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1. 发明授权

US10530015B2 All-solid-state lithium secondary battery and method for producing the same 有权
公开(公告)号：US10530015B2
公开(公告)日：2020-01-07
申请号：US14127825
申请日：2012-06-20
申请人： Shingo Ohta , Mitsuru Asai , Takahiko Asaoka
发明人： Shingo Ohta , Mitsuru Asai , Takahiko Asaoka
IPC分类号： H01M10/0562 , H01M10/0585 , H01M10/04
摘要： An all-solid-state lithium secondary battery includes a positive electrode; a negative electrode; and a solid electrolyte arranged between the positive and negative electrodes, to conduct lithium ions. In the all-solid-state lithium secondary battery, a mixed layer is in close contact with a surface of the solid electrolyte adjacent to the positive electrode, the mixed layer containing the positive-electrode active material and (Lix(1−α), Mxα/β)γ+(B1−y, Ay)z+O2−δ (wherein in the formula, M and A each represent at least one or more elements selected from C, Al, Si, Ga, Ge, In, and Sn, α satisfies 0≤α

2. 发明授权

US08986895B2 Garnet-type lithium ion-conducting oxide and all-solid-state lithium ion secondary battery containing the same 有权
标题翻译：石榴石型锂离子传导性氧化物和含有其的全固态锂离子二次电池
公开(公告)号：US08986895B2
公开(公告)日：2015-03-24
申请号：US13132795
申请日：2010-02-02
申请人： Shingo Ohta , Tetsuro Kobayashi , Takahiko Asaoka , Mitsuru Asai
发明人： Shingo Ohta , Tetsuro Kobayashi , Takahiko Asaoka , Mitsuru Asai
IPC分类号： H01M6/18 , H01M10/0562 , C04B35/48 , C04B35/486 , C04B35/488 , C04B35/495 , C04B35/626 , H01M10/052
CPC分类号： H01M10/0562 , C04B35/481 , C04B35/486 , C04B35/4885 , C04B35/495 , C04B35/6262 , C04B35/62685 , C04B2235/3203 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3232 , C04B2235/3239 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3418 , C04B2235/761 , C04B2235/764 , C04B2235/77 , C04B2235/79 , C04B2235/81 , H01M10/052 , H01M2300/0071 , Y02E60/122
摘要： An all-solid-state lithium ion secondary battery containing a novel garnet-type oxide serving as a solid electrolyte. The garnet-type lithium ion-conducting oxide is one represented by the formula Li5+XLa3(ZrX, A2-X)O12, wherein A is at least one selected from the group consisting of Sc, Ti, V, Y, Nb, Hf, Ta, Al, Si, Ga, Ge, and Sn and X satisfies the inequality 1.4≦X
摘要翻译：包含新型石榴石型氧化物作为固体电解质的全固态锂离子二次电池。石榴石型锂离子传导氧化物是由式Li5 + XLa3（ZrX，A2-X）O12表示的锂离子传导氧化物，其中A为选自Sc，Ti，V，Y，Nb，Hf中的至少一种，Ta，Al，Si，Ga，Ge，Sn和X满足不等式1.4＆nlE; X <2，或者是通过将具有与Zr的离子半径不同的元素替代为石榴石型的Zr部位而获得的元素由式Li7La3Zr2O12表示的锂离子传导性氧化物，其中基于衍射峰的强度归一化的具有衍射峰的X射线衍射（XRD）图案的归一化强度为9.2以上。

3. 发明授权

US08610940B2 Displaying settings of a re-output condition for data 有权
标题翻译：显示数据重新输出条件的设置
公开(公告)号：US08610940B2
公开(公告)日：2013-12-17
申请号：US12723952
申请日：2010-03-15
申请人： Shingo Ohta
发明人： Shingo Ohta
IPC分类号： G06K15/00
CPC分类号： H04N1/00413 , H04N1/00474 , H04N1/00482 , H04N1/32128 , H04N2201/3216 , H04N2201/3222 , H04N2201/3242 , H04N2201/3273
摘要： An image processing apparatus includes an input control unit that receives the input of document data that is a target to be output and the output condition of the document data, an image output unit that outputs the document data in accordance with the received output condition, an HDD that stores therein the output condition under which the document data has been output, as a re-output condition to be set at a time when the document data is re-output, and a display control unit that displays the re-output condition on an operation display unit and, when a dependent item that is determined to be set together with a different item is present in the re-output condition, the display control unit displays a dependence-destination item that is the different item together with the re-output condition.
摘要翻译：图像处理装置包括输入控制单元，其接收作为要输出的目标的文档数据的输入和文档数据的输出条件;图像输出单元，其根据接收到的输出条件输出文档数据;图像输出单元，存储其中已经输出文档数据的输出条件的HDD作为在重新输出文档数据时被设置的重新输出条件;以及显示控制单元，其将再输出条件显示在操作显示单元，并且当在重新输出条件中存在被确定与不同项目一起设置的依赖项目时，显示控制单元显示作为不同项目的依赖关系项目，输出条件。

