字线之一可以形成第二平面晶体管的单元存储单元的栅极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式