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    • 4. 发明授权
    • Method of manufacturing a thin-film transistor substrate
    • 制造薄膜晶体管基板的方法
    • US07638373B2
    • 2009-12-29
    • US12015822
    • 2008-01-17
    • Seong-Kweon HeoChun-Gi You
    • Seong-Kweon HeoChun-Gi You
    • H01L21/00
    • H01L27/1288H01L27/1214H01L27/1255H01L29/66765
    • According to a method of manufacturing a thin-film transistor (TFT) substrate, a gate insulation layer, a semiconductor layer, an ohmic contact layer, and a data metal layer are sequentially formed on a substrate. A photoresist pattern is formed in a source electrode area and a drain electrode area. A data metal layer is etched using the photoresist pattern as an etch-stop layer to form a data wire including a source electrode and a drain electrode. A photoresist pattern is reflowed to cover a channel region between a source electrode and the drain electrode. An ohmic contact layer and the semiconductor layer are etched using the reflowed photoresist pattern as an etch-stop layer to form an active pattern including an ohmic contact pattern and a semiconductor pattern. The reflowed photoresist pattern is etched back to expose a portion of the ohmic contact pattern in the channel region. The ohmic contact pattern is etched using the etched-back photoresist pattern as an etch-stop layer.
    • 根据薄膜晶体管(TFT)基板的制造方法,在衬底上依次形成栅极绝缘层,半导体层,欧姆接触层和数据金属层。 在源电极区域和漏电极区域中形成光致抗蚀剂图案。 使用光致抗蚀剂图案作为蚀刻停止层蚀刻数据金属层,以形成包括源电极和漏电极的数据线。 光致抗蚀剂图案被回流以覆盖源电极和漏电极之间的沟道区域。 使用回流光致抗蚀剂图案作为蚀刻停止层来蚀刻欧姆接触层和半导体层,以形成包括欧姆接触图案和半导体图案的有源图案。 回流的光致抗蚀剂图案被回蚀以暴露通道区域中的欧姆接触图案的一部分。 使用蚀刻后的光致抗蚀剂图案作为蚀刻停止层来蚀刻欧姆接触图案。
    • 7. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE COMPRISING THE SAME
    • 薄膜晶体管衬底和包含其的液晶显示器件
    • US20080284932A1
    • 2008-11-20
    • US11832950
    • 2007-08-02
    • Seong-Kweon HeoChun-Gi You
    • Seong-Kweon HeoChun-Gi You
    • G02F1/136H01L21/28H01L29/08
    • G02F1/133555G02F1/1362
    • A thin film transistor including an insulating plate, a thin film transistor formed on the insulating plate, a first insulating layer formed on the insulating plate having the thin film transistor, a reflecting electrode formed on at least a portion of the first insulating layer, and a transparent electrode formed on at least a portion of the first insulating layer and on at least a portion of the reflecting electrode is disclosed. Up to about 85% of a total area of the transparent electrode overlaps with the reflecting electrode. About 10% to about 85% of the total area of the transparent electrode may overlap with the reflecting electrode. About 10% to about 20% of the total area of the transparent electrode may overlap with the reflecting electrode. About 40% to about 50% of the total area of the transparent electrode may overlap with the reflecting electrode. About 75% to about 85% of the total area of the transparent electrode may overlap with the reflecting electrode. Up to about 75% of a total area of the reflecting electrode overlaps with the transparent electrode. The first insulating layer includes an inorganic layer and an organic layer formed on the inorganic layer. At least a portion of the first insulating layer has an embossed surface.
    • 一种薄膜晶体管,包括绝缘板,形成在绝缘板上的薄膜晶体管,形成在具有薄膜晶体管的绝缘板上的第一绝缘层,形成在第一绝缘层的至少一部分上的反射电极,以及 公开了形成在第一绝缘层的至少一部分上以及反射电极的至少一部分上的透明电极。 高达约85%的透明电极的总面积与反射电极重叠。 透明电极的总面积的约10%〜约85%可能与反射电极重叠。 透明电极总面积的约10%至约20%可能与反射电极重叠。 透明电极的总面积的约40%至约50%可能与反射电极重叠。 透明电极的总面积的约75%至约85%可能与反射电极重叠。 高达约75%的反射电极的总面积与透明电极重叠。 第一绝缘层包括无机层和形成在无机层上的有机层。 第一绝缘层的至少一部分具有压花表面。
    • 8. 发明申请
    • METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE
    • 制造薄膜晶体管基板的方法
    • US20080113473A1
    • 2008-05-15
    • US12015822
    • 2008-01-17
    • Seong-Kweon HEOChun-Gi You
    • Seong-Kweon HEOChun-Gi You
    • H01L21/84
    • H01L27/1288H01L27/1214H01L27/1255H01L29/66765
    • According to a method of manufacturing a thin-film transistor (TFT) substrate, a gate insulation layer, a semiconductor layer, an ohmic contact layer, and a data metal layer are sequentially formed on a substrate. A photoresist pattern is formed in a source electrode area and a drain electrode area. A data metal layer is etched using the photoresist pattern as an etch-stop layer to form a data wire including a source electrode and a drain electrode. A photoresist pattern is reflowed to cover a channel region between a source electrode and the drain electrode. An ohmic contact layer and the semiconductor layer are etched using the reflowed photoresist pattern as an etch-stop layer to form an active pattern including an ohmic contact pattern and a semiconductor pattern. The reflowed photoresist pattern is etched back to expose a portion of the ohmic contact pattern in the channel region. The ohmic contact pattern is etched using the etched-back photoresist pattern as an etch-stop layer.
    • 根据薄膜晶体管(TFT)基板的制造方法,在衬底上依次形成栅极绝缘层,半导体层,欧姆接触层和数据金属层。 在源电极区域和漏电极区域中形成光致抗蚀剂图案。 使用光致抗蚀剂图案作为蚀刻停止层蚀刻数据金属层,以形成包括源电极和漏电极的数据线。 光致抗蚀剂图案被回流以覆盖源电极和漏电极之间的沟道区域。 使用回流光致抗蚀剂图案作为蚀刻停止层来蚀刻欧姆接触层和半导体层,以形成包括欧姆接触图案和半导体图案的有源图案。 回流的光致抗蚀剂图案被回蚀以暴露通道区域中的欧姆接触图案的一部分。 使用蚀刻后的光致抗蚀剂图案作为蚀刻停止层来蚀刻欧姆接触图案。