4. 发明授权

US08441017B2 Schottky barrier diode and method for making the same 有权
公开(公告)号：US08441017B2
公开(公告)日：2013-05-14
申请号：US13150635
申请日：2011-06-01
申请人： Shingo Ohta , Tatsuya Kiriyama , Takashi Nakamura , Yuji Okamura
发明人： Shingo Ohta , Tatsuya Kiriyama , Takashi Nakamura , Yuji Okamura
IPC分类号： H01L29/24
CPC分类号： H01L21/28008 , H01L29/0619 , H01L29/66143 , H01L29/872
摘要： A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

5. 发明授权

US09146527B2 Apparatus cooperation system, image forming apparatus, and function providing method 有权
标题翻译：仪器配合系统，成像设备及功能提供方法
公开(公告)号：US09146527B2
公开(公告)日：2015-09-29
申请号：US13605394
申请日：2012-09-06
申请人： Shingo Ohta
发明人： Shingo Ohta
IPC分类号： G06F15/00 , G03G21/02 , G06F3/12
CPC分类号： G03G21/02 , G03G2215/00109 , G03G2215/00113 , G06F3/1205 , G06F3/1239 , G06F3/1291 , Y02D10/1592
摘要： An apparatus cooperation system including first and second apparatuses connected via a network to share a function, the first apparatus including a first counting unit counting a number of the output objects output by the first output unit based on a first counting rule, the second apparatus including a second counting unit counting a number of the output objects output by the second output unit based on a second counting rule. Further, when an output condition to output the image data by the first apparatus and the second apparatus is accepted, the first counting unit counts a total number of the output objects output by the first output unit and the second output unit based on the first counting rule.
摘要翻译：一种设备协作系统，包括经由网络连接以共享功能的第一和第二设备，所述第一设备包括：第一计数单元，其基于第一计数规则对由所述第一输出单元输出的输出对象的数量进行计数，所述第二设备包括第二计数单元，基于第二计数规则对由第二输出单元输出的输出对象的数量进行计数。此外，当接收到由第一装置和第二装置输出图像数据的输出条件时，第一计数单元基于第一计数对由第一输出单元和第二输出单元输出的输出对象的总数进行计数规则。

6. 发明申请

US20140162113A1 ALL-SOLID-STATE LITHIUM SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：全固态锂二次电池及其制造方法
公开(公告)号：US20140162113A1
公开(公告)日：2014-06-12
申请号：US14127825
申请日：2012-06-20
申请人： Shingo Ohta , Mitsuru Asai , Takahiko Asaoka
发明人： Shingo Ohta , Mitsuru Asai , Takahiko Asaoka
IPC分类号： H01M10/0585 , H01M10/04
CPC分类号： H01M10/0585 , H01B1/08 , H01M4/0471 , H01M4/131 , H01M4/1391 , H01M10/04 , H01M10/0525 , H01M10/0562 , H01M2300/0071
摘要： An all-solid-state lithium secondary battery includes a positive electrode; a negative electrode; and a solid electrolyte arranged between the positive and negative electrodes, to conduct lithium ions. In the all-solid-state lithium secondary battery, a mixed layer is in close contact with a surface of the solid electrolyte adjacent to the positive electrode, the mixed layer containing the positive-electrode active material and (Lix(1−α), Mxα/β)γ+(B1−y, Ay)z+O2−δ (wherein in the formula, M and A each represent at least one or more elements selected from C, Al, Si, Ga, Ge, In, and Sn, α satisfies 0≦α
摘要翻译：全固态锂二次电池包括正电极; 负极; 以及设置在正极和负极之间的固体电解质，以进行锂离子。在全固态锂二次电池中，混合层与正极相邻的固体电解质的表面紧密接触，含有正极活性物质的混合层和（Lix（1-α），（式中，M和A各自表示选自C，Al，Si，Ga，Ge，In中的至少一种以上的元素，并且Sn，α满足0＆nlE;α<1，＆bgr;表示M的化合价，γ表示（Li + x（1-α），Mα）的平均化合价，y满足0＆nlE; y <1，z表示平均（B1-y，Ay）和x，α，＆bgr，γ，z和γ的化合价满足用作矩阵的关系式（x（1-α）+xα/＆bgr;）γ+ z =2δ）。

7. 发明申请

US20120183887A1 ORIENTED AMORPHOUS CARBON FILM AND PROCESS FOR FORMING THE SAME 有权
标题翻译：面向非晶形碳膜及其形成方法
公开(公告)号：US20120183887A1
公开(公告)日：2012-07-19
申请号：US13497475
申请日：2010-12-24
申请人： Takashi Iseki , Yuka Yamada , Kazuyuki Nakanishi , Yasuhiro Ozawa , Shingo Ohta
发明人： Takashi Iseki , Yuka Yamada , Kazuyuki Nakanishi , Yasuhiro Ozawa , Shingo Ohta
IPC分类号： H01M8/02 , H01B1/04 , H01M4/66 , C23C16/26
CPC分类号： C01B31/02 , B82Y30/00 , B82Y40/00 , C01B32/05 , C01B32/182 , C23C16/26 , C23C16/503 , H01M4/625 , H01M4/663 , H01M4/96 , H01M8/0202
摘要： The oriented amorphous carbon film contains C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sp2 hybrid orbital (Csp2) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction. This film has a novel structure and exhibits a high electric conductivity. This film can be formed by DC plasma CVD method in which an electric discharge is generated by applying a voltage of not less than 1500 V to reaction gas including at least one kind of compound gas selected from gas of a carbocyclic compound containing Csp2 and gas of an N-containing heterocyclic compound containing Csp2, and nitrogen and/or silicon, and nitrogen gas.
摘要翻译：取向非晶碳膜含有C为主要成分，3〜20at。 N的百分比，超过0。％，不超过20。 H的百分比，当C的总量取为100时。％，具有sp2混合轨道（Csp2）的C的量不小于70at。％和小于100。％和（002）面的石墨沿厚度方向取向。该膜具有新颖的结构并具有高电导率。该膜可以通过DC等离子体CVD法形成，其中通过施加不低于1500V的电压而产生放电，包括至少一种选自含有Csp2的碳环化合物的气体和含有Csp2的含氮杂环化合物，氮和/或硅，以及氮气。

8. 发明授权

US08223381B2 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US08223381B2
公开(公告)日：2012-07-17
申请号：US11826954
申请日：2007-07-19
申请人： Shingo Ohta
发明人： Shingo Ohta
IPC分类号： G06K15/00 , G06K1/00 , G06K9/46 , G06K9/36 , G06F15/00 , G06F3/12
CPC分类号： G06F21/83 , G06F2221/2143
摘要： An electronic device includes a storage unit that stores therein input data, and a deleting unit that partially deletes the input data when the input data becomes unnecessary. The deleting unit deletes portions of the input data, each having a predetermined size, with predetermined or random spacing between the portions in row and column directions, or deletes only an effective portion of the input data.
摘要翻译：电子设备包括存储单元，其中存储输入数据;以及删除单元，当输入数据变得不必要时，部分删除输入数据。删除单元以行和列方向的部分之间的预定或随机间隔删除每个具有预定大小的输入数据的部分，或者仅删除输入数据的有效部分。

9. 发明申请

US20120062942A1 IMAGE PROCESSING APPARATUS AND IMAGE PROCESSING SYSTEM 有权
标题翻译：图像处理设备和图像处理系统
公开(公告)号：US20120062942A1
公开(公告)日：2012-03-15
申请号：US13210887
申请日：2011-08-16
申请人： Shingo Ohta
发明人： Shingo Ohta
IPC分类号： G06F3/12
CPC分类号： G06F3/1288 , G06F3/1206 , G06F3/1226 , G06F3/123 , G06F3/1247 , G06F3/1291 , H04N1/00244 , H04N1/00938 , H04N1/00973 , H04N1/32502 , H04N2201/0087 , H04N2201/0094
摘要： An image processing apparatus is connected to other image processing apparatuses and a file server via a network and includes a document obtaining unit configured to obtain document data and attribute information including format information and generator apparatus information of the document data from the file server, a processability determining unit configured to determine whether the obtained document data are processable by the image processing apparatus based on the format information, an apparatus identifying unit configured to identify one of the other image processing apparatuses as a generator apparatus that has generated the document data based on the generator apparatus information if the processability determining unit determines that the obtained document data are not processable by the image processing apparatus, and a function obtaining unit configured to obtain a functional program for processing the document data from the generator apparatus.
摘要翻译：一种图像处理装置经由网络连接到其他图像处理装置和文件服务器，并且包括文件获取单元，其被配置为从文件服务器获得文档数据和包括文档数据的格式信息和生成装置信息的属性信息，可处理性确定单元，被配置为基于格式信息来确定所获得的文档数据是否可由图像处理装置处理;装置识别单元，被配置为将其他图像处理装置中的一个识别为基于所述文档数据生成了文档数据的生成装置如果可处理性确定单元确定所获得的文档数据不能被图像处理装置处理，则功能获取单元被配置为获得用于处理来自发生器装置的文档数据的功能程序。

10. 发明申请

US20110250736A1 SCHOTTKY BARRIER DIODE AND METHOD FOR MAKING THE SAME 有权
标题翻译：肖特彼勒二极管及其制造方法
公开(公告)号：US20110250736A1
公开(公告)日：2011-10-13
申请号：US13150635
申请日：2011-06-01
申请人： Shingo OHTA , Tatsuya KIRIYAMA , Takashi NAKAMURA , Yuji OKAMURA
发明人： Shingo OHTA , Tatsuya KIRIYAMA , Takashi NAKAMURA , Yuji OKAMURA
IPC分类号： H01L21/20
CPC分类号： H01L21/28008 , H01L29/0619 , H01L29/66143 , H01L29/872
摘要： A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.
摘要翻译：肖特基二极管包括具有第一表面和背离第一表面的第二表面的SiC衬底，形成在SiC衬底的第一表面上的半导体层，与半导体层接触的肖特基电极，以及与SiC衬底的第二表面接触的欧姆电极。 SiC衬底的第一表面是（000-1）C表面，形成半导体层。

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